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1. 发明授权

US4833256A Fluoran derivatives and recording material containing the same 失效
标题翻译：含氟衍生物和含有它们的记录材料
公开(公告)号：US4833256A
公开(公告)日：1989-05-23
申请号：US916686
申请日：1986-10-08
申请人： Teijiro Kitao , Tetsuhiko Yamaguchi , Katsumi Murofushi , Masato Futagami , Nobuyuki Nagato , Kunio Imamura
发明人： Teijiro Kitao , Tetsuhiko Yamaguchi , Katsumi Murofushi , Masato Futagami , Nobuyuki Nagato , Kunio Imamura
IPC分类号： B41M5/327 , C07D519/00
CPC分类号： C07D519/00 , B41M5/3275
摘要： A fluoran derivative useful for a heat-sensitive recording material, having the following general formula I; ##STR1## wherein R.sub.1 and R.sub.2, which may be the same or different, stand for an alkyl group having 1 to 9 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, a phenyl group or a phenyl group substituted by an alkyl group having 1 to 4 carbon atoms, and R.sub.3 and R.sub.4, which may be the same or different, stand for an alkyl group having 1 to 6 carbon atoms or a phenyl group or R.sub.3 and R.sub.4 may form a 5- to 8-membered cycloalkane together with the carbon atom to which they are bonded.
摘要翻译：用于热敏记录材料的荧烷衍生物，具有以下通式I; 其中R1和R2可以相同或不同，代表具有1至9个碳原子的烷基，具有3至6个碳原子的环烷基，苯基或苯基取代通过具有1至4个碳原子的烷基，可以相同或不同的R 3和R 4代表具有1至6个碳原子的烷基或苯基或R 3和R 4可以形成5-8 与其键合的碳原子一起形成环烷烃。

2. 发明授权

US08664414B2 Process for producing epoxy compound 失效
标题翻译：生产环氧化合物的方法
公开(公告)号：US08664414B2
公开(公告)日：2014-03-04
申请号：US13256863
申请日：2010-03-17
申请人： Nobuyuki Nagato , Hiroshi Uchida , Katsura Horikoshi , Mitsuhiro Imaizumi
发明人： Nobuyuki Nagato , Hiroshi Uchida , Katsura Horikoshi , Mitsuhiro Imaizumi
IPC分类号： C07D301/12
CPC分类号： C07D301/12 , C07D303/16 , C07D303/40 , C07D303/44
摘要： According to the present invention, a process for producing an epoxy compound, where an epoxy compound can be selectively produced from olefins with good yield at low cost in a safe manner by a simple operation under mild conditions without using a quaternary ammonium salt or a metal compound, is provided. The present invention relates to a process for producing an epoxy compound, comprising epoxidizing a carbon-carbon double bond of an organic compound having a carbon-carbon double bond by using hydrogen peroxide as an oxidant, wherein the epoxidation is carried by out using an organic nitrile compound and an organic amine compound.
摘要翻译：根据本发明，一种环氧化合物的制造方法，其中环氧化合物可以通过简单的操作在温和条件下以低成本以低成本以低成本选择性地由烯烃选择性地制备，而不使用季铵盐或金属化合物。环氧化合物的制造方法技术领域本发明涉及环氧化合物的制造方法，其特征在于，使用过氧化氢作为氧化剂，对具有碳 - 碳双键的有机化合物的碳 - 碳双键进行环氧化，其中所述环氧化是使用有机腈化合物和有机胺化合物。

3. 发明授权

US06755884B2 Niobium powder for capacitor, sintered body thereof and capacitor using the sintered body 有权
标题翻译：用于电容器的铌粉末，其烧结体和使用该烧结体的电容器
公开(公告)号：US06755884B2
公开(公告)日：2004-06-29
申请号：US10182205
申请日：2002-07-26
申请人： Kazumi Naito , Nobuyuki Nagato
发明人： Kazumi Naito , Nobuyuki Nagato
IPC分类号： B22F100
CPC分类号： H01G9/0525 , B22F2998/00 , C22C1/045 , C22C32/00 , C22C32/0031 , B22F1/0096
摘要： A niobium powder for capacitors, having an average particle size of from 10 to 500 &mgr;m, which is a granulated powder having an oxygen content of 3 to 9% by mass; a sintered body thereof; and a capacitor fabricated from the sintered body as one part electrode, a dielectric material formed on the surface of the sintered body, and another part electrode provided on the dielectric material. A capacitor manufactured from the sintered body of a niobium powder of the present invention is prevented from deterioration in the performance for a long period of time and has high reliability.
摘要翻译：一种电容器用铌粉，其平均粒径为10〜500μm，为氧含量为3〜9质量％的造粒粉末; 其烧结体; 以及由烧结体制成的电容器作为一部分电极，形成在烧结体表面上的电介质材料和设置在电介质材料上的另一部分电极。由本发明的铌粉末烧结体制成的电容器长时间不发生性能劣化，可靠性高。

4. 发明授权

US06660057B1 Powder composition for capacitor, sintered body using the composition and capacitor using the sintered body 有权
标题翻译：电容器用粉末组合物，使用该烧结体的组合物和电容器的烧结体
公开(公告)号：US06660057B1
公开(公告)日：2003-12-09
申请号：US09857109
申请日：2001-06-01
申请人： Kazumi Naito , Kazuhiro Omori , Nobuyuki Nagato
发明人： Kazumi Naito , Kazuhiro Omori , Nobuyuki Nagato
IPC分类号： B22F100
CPC分类号： H01G9/0525 , C22C32/0089 , C23C8/24
摘要： A powder composition for a capacitor comprising a tantalum or niobium and a compound having a silicon-oxygen bond, at least a part of which may be nitrided and which has an average particle size of from 0.1 to 5 &mgr;m; a sintered body using the composition; and a capacitor constituted by the sintered body as one part electrode, and another part electrode. A capacitor favored with high reliability, lower dissipation level of power and smaller deterioration of capacitance than conventional tantalum capacitors using tantalum can be produced by using a sintered body of the powder composition for a capacitor.
摘要翻译：一种用于电容器的粉末组合物，其包含钽或铌和具有硅 - 氧键的化合物，其至少一部分可被氮化并且其平均粒径为0.1至5μm; 使用该组合物的烧结体; 以及由烧结体构成为一部分电极的电容器和另一部分电极。通过使用用于电容器的粉末组合物的烧结体，可以制造出具有高可靠性，较低耗散功率和较小的电容劣化的电容器。

5. 发明授权

US06539932B2 Apparatus and method for cutting ingots 有权
标题翻译：切割锭的装置和方法
公开(公告)号：US06539932B2
公开(公告)日：2003-04-01
申请号：US09768795
申请日：2001-01-25
申请人： Hitoshi Ohmori , Masashi Shigeto , Nobuyuki Nagato
发明人： Hitoshi Ohmori , Masashi Shigeto , Nobuyuki Nagato
IPC分类号： B24B5307
CPC分类号： B28D5/0058 , B24B27/06 , B24B53/001 , B28D5/042 , Y10T83/687
摘要： A thin strip-shaped grindstone 12 is held flat under tension and moved backwards and forwards in the longitudinal direction, while the grindstone is moved in a direction perpendicular to a cylindrical ingot 1 and cuts the ingot. A metal-bonded grindstone is used as the strip-shaped grindstone 12, at least one pair of electrodes 23 are disposed adjacent to both surfaces of the metal-bonded grindstone one on each side of the ingot. The metal-bonded grindstone is made the positive electrode and DC voltage pulses are applied between the grindstone and the electrodes, and at the same time, a conducting processing fluid 25 is fed to the gaps between the metal-bonded grindstone and the electrodes, and both surfaces of the metal-bonded grindstone are dressed electrolytically on both sides while the cylindrical ingot is being cut by the metal-bonded grindstone. A large diameter, hard, refractory ingot can be efficiently cut with a small amount of cutting waste, warping and uneven thickness of the finished surface are reduced, roughness of the cut surface is small, little damage is given to the crystal during processing, running costs are low and there is a reduction in manpower requirements.
摘要翻译：薄的带状磨石12在张力下保持平坦，并在纵向方向上向前和向前移动，同时磨石沿垂直于圆柱形锭1的方向移动并切割锭。使用金属粘结磨石作为带状磨石12，至少一对电极23与铸锭的每一侧上的金属粘结磨石的两个表面相邻设置。将金属结合的砂轮制成正极，并且在磨石与电极之间施加直流电压脉冲，同时将导电加工流体25供给到金属粘结磨石与电极之间的间隙，金属粘结磨石的两个表面在两面被电解，而圆柱体被金属粘结的磨石切割。可以用少量的切割废料有效地切割大直径硬质耐火锭，缩短成品表面的翘曲和不均匀厚度，切割面的粗糙度小，加工过程中晶体损坏小，运行成本低，人力需求下降。

6. 发明授权

US07011692B2 Powder composition for capacitor, sintered body using the composition and capacitor using the sintered body 有权
公开(公告)号：US07011692B2
公开(公告)日：2006-03-14
申请号：US10682935
申请日：2003-10-14
申请人： Kazumi Naito , Kazuhiro Omori , Nobuyuki Nagato
发明人： Kazumi Naito , Kazuhiro Omori , Nobuyuki Nagato
IPC分类号： B22F1/00
CPC分类号： H01G9/0525 , C22C32/0089 , C23C8/24
摘要： A powder composition for a capacitor comprising a tantalum or niobium and a compound having a silicon-oxygen bond, at least a part of which may be nitrided and which has an average particle size of from 0.1 to 5 μm; a sintered body using the composition; and a capacitor constituted by the sintered body as one part electrode, and another part electrode. A capacitor favored with high reliability, lower dissipation level of power and smaller deterioration of capacitance than conventional tantalum capacitors using tantalum can be produced by using a sintered body of the powder composition for a capacitor.

7. 发明授权

US06663687B2 Niobium powder for capacitor, sintered body thereof and capacitor using the sintered body 有权
标题翻译：用于电容器的铌粉末，其烧结体和使用该烧结体的电容器
公开(公告)号：US06663687B2
公开(公告)日：2003-12-16
申请号：US10182140
申请日：2002-07-26
申请人： Kazumi Naito , Nobuyuki Nagato
发明人： Kazumi Naito , Nobuyuki Nagato
IPC分类号： C22C104
CPC分类号： H01G9/0525 , C04B35/495 , C04B2235/3253 , C04B2235/404 , C04B2235/5436 , C04B2235/5445 , C22C32/0031
摘要： A nobium powder for capacitors, which contains from 0.05 to 20% by mass of niobium monoxide crystal and from 0.05 to 20% by mass of hexaniobium monoxide crystal; a sintered body thereof; and a capacitor fabricated from the sintered body as one part electrode, a dielectric material formed on the surface of the sintered body, and another part provided on the dielectric material. A capacitor manufactured from a sintered body of a niobium powder of the present invention is favored with good high-temperature characteristics.
摘要翻译：一种电容器用铒粉，含有0.05〜20质量％的一氧化铌结晶和0.05〜20质量％的一氧化二铌结晶; 其烧结体; 以及由烧结体制成的电容器作为一部分电极，形成在烧结体表面上的电介质材料和设置在电介质材料上的另一部分。由本发明的铌粉末烧结体制成的电容器具有良好的高温特性。

8. 发明授权

US06514338B2 Method and apparatus for producing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法和装置
公开(公告)号：US06514338B2
公开(公告)日：2003-02-04
申请号：US09748387
申请日：2000-12-27
申请人： Masashi Shigeto , Kotaro Yano , Nobuyuki Nagato
发明人： Masashi Shigeto , Kotaro Yano , Nobuyuki Nagato
IPC分类号： C30B2300
CPC分类号： C30B23/02 , C30B23/00 , C30B25/00 , C30B29/36 , Y10T117/10
摘要： Silicon carbide single crystal is produced by allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows. Preferably, the silicon raw material is continuously fed onto the carbon raw material placed in a reaction crucible, and the carbon raw material is maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas. An apparatus used for producing the silicon carbide single crystal comprises a reaction crucible, and a seed crystal substrate disposed in the reaction crucible; and further comprises means for maintaining the carbon raw material placed in the reaction crucible at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas, and means for continuously feeding the silicon raw material onto the carbon raw material placed in the reaction crucible.
摘要翻译：通过使硅原料与碳原料连续反应而生成碳化硅单晶，生成气体，其到达碳化硅单晶生长的晶种基板。优选地，将硅原料连续地供给到放置在反应坩埚中的碳原料上，并且将碳原料保持在使得碳与熔融状态或气态的硅反应的温度，反应气体。用于制造碳化硅单晶的装置包括反应坩埚和设置在反应坩埚中的晶种衬底; 并且还包括用于将置于反应坩埚中的碳原料保持在使得碳与熔融状态或气态的硅反应以产生反应气体的温度的装置，以及用于连续供给硅原料的装置放置在反应坩埚中的碳原料上。

9. 发明授权

US06430026B1 Electrode material for capacitors and capacitor using the same 有权
标题翻译：电极材料用于电容器和电容器使用
公开(公告)号：US06430026B1
公开(公告)日：2002-08-06
申请号：US09590669
申请日：2000-06-09
申请人： Nobuyuki Nagato , Kazumi Naito
发明人： Nobuyuki Nagato , Kazumi Naito
IPC分类号： H01G4008
CPC分类号： H01G9/0032 , C25D11/26 , H01G9/042
摘要： The present invention provides an electrode material for capacitors, capable of ensuring a large capacitance per unit weight without worsening the leakage current property, and a capacitor using the material. The present invention also provides an electrode material for capacitors, obtained by reacting a tantalum metal and/or a niobium metal or an alloy thereof having an oxide film on the surface thereof with an alkali solution to form a tantalic acid compound and/or a niobic acid compound on the surface thereof. Furthermore, the present invention provides a capacitor using the electrode material.
摘要翻译：本发明提供一种用于电容器的电极材料，其能够确保每单位重量的大电容而不会使漏电流性能恶化，以及使用该材料的电容器。本发明还提供了一种用于电容器的电极材料，其通过使其表面上具有氧化膜的钽金属和/或铌金属或其合金与碱溶液反应而形成钽酸化合物和/或铌酸化合物的表面。此外，本发明提供一种使用电极材料的电容器。

10. 发明授权

US06406539B1 Process for producing silicon carbide single crystal and production apparatus therefor 有权
标题翻译：碳化硅单晶的制造方法及其制造装置
公开(公告)号：US06406539B1
公开(公告)日：2002-06-18
申请号：US09559550
申请日：2000-04-28
申请人： Masashi Shigeto , Kotaro Yano , Nobuyuki Nagato
发明人： Masashi Shigeto , Kotaro Yano , Nobuyuki Nagato
IPC分类号： C30B2306
CPC分类号： C30B23/00 , C30B23/002 , C30B29/36 , Y10T117/102
摘要： A process for producing a silicon carbide single crystal and a production apparatus therefor which enable, under stable conditions, continuous production of a silicon carbide single crystal which has a reduced density and dispersion of crystal defects in a growth direction, no lattice distortion, a large diameter, and constant quality. A melted or vaporized silicon material is introduced from the outside of a reaction system into a carbon material heated to a temperature equal to or higher than a temperature at which the silicon material vaporizes; and a reaction gas containing silicon gas and silicon carbide gas generated by a reaction between the carbon material and the silicon material is caused to reach a silicon carbide seed crystal substrate 5 which is held at a temperature lower than that of the carbon material, so that a silicon carbide single crystal grows on the silicon carbide seed crystal substrate.
摘要翻译：一种碳化硅单晶的制造方法及其制造装置，其能够在稳定的条件下连续生产在生长方向上晶体缺陷的密度和分散性降低的碳化硅单晶，无晶格畸变，大的直径和质量不变。将熔融或蒸发的硅材料从反应体系的外部引入加热到等于或高于硅材料蒸发的温度的温度的碳材料; 并且通过碳材料和硅材料之间的反应产生的含硅气体和碳化硅气体的反应气体到达保持在低于碳材料的温度的碳化硅晶种衬底5上，使得碳化硅单晶生长在碳化硅晶种衬底上。

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