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    • 2. 发明授权
    • Method of forming a multilayer thin film
    • 形成多层薄膜的方法
    • US4462881A
    • 1984-07-31
    • US322697
    • 1981-11-18
    • Hiroshi YamamotoNoboru ShimizuMasahide SuenagaYukihisa TsukadaTooru Takeura
    • Hiroshi YamamotoNoboru ShimizuMasahide SuenagaYukihisa TsukadaTooru Takeura
    • G11B5/31G11B5/39H01F41/34C23C15/00
    • G11B5/3903H01F41/34
    • A method of forming a multilayer thin film is disclosed in which a second thin conductive film is deposited on a first thin conductive film uninterruptedly after the first thin film has been deposited on a substrate, the first and second films thus formed are processed so as to form a predetermined pattern, the surface of the second thin film is cleaned by ion etching and a third thin conductive film is deposited on the whole surface of the substrate, and then the second and third thin films are processed so as to have a pattern different from the above-mentioned predetermined pattern. In the case where two thin conductive films different in material and pattern from each other are piled on a substrate, the above method can form a perfect interconnection between the two films and can make very small the contact resistance between the two films. Accordingly, the method is fit to form, for example, a barber pole type magnetoresistive element.
    • 公开了一种形成多层薄膜的方法,其中在第一薄膜沉积在基底上之后,第二薄导电膜不间断地沉积在第一薄导电膜上,这样形成的第一和第二薄膜被加工成 形成预定图案,通过离子蚀刻来清洁第二薄膜的表面,并且在基板的整个表面上沉积第三薄导电膜,然后处理第二和第三薄膜以具有不同的图案 从上述预定图案。 在材料和图案彼此不同的两个薄导电膜堆叠在基板上的情况下,上述方法可以形成两个膜之间的完美互连,并且可以使两个膜之间的接触电阻非常小。 因此,该方法适合于形成例如理发杆型磁阻元件。