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    • 1. 发明授权
    • Method of measuring dimension of pattern and method of forming pattern
    • 测量图案尺寸的方法和形成图案的方法
    • US07858271B2
    • 2010-12-28
    • US12191735
    • 2008-08-14
    • Tetsuya HirakiNaoki OhtaYoshiaki Tanaka
    • Tetsuya HirakiNaoki OhtaYoshiaki Tanaka
    • G03F1/00G03F1/14G03F7/20G01N23/04
    • G01B15/00G01B21/02G03F1/44G03F1/84
    • A method of measuring dimension of a first pattern with a narrow first width, and a second pattern with a second width wider than the first width of the first pattern and formed in a symmetrical appearance with respect to a center of the second pattern, the second pattern having edges opposed to each other defining the second width, includes a step of forming a pair of first dummy patterns each having a narrow width, the pair of first dummy patterns being spaced from the edges of the second pattern respectively by a distance approximate to the first width of the first pattern, a first measurement step of measuring, using a dimension measuring device, a spaced distance of one of the first dummy patterns from the edge of the second pattern and a width of the one of the first dummy patterns within the same field of view of the dimension measuring device, a second measurement step of measuring, using the dimension measuring device, a width of the first pattern under the same measurement condition as that of the first measurement step, and a calculation step of calculating a width of the second pattern from WB=2DA+WD+DC, where WB is the calculated width of the second pattern, DC is a design value of a distance between the centers of the pair of first dummy patterns, DA is a measured spaced distance of the one of the first dummy patterns from the edge of the second pattern, and WD is a measured width of the one of the first dummy patterns.
    • 一种测量具有窄的第一宽度的第一图案的尺寸的方法和具有比第一图案的第一宽度宽的第二宽度的第二图案并且相对于第二图案的中心形成为对称外观的方法,第二图案 具有彼此相对的限定第二宽度的边缘的图案包括形成每一个具有窄宽度的一对第一伪图案的步骤,所述一对第一伪图案分别与第二图案的边缘分开距离近似于 所述第一图案的第一宽度,第一测量步骤,使用尺寸测量装置测量所述第一伪图案之一与所述第二图案的边缘之间的间隔距离以及所述第一图案中的所述第一虚设图案之一的宽度 尺寸测量装置的相同视野,第二测量步骤,使用尺寸测量装置测量在相同测量公司下的第一图案的宽度 并且计算从WB = 2DA + WD + DC计算第二图案的宽度的计算步骤,其中WB是第二图案的计算宽度,DC是第二图案之间的距离的设计值 一对第一虚拟图形的中心DA是第一伪图案中的一个与第二图案的边缘的测量的间隔距离,并且WD是第一伪图案之一的测量宽度。
    • 5. 发明授权
    • CPP GMR device with ferromagnetic layer split in depth direction
    • 具有铁磁层的CPP GMR器件在深度方向上分裂
    • US07894166B2
    • 2011-02-22
    • US11924246
    • 2007-10-25
    • Hiroshi YamazakiNaoki Ohta
    • Hiroshi YamazakiNaoki Ohta
    • G11B5/39
    • G11B5/3932B82Y10/00B82Y25/00G11B2005/3996
    • A magneto-resistive effect device of a CPP structure includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together and formed with the nonmagnetic intermediate layer sandwiched between them. The first ferromagnetic layer and the second ferromagnetic layer are magnetically coupled via the nonmagnetic intermediate layer such that magnetizations of the first ferromagnetic layer and the second ferromagnetic layer are antiparallel with each other. Mutually antiparallel magnetizations of two magnetic layers lie in a medium opposite plane or front to rear direction and in a rear to front direction. The second ferromagnetic layer is divided by a nonmagnetic intervening layer into a front second ferromagnetic layer and a rear second ferromagnetic layer on the way from the front to the rear.
    • CPP结构的磁阻效应器件包括非磁性中间层以及堆叠在一起形成有非磁性中间层的第一铁磁层和第二铁磁层。 第一铁磁层和第二铁磁层经由非磁性中间层磁耦合,使得第一铁磁层和第二铁磁层的磁化彼此反平行。 两个磁性层的相互反平行磁化位于相对的平面或前后方向的介质中,并且位于从前到后的方向上。 第二铁磁层在从前到后的路上被非磁性中间层分成前第二铁磁层和后第二铁磁层。
    • 7. 发明申请
    • Thin-film patterning method for magnetoresistive device
    • 用于磁阻器件的薄膜图案化方法
    • US20090145878A1
    • 2009-06-11
    • US12000285
    • 2007-12-11
    • Naoki OhtaKazuki SatoKosuke Tanaka
    • Naoki OhtaKazuki SatoKosuke Tanaka
    • B44C1/22
    • G03B31/00G11B5/3163G11B5/3903G11B5/3909
    • The thin-film patterning method for a magnetoresistive device comprises forming a functional layer on a substrate; forming a first mask layer above the functional layer; forming a patterned resist on the first mask layer; etching the first mask layer by using the resist; removing the resist; forming a second mask layer by atomic layer deposition, the second mask layer covering a step defined by an edge of the first mask layer; dry-etching the second mask layer in a thickness direction of the substrate so as to leave the second mask layer on a side face of the step; removing the first mask layer so as to expose the functional layer under the first mask; and dry-etching the functional layer by using the second mask layer.
    • 用于磁阻器件的薄膜构图方法包括在衬底上形成功能层; 在功能层上形成第一掩模层; 在所述第一掩模层上形成图案化抗蚀剂; 通过使用抗蚀剂来蚀刻第一掩模层; 去除抗蚀剂; 通过原子层沉积形成第二掩模层,所述第二掩模层覆盖由所述第一掩模层的边缘限定的台阶; 在所述基板的厚度方向上干蚀刻所述第二掩模层,以使所述第二掩模层在所述台阶的侧面上离开; 去除所述第一掩模层以使所述功能层暴露在所述第一掩模下方; 并通过使用第二掩模层对功能层进行干蚀刻。
    • 10. 发明授权
    • Rankine cycle device
    • 兰金循环装置
    • US07000394B2
    • 2006-02-21
    • US10363539
    • 2001-09-04
    • Naoki OhtaNaoki ItohTsuneo EndohTsutomu TakahashiKensuke Honma
    • Naoki OhtaNaoki ItohTsuneo EndohTsutomu TakahashiKensuke Honma
    • F01K7/34
    • F01C21/18F01C1/3446F01C21/0836F01K7/00F02G5/04Y02T10/166
    • A Rankine cycle system is provided in which, with regard to a given relationship between the pressure (Pevp) and the temperature (Tevp) of a vapor that is taken into an expander (4) that includes a cylinder chamber in a first stage and a vane chamber in a second stage, the chambers being disposed in line, the expansion ratio of the vapor that the expander (4) takes in and discharges is set at a predetermined expansion ratio (ε) according to the given relationship so that the pressure (Pexp2) and the temperature (Texp2) of the vapor that is discharged from the expander (4) coincide with target values, thereby making the expander (4) and the condenser (5) exhibit maximum performance. Since the vapor within the cylinder chamber in the first stage is in a superheated vapor region and contains no water, the phenomenon of water hammer will not be caused in the cylinder chamber. Furthermore, since the vapor at the exit of the vane chamber is in a saturated vapor region and contains water, the vane chamber can be lubricated and sealed by means of the water.
    • 提供了一种兰金循环系统,其中,关于压力(Pevp)和进入到包括第一级中的气缸室的膨胀器(4)的蒸汽的温度(Tevp)之间的给定关系,以及 在第二阶段的叶片室中,室被排成一列,膨胀器(4)吸入和排出的蒸气的膨胀比根据给定的关系设定在预定的膨胀比(ε),使得压力 Pexp 2),从膨胀机(4)排出的蒸气的温度(Texp 2)与目标值一致,从而使膨胀机(4)和冷凝器(5)呈现最大性能。 由于第一阶段的气缸室内的蒸气处于过热蒸汽区域并且不含水,所以在气缸室中不会产生水锤现象。 此外,由于叶片室的出口处的蒸汽处于饱和蒸汽区域并且含有水,所以叶片室可以通过水被润滑和密封。