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    • 5. 发明申请
    • Solid-state imaging device, method for driving dolid-state imaging device, imaging method, and imager
    • 固态成像装置,驱动立体成像装置的方法,成像方法和成像装置
    • US20050224842A1
    • 2005-10-13
    • US10517222
    • 2003-06-12
    • Takayuki Toyama
    • Takayuki Toyama
    • H01L27/148H01L29/768H04N5/335H04N5/341H04N5/363H04N5/369H04N5/3728H04N5/376H04N5/378
    • H01L29/76816H01L27/14831H04N5/335H04N5/3728H04N5/378
    • The present invention relates to a CCD solid state image sensor of a scanning read-out type and to a drive method thereof as well as an image pick-up method and the image pick-up device, particularly in which a plurality of vertical CCD columns can be assigned to one electric-charge detection unit with the small number of wiring. In the present invention, adjacent columns of the vertical CCDs are assigned to one electric-charge detection unit. Further, the stages of the voltage transfer between the vertical CCD column and a voltage detection unit is made different; the electrode arrangement is devised; or the drive timing is adjusted. Accordingly, the phase of electric-charge transfer with respect to the plurality of adjacent vertical CCD columns, when the horizontal electric-charge at the same position in the direction of the row obtained by the photo-conductive units is made to reach the electric-charge detection unit, becomes different.
    • 本发明涉及一种扫描读出型的CCD固态图像传感器及其驱动方法以及图像拾取方法和图像拾取装置,特别地,其中多个垂直CCD列 可以分配一个电量较小的一个电荷检测单元。 在本发明中,垂直CCD的相邻列分配给一个电荷检测单元。 此外,使垂直CCD列和电压检测单元之间的电压转移的阶段不同; 设计电极布置; 或者调整驱动定时。 因此,当使由导光单元获得的行的方向上的相同位置处的水平电荷达到电 - 电位时,相对于多个相邻的垂直CCD列的电荷转移的相位, 充电检测单元变得不同。
    • 6. 发明申请
    • Semiconductor device and process for production thereof
    • 半导体装置及其制造方法
    • US20050179054A1
    • 2005-08-18
    • US11103121
    • 2005-04-11
    • Takayuki Toyama
    • Takayuki Toyama
    • H01L21/285H01L21/335H01L29/778H01L31/0328
    • H01L29/66462H01L21/28593H01L29/7785
    • A semiconductor device which is capable of operating with a single positive power supply and has a low gate resistance, and a process for production thereof. The semiconductor device includes a channel layer (which constitutes a current channel), a first semiconductor layer formed on said channel layer, a second semiconductor layer in an island-like shape doped with a conductive impurity and formed on said first semiconductor layer, and a gate electrode formed on said second semiconductor layer, wherein said first and second semiconductor layers under said gate electrode have a conductive impurity region formed therein to control the threshold value of current flowing through said channel layer, and the conductive impurity region formed in second semiconductor layer is doped with a conductive impurity more heavily than in the conductive impurity region formed in said first semiconductor layer.
    • 能够使用单个正电源并具有低栅极电阻的半导体器件及其制造方法。 半导体器件包括沟道层(其构成电流沟道),形成在所述沟道层上的第一半导体层,在所述第一半导体层上形成有导电杂质的岛状形状的第二半导体层,以及 栅极形成在所述第二半导体层上,其中所述栅电极下方的所述第一和第二半导体层具有形成在其中的导电杂质区,以控制流过所述沟道层的电流的阈值,以及形成在第二半导体层中的导电杂质区 掺杂有比在所述第一半导体层中形成的导电杂质区域更重的导电杂质。
    • 8. 发明授权
    • Method of manufacturing a semiconductor device having a channel layer, a first semiconductor layer and a second semiconductor layer with a conductive impurity region
    • 制造具有沟道层的半导体器件的方法,第一半导体层以及具有导电杂质区的第二半导体层
    • US07141465B2
    • 2006-11-28
    • US10983784
    • 2004-11-08
    • Takayuki Toyama
    • Takayuki Toyama
    • H01L21/335
    • H01L29/66462H01L21/28593H01L29/7785
    • A semiconductor device which is capable of operating with a single positive power supply and has a low gate resistance, and a process for production thereof.The semiconductor device includes a channel layer (which constitutes a current channel), a first semiconductor layer formed on said channel layer, a second semiconductor layer in an island-like shape doped with a conductive impurity and formed on said first semiconductor layer, and a gate electrode formed on said second semiconductor layer, wherein said first and second semiconductor layers under said gate electrode have a conductive impurity region formed therein to control the threshold value of current flowing through said channel layer, and the conductive impurity region formed in second semiconductor layer is doped with a conductive impurity more heavily than in the conductive impurity region formed in said first semiconductor layer.
    • 能够使用单个正电源并具有低栅极电阻的半导体器件及其制造方法。 半导体器件包括沟道层(其构成电流沟道),形成在所述沟道层上的第一半导体层,在所述第一半导体层上形成有导电杂质的岛状形状的第二半导体层,以及 栅极形成在所述第二半导体层上,其中所述栅电极下方的所述第一和第二半导体层具有形成在其中的导电杂质区,以控制流过所述沟道层的电流的阈值,以及形成在第二半导体层中的导电杂质区 掺杂有比在所述第一半导体层中形成的导电杂质区域更重的导电杂质。