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1. 发明授权

US06861367B2 Semiconductor processing method using photoresist and an antireflective coating 失效
标题翻译：使用光致抗蚀剂和抗反射涂层的半导体加工方法
公开(公告)号：US06861367B2
公开(公告)日：2005-03-01
申请号：US10719640
申请日：2003-11-21
申请人： Terry L. Gilton , Steve W. Bowes , John T. Moore , Joseph F. Brooks , Kristy A. Campbell
发明人： Terry L. Gilton , Steve W. Bowes , John T. Moore , Joseph F. Brooks , Kristy A. Campbell
IPC分类号： G03F7/09 , H01L21/027 , H01L21/308 , H01L21/768 , H01L21/4763
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/3081 , H01L21/76802 , Y10S438/952
摘要： A semiconductor processing method includes forming an antireflective coating comprising Ge and Se over a substrate to be patterned. Photoresist is formed over the antireflective coating. The photoresist is exposed to actinic radiation effective to pattern the photoresist. The antireflective coating reduces reflection of actinic radiation during the exposing than would otherwise occur under identical conditions in the absence of the antireflective coating. After the exposing, the substrate is patterned through openings in the photoresist and the antireflective coating using the photoresist and the antireflective coating as a mask. In one implementation, after patterning the substrate, the photoresist and the antireflective coating are chemically etched substantially completely from the substrate using a single etching chemistry.
摘要翻译：半导体处理方法包括在待图案化的基板上形成包含Ge和Se的抗反射涂层。在抗反射涂层上形成光致抗蚀剂。光致抗蚀剂暴露于光化辐射，有效地对光致抗蚀剂进行图案化。抗反射涂层减少曝光期间光化辐射的反射，否则在不存在抗反射涂层的同一条件下会发生。曝光后，使用光致抗蚀剂和抗反射涂层作为掩模，将光刻胶和防反射涂层中的开口图案化基板。在一个实施方案中，在图案化基板之后，使用单一蚀刻化学法，使基板完全从基板上完全蚀刻光致抗蚀剂和抗反射涂层。

2. 发明授权

US07064080B2 Semiconductor processing method using photoresist and an antireflective coating 有权
公开(公告)号：US07064080B2
公开(公告)日：2006-06-20
申请号：US10071425
申请日：2002-02-08
申请人： Terry L. Gilton , Steve W. Bowes , John T. Moore , Joseph F. Brooks , Kristy A. Campbell
发明人： Terry L. Gilton , Steve W. Bowes , John T. Moore , Joseph F. Brooks , Kristy A. Campbell
IPC分类号： H01L21/302
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/3081 , H01L21/76802 , Y10S438/952
摘要： A semiconductor processing method includes forming an antireflective coating comprising Ge and Se over a substrate to be patterned. Photoresist is formed over the antireflective coating. The photoresist is exposed to actinic radiation effective to pattern the photoresist. The antireflective coating reduces reflection of actinic radiation during the exposing than would otherwise occur under identical conditions in the absence of the antireflective coating. After the exposing, the substrate is patterned through openings in the photoresist and the antireflective coating using the photoresist and the antireflective coating as a mask. In one implementation, after patterning the substrate, the photoresist and the antireflective coating are chemically etched substantially completely from the substrate using a single etching chemistry.

3. 发明授权

US07542319B2 Chalcogenide glass constant current device, and its method of fabrication and operation 有权
标题翻译：硫族化物玻璃恒流装置及其制造和操作方法
公开(公告)号：US07542319B2
公开(公告)日：2009-06-02
申请号：US11653883
申请日：2007-01-17
申请人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Joseph F. Brooks
发明人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Joseph F. Brooks
IPC分类号： G11C27/00
CPC分类号： C03C3/321 , C03C17/02 , G11C13/0004 , G11C13/0011 , G11C27/00 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/1608 , H01L45/1641
摘要： The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also provides a method of changing and resetting the constant current value in a constant current device by either applying a positive potential to decrease the constant current value, or by applying a voltage more negative than the existing constant current's voltage upper limit, thereby resetting or increasing its constant current level to its original fabricated value. The invention further provides a method of forming and converting a memory device into a constant current device. The invention also provides a method for using a constant current device as an analog memory device.
摘要翻译：本发明涉及用于提供两端恒流装置的方法和装置及其操作。本发明提供一种恒定电流器件，其在至少约700mV的施加电压范围内保持恒定电流。本发明还提供了通过施加正电位以减小恒定电流值或施加比现有恒定电流电压上限更负的电压来改变和重置恒定电流装置中的恒定电流值的方法，由此重置或将其恒定电流水平提高到其原始制造值。本发明还提供一种将存储器件形成和转换成恒流器件的方法。本发明还提供一种使用恒流装置作为模拟存储装置的方法。

4. 发明授权

US06912147B2 Chalcogenide glass constant current device, and its method of fabrication and operation 有权
标题翻译：硫族化物玻璃恒流装置及其制造和操作方法
公开(公告)号：US06912147B2
公开(公告)日：2005-06-28
申请号：US10876664
申请日：2004-06-28
申请人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Joseph F. Brooks
发明人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Joseph F. Brooks
IPC分类号： C03C3/32 , C03C17/02 , G05F1/44 , G11C16/02 , H01L27/00 , H01L29/06 , H01L45/00 , G11C13/00
CPC分类号： C03C3/321 , C03C17/02 , G11C13/0004 , G11C13/0011 , G11C27/00 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/1608 , H01L45/1641
摘要： The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also provides a method of changing and resetting the constant current value in a constant current device by either applying a positive potential to decrease the constant current value, or by applying a voltage more negative than the existing constant current's voltage upper limit, thereby resetting or increasing its constant current level to its original fabricated value. The invention further provides a method of forming and converting a memory device into a constant current device. The invention also provides a method for using a constant current device as an analog memory device.
摘要翻译：本发明涉及用于提供两端恒流装置的方法和装置及其操作。本发明提供一种恒定电流器件，其在至少约700mV的施加电压范围内保持恒定电流。本发明还提供了通过施加正电位以减小恒定电流值或施加比现有恒定电流电压上限更负的电压来改变和重置恒定电流装置中的恒定电流值的方法，由此重置或将其恒定电流水平提高到其原始制造值。本发明还提供一种将存储器件形成和转换成恒流器件的方法。本发明还提供一种使用恒流装置作为模拟存储装置的方法。

5. 发明授权

US06813178B2 Chalcogenide glass constant current device, and its method of fabrication and operation 有权
公开(公告)号：US06813178B2
公开(公告)日：2004-11-02
申请号：US10386028
申请日：2003-03-12
申请人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Joseph F. Brooks
发明人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Joseph F. Brooks
IPC分类号： G11C1100
CPC分类号： C03C3/321 , C03C17/02 , G11C13/0004 , G11C13/0011 , G11C27/00 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/1608 , H01L45/1641
摘要： The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also provides a method of changing and resetting the constant current value in a constant current device by either applying a positive potential to decrease the constant current value, or by applying a voltage more negative than the existing constant current's voltage upper limit, thereby resetting or increasing its constant current level to its original fabricated value. The invention further provides a method of forming and converting a memory device into a constant current device. The invention also provides a method for using a constant current device as an analog memory device.

6. 发明授权

US07315465B2 Methods of operating and forming chalcogenide glass constant current devices 有权
标题翻译：操作和形成硫族化物玻璃恒流装置的方法
公开(公告)号：US07315465B2
公开(公告)日：2008-01-01
申请号：US11033873
申请日：2005-01-13
申请人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Joseph F. Brooks
发明人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Joseph F. Brooks
IPC分类号： G11C13/00
CPC分类号： C03C3/321 , C03C17/02 , G11C13/0004 , G11C13/0011 , G11C27/00 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/1608 , H01L45/1641
摘要： The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also provides a method of changing and resetting the constant current value in a constant current device by either applying a positive potential to decrease the constant current value, or by applying a voltage more negative than the existing constant current's voltage upper limit, thereby resetting or increasing its constant current level to its original fabricated value. The invention further provides a method of forming and converting a memory device into a constant current device. The invention also provides a method for using a constant current device as an analog memory device.
摘要翻译：本发明涉及用于提供两端恒流装置的方法和装置及其操作。本发明提供一种恒定电流器件，其在至少约700mV的施加电压范围内保持恒定电流。本发明还提供了通过施加正电位以减小恒定电流值或施加比现有恒定电流电压上限更负的电压来改变和重置恒定电流装置中的恒定电流值的方法，由此重置或将其恒定电流水平提高到其原始制造值。本发明还提供一种将存储器件形成和转换成恒流器件的方法。本发明还提供一种使用恒流装置作为模拟存储装置的方法。

7. 发明授权

US07518212B2 Graded GexSe100-x concentration in PCRAM 有权
标题翻译：在PCRAM中分级GexSe100-x浓度
公开(公告)号：US07518212B2
公开(公告)日：2009-04-14
申请号：US11195642
申请日：2005-08-03
申请人： John T. Moore , Terry L. Gilton , Kristy A. Campbell
发明人： John T. Moore , Terry L. Gilton , Kristy A. Campbell
IPC分类号： H01L29/00
CPC分类号： H01L45/1683 , H01L45/085 , H01L45/1233 , H01L45/143 , H01L45/1658
摘要： The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also provides a method of fabricating the disclosed PCRAM structure.
摘要翻译：本发明提供了一种PCRAM元件的设计，其结合了多种不同化学计量的含金属的硒化锗玻璃层。本发明还提供了制造所公开的PCRAM结构的方法。

8. 发明授权

US07459764B2 Method of manufacture of a PCRAM memory cell 有权
标题翻译： PCRAM存储单元的制造方法
公开(公告)号：US07459764B2
公开(公告)日：2008-12-02
申请号：US10886676
申请日：2004-07-09
申请人： John T. Moore , Kristy A. Campbell , Terry L. Gilton
发明人： John T. Moore , Kristy A. Campbell , Terry L. Gilton
IPC分类号： H01L29/00
CPC分类号： H01L45/1683 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/143 , H01L45/1658
摘要： The invention provides a method of forming a resistance variable memory element and the resulting element. The method includes forming an insulating layer having an opening therein; forming a metal containing layer recessed in the opening; forming a resistance variable material in the opening and over the metal containing layer; and processing the resistance variable material and metal containing layer to produce a resistance variable material containing a diffused metal within the opening.
摘要翻译：本发明提供一种形成电阻可变存储元件和所得元件的方法。该方法包括形成其中具有开口的绝缘层; 形成凹陷在所述开口中的含金属层; 在所述开口内和所述含金属层上形成电阻变化材料; 并且处理电阻可变材料和含金属层以产生在开口内含有扩散金属的电阻变化材料。

9. 发明授权

US07348205B2 Method of forming resistance variable devices 有权
标题翻译：形成电阻变量器件的方法
公开(公告)号：US07348205B2
公开(公告)日：2008-03-25
申请号：US11085009
申请日：2005-03-21
申请人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Jiutao Li
发明人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Jiutao Li
IPC分类号： H01L21/00
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1641 , H01L45/1658 , H01L45/1683
摘要： A method of forming a resistance variable device includes forming a first conductive electrode material on a substrate. A metal doped chalcogenide comprising material is formed over the first conductive electrode material. Such comprises the metal and AxBy, where “B” is selected from S, Se and Te and mixtures thereof, and where “A” comprises at least one element which is selected from Group 13, Group 14, Group 15, or Group 17 of the periodic table. In one aspect, the chalcogenide comprising material is exposed to an HNO3 solution. In one aspect the outer surface is oxidized effective to form a layer comprising at least one of an oxide of “A” or an oxide of “B”. In one aspect, a passivating material is formed over the metal doped chalcogenide comprising material. A second conductive electrode material is deposited, and a second conductive electrode material of the device is ultimately formed therefrom.
摘要翻译：形成电阻可变器件的方法包括在衬底上形成第一导电电极材料。在第一导电电极材料上形成包含材料的掺杂金属的硫族化物。其中“B”选自S，Se和Te及其混合物，其中“A”包括至少一个元素其选自周期表的第13组，第14组，第15组或第17组。在一个方面，将包含硫属元素的材料暴露于HNO 3 N 3溶液中。在一个方面，外表面被有效地氧化以形成包含“A”的氧化物或“B”的氧化物中的至少一种的层。在一个方面，在包含金属的硫族化物的材料上形成钝化材料。沉积第二导电电极材料，并且最终由器件的第二导电电极材料形成。

10. 发明授权

US07087454B2 Fabrication of single polarity programmable resistance structure 有权
标题翻译：制造单极性可编程电阻结构
公开(公告)号：US07087454B2
公开(公告)日：2006-08-08
申请号：US10800707
申请日：2004-03-16
申请人： Kristy A. Campbell , John T. Moore , Terry L. Gilton
发明人： Kristy A. Campbell , John T. Moore , Terry L. Gilton
IPC分类号： H01L21/06
CPC分类号： G11C13/0004 , G11C13/0011 , G11C13/0069 , G11C2013/009 , G11C2213/55 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/1616 , H01L45/1625
摘要： A resistance variable memory element with improved data retention and switching characteristics switched between resistance memory states upon the application of write pulses having the same polarity. The resistance variable memory element can be provided having at least one silver-selenide layer in between glass layers, the glass layers are a chalcogenide glass having a GexSe100−x composition.
摘要翻译：具有改进的数据保持和开关特性的电阻可变存储元件在施加具有相同极性的写入脉冲时在电阻存储器状态之间切换。可以提供电阻可变存储元件，其在玻璃层之间具有至少一个银硒化物层，玻璃层是具有Ge x Sb 1 O x 100 x x 组成。

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