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1. 发明授权

US07259412B2 Solid state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US07259412B2
公开(公告)日：2007-08-21
申请号：US11095592
申请日：2005-04-01
申请人： Tetsuya Yamaguchi , Hiroshige Goto , Masayuki Ayabe , Hisanori Ihara
发明人： Tetsuya Yamaguchi , Hiroshige Goto , Masayuki Ayabe , Hisanori Ihara
IPC分类号： H01L29/76
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14643
摘要： A solid state imaging device includes a substrate of a first conductivity type. A transistor, which includes a first gate electrode and a first and second impurity areas, is provided on a surface of the substrate. The first and second impurity areas are formed in the surface of the substrate and sandwich a region under the first gate electrode. A third impurity area of a second conductivity type is formed in the surface of the substrate and spaced from the second impurity area at an opposite side to the first gate electrode. A fourth impurity area is formed under the second impurity area and connected to the third impurity area. A second gate electrode is provided above the substrate. A fifth impurity area of the second conductivity type is formed in the surface of the substrate. The third and fifth impurity areas sandwich a region under the second gate electrode.
摘要翻译：固态成像装置包括第一导电类型的衬底。在衬底的表面上设置包括第一栅极电极和第一和第二杂质区域的晶体管。第一和第二杂质区域形成在衬底的表面中并夹着第一栅电极下的区域。第二导电类型的第三杂质区域形成在衬底的表面中，并且与第一栅电极相对的一侧与第二杂质区隔开。在第二杂质区下方形成第四杂质区，并与第三杂质区连接。在基板上设置第二栅电极。第二导电类型的第五杂质区域形成在衬底的表面中。第三和第五杂质区夹在第二栅电极下方的区域。

2. 发明申请

US20050242385A1 Solid state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US20050242385A1
公开(公告)日：2005-11-03
申请号：US11095592
申请日：2005-04-01
申请人： Tetsuya Yamaguchi , Hiroshige Goto , Masayuki Ayabe , Hisanori Ihara
发明人： Tetsuya Yamaguchi , Hiroshige Goto , Masayuki Ayabe , Hisanori Ihara
IPC分类号： H01L27/108 , H01L27/146 , H01L31/10 , H04N5/335 , H04N5/369 , H04N5/374
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14643
摘要： A solid state imaging device includes a substrate of a first conductivity type. A transistor, which includes a first gate electrode and a first and second impurity areas, is provided on a surface of the substrate. The first and second impurity areas are formed in the surface of the substrate and sandwich a region under the first gate electrode. A third impurity area of a second conductivity type is formed in the surface of the substrate and spaced from the second impurity area at an opposite side to the first gate electrode. A fourth impurity area is formed under the second impurity area and connected to the third impurity area. A second gate electrode is provided above the substrate. A fifth impurity area of the second conductivity type is formed in the surface of the substrate. The third and fifth impurity areas sandwich a region under the second gate electrode.
摘要翻译：固态成像装置包括第一导电类型的衬底。在衬底的表面上设置包括第一栅电极和第一和第二杂质区的晶体管。第一和第二杂质区域形成在衬底的表面中并夹着第一栅电极下的区域。第二导电类型的第三杂质区域形成在衬底的表面中并且与第一栅电极相对的一侧与第二杂质区隔开。在第二杂质区下方形成第四杂质区，并与第三杂质区连接。在基板上设置第二栅电极。第二导电类型的第五杂质区域形成在衬底的表面中。第三和第五杂质区夹在第二栅电极下方的区域。

3. 发明申请

US20080012088A1 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20080012088A1
公开(公告)日：2008-01-17
申请号：US11776791
申请日：2007-07-12
申请人： Tetsuya YAMAGUCHI , Hiroshige Goto , Hirofumi Yamashita , Ikuko Inoue , Nagataka Tanaka , Hisanori Ihara
发明人： Tetsuya YAMAGUCHI , Hiroshige Goto , Hirofumi Yamashita , Ikuko Inoue , Nagataka Tanaka , Hisanori Ihara
IPC分类号： H01L31/103
CPC分类号： H01L27/14609
摘要： An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.
摘要翻译：其中p型+外延层和n型外延层已经沉积在p < SUP + +型衬底。在n型外延层的表面区域中，形成了光电转换部的n型区域。此外，已经形成了由p型半导体区域构成的阻挡层，以将光电转换部件的n型区域包围在平面内并从P型半导体区域到达p型半导体区域基材表面。在芯片切割部分也形成了p型半导体区域，用于将基板分离为各个器件，从而从衬底表面到达p +型外延层。

4. 发明申请

US20060082669A1 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US20060082669A1
公开(公告)日：2006-04-20
申请号：US11251882
申请日：2005-10-18
申请人： Ikuko Inoue , Hirofumi Yamashita , Nagataka Tanaka , Hisanori Ihara , Tetsuya Yamaguchi , Hiroshige Goto
发明人： Ikuko Inoue , Hirofumi Yamashita , Nagataka Tanaka , Hisanori Ihara , Tetsuya Yamaguchi , Hiroshige Goto
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H01L27/14632 , H01L27/14636 , H01L27/14643
摘要： Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.
摘要翻译：设置在固态成像器件的半导体衬底上的每个单元电池包括将半导体衬底隔离成n型光电转换区域的第一p型阱，形成在表面的第二p型阱的光电转换区域，并且其中形成信号扫描电路部分的信号存储部分，以及形成在光电转换区域与第二p型光电转换区域的表面中的高掺杂n型层的信号存储部分杂质浓度高于光电转换区。信号存储部分，其部分放置在信号读出门的下面，适于将信号电荷的分组从存储部分传送到信号扫描电路部分，并且其部分位于读出栅极下方的最深处。

5. 发明申请

US20070108487A1 CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) TYPE SOLID-STATE IMAGE PICKUP DEVICE USING N/P+ SUBSTRATE IN WHICH N-TYPE SEMICONDUCTOR LAYER IS LAMINATED ON P+ TYPE SUBSTRATE MAIN BODY 有权
标题翻译： CMOS（补充金属氧化物半导体）类型固体状态图像拾取器件使用N + P +衬底，其中N型半导体层层合在P +型衬底上主体
公开(公告)号：US20070108487A1
公开(公告)日：2007-05-17
申请号：US11558200
申请日：2006-11-09
申请人： Ikuko Inoue , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Nagataka Tanaka , Tetsuya Yamaguchi
发明人： Ikuko Inoue , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Nagataka Tanaka , Tetsuya Yamaguchi
IPC分类号： H01L31/113
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/1463
摘要： A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.
摘要翻译：固态摄像装置包括：半导体衬底，包括具有P型杂质的衬底主体和设置在衬底主体上的第一N型半导体层;摄像区，包括多个光电转换器，其中多个光电转换器包括第二N型半导体层，第二N型半导体层彼此独立地设置在第一N型半导体层的表面部分上，第一外围电路区域包括第一P型半导体层，形成在第一N型半导体层上。固体摄像装置还包括第二外围电路区域，其包括形成在第一N型半导体层上并连接到基板主体的第二P型半导体层。

6. 发明授权

US07554141B2 Solid-state image pickup device and method of manufacturing the same 有权
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US07554141B2
公开(公告)日：2009-06-30
申请号：US11392616
申请日：2006-03-30
申请人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Ikuko Inoue , Nagataka Tanaka
发明人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Ikuko Inoue , Nagataka Tanaka
IPC分类号： H01L31/00 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14689 , H01L27/1463
摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.
摘要翻译：一种固态摄像装置，包括：半导体衬底，其包括含有P型杂质的衬底主体和包含N型杂质的第一N型半导体层，所述第一N型半导体层设置在所述衬底主体上;以及包括含有p型杂质的第一P型半导体层，其位于基板主体上，多个光电转换部分由第二N型半导体层形成，该第二N型半导体层在相应位置彼此独立地设置在第一N型半导体层的表面部分和形成为围绕光/电转换部分的多个第二P型半导体层，其沿着设置在表面部分中的各个位置的元件隔离区域设置的第一N型半导体层，并且从第一N型半导体的表面部分连续地延伸层到第一P型半导体层的表面部分。

7. 发明申请

US20060219867A1 Solid-state image pickup device and method of manufacturing the same 有权
公开(公告)号：US20060219867A1
公开(公告)日：2006-10-05
申请号：US11392616
申请日：2006-03-30
申请人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Ikuko Inoue , Nagataka Tanaka
发明人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Ikuko Inoue , Nagataka Tanaka
IPC分类号： H01L27/00 , H01L31/00
CPC分类号： H01L27/14689 , H01L27/1463
摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

8. 发明授权

US07889255B2 Solid-state imaging device comprising a signal storage section including a highly doped area 有权
标题翻译：固态成像装置包括包括高掺杂区域的信号存储部分
公开(公告)号：US07889255B2
公开(公告)日：2011-02-15
申请号：US11251882
申请日：2005-10-18
申请人： Ikuko Inoue , Hirofumi Yamashita , Nagataka Tanaka , Hisanori Ihara , Tetsuya Yamaguchi , Hiroshige Goto
发明人： Ikuko Inoue , Hirofumi Yamashita , Nagataka Tanaka , Hisanori Ihara , Tetsuya Yamaguchi , Hiroshige Goto
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/335 , H01L27/14632 , H01L27/14636 , H01L27/14643
摘要： Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.
摘要翻译：设置在固态成像器件的半导体衬底上的每个单元电池包括将半导体衬底隔离成n型光电转换区域的第一p型阱，形成在表面的第二p型阱的光电转换区域，并且其中形成信号扫描电路部分的信号存储部分，以及形成在光电转换区域与第二p型光电转换区域的表面中的高掺杂n型层的信号存储部分杂质浓度高于光电转换区。信号存储部分，其部分放置在信号读出门的下面，适于将信号电荷的分组从存储部分传送到信号扫描电路部分，并且其部分位于读出栅极下方的最深处。

9. 发明授权

US07855406B2 Solid-state imaging device and method of manufacturing the same 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US07855406B2
公开(公告)日：2010-12-21
申请号：US11776791
申请日：2007-07-12
申请人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Ikuko Inoue , Nagataka Tanaka , Hisanori Ihara
发明人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Ikuko Inoue , Nagataka Tanaka , Hisanori Ihara
IPC分类号： H01L31/062
CPC分类号： H01L27/14609
摘要： An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.
摘要翻译：提供了p型外延层和n型外延层已经沉积在p +型衬底上的n / p- / p +衬底。在n型外延层的表面区域中，形成了光电转换部的n型区域。此外，已经形成了由p型半导体区域构成的阻挡层，以将光电转换部件的n型区域包围在平面内并从衬底表面到达p型外延层。在芯片切割部分还形成了p型半导体区域，用于将衬底分成各个器件，从衬底表面到达p型外延层。

10. 发明授权

US07709870B2 CMOS (complementary metal oxide semiconductor) type solid-state image pickup device using N/P+ substrate in which N-type semiconductor layer is laminated on P+ type substrate main body 有权
标题翻译：使用其中N型半导体层层压在P +型基板主体上的N / P +基板的CMOS（互补金属氧化物半导体）型固体摄像装置
公开(公告)号：US07709870B2
公开(公告)日：2010-05-04
申请号：US11558200
申请日：2006-11-09
申请人： Ikuko Inoue , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Nagataka Tanaka , Tetsuya Yamaguchi
发明人： Ikuko Inoue , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Nagataka Tanaka , Tetsuya Yamaguchi
IPC分类号： H01L31/113
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/1463
摘要： A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.
摘要翻译：固态摄像装置包括：半导体衬底，包括具有P型杂质的衬底主体和设置在衬底主体上的第一N型半导体层;摄像区，包括多个光电转换器，其中多个光电转换器包括第二N型半导体层，第二N型半导体层彼此独立地设置在第一N型半导体层的表面部分上，第一外围电路区域包括第一P型半导体层，形成在第一N型半导体层上。固体摄像装置还包括第二外围电路区域，其包括形成在第一N型半导体层上并连接到基板主体的第二P型半导体层。

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