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1. 发明申请

US20050277280A1 Semiconductor device with a high thermal dissipation efficiency 有权
标题翻译：具有高散热效率的半导体器件
公开(公告)号：US20050277280A1
公开(公告)日：2005-12-15
申请号：US11148737
申请日：2005-06-09
申请人： Thomas Brunschwiler , Michel Despont , Mark Lantz , Bruno Michel , Peter Vettiger
发明人： Thomas Brunschwiler , Michel Despont , Mark Lantz , Bruno Michel , Peter Vettiger
IPC分类号： H01L21/44 , H01L21/48 , H01L23/367
CPC分类号： H01L21/4882 , H01L21/4871 , H01L21/4875 , H01L23/3677 , H01L2224/16 , H01L2224/73253 , H01L2924/09701 , H01L2924/1461 , H01L2924/00
摘要： Provides semiconductor devices and method for fabricating devices having a high thermal dissipation efficiency. An example device comprises a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.
摘要翻译：提供用于制造具有高散热效率的器件的半导体器件和方法。示例性装置包括通过焊接附接到半导体器件的表面的导热结构。导热结构基本上由导热材料形成，并且包括独立的翅片，螺柱或框架的阵列或连接的翅片的格栅。制造这种半导体器件的方法包括在载体上形成导热结构，并通过焊接将形成在载体上的导热结构附着在半导体器件的表面上。

2. 发明申请

US20080017978A1 Semiconductor Device With A High Thermal Dissipation Efficiency 有权
标题翻译：具有高散热效率的半导体器件
公开(公告)号：US20080017978A1
公开(公告)日：2008-01-24
申请号：US11852317
申请日：2007-09-09
申请人： Thomas Brunschwiler , Michel Despont , Mark Lantz , Bruno Michel , Peter Vettiger
发明人： Thomas Brunschwiler , Michel Despont , Mark Lantz , Bruno Michel , Peter Vettiger
IPC分类号： H01L23/34
CPC分类号： H01L21/4882 , H01L21/4871 , H01L21/4875 , H01L23/3677 , H01L2224/16 , H01L2224/73253 , H01L2924/09701 , H01L2924/1461 , H01L2924/00
摘要： A semiconductor device having a higher thermal dissipation efficiency comprises a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.
摘要翻译：具有更高散热效率的半导体器件包括通过焊接附接到半导体器件的表面的导热结构。导热结构基本上由导热材料形成，并且包括独立的翅片，螺柱或框架的阵列或连接的翅片的格栅。制造这种半导体器件的方法包括在载体上形成导热结构，并通过焊接将形成在载体上的导热结构附着在半导体器件的表面上。

3. 发明授权

US07713789B2 Semiconductor device with a high thermal dissipation efficiency 有权
标题翻译：具有高散热效率的半导体器件
公开(公告)号：US07713789B2
公开(公告)日：2010-05-11
申请号：US11852317
申请日：2007-09-09
申请人： Thomas J. Brunschwiler , Michel Despont , Mark A. Lantz , Bruno Michel , Peter Vettiger
发明人： Thomas J. Brunschwiler , Michel Despont , Mark A. Lantz , Bruno Michel , Peter Vettiger
IPC分类号： H01L21/00
CPC分类号： H01L21/4882 , H01L21/4871 , H01L21/4875 , H01L23/3677 , H01L2224/16 , H01L2224/73253 , H01L2924/09701 , H01L2924/1461 , H01L2924/00
摘要： Provides semiconductor devices and method for fabricating devices having a high thermal dissipation efficiency. An example device comprises a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.
摘要翻译：提供用于制造具有高散热效率的器件的半导体器件和方法。示例性装置包括通过焊接附接到半导体器件的表面的导热结构。导热结构基本上由导热材料形成，并且包括独立的翅片，螺柱或框架的阵列或连接的翅片的格栅。制造这种半导体器件的方法包括在载体上形成导热结构，并通过焊接将形成在载体上的导热结构附着在半导体器件的表面上。

4. 发明授权

US07928565B2 Semiconductor device with a high thermal dissipation efficiency 有权
标题翻译：具有高散热效率的半导体器件
公开(公告)号：US07928565B2
公开(公告)日：2011-04-19
申请号：US12709674
申请日：2010-02-22
申请人： Thomas J. Brunschwiler , Michel Despont , Mark A. Lantz , Bruno Michel , Peter Vettiger
发明人： Thomas J. Brunschwiler , Michel Despont , Mark A. Lantz , Bruno Michel , Peter Vettiger
IPC分类号： H01L23/34
CPC分类号： H01L21/4882 , H01L21/4871 , H01L21/4875 , H01L23/3677 , H01L2224/16 , H01L2224/73253 , H01L2924/09701 , H01L2924/1461 , H01L2924/00
摘要： A semiconductor device having a higher thermal dissipation efficiency includes a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.
摘要翻译：具有较高散热效率的半导体器件包括通过焊接附接到半导体器件的表面的导热结构。导热结构基本上由导热材料形成，并且包括独立的翅片，螺柱或框架的阵列或连接的翅片的格栅。制造这种半导体器件的方法包括在载体上形成导热结构，并通过焊接将形成在载体上的导热结构附着在半导体器件的表面上。

5. 发明授权

US07271034B2 Semiconductor device with a high thermal dissipation efficiency 有权
标题翻译：具有高散热效率的半导体器件
公开(公告)号：US07271034B2
公开(公告)日：2007-09-18
申请号：US11148737
申请日：2005-06-09
申请人： Thomas J. Brunschwiler , Michel Despont , Mark A. Lantz , Bruno Michel , Peter Vettiger
发明人： Thomas J. Brunschwiler , Michel Despont , Mark A. Lantz , Bruno Michel , Peter Vettiger
IPC分类号： H01L21/00
CPC分类号： H01L21/4882 , H01L21/4871 , H01L21/4875 , H01L23/3677 , H01L2224/16 , H01L2224/73253 , H01L2924/09701 , H01L2924/1461 , H01L2924/00
摘要： Provides semiconductor devices and method for fabricating devices having a high thermal dissipation efficiency. An example device comprises a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.
摘要翻译：提供用于制造具有高散热效率的器件的半导体器件和方法。示例性装置包括通过焊接附接到半导体器件的表面的导热结构。导热结构基本上由导热材料形成，并且包括独立的翅片，螺柱或框架的阵列或连接的翅片的格栅。制造这种半导体器件的方法包括在载体上形成导热结构，并通过焊接将形成在载体上的导热结构附着在半导体器件的表面上。

6. 发明申请

US20100148358A1 SEMICONDUCTOR DEVICE WITH A HIGH THERMAL DISSIPATION EFFICIENCY 有权
标题翻译：具有高热释放效率的半导体器件
公开(公告)号：US20100148358A1
公开(公告)日：2010-06-17
申请号：US12709674
申请日：2010-02-22
申请人： Thomas J. Brunschwiler , Michel Despont , Mark A. Lantz , Bruno Michel , Peter Vettiger
发明人： Thomas J. Brunschwiler , Michel Despont , Mark A. Lantz , Bruno Michel , Peter Vettiger
IPC分类号： H01L23/473 , H01L23/36
CPC分类号： H01L21/4882 , H01L21/4871 , H01L21/4875 , H01L23/3677 , H01L2224/16 , H01L2224/73253 , H01L2924/09701 , H01L2924/1461 , H01L2924/00
摘要： A semiconductor device having a higher thermal dissipation efficiency includes a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.
摘要翻译：具有较高散热效率的半导体器件包括通过焊接附接到半导体器件的表面的导热结构。导热结构基本上由导热材料形成，并且包括独立的翅片，螺柱或框架的阵列或连接的翅片的格栅。制造这种半导体器件的方法包括在载体上形成导热结构，并通过焊接将形成在载体上的导热结构附着在半导体器件的表面上。

7. 发明授权

US06218086B1 Method of forming ultrasmall structures and apparatus therefor 有权
标题翻译：形成超小型结构的方法及其设备
公开(公告)号：US06218086B1
公开(公告)日：2001-04-17
申请号：US09147865
申请日：1999-03-17
申请人： Gerd K. Binnig , Michel Despont , Walter Haeberle , Peter Vettiger
发明人： Gerd K. Binnig , Michel Despont , Walter Haeberle , Peter Vettiger
IPC分类号： G03F700
CPC分类号： G03F7/0002 , G01Q70/10 , G01Q80/00 , G11B9/14 , G11B11/007 , Y10S977/856 , Y10S977/878
摘要： The present invention discloses a method of forming ultrasmall (nano) structures in a thin film provided on a substrate by means of a tip which is movable relative to the surface of the thin film. According to principles of the invention, the penetration depth of the tip is limited, thereby avoiding wear of the tip. Furthermore, an apparatus for carrying out the method is disclosed.
摘要翻译：本发明公开了一种通过能够相对于薄膜表面移动的尖端在基片上形成超薄（nano）结构的方法。根据本发明的原理，尖端的穿透深度受到限制，从而避免了尖端的磨损。此外，公开了一种用于执行该方法的装置。

8. 发明授权

US07409488B2 Data processing system 失效
标题翻译：数据处理系统
公开(公告)号：US07409488B2
公开(公告)日：2008-08-05
申请号：US10623916
申请日：2003-07-21
申请人： Gerd K. Binnig , Michel Despont , Urs T. Durig , Walter Haberle , Peter Vettiger
发明人： Gerd K. Binnig , Michel Despont , Urs T. Durig , Walter Haberle , Peter Vettiger
IPC分类号： G06F12/00
CPC分类号： B82Y10/00 , G11B9/1436 , G11C23/00
摘要： A data processing system comprises a local probe storage array having a plurality of sensors for reading data from a storage surface. A plurality of data processing elements are mounted on the storage array. Each data processing element is connected to different sensor of the array for processing data read by the connected sensor. The data processing elements may be logic gates for performing simple comparisons with input data. Alternatively, each data processing element may comprise more complex logic circuitry for performing more complex functions based on data read by the storage array. Such function may involve a combination of data read by the storage array and data input to the data processing system from an another source. Each data processing element may comprise a complete microprocessor system responsive to data read from the storage array. It will be appreciated that data processing elements may thought of as collectively constituting a form of CPU capable of acting upon data read from the storage array in a parallel and therefor high speed fashion.
摘要翻译：数据处理系统包括具有用于从存储表面读取数据的多个传感器的本地探针存储阵列。多个数据处理元件安装在存储阵列上。每个数据处理元件连接到阵列的不同传感器，用于处理由连接的传感器读取的数据。数据处理元件可以是用于执行与输入数据的简单比较的逻辑门。或者，每个数据处理元件可以包括更复杂的逻辑电路，用于基于由存储阵列读取的数据来执行更复杂的功能。这样的功能可以涉及由存储阵列读取的数据和从另一个源输入到数据处理系统的数据的组合。每个数据处理元件可以包括响应于从存储阵列读取的数据的完整的微处理器系统。应当理解，数据处理元件可以被认为是共同构成一种能够以并行的方式从存储阵列读取数据的CPU的形式。

9. 发明授权

US07351604B2 Microstructures 有权
标题翻译：微结构
公开(公告)号：US07351604B2
公开(公告)日：2008-04-01
申请号：US10501516
申请日：2002-11-21
申请人： Graham Cross , Michel Despont , Urs T. Duerig , Grégoire Genolet , Reto Schlittler , Peter Vettiger
发明人： Graham Cross , Michel Despont , Urs T. Duerig , Grégoire Genolet , Reto Schlittler , Peter Vettiger
IPC分类号： H01L21/00
CPC分类号： G11C23/00 , G01Q70/06 , G01Q70/12 , G01Q70/16 , G11B9/1409 , G11B9/1418 , G11C13/025 , G11C2213/81 , Y10S977/732 , Y10S977/733
摘要： A method for forming a microstructures is described. The method comprises: depositing a seed material on a substrate; growing a nanotube from the seed material; depositing microstructure material on the substrate to embed the nanotube in the microstructure material; and, detaching the substrate to release the microstructure. The resulting mictostructure comprises a body portion and a nanotube embedded in the body portion.
摘要翻译：描述了形成微结构的方法。该方法包括：将种子材料沉积在基底上; 从种子材料生长纳米管; 将微结构材料沉积在衬底上以将纳米管嵌入微结构材料中; 并且分离基板以释放微结构。所得到的微结构包括主体部分和嵌入在主体部分中的纳米管。

10. 发明授权

US07054257B2 AFM-based data storage and microscopy 有权
标题翻译：基于AFM的数据存储和显微镜
公开(公告)号：US07054257B2
公开(公告)日：2006-05-30
申请号：US10426064
申请日：2003-04-29
申请人： Gerd K. Binnig , Michel Despont , Peter Vettiger
发明人： Gerd K. Binnig , Michel Despont , Peter Vettiger
IPC分类号： G11B7/00 , H01J37/00
CPC分类号： G11B9/14 , G01Q80/00 , G11B9/1409 , G11B2005/0021
摘要： Read/write components for AFM-based data storage devices are provided. In particular embodiments, a read/write component comprises lever means and a support structure, the lever means being connected to the support structure for substantially pivotal movement. The lever means provides first and second current paths between a pair of electrical supply lines on the support structure via which the lever means can be connected in use to power supply means operable in a write mode and a read mode. A write-mode heater is provided on the lever means in the first current path, and a read/write tip is provided on the write-mode heater. A read-mode heater is provided on the lever means in the second current path. Decoupling means is arranged to inhibit current flow to the write-mode heater via the first current path in use when the power supply means is operated in the read mode. The component, with separate write and read-mode heaters, can thus be addressed in both the write and read modes via a single pair of supply lines. Other embodiments provide read/write components employing a thermal decoupling mechanism, and read/write components where read-sensing is performed by a proximity sensing arrangement between the lever means and the support structure. Sensing apparatus for atomic force microscopes is also provided where tip movement can be detected via similar proximity sensing arrangements.
摘要翻译：提供了基于AFM的数据存储设备的读/写组件。在特定实施例中，读/写组件包括杠杆装置和支撑结构，杠杆装置连接到支撑结构以实质上枢转运动。杠杆装置在支撑结构上的一对电源线之间提供第一和第二电流路径，通过该第一和第二电流路径，杠杆装置可以在使用中连接到以写入模式和读取模式操作的电源装置。写模式加热器设置在第一电流路径中的杠杆装置上，并且在写模式加热器上设置读/写尖端。在第二电流路径中的杠杆装置上设置读取模式加热器。去耦装置被布置成当电源装置在读取模式下操作时，通过使用中的第一电流路径阻止电流流向写模式加热器。因此，具有单独的写入和读取模式加热器的组件可以通过一对电源线在写入和读取模式下进行寻址。其他实施例提供采用热解耦机构的读/写组件，以及读/写组件，其中通过杠杆装置和支撑结构之间的接近感测装置执行读取感测。还提供了用于原子力显微镜的感测装置，其中可以通过类似的接近感测装置检测尖端运动。

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