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    • 6. 发明申请
    • LOW-POWER CMOS FLIP-FLOP
    • 低功耗CMOS FLIP-FLOP
    • WO2003085485A2
    • 2003-10-16
    • PCT/US2003/010320
    • 2003-04-04
    • THE REGENTS OF THE UNIVERSITY OF MICHIGANZIESLER, Conrad, H.PAPAEFTHYMIOU, Marios, C.
    • ZIESLER, Conrad, H.PAPAEFTHYMIOU, Marios, C.
    • G06F
    • H03K3/356121
    • A flip-flop (10) includes a charge storage area (22) that stores a logic voltage indicating a logic state of the flip-flop (10), a first transistor (20a) having a source or drain connected to a clock generating circuit (40), a second transistor (20b) having a source or drain connected to the clock signal generating circuit (40), a clock signal generated by the clock signal generating circuit (40) that is ramped or sinusoidal, and a latching circuit (18) that latches a latch voltage value based on voltages at the first transistor (20a) and the second transistor (20b). The charge storage area (22) supplies a first voltage representing a state of the storage voltage to a gate of the first transistor (20a) and supplies a second voltage to a gate of the second transistor (20b).
    • 触发器(10)包括存储指示触发器(10)的逻辑状态的逻辑电压的电荷存储区域(22),具有源极的第一晶体管(20a) 或漏极连接到时钟产生电路(40),第二晶体管(20b)具有连接到时钟信号产生电路(40)的源极或漏极,时钟信号产生电路(40)产生的斜坡 或正弦曲线,以及基于第一晶体管(20a)和第二晶体管(20b)处的电压锁存锁存电压值的锁存电路(18)。 电荷存储区域(22)向第一晶体管(20a)的栅极提供表示存储电压的状态的第一电压并且向第二晶体管(20b)的栅极提供第二电压。