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    • 7. 发明授权
    • Method of forming thin film
    • 薄膜形成方法
    • US08450439B2
    • 2013-05-28
    • US12641183
    • 2009-12-17
    • Takayuki ArakiTetsuhiro Kodani
    • Takayuki ArakiTetsuhiro Kodani
    • C08F14/18
    • C08F114/22C07C21/18Y10T428/3154Y10T428/31544
    • There is provided a method of forming a thin film of vinylidene fluoride homopolymer having crystal form I which is applicable to various substrates in relatively easy way (coating conditions, application method, etc.), a process for preparing a vinylidene fluoride homopolymer having crystal form I efficiently at high purity, and novel vinylidene fluoride homopolymers which can give a thin film being excellent in ferroelectricity. The method of forming a thin film of vinylidene fluoride homopolymer comprises (i) a step for preparing a green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component by subjecting vinylidene fluoride to radical polymerization in the presence of a bromine compound or iodine compound having 1 to 20 carbon atoms which contains at least one moiety represented by —CRf1Rf2X1, wherein X1. is iodine atom or bromine atom; Rf1. and Rf2. are the same or different and each is selected from fluorine atom or perfluoroalkyl groups having 1 to 5 carbon atoms and (ii) a step for forming a thin film on a substrate surface by using vinylidene fluoride homopolymer which comprises crystal form I alone or as main component and is obtained from the green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component.
    • 提供一种以相对容易的方式(涂布条件,涂布方法等)形成可以适用于各种基材的结晶形式I的偏二氟乙烯均聚物的薄膜的方法,制备具有结晶形式的偏二氟乙烯均聚物 我高效率地得到高纯度的新型偏二氟乙烯均聚物,可以得到铁电性优异的薄膜。 形成偏氟乙烯均聚物薄膜的方法包括(i)通过在溴化合物的存在下使偏二氟乙烯进行自由基聚合,制备单晶或单体晶形的偏二氟乙烯均聚物的生粉产物的步骤 或含有至少一个由-CR f 1 R f 2 X 1表示的部分的具有1至20个碳原子的碘化合物,其中X1。 是碘原子或溴原子; Rf1。 和Rf2。 相同或不同,分别选自具有1至5个碳原子的氟原子或全氟烷基,和(ii)通过使用单晶形式的主要含氟乙烯均聚物或作为主要成分的偏氟乙烯均聚物在基材表面上形成薄膜的步骤 从单独的晶形I或作为主要成分的偏氟乙烯均聚物的绿色粉末产品获得。
    • 8. 发明授权
    • Method of forming thin film
    • 薄膜形成方法
    • US07655742B2
    • 2010-02-02
    • US11231992
    • 2005-09-22
    • Takayuki ArakiTetsuhiro Kodani
    • Takayuki ArakiTetsuhiro Kodani
    • C08F14/18
    • C08F114/22C07C21/18Y10T428/3154Y10T428/31544
    • There is provided a method of forming a thin film of vinylidene fluoride homopolymer having crystal form I which is applicable to various substrates in relatively easy way (coating conditions, application method, etc.), a process for preparing a vinylidene fluoride homopolymer having crystal form I efficiently at high purity, and novel vinylidene fluoride homopolymers which can give a thin film being excellent in ferroelectricity. The method of forming a thin film of vinylidene fluoride homopolymer comprises (i) a step for preparing a green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component by subjecting vinylidene fluoride to radical polymerization in the presence of a bromine compound or iodine compound having 1 to 20 carbon atoms which contains at least one moiety represented by —CRf1Rf2X1, wherein X1 is iodine atom or bromine atom; Rf1 and Rf2 are the same or different and each is selected from fluorine atom or perfluoroalkyl groups having 1 to 5 carbon atoms and (ii) a step for forming a thin film on a substrate surface by using vinylidene fluoride homopolymer which comprises crystal form I alone or as main component and is obtained from the green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component.
    • 提供一种以相对容易的方式(涂布条件,涂布方法等)形成可以适用于各种基材的结晶形式I的偏二氟乙烯均聚物的薄膜的方法,制备具有结晶形式的偏二氟乙烯均聚物 我高效率地得到高纯度的新型偏二氟乙烯均聚物,可以得到铁电性优异的薄膜。 形成偏氟乙烯均聚物薄膜的方法包括(i)通过在溴化合物的存在下使偏二氟乙烯进行自由基聚合,制备单晶或单体晶形的偏二氟乙烯均聚物的生粉产物的步骤 或含有至少一个由-CR f 1 R f 2 X 1表示的部分的碳原子数为1〜20的碘化合物,其中X1为碘原子或溴原子; Rf1和Rf2相同或不同,分别选自具有1〜5个碳原子的氟原子或全氟烷基,(ii)通过使用仅含有晶型I的偏二氟乙烯均聚物在基板表面上形成薄膜的步骤 或作为主要成分,并且由包含单晶晶体I或主要成分的偏二氟乙烯均聚物的绿色粉末产品获得。
    • 9. 发明授权
    • Method of forming ferroelectric thin film
    • 形成铁电薄膜的方法
    • US07517548B2
    • 2009-04-14
    • US11231976
    • 2005-09-22
    • Takayuki ArakiTetsuhiro Kodani
    • Takayuki ArakiTetsuhiro Kodani
    • B05D5/12B05D1/12
    • C08F14/22H01L41/317H01L41/45
    • A method of forming a ferroelectric thin film containing vinylidene fluoride homopolymer, including the steps of (i) preparing a green powder of vinylidene fluoride homopolymer of crystal form I alone or as main component by subjecting vinylidene fluoride to radical polymerization in the presence of a radical polymerization initiator, (ii) forming a thin film on a substrate surface by using vinylidene fluoride homopolymer of crystal form I alone or as main component obtained from the green powder product of vinylidene fluoride homopolymer of I-form crystal structure alone or as main component, and (iii) subjecting the thin film of vinylidene fluoride homopolymer formed in step (ii) above to polarization.
    • 一种形成含有偏二氟乙烯均聚物的铁电薄膜的方法,包括以下步骤:(i)通过在基团存在下使偏二氟乙烯进行自由基聚合,制备单晶晶形I偏二氟乙烯均聚物或主要成分的绿色粉末 聚合引发剂,(ii)通过单独使用晶型I的偏二氟乙烯均聚物或作为主要成分在I型晶体结构的偏二氟乙烯均聚物的主要成分中作为主要成分,在基板表面上形成薄膜, 和(iii)使上述步骤(ii)中形成的偏二氟乙烯均聚物的薄膜经极化。
    • 10. 发明申请
    • METHOD OF FORMING THIN FILM
    • 形成薄膜的方法
    • US20100093962A1
    • 2010-04-15
    • US12641183
    • 2009-12-17
    • Takayuki ArakiTetsuhiro Kodani
    • Takayuki ArakiTetsuhiro Kodani
    • C08F214/22
    • C08F114/22C07C21/18Y10T428/3154Y10T428/31544
    • There is provided a method of forming a thin film of vinylidene fluoride homopolymer having crystal form I which is applicable to various substrates in relatively easy way (coating conditions, application method, etc.), a process for preparing a vinylidene fluoride homopolymer having crystal form I efficiently at high purity, and novel vinylidene fluoride homopolymers which can give a thin film being excellent in ferroelectricity. The method of forming a thin film of vinylidene fluoride homopolymer comprises (i) a step for preparing a green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component by subjecting vinylidene fluoride to radical polymerization in the presence of a bromine compound or iodine compound having 1 to 20 carbon atoms which contains at least one moiety represented by —CRf1Rf2X1, wherein X1 is iodine atom or bromine atom; Rf1 and Rf2 are the same or different and each is selected from fluorine atom or perfluoroalkyl groups having 1 to 5 carbon atoms and (ii) a step for forming a thin film on a substrate surface by using vinylidene fluoride homopolymer which comprises crystal form I alone or as main component and is obtained from the green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component.
    • 提供一种以相对容易的方式(涂布条件,涂布方法等)形成可以适用于各种基材的结晶形式I的偏二氟乙烯均聚物的薄膜的方法,制备具有结晶形式的偏二氟乙烯均聚物 我高效率地得到高纯度的新型偏二氟乙烯均聚物,可以得到铁电性优异的薄膜。 形成偏氟乙烯均聚物薄膜的方法包括(i)通过在溴化合物的存在下使偏二氟乙烯进行自由基聚合,制备单晶或单体晶形的偏二氟乙烯均聚物的生粉产物的步骤 或含有至少一个由-CR f 1 R f 2 X 1表示的部分的碳原子数为1〜20的碘化合物,其中X1为碘原子或溴原子; Rf1和Rf2相同或不同,分别选自具有1〜5个碳原子的氟原子或全氟烷基,(ii)通过使用仅含有晶型I的偏二氟乙烯均聚物在基板表面上形成薄膜的步骤 或作为主要成分,并且由包含单晶晶体I或主要成分的偏二氟乙烯均聚物的绿色粉末产品获得。