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    • 5. 发明申请
    • Methods of forming conductive lines and methods of forming conductive contacts adjacent conductive lines
    • 形成导线的方法和在导电线附近形成导电接触的方法
    • US20060040465A1
    • 2006-02-23
    • US10925158
    • 2004-08-23
    • Scott SouthwickAlex SchrinskyTerrence McDaniel
    • Scott SouthwickAlex SchrinskyTerrence McDaniel
    • H01L21/76
    • H01L21/76885H01L21/76834H01L21/76897H01L27/10885
    • This invention includes methods of forming conductive lines, and methods of forming conductive contacts adjacent conductive lines. In one implementation, a method of forming a conductive line includes forming a conductive line within an elongated trench within first insulative material over a semiconductive substrate. The conductive line is laterally spaced from opposing first insulative material sidewall surfaces of the trench. The conductive line includes a second conductive material received over a different first conductive material. The second conductive material is recessed relative to an elevationally outer surface of the first insulative material proximate the trench. A second insulative material different from the first insulative material is formed within the trench over a top surface of the conductive line and within laterally opposing spaces received between the first insulative material and the conductive line. In one implementation, a conductive contact is formed adjacent to and insulated from the conductive line.
    • 本发明包括形成导线的方法,以及在导线附近形成导电触点的方法。 在一个实施方案中,形成导线的方法包括在第一绝缘材料内的细长沟槽内在半导体衬底上形成导电线。 导电线与沟槽的相对的第一绝缘材料侧壁表面横向隔开。 导电线包括接收在不同的第一导电材料上的第二导电材料。 第二导电材料相对于靠近沟槽的第一绝缘材料的正面外表面凹陷。 不同于第一绝缘材料的第二绝缘材料形成在导电线的顶表面之下的沟槽内并且在第一绝缘材料和导电线之间的横向相对的空间内。 在一个实施方案中,导电接触形成为与导电线相邻并与其绝缘。