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1. 发明授权

US09935305B2 Secondary battery for large current charge and discharge characteristic 有权
公开(公告)号：US09935305B2
公开(公告)日：2018-04-03
申请号：US13293738
申请日：2011-11-10
申请人： Tetsuya Makino , Hiroshi Takabayashi , Tomoyuki Nakamura , Kunihiko Hayashi , Yosuke Konishi , Akira Sasaki , Akira Saito
发明人： Tetsuya Makino , Hiroshi Takabayashi , Tomoyuki Nakamura , Kunihiko Hayashi , Yosuke Konishi , Akira Sasaki , Akira Saito
IPC分类号： H01M2/06 , H01M2/10 , H01M4/64 , H01M2/22 , H01M4/70 , H01M4/02
CPC分类号： H01M2/22 , H01M4/70 , H01M2004/021 , H01M2220/30
摘要： There is provided a secondary battery including a battery device that has a thickness of 3 to 20 mm, and a battery discharge capacity of 3 to 50 Ah, and an exterior material that packages the battery device. The battery device includes a positive electrode that has a positive electrode current collector and a positive electrode active material layer, a negative electrode that has a negative electrode current collector and a negative electrode active material layer, a separator that is interposed between the positive electrode and the negative electrode that are alternately laminated, a positive electrode tab that is electrically connected to a positive electrode current collector exposed portion and is led-out to the outside of the exterior material, and a negative electrode tab that is electrically connected to a negative electrode current collector exposed portion and is led-out to the outside of the exterior material.

2. 发明申请

US20120121965A1 SECONDARY BATTERY, BATTERY UNIT, AND BATTERY MODULE 有权
标题翻译：二次电池，电池组和电池模块
公开(公告)号：US20120121965A1
公开(公告)日：2012-05-17
申请号：US13293738
申请日：2011-11-10
申请人： Tetsuya Makino , Hiroshi Takabayashi , Tomoyuki Nakamura , Kunihiko Hayashi , Yosuke Konishi , Akira Sasaki , Akira Saito
发明人： Tetsuya Makino , Hiroshi Takabayashi , Tomoyuki Nakamura , Kunihiko Hayashi , Yosuke Konishi , Akira Sasaki , Akira Saito
IPC分类号： H01M2/06 , H01M2/10 , H01M4/64
CPC分类号： H01M2/22 , H01M4/70 , H01M2004/021 , H01M2220/30
摘要： There is provided a secondary battery including a battery device that has a thickness of 3 to 20 mm, and a battery discharge capacity of 3 to 50 Ah, and an exterior material that packages the battery device. The battery device includes a positive electrode that has a positive electrode current collector and a positive electrode active material layer, a negative electrode that has a negative electrode current collector and a negative electrode active material layer, a separator that is interposed between the positive electrode and the negative electrode that are alternately laminated, a positive electrode tab that is electrically connected to a positive electrode current collector exposed portion and is led-out to the outside of the exterior material, and a negative electrode tab that is electrically connected to a negative electrode current collector exposed portion and is led-out to the outside of the exterior material.
摘要翻译：提供一种二次电池，其包括厚度为3〜20mm，电池放电容量为3〜50Ah的电池装置以及封装电池装置的外部材料。电池装置包括具有正极集电体和正极活性物质层的正极，负极集电体和负极活性物质层的负极，夹在正极和正极活性物质层之间的隔膜交替层叠的负极，与正极集电体露出部分电连接并被引出到外部材料的外部的正极片，以及与负极电连接的负极片集电器露出部分，并被引出到外部材料的外部。

3. 发明授权

US10682808B2 Three-dimensional object fabrication method, fabrication apparatus, and fabrication system 有权
公开(公告)号：US10682808B2
公开(公告)日：2020-06-16
申请号：US16056855
申请日：2018-08-07
申请人： Takashi Fujita , Akira Saito , Kiichi Kamoda , Yasutada Shitara , Kazuhiko Watanabe , Hitoshi Iwatsuki , Yuuya Endoh , Kazufumi Kimura , Yasuyuki Yamashita , Shinnosuke Koshizuka , Yuuki Kamon , Nozomu Tamoto
发明人： Takashi Fujita , Akira Saito , Kiichi Kamoda , Yasutada Shitara , Kazuhiko Watanabe , Hitoshi Iwatsuki , Yuuya Endoh , Kazufumi Kimura , Yasuyuki Yamashita , Shinnosuke Koshizuka , Yuuki Kamon , Nozomu Tamoto
IPC分类号： B29C64/147 , B29C64/218 , B29C64/40
摘要： A fabrication method includes laminating a fabrication material to form an object, and applying a release material on a surface of the object to form a release layer on the surface of the object. A surface free energy of the release material is equal to or smaller than 25 mN/m.

4. 发明申请

US20190284351A1 RESIN PARTICLES, PRODUCTION METHOD THEREOF, AND APPLICATION THEREOF FOR PRODUCTION OF THREE-DIMENSIONAL OBJECT 审中-公开
公开(公告)号：US20190284351A1
公开(公告)日：2019-09-19
申请号：US16351092
申请日：2019-03-12
申请人： Shigenori YAGUCHI , Yasuyuki Yamashita , Akira Saito , Kiichi Kamoda
发明人： Shigenori YAGUCHI , Yasuyuki Yamashita , Akira Saito , Kiichi Kamoda
IPC分类号： C08J5/04 , C08J3/12 , B29C70/62
摘要： Provided are resin particles including columnar resin particles each including filaments of a fibrous material, wherein the filaments of the fibrous material are aligned in an axial direction of each of the columnar resin particles.

5. 发明授权

US09173754B2 Stent 有权
标题翻译：支架
公开(公告)号：US09173754B2
公开(公告)日：2015-11-03
申请号：US13060395
申请日：2009-08-28
申请人： Yoshihiko Yokoi , Yasushi Hashimoto , Akira Saito
发明人： Yoshihiko Yokoi , Yasushi Hashimoto , Akira Saito
IPC分类号： A61F2/82 , A61F2/89
CPC分类号： A61F2/89 , A61F2250/0018
摘要： A stent including a plurality of loop stents connected by struts so that it bends uniformly as a whole.A stent A including a plurality of loop stents 2 connected by a plurality of struts 3, the loop stents 2 each formed of a stent main wire 1 folded into a zigzag shape and joined at its ends, wherein the bending strength of each strut 3 is larger than the bending strength of the stent main wire 1.
摘要翻译：一种支架，其包括通过支柱连接的多个环形支架，使得其整体上均匀地弯曲。支架A，其包括多个由多个支柱3连接的环形支架2，每个支架2由支架主线1形成，折叠成Z字形并在其端部连接，其中每个支柱3的弯曲强度为大于支架主线1的弯曲强度。

6. 发明申请

US20150076124A1 PROCESSING TARGET REFORMING APPARATUS, PRINTING APPARATUS, PRINTING SYSTEM, AND METHOD 有权
标题翻译：加工目标改造设备，印刷设备，印刷系统和方法
公开(公告)号：US20150076124A1
公开(公告)日：2015-03-19
申请号：US14486919
申请日：2014-09-15
申请人： Kengo Tsubaki , Yoshiyuki Araseki , Akira Saito
发明人： Kengo Tsubaki , Yoshiyuki Araseki , Akira Saito
IPC分类号： B23K10/00 , B23K9/28
CPC分类号： B41J2/06 , B41J11/0015 , H05H1/2406 , H05H1/46 , H05H2001/2412 , H05H2001/4682
摘要： A processing target reforming apparatus includes: a conveying unit that conveys a processing target along a conveyance path; a discharge unit including a plurality of discharge electrodes aligned along the conveyance path, a counter electrode with the conveyance path interposed therebetween, and a power source that applies a voltage waveform to the discharge electrodes; and a control unit that controls the discharge unit such that a phase of the voltage waveform applied to a first discharge electrode of the discharge electrodes at a timing when a certain point of the processing target passes between the first discharge electrode and the counter electrode is shifted with respect to a phase of the voltage waveform applied by the power source to a second discharge electrode of the discharge electrodes at a timing when the certain point of the processing target passes between the second discharge electrode and the counter electrode.
摘要翻译：一种加工对象重整装置，包括：输送单元，其沿着输送路径输送加工对象物; 放电单元，包括沿着输送路径排列的多个放电电极，具有介于其间的输送路径的对置电极和向放电电极施加电压波形的电源; 以及控制单元，其控制所述放电单元，使得在所述处理对象的某一点在所述第一放电电极和所述对置电极之间通过的时刻的施加到所述放电电极的第一放电电极的电压波形的相位偏移相对于处理对象的特定点在第二放电电极和对电极之间通过的时刻，由电源对放电电极的第二放电电极施加的电压波形的相位。

7. 发明申请

US20150000803A1 Cu-Ni-Si-BASED COPPER ALLOY SHEET HAVING EXCELLENT MOLD ABRASION RESISTANCE AND SHEAR WORKABILITY AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：具有优异的模具耐磨性和耐磨性的铜镍硅基铜合金板及其制造方法
公开(公告)号：US20150000803A1
公开(公告)日：2015-01-01
申请号：US14366921
申请日：2011-12-22
申请人： Jun-Ichi Kumagai , Yoshio Abe , Akira Saito , Shuzo Umezu , Ryo Iino
发明人： Jun-Ichi Kumagai , Yoshio Abe , Akira Saito , Shuzo Umezu , Ryo Iino
IPC分类号： C22F1/08 , C22C9/04 , C22C9/06
CPC分类号： C22F1/08 , C22C9/04 , C22C9/06 , H01B1/026
摘要： A Cu—Ni—Si-based copper alloy sheet of the invention has excellent mold abrasion resistance and shear workability while maintaining strength and conductivity, in which 1.0 mass % to 4.0 mass % of Ni is contained, 0.2 mass % to 0.9 mass % of Si is contained, the remainder is made up of Cu and inevitable impurities. The number of the Ni—Si precipitate particles having a grain diameter in a range of 20 nm to 80 nm in a surface layer that is as thick as 20% of the entire sheet thickness from the surface is represented by a particles/mm2, and the number of the Ni—Si precipitate particles having a grain diameter in a range of 20 nm to 80 nm in a portion below the surface layer is represented by b particles/mm2, a/b is in a range of 0.5 to 1.5.
摘要翻译：本发明的Cu-Ni-Si系铜合金板在保持强度和导电性的同时具有优异的模具耐磨性和剪切加工性，其中含有1.0质量％至4.0质量％的Ni，0.2质量％至0.9质量％含有Si，其余部分由Cu和不可避免的杂质构成。在表面层厚度为20nm〜80nm范围内的Ni-Si析出物颗粒的数量比表面积为整个板厚的20％以粒子数/ mm2表示，在表面层下面的部分，粒径在20nm〜80nm范围内的Ni-Si析出物颗粒的数量由b颗粒/ mm 2表示，a / b在0.5〜1.5的范围内。

8. 发明授权

US08680250B2 Method and device for extracting pollen proteins 有权
标题翻译：提取花粉蛋白的方法和装置
公开(公告)号：US08680250B2
公开(公告)日：2014-03-25
申请号：US13320738
申请日：2010-05-10
申请人： Tsuneo Yamaguchi , Akira Saito , Akio Kato
发明人： Tsuneo Yamaguchi , Akira Saito , Akio Kato
IPC分类号： A23J1/00 , C07K1/00 , C07K14/00 , C07K16/00 , C07K17/00
CPC分类号： A61K36/15 , A61K39/00 , C07K14/415
摘要： The present invention is one that, in a pollen protein extracting method, enables mass production, and while improving production efficiency, achieves a reduction in workload such as a reduction in man-hours, reductions in equipment cost and running cost, and an improvement of a work environment. Specifically, a pollen protein extracting method for extracting water-soluble protein from pollen is characterized by including: mixing the pollen and PBS; adding an aggregating agent including a natural inorganic component to a resultant mixed solution and performing stirring; and after formation of a pollen aggregate, performing filter filtration to perform solid-liquid separation.
摘要翻译：本发明是在花粉蛋白质提取方法中，能够进行批量生产，在提高生产效率的同时，能够减少工作时间，减少工时，降低设备成本和运行成本，并且提高一个工作环境。具体来说，从花粉中提取水溶性蛋白质的花粉蛋白质提取方法的特征在于：将花粉与PBS混合; 向得到的混合溶液中加入包含天然无机成分的凝集剂，进行搅拌; 在形成花粉骨料后进行过滤，进行固液分离。

9. 发明授权

US08564372B2 Circuit for compensating base current of transistor and amplifier circuit provided with the same 有权
标题翻译：用于补偿晶体管和放大器电路的基极电流补偿电路
公开(公告)号：US08564372B2
公开(公告)日：2013-10-22
申请号：US13234029
申请日：2011-09-15
申请人： Akira Saito
发明人： Akira Saito
IPC分类号： H03F3/04
CPC分类号： H03F1/14 , H03F1/56 , H03F3/211 , H03F3/3432 , H03F3/50 , H03F2200/408
摘要： According to one embodiment, a circuit for compensating fluctuation of a base current of a transistor is presented. The transistor has a base connected with an input terminal. The compensation circuit is provided with a first transistor, a current mirror circuit and a second transistor. The current mirror circuit mirrors a current which is supplied to a base of the first transistor. Further, the current mirror circuit supplies the obtained mirror current to the base of the transistor to be compensated. A base of the second transistor is connected with the input terminal electrically. The second transistor causes an early effect in the first transistor.
摘要翻译：根据一个实施例，提供了用于补偿晶体管的基极电流的波动的电路。晶体管具有与输入端连接的基极。补偿电路设置有第一晶体管，电流镜电路和第二晶体管。电流镜电路镜像被提供给第一晶体管的基极的电流。此外，电流镜电路将获得的镜电流提供给要补偿的晶体管的基极。第二晶体管的基极与输入端子电连接。第二晶体管在第一晶体管中产生早期效应。

10. 发明申请

US20130167988A1 Cu-Ni-Si-BASED COPPER ALLOY PLATE HAVING EXCELLENT DEEP DRAWING WORKABILITY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有优异深度绘图能力的Cu-Ni-Si基铜合金板及其制造方法
公开(公告)号：US20130167988A1
公开(公告)日：2013-07-04
申请号：US13808351
申请日：2010-07-07
申请人： Takeshi Sakurai , Yoshio Abe , Akira Saito , Yoshihiro Kameyama
发明人： Takeshi Sakurai , Yoshio Abe , Akira Saito , Yoshihiro Kameyama
IPC分类号： C22F1/08 , C22C9/04 , C22C9/10 , C22C9/06
CPC分类号： C22F1/08 , C22C9/04 , C22C9/06 , C22C9/10 , C22F1/00 , H01B1/026
摘要： The Cu—Ni—Si-based copper alloy plate contains 1.0 mass % to 3.0 mass % of Ni, and Si at a concentration of ⅙ to ¼ of the mass % concentration of Ni with a remainder of Cu and inevitable impurities, in which, when the average value of the aspect ratio (the minor axis of crystal grains/the major axis of crystal grains) of each crystal grains in an alloy structure is 0.4 to 0.6, the average value of GOS in the all crystal grains is 1.2° to 1.5°, and the ratio (Lσ/L) of the total special grain boundary length Lσ of special grain boundaries to the total grain boundary length L of crystal grain boundaries is 60% to 70%, the spring bending elastic limit becomes 450 N/mm2 to 600 N/mm2, the solder resistance to heat separation is favorable and deep drawing workability is excellent at 150° C. for 1000 hours.
摘要翻译： Cu-Ni-Si系铜合金板含有1.0质量％〜3.0质量％的Ni，Si的浓度为Ni的质量％浓度的1/6〜¼，余量为Cu和不可避免的杂质，当合金结构中每个晶粒的纵横比（晶粒的短轴/晶粒长轴）的平均值为0.4至0.6时，所有晶粒中GOS的平均值为1.2 °至1.5°，特殊晶界的总特殊晶界长度Lsigma与晶界边界长度L之比（Lsigma / L）为60％至70％，弹簧弯曲弹性极限为450 N / mm 2〜600N / mm 2，耐热耐热性良好，150℃下1000小时的深冲加工性优异。

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