专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011140200A1 GAS CLUSTER ION BEAM SYSTEM WITH RAPID GAS SWITCHING APPARATUS 审中-公开
标题翻译：具有快速气体切换装置的气体离子束系统
公开(公告)号：WO2011140200A1
公开(公告)日：2011-11-10
申请号：PCT/US2011/035158
申请日：2011-05-04
申请人： TEL EPION INC. , GRAF, Michael , BECKER, Robert, K. , REDDY, Christopher, T. , RUSSELL, Noel
发明人： GRAF, Michael , BECKER, Robert, K. , REDDY, Christopher, T. , RUSSELL, Noel
IPC分类号： H01J37/08 , H01J37/317
CPC分类号： H01J37/08 , H01J27/026 , H01J37/3171 , H01J2237/006 , H01J2237/0812
摘要： A processing system (100, 1 00', 1 00") is provided for irradiating a substrate (1 52, 252) with a gas cluster ion beam (GCIB) (128, 1 28A, 1 28A'). The system (100, 100', 100") includes a nozzle (1 10, 1010) for forming and emitting gas cluster beams through a nozzle outlet (1 1 0b), and a stagnation chamber (1 1 6, 101 6) that is located upstream of and adjacent the nozzle (1 10, 101 0). The stagnation chamber (1 16, 1016) has an inlet (1 16a, 1016a), and the nozzle (1 1 0, 1010) is configured to direct a single gas cluster beam toward the substrate (152, 252). An ionizer (1 22) is positioned downstream of the outlet (1 10b) and is configured to ionize the gas cluster beam (1 18) to form the GCIB (128, 128A, 128A'). The system (1 00, 100', 100") also includes a gas supply (1 1 5, 101 5) that is in fluid communication with the inlet (1 1 6a, 1016a) of the stagnation chamber (1 16, 1016), and which includes a gas source (1 1 1, 101 1 ) and a valve (1 1 3, 101 3) located between the gas source (1 1 1, 1 01 1 ) and the nozzle (1 10, 101 0) for controlling flow of a gas between the gas source (1 1 1, 101 1 ) and the nozzle (1 1 0, 1 010).
摘要翻译：提供一种处理系统（100,100'，100“），用于用气体簇离子束（GCIB）（128,128A，182A'）照射衬底（152,252），系统（100 ，100'，100“）包括用于通过喷嘴出口（110b）形成和发射气体束束的喷嘴（110,1010）和位于上游的停滞室（1166,106）并且邻近喷嘴（110,101 0）。停滞室（116,1616）具有入口（16a，1016a），并且喷嘴（11010）构造成将单个气体束束引向衬底（152,252）。离子发生器（122）位于出口（10b）的下游，并被配置为离子化气体束束（118）以形成GCIB（128,128A，128A'）。系统（100,100'，100“）还包括与停滞室（116,1616）的入口（11 6a，1016a）流体连通的气体供应源（115 1，101 5），其包括位于气体源（111,111）和喷嘴（110,101）之间的气体源（111,111）和阀（113 3 101）用于控制气体源（111,111）和喷嘴（11010）之间的气体流。

2. 发明申请

WO2009042443A1 METHOD TO IMPROVE ELECTRICAL LEAKAGE PEFORMANCE AND TO MINIMIZE ELECTROMIGRATION IN SEMICONDUCTOR DEVICES 审中-公开
标题翻译：改善电气泄漏方法和最小化半导体器件中电化学的方法
公开(公告)号：WO2009042443A1
公开(公告)日：2009-04-02
申请号：PCT/US2008/076498
申请日：2008-09-16
申请人： TEL EPION INC. , RUSSELL, Noel , SHERMAN, Steven , HAUTALA, John, J.
发明人： RUSSELL, Noel , SHERMAN, Steven , HAUTALA, John, J.
IPC分类号： H01L21/768
CPC分类号： H01L21/76849 , H01J2237/0812 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76867
摘要： Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein.
摘要翻译：这里通常描述了用于改善半导体器件中的漏电性能和最小化电迁移的方法的实施例。

3. 发明申请

WO2015077424A1 MULTI-STEP LOCATION SPECIFIC PROCESS FOR SUBSTRATE EDGE PROFILE CORRECTION FOR GCIB SYSTEM 审中-公开
标题翻译：用于GCIB系统的基板边缘轮廓校正的多步位置特定过程
公开(公告)号：WO2015077424A1
公开(公告)日：2015-05-28
申请号：PCT/US2014/066563
申请日：2014-11-20
申请人： TEL EPION INC.
发明人： YUE, Hongyu H. , RUSSELL, Noel , GIZZO, Vincent , LAROSE, Joshua , CALIENDO, Steven P.
IPC分类号： H01J37/08
CPC分类号： H01J37/20 , H01J37/305 , H01J37/3056 , H01J37/3171 , H01J2237/0812 , H01J2237/202 , H01J2237/30483
摘要： Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.
摘要翻译：公开了一种用于通过气体簇离子束（GCIB）或任何其它类型的离子束扫描衬底或其它工件的装置，系统和方法。工件扫描装置被配置为接收和保持用于GCIB照射的基板，并且通过两次运动通过GCIB在两个方向上进行扫描：往复式快速扫描运动和慢扫描运动。使用伺服电动机和皮带驱动系统来驱动缓慢扫描运动，所述皮带驱动系统被配置为降低工件扫描装置的故障率。

4. 发明申请

WO2010101688A1 ULTRA-THIN FILM FORMATION USING GAS CLUSTER ION BEAM PROCESSING 审中-公开
标题翻译：使用气体离子束加工的超薄膜形成
公开(公告)号：WO2010101688A1
公开(公告)日：2010-09-10
申请号：PCT/US2010/023014
申请日：2010-02-03
申请人： TEL EPION INC. , HAUTALA, John, J. , BURKE, Edmund , RUSSELL, Noel , HERDT, Gregory
发明人： HAUTALA, John, J. , BURKE, Edmund , RUSSELL, Noel , HERDT, Gregory
IPC分类号： C23C14/22 , H01L21/768
CPC分类号： C23C14/221 , H01L21/02112 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02227 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/31144 , H01L21/3148 , H01L21/31612 , H01L21/31662 , H01L21/318 , H01L21/3185 , H01L21/3212 , H01L21/76802 , H01L21/76807 , H01L21/76825 , H01L21/76829 , H01L21/76834 , H01L21/7684 , Y10S438/902
摘要： A method of preparing a thin film on a substrate (152, 252, 30') is described. The method comprises forming an ultra-thin hermetic film (40', 71, 622, 762, 812, 832) over a portion of a substrate (152, 252, 30') using a gas cluster ion beam (GCIB) (128), wherein the ultra-thin hermetic film (40', 71, 622, 762, 812, 832) has a thickness less than approximately 5 nm. The method further comprises providing a substrate (152, 252, 30') in a reduced-pressure environment, and generating a GCIB (128) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are selected to achieve a thickness of the thin film (40', 71, 622, 762, 812, 832) less than about 5 nanometers (nm). The GCIB (128) is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate (152, 252, 30') according to the beam dose. By doing so, the thin film (40', 71, 622, 762, 812, 832) is formed on the at least a portion of the substrate (152, 252, 30') to achieve the thickness desired.
摘要翻译：描述了在衬底（152,252,30'）上制备薄膜的方法。该方法包括使用气体簇离子束（GCIB）（128）在衬底（152,252,30'）的一部分上形成超薄密封膜（40'，71,622,762,812,832），其中所述超薄密封膜（40'，71,622,762,812,832）具有小于约5nm的厚度。该方法还包括在减压环境中提供衬底（152,252,30'），以及在减压环境中从加压气体混合物产生GCIB（128）。选择光束加速电位和光束剂量以获得小于约5纳米（nm）的薄膜（40'，71,622,762,812,832）的厚度。 GCIB（128）根据光束加速电位被加速，并且加速的GCIB根据光束剂量照射到衬底（152,252,30'）的至少一部分上。通过这样做，薄膜（40'，71,622,762,812,832）形成在衬底（152,252,30'）的至少一部分上，以实现所需的厚度。

5. 发明申请

WO2009045718A1 METHOD TO IMPROVE A COPPER/DIELECTRIC INTERFACE IN SEMICONDUCTOR DEVICES 审中-公开
标题翻译：在半导体器件中改进铜/介电界面的方法
公开(公告)号：WO2009045718A1
公开(公告)日：2009-04-09
申请号：PCT/US2008/076621
申请日：2008-09-17
申请人： TEL EPION INC. , RUSSELL, Noel , SHERMAN, Steven , HAUTALA, John, J.
发明人： RUSSELL, Noel , SHERMAN, Steven , HAUTALA, John, J.
IPC分类号： H01L21/768
CPC分类号： H01L21/76834 , H01J27/026 , H01J2237/0812 , H01L21/31051 , H01L21/3148 , H01L21/318 , H01L21/3185 , H01L21/76825
摘要： Embodiments of methods for improving a copper/dielectric interface (260) in semiconductor devices are generally described herein.
摘要翻译：这里通常描述用于改善半导体器件中的铜/电介质界面（260）的方法的实施例。

6. 发明公开

EP3189540A1 PROCESS GAS ENHANCEMENT FOR BEAM TREATMENT OF A SUBSTRATE 审中-公开
标题翻译：工艺气体增强用于基板的光束处理
公开(公告)号：EP3189540A1
公开(公告)日：2017-07-12
申请号：EP15837426.4
申请日：2015-09-01
申请人： Tel Epion Inc.
发明人： GRAF, Michael , RUSSELL, Noel , GWINN, Matthew C. , LEITH, Allen J.
IPC分类号： H01L21/205 , H01L21/265
CPC分类号： H01L21/3065 , H01J27/026 , H01J37/317 , H01J2237/006 , H01J2237/0812 , H01J2237/16 , H01J2237/31732 , H01J2237/3174 , H01L21/31116 , H01L21/32136
摘要： A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.
摘要翻译：描述了光束处理系统和操作方法。具体而言，束处理系统包括具有喷嘴组件的束源，该喷嘴组件被配置为将通过喷嘴组件的主气体引入真空容器以产生气体束如气体束束，并且可选地包括电离器，其定位在喷嘴组件的下游，并且被配置为使气体束电离以产生电离的气体束。该束处理系统还包括：处理室，在该处理室中，衬底被定位以用于由气体束处理;以及第二气体源，其中第二气体源包括输送第二气体的第二气体供给系统和第二气体控制器其可操作地控制喷射到喷嘴组件下游的射束处理系统中的二次气体的流动。

7. 发明申请

WO2017048971A1 METHOD FOR HIGH THROUGHPUT USING BEAM SCAN SIZE AND BEAM POSITION IN BEAM PROCESSING SYSTEM 审中-公开
标题翻译：光束加工系统中使用光束尺寸和光束位置的高通量的方法
公开(公告)号：WO2017048971A1
公开(公告)日：2017-03-23
申请号：PCT/US2016/051960
申请日：2016-09-15
申请人： TEL EPION INC.
发明人： CHAE, Soo Doo , RUSSELL, Noel , LAROSE, Joshua , JOY, Nicholas , FERNANDEZ, Luis , LEITH, Allen J. , CALIENDO, Steven P. , SHAO, Yan , LAGANA-GIZZO, Vincent
IPC分类号： H01J37/317 , H01L21/67
CPC分类号： H01L22/20 , G05B19/406 , G05B2219/40624 , G05B2219/45031 , H01J37/304 , H01J2237/30483 , H01J2237/31 , H01L22/12
摘要： A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectonic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.
摘要翻译：描述用于执行工件的位置特定处理的系统和方法。该方法包括将微电子工件放置在光束处理系统中，为小于微电子工件的尺寸的光束扫描图案选择光束扫描尺寸，产生处理光束，以及通过照射来处理微电子工件的目标区域沿着光束扫描图案的处理光束到被选择用于处理微电子工件的光束扫描尺寸内的目标区域上。

8. 发明申请

WO2016176569A1 METHOD OF SURFACE PROFILE CORRECTION USING GAS CLUSTER ION BEAM 审中-公开
标题翻译：使用气体束离子束的表面轮廓校正方法
公开(公告)号：WO2016176569A1
公开(公告)日：2016-11-03
申请号：PCT/US2016/030097
申请日：2016-04-29
申请人： TEL EPION INC.
发明人： RUSSELL, Noel , CHAE, Soo, Doo , LAGANA-GIZZO, Vincent , LAROSE, Joshua , JOY, Nicholas
IPC分类号： H01L21/3213 , H01L21/321 , H01L21/3105 , H01L21/28
CPC分类号： H01L22/20 , H01L21/28079 , H01L21/28088 , H01L21/31051 , H01L21/31055 , H01L21/31116 , H01L21/32115 , H01L21/32135 , H01L22/12
摘要： A method for correcting a surface profile (140) on a substrate (100) is described. In particular, the method includes receiving a substrate (100) having a heterogeneous layer (130) composed of a first material and a second material, wherein the heterogeneous layer (130) has an initial upper surface exposing the first material and the second material, and defining a first surface profile (140) across the substrate (100). The method further includes setting a target surface profile for the heterogeneous layer (130), selectively removing at least a portion of the first material using a gas cluster ion beam (GCIB) etching process, and recessing the first material beneath the second material, and thereafter, selectively removing at least a portion of the second material to achieve a final upper surface exposing the first material and the second material, and defining a second surface profile, wherein the second surface profile (150) is within a pre-determined tolerance of the target surface profile.
摘要翻译：描述了用于校正衬底（100）上的表面轮廓（140）的方法。特别地，该方法包括接收具有由第一材料和第二材料组成的非均质层（130）的基底（100），其中所述非均相层（130）具有暴露所述第一材料和所述第二材料的初始上表面，以及限定穿过所述衬底（100）的第一表面轮廓（140）。该方法还包括设置异质层（130）的目标表面轮廓，使用气体簇离子束（GCIB）蚀刻工艺选择性地去除第一材料的至少一部分，以及使第二材料下方的第一材料凹陷，以及此后，选择性地去除第二材料的至少一部分以实现露出第一材料和第二材料的最终上表面，并限定第二表面轮廓，其中第二表面轮廓（150）在预定的公差范围内目标表面轮廓。

9. 发明申请

WO2009117262A3 METHOD AND SYSTEM FOR DEPOSITING SILICON CARBIDE FILM USING A GAS CLUSTER ION BEAM 审中-公开
公开(公告)号：WO2009117262A3
公开(公告)日：2009-09-24
申请号：PCT/US2009/036275
申请日：2009-03-06
申请人： TEL EPION INC. , SHERMAN, Steven , HAUTALA, John, J. , RUSSELL, Noel , TABAT, Martin, D. , TETREAULT, Thomas, G.
发明人： SHERMAN, Steven , HAUTALA, John, J. , RUSSELL, Noel , TABAT, Martin, D. , TETREAULT, Thomas, G.
IPC分类号： C23C14/22 , C23C16/452 , C23C16/32 , C23C14/06
摘要： A method for depositing material on a substrate (152, 252) is described. The method comprises maintaining a reduced-pressure environment around a substrate holder (150, 250) for holding a substrate (152, 252) having a surface, and holding the substrate (152, 252) securely within the reduced-pressure environment. Additionally, the method comprises forming a gas cluster ion beam (GCIB) (128) from a pressurized gas comprising a compound having silicon (Si) and carbon (C), accelerating the GCIB (128) to the reduced-pressure environment, and irradiating the accelerated GCIB (128) onto at least a portion of the surface of the substrate (152, 252) to form a thin film containing silicon and carbon, wherein the carbon content is greater than or equal to about 10%. Further, the compound may possess a Si-C bond.

10. 发明申请

WO2017035030A1 HYBRID CORRECTIVE PROCESSING SYSTEM AND METHOD 审中-公开
标题翻译：混合校正处理系统和方法
公开(公告)号：WO2017035030A1
公开(公告)日：2017-03-02
申请号：PCT/US2016/047911
申请日：2016-08-19
申请人： TEL EPION INC.
发明人： LAROSE, Joshua , PFEIFER, Brian D. , LAGANA-GIZZO, Vincent , RUSSELL, Noel
IPC分类号： H01L21/66 , H01L21/265
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/32216 , H01J37/32009 , H01J37/3244 , H01J37/32935 , H01J37/3299 , H01J2237/334 , H01L21/3065 , H01L22/12 , Y02P90/22
摘要： A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.
摘要翻译：描述用于对工件进行校正处理的系统和方法。该系统和方法包括从第一源接收第一组参数数据，诊断上与微电子工件的至少第一部分相关，以及从不同于诊断相关的第一源的第二源接收第二组参数数据到微电子工件的至少第二部分。此后，生成校正处理，并且通过使用第一组参数数据和第二组参数数据的组合将校正过程应用于目标区域来处理微电子工件的目标区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式