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1. 发明申请

WO2009012324A1 EFFICIENT SOLAR CELLS USING ALL-ORGANIC NANOCRYSTALLINE NETWORKS 审中-公开
标题翻译：使用全有机纳米网络的高效太阳能电池
公开(公告)号：WO2009012324A1
公开(公告)日：2009-01-22
申请号：PCT/US2008/070208
申请日：2008-07-16
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN , THE TRUSTEES OF PRINCETON UNIVERSITY , SUN, Kai , YANG, Fan , FORREST, Stephen, R.
发明人： SUN, Kai , YANG, Fan , FORREST, Stephen, R.
IPC分类号： H01L51/42
CPC分类号： H01L51/4246 , B82Y10/00 , H01L27/302 , H01L51/0008 , H01L51/0046 , H01L51/0078 , H01L51/4253 , Y02E10/549
摘要： An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer; depositing a layer of a second organic semiconductor material on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; and depositing the first organic semiconductor material on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed. The depositing of the first and second organic semiconductor materials are alternated a number of times until a final layer of the second organic material is added to form a continuous layer. A second electrode is deposited over this final layer. One of the first electrode and the second electrode is transparent, and the first organic semiconductor material is one or more donor-type materials or one or more acceptor-type materials relative to second organic semiconductor material, which is one or more materials of the other material type.
摘要翻译：光电子器件和制造光敏光电子器件的方法包括在第一电极上沉积第一有机半导体材料以形成连续的第一层; 在第一层上沉积第二有机半导体材料层以形成不连续的第二层，第一层的部分保持暴露; 以及将所述第一有机半导体材料沉积在所述第二层上以形成不连续的第三层，至少所述第二层的部分保持暴露。第一和第二有机半导体材料的沉积多次交替，直到添加第二有机材料的最终层以形成连续层。在该最终层上沉积第二电极。第一电极和第二电极中的一个是透明的，并且第一有机半导体材料是相对于第二有机半导体材料的一种或多种施主型材料或一种或多种受主型材料，其是另一种或多种材料材料类型

2. 发明申请

WO2008008477A2 ARCHITECTURES AND CRITERIA FOR THE DESIGN OF HIGH EFFICIENCY ORGANIC PHOTOVOLTAIC CELLS 审中-公开
标题翻译：高效有机光伏电池设计的结构与标准
公开(公告)号：WO2008008477A2
公开(公告)日：2008-01-17
申请号：PCT/US2007/015967
申请日：2007-07-11
申请人： THE TRUSTEES OF PRINCETON UNIVERSITY , THE REGENTS OF THE UNIVERSITY OF MICHIGAN , RAND, Barry , FORREST, Stephen, R. , BURK, Diana, Pendergrast
发明人： RAND, Barry , FORREST, Stephen, R. , BURK, Diana, Pendergrast
IPC分类号： H01L51/42 , H01L27/30
CPC分类号： H01L51/4246 , B82Y10/00 , H01L27/302 , H01L51/0046 , H01L51/0071 , H01L51/0072 , H01L51/0078 , H01L51/4253 , Y02E10/549
摘要： An organic photovoltaic cell includes an anode and a cathode, and a plurality of organic semiconductor layers between the anode and the cathode. At least one of the anode and the cathode is transparent. Each two adjacent layers of the plurality of organic semiconductor layers are in direct contact. The plurality of organic semiconductor layers includes an intermediate layer consisting essentially of a photoconductive material, and two sets of at least three layers. A first set of at least three layers is between the intermediate layer and the anode. Each layer of the first set consists essentially of a different organic semiconductor material having a higher LUMO and a higher HOMO, relative to the material of an adjacent layer of the plurality of organic semiconductor layers closer to the cathode. A second set of at least three layers is between the intermediate layer and the cathode. Each layer of the second set consists essentially of a different organic semiconductor material having a lower LUMO and a lower HOMO, relative to the material of an adjacent layer of the plurality of organic semiconductor layers closer to the anode.
摘要翻译：有机光伏电池包括阳极和阴极以及在阳极和阴极之间的多个有机半导体层。阳极和阴极中的至少一个是透明的。多个有机半导体层中的每两个相邻层直接接触。多个有机半导体层包括基本上由光电导材料构成的中间层和两组至少三层。第一组至少三层位于中间层和阳极之间。相对于更靠近阴极的多个有机半导体层的相邻层的材料，第一组的每一层基本上由具有更高LUMO和更高HOMO的不同有机半导体材料组成。第二组至少三层位于中间层和阴极之间。相对于更靠近阳极的多个有机半导体层的相邻层的材料，第二组的各层基本上由具有较低LUMO和较低HOMO的不同有机半导体材料组成。

3. 发明申请

WO2009049087A2 TYPE II QUANTUM DOT SOLAR CELLS 审中-公开
标题翻译：第二类量子太阳能电池
公开(公告)号：WO2009049087A2
公开(公告)日：2009-04-16
申请号：PCT/US2008/079412
申请日：2008-10-09
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN , THE TRUSTEES OF PRINCETON UNIVERSITY , FORREST, Stephen, R. , WEI, Guadan , SHIU, Kuen-ting
发明人： FORREST, Stephen, R. , WEI, Guadan , SHIU, Kuen-ting
IPC分类号： H01L31/0264 , H01L21/04
CPC分类号： B82Y30/00 , H01L31/03046 , H01L31/035281 , H01L31/0735 , Y02E10/544 , Y10S977/932 , Y10S977/948
摘要： A device comprises a plurality of fence layers of a semiconductor material and a plurality of alternating layers of quantum dots of a second semiconductor material embedded between and in direct contact with a third semiconductor material disposed in a stack between a p-type and n-type semiconductor material. Each quantum dot of the second semiconductor material and the third semiconductor material form a heterojunction having a type Il band alignment. A method for fabricating such a device is also provided.
摘要翻译：一种器件包括半导体材料的多个栅栏层和第二半导体材料的量子点的多个交替层，该第二半导体材料的第二半导体材料的交替层被嵌入在与p型和n型之间的堆叠中的第三半导体材料之间并直接接触半导体材料。第二半导体材料的每个量子点和第三半导体材料形成具有II型带对准的异质结。还提供了一种用于制造这种装置的方法。

4. 发明申请

WO2008147392A3 INTERMEDIATE-BAND PHOTOSENSITIVE DEVICE WITH QUANTUM DOTS EMBEDDED IN ENERGY FENCE BARRIER 审中-公开
公开(公告)号：WO2008147392A3
公开(公告)日：2008-12-04
申请号：PCT/US2007/023447
申请日：2007-11-06
申请人： THE TRUSTEES OF PRINCETON UNIVERSITY , THE REGENTS OF THE UNIVERSITY OF MICHIGAN , FORREST, Stephen, R. , WEI, Guodan
发明人： FORREST, Stephen, R. , WEI, Guodan
IPC分类号： H01L31/0352 , H01L31/09 , H01L31/18
摘要： A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a- fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

5. 发明申请

WO2008097258A2 CONTROLLED GROWTH OF LARGER HETEROJUNCTION INTERFACE AREA FOR ORGANIC PHOTOSENSITIVE DEVICES 审中-公开
标题翻译：用于有机感光装置的大型异步接口界面的控制生长
公开(公告)号：WO2008097258A2
公开(公告)日：2008-08-14
申请号：PCT/US2007/015809
申请日：2007-07-10
申请人： THE TRUSTEES OF PRINCETON UNIVERSITY , THE REGENTS OF THE UNIVERSITY OF MICHIGAN , YANG, Fan , FORREST, Stephen, R.
发明人： YANG, Fan , FORREST, Stephen, R.
IPC分类号： H01L51/42
CPC分类号： H01L51/4246 , H01L51/0008 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.
摘要翻译：光电子器件和制造光敏光电子器件的方法包括在第一电极上沉积第一有机半导体材料以形成具有突起的连续的第一层，与第一电极相对的第一层的一侧的表面积至少为三倍大于下面的横截面积; 将第二有机半导体材料直接沉积在第一层上以形成不连续的第二层，第一层的部分保持暴露; 将第三有机半导体材料直接沉积在第二层上以形成不连续的第三层，至少第二层的部分保持暴露; 在第三层上沉积第四有机半导体材料以形成连续的第四层，填充第一层，第二层和第三层中任何露出的间隙和凹陷; 以及在所述第四层上沉积第二电极，其中所述第一电极和所述第二电极中的至少一个是透明的，并且所述第一和第三有机半导体材料相对于第二和第四电极都是供体型或受体型有机半导体材料，其它材料类型。

6. 发明申请

WO2008066910A1 ORGANIC PHOTOVOLTAIC CELLS UTILIZING ULTRATHIN SENSITIZING LAYER 审中-公开
标题翻译：有机光伏电池利用超声致敏层
公开(公告)号：WO2008066910A1
公开(公告)日：2008-06-05
申请号：PCT/US2007/024651
申请日：2007-11-29
申请人： THE TRUSTEES OF PRINCETON UNIVERSITY , THE REGENTS OF THE UNIVERSITY OF MICHIGAN , FORREST, Stephen, R. , YANG, Fan , RAND, Barry, P.
发明人： FORREST, Stephen, R. , YANG, Fan , RAND, Barry, P.
IPC分类号： H01L51/42
CPC分类号： H01L51/4246 , B82Y10/00 , H01L27/302 , H01L51/0046 , H01L51/0071 , H01L51/0072 , H01L51/0078 , H01L51/4253 , Y02E10/549
摘要： A photosensitive device includes a plurality of organic photoconductive materials disposed in a stack between a first electrode and a second electrode, including a first continuous layer of donor host material, a second continuous layer of acceptor host material, and at least one other organic photoconductive material disposed as a plurality of discontinuous islands between the first continuous layer and the second continuous layer. Each of these other photoconductive materials has an absorption spectra different from the donor host material and the acceptor host material. Preferably, each of the discontinuous islands consists essentially of a crystallite of the respective organic photoconductive material, and more preferably, the crystallites are nanocrystals.
摘要翻译：感光装置包括多个有机光电导材料，其布置在第一电极和第二电极之间的堆叠中，包括施主主体材料的第一连续层，受主主体材料的第二连续层和至少一个其它有机光电导材料被布置为在所述第一连续层和所述第二连续层之间的多个不连续岛。这些其它光电导材料中的每一种具有与供体主体材料和受主主体材料不同的吸收光谱。优选地，每个不连续岛基本上由相应有机光电导材料的微晶组成，更优选地，微晶是纳米晶体。

7. 发明申请

WO2008063519A3 ORGANIC HYBRID PLANAR-NANOCRYSTALLINE BULK HETEROJUNCTIONS 审中-公开
公开(公告)号：WO2008063519A3
公开(公告)日：2008-05-29
申请号：PCT/US2007/023912
申请日：2007-11-13
申请人： THE TRUSTEES OF PRINCETON UNIVERSITY , THE REGENTS OF THE UNIVERSITY OF MICHIGAN , FORREST, Stephen, R. , YANG, Fan
发明人： FORREST, Stephen, R. , YANG, Fan
IPC分类号： H01L51/42
摘要： A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials (950) disposed between the anode (120) and the cathode (170). The photoconductive materials (950) include a first continuous layer of donor material (152) and a second continuous layer of acceptor material (154). A first network of donor material or materials (953c) extends from the first continuous layer (152) toward the second continuous layer (154), providing continuous pathways for conduction of holes to the first continuous layer (152). A second network of acceptor material or materials (953b) extends from the second continuous layer (154) toward the first continuous layer (152), providing continuous pathways for conduction of electrons to the second continuous layer (154). The first network (953c) and the second network (953b) are interlaced with each other. At least one other photoconductive material (953a, 953d) is interspersed between the interlaced networks. This other photoconductive material or materials (953a, 953d) has an absorption spectra different from the donor and acceptor materials.

8. 发明公开

EP2171776A1 EFFICIENT SOLAR CELLS USING ALL-ORGANIC NANOCRYSTALLINE NETWORKS 审中-公开
标题翻译：具有完整的有机纳米晶网络的高效太阳能电池
公开(公告)号：EP2171776A1
公开(公告)日：2010-04-07
申请号：EP08796205.6
申请日：2008-07-16
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN , The Trustees of Princeton University
发明人： YANG, Fan , FORREST, Stephen, R.
IPC分类号： H01L51/42
CPC分类号： H01L51/4246 , B82Y10/00 , H01L27/302 , H01L51/0008 , H01L51/0046 , H01L51/0078 , H01L51/4253 , Y02E10/549
摘要： An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer; depositing a layer of a second organic semiconductor material on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; and depositing the first organic semiconductor material on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed. The depositing of the first and second organic semiconductor materials are alternated a number of times until a final layer of the second organic material is added to form a continuous layer. A second electrode is deposited over this final layer. One of the first electrode and the second electrode is transparent, and the first organic semiconductor material is one or more donor-type materials or one or more acceptor-type materials relative to second organic semiconductor material, which is one or more materials of the other material type.

9. 发明公开

EP2084755A2 INTERMEDIATE-BAND PHOTOSENSITIVE DEVICE WITH QUANTUM DOTS EMBEDDED IN ENERGY FENCE BARRIER 有权
标题翻译：光敏之间，设备能垒量子点嵌入式BAND
公开(公告)号：EP2084755A2
公开(公告)日：2009-08-05
申请号：EP07875015.5
申请日：2007-11-06
申请人： The Trustees of Princeton University , The Regents of the University of Michigan
发明人： FORREST, Stephen, R. , WEI, Guodan
IPC分类号： H01L31/052 , H01L31/0352 , H01L31/09 , H01L31/18
CPC分类号： H01L31/035236 , B82Y10/00 , B82Y15/00 , B82Y20/00 , H01L31/09 , H01L31/18
摘要： A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a- fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

10. 发明公开

EP2070131A2 CONTROLLED GROWTH OF LARGER HETEROJUNCTION INTERFACE AREA FOR ORGANIC PHOTOSENSITIVE DEVICES 有权
标题翻译：控制生长GREATER HETEROFLEXIBLE链路接口领域有机光敏器件
公开(公告)号：EP2070131A2
公开(公告)日：2009-06-17
申请号：EP07872544.7
申请日：2007-07-10
申请人： The Trustees of Princeton University , The Regents of the University of Michigan
发明人： YANG, Fan , FORREST, Stephen, R.
IPC分类号： H01L51/42 , H01L51/00
CPC分类号： H01L51/4246 , H01L51/0008 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.

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