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1. 发明授权

US07203564B2 Treatment condition decision method, treatment condition decision system, treatment system, treatment condition decision calculator program, program recording medium, and semiconductor device manufacturing method 有权
标题翻译：治疗条件决定方法，治疗条件决定系统，治疗系统，治疗条件决定计算器程序，程序记录介质和半导体器件制造方法
公开(公告)号：US07203564B2
公开(公告)日：2007-04-10
申请号：US10924201
申请日：2004-08-24
申请人： Tatsuya Senga , Yoshijiro Ushio
发明人： Tatsuya Senga , Yoshijiro Ushio
IPC分类号： G06F19/00
CPC分类号： B24B37/042 , B24B49/00 , H01L21/31053 , H01L21/3212 , H01L21/76819 , H01L21/7684
摘要： In step S11, quantities that are varied (parameters) are respectively varied in a stepwise manner at a specified pitch, and standard working conditions consisting of combinations of these parameters are determined. For all of the standard working conditions, a working is actually performed, and the treated shapes that are obtained as a result are taken as the standard treated shapes for the respective standard working conditions (step S12). In cases where an appropriate simulation program is available, the standard treated shapes may be determined by simulation without actually performing a working. The standard working conditions and standard treated shapes thus determined are stored in a memory device. When the desired shape that is to be obtained by working is given in step S13, a standard treated shape that is close to the desired shape is sought in step S14. Thus, when a treated shape is given, the working conditions for this treated shape can be determined.
摘要翻译：在步骤S11中，变化量（参数）分别以指定的间距逐步地变化，并且确定由这些参数的组合组成的标准工作条件。对于所有标准工作条件，实际执行工作，并将作为结果获得的处理形状作为相应标准工作条件的标准处理形状（步骤S12）。在适当的仿真程序可用的情况下，标准处理的形状可以通过仿真来确定，而不实际执行工作。由此确定的标准工作条件和标准处理形状被存储在存储装置中。当在步骤S13中给出期望的通过加工获得的形状时，在步骤S14中寻求接近所需形状的标准处理形状。因此，当给出处理形状时，可以确定该处理形状的工作条件。

2. 发明申请

US20050176348A1 Treatment condition decision method, treatment condition decision system, treatment system, treatment condition decision calculator program, program recording medium, and semiconductor device manufacturing method 有权
标题翻译：治疗条件决定方法，治疗条件决定系统，治疗系统，治疗条件决定计算器程序，程序记录介质和半导体器件制造方法
公开(公告)号：US20050176348A1
公开(公告)日：2005-08-11
申请号：US10924201
申请日：2004-08-24
申请人： Tatsuya Senga , Yoshijiro Ushio
发明人： Tatsuya Senga , Yoshijiro Ushio
IPC分类号： B24B37/04 , B24B49/00 , H01L21/3105 , H01L21/321 , H01L21/768
CPC分类号： B24B37/042 , B24B49/00 , H01L21/31053 , H01L21/3212 , H01L21/76819 , H01L21/7684
摘要： In step S11, quantities that are varied (parameters) are respectively varied in a stepwise manner at a specified pitch, and standard working conditions consisting of combinations of these parameters are determined. For all of the standard working conditions, a working is actually performed, and the treated shapes that are obtained as a result are taken as the standard treated shapes for the respective standard working conditions (step S12). In cases where an appropriate simulation program is available, the standard treated shapes may be determined by simulation without actually performing a working. The standard working conditions and standard treated shapes thus determined are stored in a memory device. When the desired shape that is to be obtained by working is given in step S13, a standard treated shape that is close to the desired shape is sought in step S14. Thus, when a treated shape is given, the working conditions for this treated shape can be determined.
摘要翻译：在步骤S11中，分别以规定间距逐步地改变（参数）的量，并且确定由这些参数的组合组成的标准工作条件。对于所有标准工作条件，实际执行工作，并将作为结果获得的处理形状作为相应标准工作条件的标准处理形状（步骤S12）。在适当的仿真程序可用的情况下，标准处理的形状可以通过仿真来确定，而不实际执行工作。由此确定的标准工作条件和标准处理形状被存储在存储装置中。当在步骤S13中给出期望的通过加工获得的形状时，在步骤S14中寻求接近所需形状的标准处理形状。因此，当给出处理形状时，可以确定该处理形状的工作条件。

3. 发明授权

US06458014B1 Polishing body, polishing apparatus, polishing apparatus adjustment method, polished film thickness or polishing endpoint measurement method, and semiconductor device manufacturing method 失效
标题翻译：抛光体，抛光装置，抛光装置调整方法，抛光膜厚度或抛光终点测量方法以及半导体器件制造方法
公开(公告)号：US06458014B1
公开(公告)日：2002-10-01
申请号：US09846339
申请日：2001-05-02
申请人： Akira Ihsikawa , Tatsuya Senga , Akira Miyaji , Yoshijiro Ushio
发明人： Akira Ihsikawa , Tatsuya Senga , Akira Miyaji , Yoshijiro Ushio
IPC分类号： B24B4900
CPC分类号： B24B37/205 , B24B37/013 , B24B49/04 , B24B49/12
摘要： After a hole is formed in a polishing pad, a transparent window plate is inserted into the hole. Here, a gap is left between the upper surface of the transparent window plate and the outermost surface constituting the working surface of the polishing pad. During polishing, the polishing head holding the wafer applies a load to the polishing pad by means of a load-applying mechanism, so that the polishing pad and transparent window plate are compressed. In this case, the system is arranged so that the gap remains constant, and so that a dimension equal to or greater than a standard value is maintained. Since the upper surface of the transparent window plate is recessed from the upper surface of the polishing pad, there is no scratching of the surface of the transparent window plate during dressing. Accordingly, the polishing pad has a long useful life.
摘要翻译：在抛光垫中形成孔之后，将透明窗板插入孔中。这里，在透明窗板的上表面和构成抛光垫的工作面的最外表面之间留有间隙。在抛光期间，保持晶片的研磨头通过负载施加机构向抛光垫施加负载，使得抛光垫和透明窗板被压缩。在这种情况下，系统被布置成使得间隙保持恒定，并且维持等于或大于标准值的尺寸。由于透明窗板的上表面从抛光垫的上表面凹陷，因此在修整期间不会刮擦透明窗板的表面。因此，抛光垫的使用寿命长。

4. 发明授权

US08791989B2 Image processing apparatus, image processing method, recording method, and recording medium 有权
标题翻译：图像处理装置，图像处理方法，记录方法和记录介质
公开(公告)号：US08791989B2
公开(公告)日：2014-07-29
申请号：US13187497
申请日：2011-07-20
申请人： Yoshijiro Ushio , Yutaka Ichihara
发明人： Yoshijiro Ushio , Yutaka Ichihara
IPC分类号： H04N13/04 , G02B27/22
CPC分类号： H04N13/398 , G02B27/0172 , G02B27/22 , G02B2027/0134 , G02B2027/014 , G02B2027/0178 , H04N13/122 , H04N13/128 , H04N13/261 , H04N13/305 , H04N13/31 , H04N13/383
摘要： Provided is an image processing apparatus that stereoscopically displays a two-dimensional image, comprising a generating section that generates a left-side image and a right-side image by shifting the two-dimensional image left and right in a display region; a right-edge processing section that attaches a right-edge image, which is displayed within a prescribed range from a right edge of the display region, to a right side of the left-side image; a left-edge processing section that attaches a left-edge image, which is displayed within a prescribed range from a left edge of the display region, to a left side of the right-side image; and an output section that outputs the left-side image with the right-edge image attached thereto to a left eye of a user and outputs the right-side image with the left-edge image attached thereto to a right eye of the user.
摘要翻译：提供一种立体显示二维图像的图像处理装置，包括通过在显示区域中左右移动二维图像来生成左侧图像和右侧图像的生成部分; 右边缘处理部，将从显示区域的右边缘的规定范围内显示的右边缘图像附加到左侧图像的右侧; 左边缘处理部，其将从显示区域的左边缘在规定范围内显示的左边缘图像附加到右侧图像的左侧; 输出部分，其将附着有右边图像的左侧图像输出到用户的左眼，并将附着有左侧图像的右侧图像输出到用户的右眼。

5. 发明申请

US20110310097A1 IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, RECORDING METHOD, AND RECORDING MEDIUM 有权
标题翻译：图像处理装置，图像处理方法，记录方法和记录介质
公开(公告)号：US20110310097A1
公开(公告)日：2011-12-22
申请号：US13187493
申请日：2011-07-20
申请人： Yoshijiro Ushio , Yutaka Ichihara
发明人： Yoshijiro Ushio , Yutaka Ichihara
IPC分类号： G06T15/00
CPC分类号： H04N13/261 , G02B27/2221
摘要： Provided is an image processing apparatus that stereoscopically displays a two-dimensional image, comprising a generating section that generates a left-side image and a right-side image by shifting the two-dimensional image left and right in a display region; and an output section that outputs the left-side image to a left eye of the user and the right-side image to a right eye of the user. The generating section generates the left-side image and the right-side image by shifting the two-dimensional image to the left and right within the display region by a distance no greater than a distance between pupils of a user.
摘要翻译：提供一种立体显示二维图像的图像处理装置，包括通过在显示区域中左右移动二维图像来生成左侧图像和右侧图像的生成部分; 以及输出部，其向用户的左眼输出左侧图像，将右侧图像右眼图像输出到用户的右眼。生成部通过将二维图像在显示区域内左右移动距离不大于用户的瞳孔之间的距离来生成左侧图像和右侧图像。

6. 发明授权

US06271047B1 Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same 有权
公开(公告)号：US06271047B1
公开(公告)日：2001-08-07
申请号：US09316082
申请日：1999-05-20
申请人： Yoshijiro Ushio , Takehiko Ueda
发明人： Yoshijiro Ushio , Takehiko Ueda
IPC分类号： H01L2100
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0683 , H01L22/12 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process endpoint is reached. Layer thickness is detected based on a spectral-characteristic signal of reflected or transmitted signal light, obtained by directing a probe light onto the surface of the workpiece. Example spectral characteristics are local maxima and minima of signal-light waveform, differences or quotients of the same, a dispersion of the signal-light waveform, a component of a Fourier transform of the signal waveform, a cross-correlation function of the signal waveform. Alternatively, the zeroth order of signal light is selected for measurement, or a spatial coherence length of the probe light is compared with the degree of fineness of the pattern on the surface illuminated with the probe light. An optical model can be determined based on the comparison, and at least one of the layer thickness and the process endpoint is detected by comparing the measured signal-light intensity with the calculated theoretical signal light intensity.

7. 发明授权

US07108580B2 Method and device for simulation, method and device for polishing, method and device for preparing control parameters or control program, polishing system, recording medium, and method of manufacturing semiconductor device 有权
标题翻译：用于抛光的方法和装置，用于抛光的方法和装置，用于制备控制参数或控制程序的方法和装置，抛光系统，记录介质以及制造半导体装置的方法
公开(公告)号：US07108580B2
公开(公告)日：2006-09-19
申请号：US10774623
申请日：2004-02-10
申请人： Yoshijiro Ushio , Kiyoshi Iizuka
发明人： Yoshijiro Ushio , Kiyoshi Iizuka
IPC分类号： B24B51/00
CPC分类号： B24B51/00 , B24B57/02
摘要： The preparation apparatus 4 determines the target distribution of the amount of polishing on the basis of the film thickness of the wafer 2 measured by the measuring apparatus 3. The preparation apparatus 4 assumes a control program for the purpose of controlling the polishing apparatus 1, and predicts the distribution of the amount of polishing that is obtained after the wafer 2 is polished by the polishing apparatus 1 in accordance with the assumed control program. In this case, the amount of polishing in individual partial regions of the polished surface of the wafer 2 is predicted using an indicator that indicates the height distribution of the polishing surface of the polishing pad 14 (when no pressure is applied to this polishing pad) as one parameter. The preparation apparatus 4 judges the acceptability of the assumed control program by comparing the predicted distribution of the amount of polishing and the target distribution of the amount of polishing. The polishing apparatus 1 polishes the wafer 2 in accordance with a control program that has been judged to be acceptable. As a result, the desired film thickness distribution on the side of the polished surface of the object of polishing can be simulated with good precision.
摘要翻译：制备装置4基于由测量装置3测量的晶片2的膜厚确定抛光量的目标分布。制备装置4采用用于控制抛光装置1的控制程序，并且根据假设的控制程序预测抛光装置1抛光晶片2后获得的抛光量的分布。在这种情况下，使用表示研磨垫14的研磨面的高度分布的指示器（当对该研磨垫没有施加压力时）来预测晶片2的研磨面的各个部分区域的研磨量，作为一个参数。准备装置4通过比较抛光量的预测分布和抛光量的目标分布来判断假设控制程序的可接受性。抛光装置1根据已被判定为可接受的控制程序对晶片2进行抛光。结果，可以以高精度模拟抛光对象抛光表面一侧所需的膜厚分布。

8. 发明授权

US07052920B2 Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same 有权
标题翻译：用于晶片等的层厚度检测方法和装置以及包括其的研磨装置
公开(公告)号：US07052920B2
公开(公告)日：2006-05-30
申请号：US09881445
申请日：2001-06-13
申请人： Yoshijiro Ushio , Takehiko Ueda
发明人： Yoshijiro Ushio , Takehiko Ueda
IPC分类号： G01R31/26
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0683 , H01L22/12 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process endpoint is reached. Layer thickness is detected based on a spectral-characteristic signal of reflected or transmitted signal light, obtained by directing a probe light onto the surface of the workpiece. Example spectral characteristics are local maxima and minima of signal-light waveform, differences or quotients of the same, a dispersion of the signal-light waveform, a component of a Fourier transform of the signal waveform, a cross-correlation function of the signal waveform. Alternatively, the zeroth order of signal light is selected for measurement, or a spatial coherence length of the probe light is compared with the degree of fineness of the pattern on the surface illuminated with the probe light. An optical model can be determined based on the comparison, and at least one of the layer thickness and the process endpoint is detected by comparing the measured signal-light intensity with the calculated theoretical signal light intensity.
摘要翻译：公开了用于在平坦化层的过程期间检测工件（例如，半导体晶片）上的表面层（例如，金属或绝缘层）的厚度的方法和装置，以便当合适的过程端点为到达。基于通过将探测光引导到工件的表面而获得的反射或透射信号光的光谱特征信号来检测层厚度。示例光谱特征是信号光波形的局部最大值和最小值，差值或商数，信号光波形的色散，信号波形的傅立叶变换的分量，信号波形的互相关函数。或者，选择信号光的零级顺序进行测量，或者将探测光的空间相干长度与用探测光照射的表面上的图案的细度的程度进行比较。可以基于比较来确定光学模型，并且通过将测量的信号光强度与计算的理论信号光强度进行比较来检测层厚度和过程终点中的至少一个。

9. 发明授权

US06670200B2 Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same 有权
标题翻译：用于晶片等的层厚度检测方法和装置以及包括其的研磨装置
公开(公告)号：US06670200B2
公开(公告)日：2003-12-30
申请号：US09881224
申请日：2001-06-13
申请人： Yoshijiro Ushio , Takehiko Ueda
发明人： Yoshijiro Ushio , Takehiko Ueda
IPC分类号： H01L2100
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0683 , H01L22/12 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process endpoint is reached. Layer thickness is detected based on a spectral-characteristic signal of reflected or transmitted signal light, obtained by directing a probe light onto the surface of the workpiece. Example spectral characteristics are local maxima and minima of signal-light waveform, differences or quotients of the same, a dispersion of the signal-light waveform, a component of a Fourier transform of the signal waveform, a cross-correlation function of the signal waveform. Alternatively, the zeroth order of signal light is selected for measurement, or a spatial coherence length of the probe light is compared with the degree of fineness of the pattern on the surface illuminated with the probe light. An optical model can be determined based on the comparison, and at least one of the layer thickness and the process endpoint is detected by comparing the measured signal-light intensity with the calculated theoretical signal-light intensity.
摘要翻译：公开了用于在平坦化层的过程期间检测工件（例如，半导体晶片）上的表面层（例如，金属或绝缘层）的厚度的方法和装置，以便当合适的过程端点为到达。基于通过将探测光引导到工件的表面而获得的反射或透射信号光的光谱特征信号来检测层厚度。示例光谱特征是信号光波形的局部最大值和最小值，差值或商数，信号光波形的色散，信号波形的傅立叶变换的分量，信号波形的互相关函数。或者，选择信号光的零级顺序进行测量，或者将探测光的空间相干长度与用探测光照射的表面上的图案的细度的程度进行比较。可以基于比较来确定光学模型，并且通过将测量的信号光强度与计算的理论信号光强度进行比较来检测层厚度和处理终点中的至少一个。

10. 发明授权

US06679756B2 Method and apparatus for monitoring polishing state, polishing device, process wafer, semiconductor device, and method of manufacturing semiconductor device 有权
标题翻译：用于监测抛光状态的方法和装置，抛光装置，工艺晶片，半导体器件以及制造半导体器件的方法
公开(公告)号：US06679756B2
公开(公告)日：2004-01-20
申请号：US09914361
申请日：2001-08-27
申请人： Akira Ishikawa , Yoshijiro Ushio
发明人： Akira Ishikawa , Yoshijiro Ushio
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/12 , G01B11/06 , H01L21/30625 , H01L21/67253
摘要： Prior to the polishing of the wafer, a reflective body which has the same shape and dimensions as the wafer is held on the polishing head instead of the wafer. A polishing agent is interposed between the window of the polishing head and the reflective body, and the reflective body is pressed against the polishing pad with the same pressure as that applied during the polishing of the wafer. In this state, the reflective body is irradiated via the window with a probe light emitted from the light source, and the spectroscopic intensity of the reflected light is obtained from the sensor as a reference spectrum. During the polishing of the wafer, the spectroscopic intensity of the reflected light from the wafer is successively obtained as measured spectra from sensor; the intensity ratio of these measured spectra to the above-mentioned reference spectrum is determined, and the polishing state of the wafer is monitored on the basis of this intensity ratio.
摘要翻译：在抛光晶片之前，具有与晶片相同的形状和尺寸的反射体被保持在抛光头而不是晶片上。抛光剂插入在抛光头的窗口和反射体之间，并且反射体以与在晶片抛光期间施加的压力相同的压力压在抛光垫上。在该状态下，利用从光源射出的探测光经由窗口对反射体进行照射，从传感器得到反射光的分光强度作为参照光谱。在晶片的研磨过程中，从传感器测得的光谱依次获得来自晶片的反射光的光谱强度; 确定这些测量光谱与上述参考光谱的强度比，并且基于该强度比来监测晶片的抛光状态。

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