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1. 发明授权

US4303490A Exhaust electrode process for exhaust gas oxygen sensor 失效
标题翻译：废气氧传感器排气电极工艺
公开(公告)号：US4303490A
公开(公告)日：1981-12-01
申请号：US189732
申请日：1980-09-22
申请人： Terry J. Gold , Frederick L. Kennard, III , Paul C. Kikuchi , Ralph V. Wilhelm, Jr.
发明人： Terry J. Gold , Frederick L. Kennard, III , Paul C. Kikuchi , Ralph V. Wilhelm, Jr.
IPC分类号： C03C17/09 , C23C14/18 , C23C14/35 , G01N27/407 , H01M8/12 , C23C15/00
CPC分类号： G01N27/4075 , C03C17/09 , C23C14/185 , H01M4/9058
摘要： A method of sputtering a palladium or palladium-platinum exhaust gas electrode onto a vitrified zirconia thimble for an electrochemical-type exhaust gas oxygen sensor. Porous high surface area films are deposited that have more consistent properties. A sputtering target is spaced about 3.0-4.5 cm from the thimble and more than 6 cm from the sputtering anode. A pressure of about 10-20 millitorr is used during sputtering at a DC power of about 13-22 watts/cm.sup.2 of target area.
摘要翻译：将钯或钯 - 铂废气电极溅射到用于电化学型排气氧传感器的玻璃化氧化锆套管上的方法。沉积具有更一致性质的多孔高表面积膜。溅射靶与套管间隔约3.0-4.5厘米，距离溅射阳极大6厘米。在溅射期间以约13-22瓦特/平方厘米的目标区域的DC功率使用约10-20毫托的压力。

2. 发明授权

US4244798A Exhaust electrode process for exhaust gas oxygen sensor 失效
标题翻译：废气氧传感器排气电极工艺
公开(公告)号：US4244798A
公开(公告)日：1981-01-13
申请号：US89264
申请日：1979-10-29
申请人： Terry J. Gold , Frederick L. Kennard, III , Paul C. Kikuchi , Ralph V. Wilhelm, Jr.
发明人： Terry J. Gold , Frederick L. Kennard, III , Paul C. Kikuchi , Ralph V. Wilhelm, Jr.
IPC分类号： C03C17/09 , C23C14/18 , C23C14/35 , G01N27/407 , H01M8/12 , C23C15/00
CPC分类号： G01N27/4075 , C03C17/09 , C23C14/185 , H01M4/9058
摘要： A method of sputtering a platinum exhaust gas electrode onto a vitrified zirconia thimble for an electrochemical-type exhaust gas oxygen sensor. Porous high surface area platinum films are deposited that have more consistent properties. A platinum target is spaced about 3.0-4.5 cm from the thimble and more than 6 cm from the sputtering anode. A pressure of about 10-20 millitorr is used during sputtering at a DC power of about 13-22 watts/cm.sup.2 of target area.
摘要翻译：将铂排气电极溅射到用于电化学型排气氧传感器的玻璃化氧化锆套管上的方法。沉积具有更一致性质的多孔高表面积铂膜。铂靶距离套管间隔约3.0-4.5厘米，距溅射阳极约6厘米。在溅射期间以约13-22瓦特/平方厘米的目标区域的DC功率使用约10-20毫托的压力。

3. 发明授权

US4253931A Electrode sputtering process for exhaust gas oxygen sensor 失效
标题翻译：废气氧传感器电极溅射工艺
公开(公告)号：US4253931A
公开(公告)日：1981-03-03
申请号：US98726
申请日：1979-11-30
申请人： Terry J. Gold , Kurt D. Humphrey , Keith A. Penney , Robert J. Smith , Randy L. Voto , Ralph V. Wilhelm, Jr.
发明人： Terry J. Gold , Kurt D. Humphrey , Keith A. Penney , Robert J. Smith , Randy L. Voto , Ralph V. Wilhelm, Jr.
IPC分类号： C03C17/09 , C23C14/18 , C23C14/35 , G01N27/407 , H01M8/12 , C23C15/00
CPC分类号： G01N27/407 , C03C17/09 , C23C14/185 , H01M4/9058
摘要： A method of sputtering platinum onto a vitrified zirconia thimble to form an exhaust electrode for an electrochemical-type exhaust gas oxygen sensor. The electrode is sputtered under an atmosphere consisting essentially of more than about 50% oxygen and/or nitrogen by volume. Sensors having low symmetrical transition times are produced.
摘要翻译：将铂溅射到玻璃化氧化锆套管上以形成用于电化学型排气氧传感器的排气电极的方法。电极在基本上由体积大于约50％的氧气和/或氮气组成的气氛下溅射。产生具有低对称转移时间的传感器。

4. 发明授权

US06454913B1 Process for deposition of sputtered shape memory alloy films 失效
标题翻译：溅射形状记忆合金膜沉积工艺
公开(公告)号：US06454913B1
公开(公告)日：2002-09-24
申请号：US09904072
申请日：2001-07-12
申请人： Gregory K. Rasmussen , Fenglian Chang , Terry J. Gold , Maryann G. Seibert , Jinping Zhang
发明人： Gregory K. Rasmussen , Fenglian Chang , Terry J. Gold , Maryann G. Seibert , Jinping Zhang
IPC分类号： C23C1434
CPC分类号： C22C27/00 , C22C30/00 , C22F1/006 , C23C14/165 , C23C14/3414
摘要： A process is provided for forming a thin film deposit of a Ni—Ti—Hf ternary shape memory alloy on a substrate by magnetron sputtering deposition having high transformation temperatures and good shape-memory and mechanical properties. The method of forming a thin film deposit of a ternary shape memory alloy on a substrate by sputtering deposition comprises arranging a Ni—Ti—Hf target and a substrate within a deposition chamber, maintaining a working distance from the target to the substrate of about 83 mm to 95 mm; heating the substrate to a temperature high enough to induce in-situ crystallization; introducing a krypton working gas into the deposition chamber; applying appropriate level of deposition power so that the deposition rate is from about 6 Å per second to about 120 Å per second; and, depositing a Ni—Ti—Hf shape memory alloy film having a composition ranging from about Ni48(TiHf)52 to Ni50(TiHf)50.
摘要翻译：提供了一种通过具有高转变温度和良好形状记忆和机械性能的磁控溅射沉积在基底上形成Ni-Ti-Hf三元形状记忆合金薄膜沉积的方法。通过溅射沉积在衬底上形成三元形状记忆合金的薄膜沉积的方法包括在沉积室内布置Ni-Ti-Hf靶和衬底，保持从靶到衬底的工作距离约为83 毫米至95毫米; 将基底加热到足够高的温度以引起原位结晶; 将氪工作气体引入沉积室; 施加适当水平的沉积功率，使得沉积速率为每秒约6埃至约120埃; 并且沉积具有约Ni48（TiHf）52至Ni50（TiHf）50的组成的Ni-Ti-Hf形状记忆合金膜。

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