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1. 发明授权

US07892452B2 Nanocrystalline phosphor and coated nanocrystalline phosphor as well as method of preparing coated nanocrystalline phosphor 有权
标题翻译：纳米晶体磷光体和涂覆的纳米晶体荧光体以及制备涂层纳米晶体荧光体的方法
公开(公告)号：US07892452B2
公开(公告)日：2011-02-22
申请号：US11871333
申请日：2007-10-12
申请人： Tatsuya Ryowa , Hajime Saito
发明人： Tatsuya Ryowa , Hajime Saito
IPC分类号： C09K11/08 , C09K11/62
CPC分类号： C09K11/62 , C09K11/025 , C09K11/0883 , Y10S977/816 , Y10S977/817 , Y10S977/83 , Y10S977/834 , Y10T428/2991
摘要： Provided is a nanocrystalline phosphor having a core/shell structure formed by a core of a group 13 nitride semiconductor and a shell layer, covering the core, including a shell film of a group 13 nitride mixed crystal semiconductor. This nanocrystalline phosphor has high luminous efficiency, and is excellent in reliability. Also provided is a coated nanocrystalline phosphor prepared by bonding modified organic molecules to the nanocrystalline phosphor and/or coating the nanocrystalline phosphor with the modified organic molecules. This coated nanocrystalline phosphor has high dispersibility. Further provided is a method of preparing a coated nanocrystalline phosphor by heating a mixed solution containing a core of a group 13 nitride semiconductor, a nitrogen-containing compound, a group 13 element-containing compound and modified organic molecules.
摘要翻译：本发明提供一种纳米晶体荧光体，其具有由第13族氮化物半导体的核心和外壳层形成的芯/壳结构，覆盖该芯部，该壳体包括13族氮化物混晶半导体的壳膜。该纳米晶体荧光体的发光效率高，可靠性优异。还提供了通过将修饰的有机分子结合到纳米晶体荧光体和/或用修饰的有机分子涂覆纳米晶体磷光体制备的涂覆的纳米晶体荧光体。该涂覆的纳米晶体荧光体具有高分散性。进一步提供一种通过加热含有13族氮化物半导体的核心，含氮化合物，含13族元素化合物和改性有机分子的混合溶液来制备涂覆的纳米晶体荧光体的方法。

2. 发明申请

US20070194693A1 Light-Emitting Device 审中-公开
标题翻译：发光装置
公开(公告)号：US20070194693A1
公开(公告)日：2007-08-23
申请号：US10594249
申请日：2005-03-22
申请人： Hajime Saito , Mototaka Taneya , Takayuki Yuasa , Tatsuya Ryowa , Setsuhisa Tanabe , Yoichiu Kawakami , Shizuo Fujita , Mitsuru Funato
发明人： Hajime Saito , Mototaka Taneya , Takayuki Yuasa , Tatsuya Ryowa , Setsuhisa Tanabe , Yoichiu Kawakami , Shizuo Fujita , Mitsuru Funato
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： C09K11/7706 , C09K11/54 , C09K11/565 , C09K11/574 , C09K11/584 , C09K11/62 , C09K11/64 , C09K11/7734 , C09K11/7743 , C09K11/7789 , H01L33/44 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a light-emitting device comprising a semiconductor excitation light source emitting blue-violet light and a solid material illuminant having an absorbent for the blue-violet light containing samarium (Sm). With such a constitution, the light-emitting device has high efficiency, long life and excellent color rendering properties.
摘要翻译：公开了一种发光装置，其包括发射蓝紫色光的半导体激发光源和具有用于含有钐（Blue）的蓝紫色光的吸收剂的固体材料发光体。通过这样的结构，发光装置的效率高，寿命长，显色性优异。

3. 发明申请

US20120320607A1 WAVELENGTH CONVERSION MEMBER, LIGHT EMITTING DEVICE AND IMAGE DISPLAY DEVICE, AND METHOD FOR MANUFACTURING WAVELENGTH CONVERSION MEMBER 有权
标题翻译：波长转换构件，发光装置和图像显示装置，以及用于制造波长转换构件的方法
公开(公告)号：US20120320607A1
公开(公告)日：2012-12-20
申请号：US13582281
申请日：2011-02-25
申请人： Junichi Kinomoto , Tatsuya Ryowa
发明人： Junichi Kinomoto , Tatsuya Ryowa
IPC分类号： F21V9/16
CPC分类号： H01L27/322 , G02F1/133621 , G02F2001/133614 , G02F2202/102 , H01L33/504 , H01L33/505 , H01L2224/48091 , H01L2224/73265 , H01L2251/5369 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： Disclosed is a wavelength conversion member that is provided with: a light transmissive member including a light input plane into which excitation light is inputted, and a light output plane from which wavelength converted light is outputted; and a semiconductor fine particle phosphor, which is dispersed in the light transmissive member, and which absorbs the excitation light, converts the wavelength, and emits light. The dispersion concentration of the semiconductor fine particle phosphor in the direction parallel to the light traveling direction, i.e., the direction connecting the light input plane and the light output plane, is lower than the dispersion concentration of the semiconductor fine particle phosphor in the direction orthogonal to the light traveling direction.
摘要翻译：公开了一种波长转换部件，其设置有：透光部件，其包括输入激发光的光输入面和输出波长转换光的光输出面; 以及分散在透光构件中并吸收激发光的半导体微粒子荧光体，转换波长并发光。半导体细粒荧光体在与光行进方向平行的方向（即，连接光输入面和光输出面的方向）的分散浓度低于半导体细粒荧光体在正交方向上的分散浓度到光行进方向。

4. 发明授权

US08153022B2 Semiconductor phosphor nanoparticle 有权
标题翻译：半导体荧光体纳米粒子
公开(公告)号：US08153022B2
公开(公告)日：2012-04-10
申请号：US12834494
申请日：2010-07-12
申请人： Tatsuya Ryowa
发明人： Tatsuya Ryowa
IPC分类号： C09K11/06 , C09K11/08 , C09K11/02
CPC分类号： C09K11/02 , C09K11/62 , C09K11/623 , Y10S977/816 , Y10S977/83
摘要： A semiconductor phosphor nanoparticle including nanoparticle core made of a group 13-group 15 semiconductor; a shell layer coating the semiconductor nanoparticle core; and a metal-containing modified organic compound and a modified organic compound binding to a surface of the shell layer is disclosed.
摘要翻译：一种半导体荧光体纳米颗粒，包括由第13族半导体组成的纳米颗粒核心; 涂覆半导体纳米颗粒芯的壳层; 并且公开了含金属的改性有机化合物和与壳层的表面结合的改性有机化合物。

5. 发明授权

US07327770B2 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US07327770B2
公开(公告)日：2008-02-05
申请号：US10831687
申请日：2004-04-26
申请人： Tatsuya Ryowa , Masaya Ishida , Yukiko Morishita , Takeshi Kamikawa , Kensaku Motoki
发明人： Tatsuya Ryowa , Masaya Ishida , Yukiko Morishita , Takeshi Kamikawa , Kensaku Motoki
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01L2224/45144 , H01L2224/48463 , H01L2224/73265 , H01S5/0218 , H01S5/02276 , H01S5/0421 , H01S5/0425 , H01S5/2206 , H01S5/2231 , H01S5/34333 , H01S2301/173 , H01S2304/00 , H01S2304/12 , H01L2924/00
摘要： To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the position at which a wire (301) is bonded to an electrode (113) formed on the top surface of a semiconductor layered structure is located off the area right above a dislocation (crystal defect)-concentrated region (X) of the substrate. Concentration of dislocations in the substrate spreads to the layered structure, producing a dislocation-concentrated region in the part of the layered structure located right above the dislocation-concentrated region of the substrate. If a wire is bonded above this region, the pressure applied when the wire is bonded causes the metal of which the electrode is made to diffuse along the concentrated dislocations, lowering the quality of the layered structure and thus resulting in deterioration of the element. Bonding a wire elsewhere than above the dislocation-concentrated region (X) helps prevent such deterioration.
摘要翻译：为了防止在包含氮化物半导体衬底上的具有氮化物半导体的半导体激光元件的激光器件中导线引起的劣化，导线（301）与形成在顶部上的电极（113）接合的位置半导体层叠结构的表面位于基板的位错（晶体缺陷） - 集中区域（X）正上方的区域的外侧。底物中的位错浓度扩散到层状结构，在位于基底的位错集中区域正上方的层状结构部分中产生位错集中区域。如果在该区域上接合线，则在导线接合时施加的压力使得电极的金属沿着浓集的位错扩散，降低了层状结构的质量，从而导致元件的劣化。将电线连接到位于位错集中区域（X）以上的电线有助于防止这种变质。

6. 发明授权

US08882299B2 Wavelength conversion member, light emitting device and image display device, and method for manufacturing wavelength conversion member 有权
标题翻译：波长转换构件，发光装置和图像显示装置以及波长转换构件的制造方法
公开(公告)号：US08882299B2
公开(公告)日：2014-11-11
申请号：US13582281
申请日：2011-02-25
申请人： Junichi Kinomoto , Tatsuya Ryowa
发明人： Junichi Kinomoto , Tatsuya Ryowa
IPC分类号： F21V9/00 , H01L27/32 , H01L33/50 , G02F1/1335
CPC分类号： H01L27/322 , G02F1/133621 , G02F2001/133614 , G02F2202/102 , H01L33/504 , H01L33/505 , H01L2224/48091 , H01L2224/73265 , H01L2251/5369 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： Disclosed is a wavelength conversion member that is provided with: a light transmissive member including a light input plane into which excitation light is inputted, and a light output plane from which wavelength converted light is outputted; and a semiconductor fine particle phosphor, which is dispersed in the light transmissive member, and which absorbs the excitation light, converts the wavelength, and emits light. The dispersion concentration of the semiconductor fine particle phosphor in the direction parallel to the light traveling direction, i.e., the direction connecting the light input plane and the light output plane, is lower than the dispersion concentration of the semiconductor fine particle phosphor in the direction orthogonal to the light traveling direction.
摘要翻译：公开了一种波长转换部件，其设置有：透光部件，其包括输入激发光的光输入面和输出波长转换光的光输出面; 以及分散在透光构件中并吸收激发光的半导体微粒子荧光体，转换波长并发光。半导体细粒荧光体在与光行进方向平行的方向（即，连接光输入面和光输出面的方向）的分散浓度低于半导体细粒荧光体在正交方向上的分散浓度到光行进方向。

7. 发明授权

US08123979B2 Group 13 nitride phosphor and method of preparing the same 有权
标题翻译： 13族氮化物荧光粉及其制备方法
公开(公告)号：US08123979B2
公开(公告)日：2012-02-28
申请号：US12120613
申请日：2008-05-14
申请人： Tatsuya Ryowa , Hajime Saito
发明人： Tatsuya Ryowa , Hajime Saito
IPC分类号： C09K11/06 , C09K11/02
CPC分类号： C09K11/62 , C09K11/02 , C09K11/0883
摘要： Provided are a group 13 nitride phosphor having high luminous intensity and excellent reliability obtained by preparing group 13 nitride crystallites homogeneously dispersible in a solid matrix by capping surface defects and homogeneously dispersing the group 13 nitride crystallites in the solid matrix and an efficient method of preparing the same. The present invention relates to a group 13 nitride phosphor consisting of group 13 nitride crystallites having a group 13 element dispersed in a matrix of a silica gel solid layer, with a diamine compound bonded to the surfaces of the group 13 nitride crystallites and the silica gel solid layer, and a method of preparing the same.
摘要翻译：提供一种具有高发光强度和高可靠性的13族氮化物荧光体，其通过将表面缺陷加以限制并均匀地分散在固体基质中的第13族氮化物微晶而制备13族氮化物微晶，从而均匀地分散在固体基体中，相同。本发明涉及一种由具有分散在硅胶固体层的基体中的13族元素的13族氮化物微晶组成的13族氮化物荧光体，与该第13族氮化物微晶和硅胶的表面结合的二胺化合物固体层及其制备方法。

8. 发明申请

US20100163798A1 SEMICONDUCTOR NANOPARTICLE PHOSPHOR INCLUDING NANOPARTICLE CORE COMPOSED OF GROUP-XIII AND -XV SEMICONDUCTOR AND FIRST SHELL AND SECOND SHELL FOR COATING THE SAME 审中-公开
标题翻译：半导体纳米晶体包括由组XIII和-XV半导体和第一壳体组成的纳米核心和用于涂覆其的第二壳体
公开(公告)号：US20100163798A1
公开(公告)日：2010-07-01
申请号：US12624095
申请日：2009-11-23
申请人： Tatsuya Ryowa , Junichi Kinomoto
发明人： Tatsuya Ryowa , Junichi Kinomoto
IPC分类号： C09K11/62
CPC分类号： C09K11/565 , C09K11/02 , C09K11/025 , C09K11/0883 , C09K11/62
摘要： A semiconductor nanoparticle phosphor includes a nanoparticle core composed of a group-XIII and -XV semiconductor, a first shell for coating the nanoparticle core, and a second shell for coating the first shell, a difference in a lattice constant between the nanoparticle core and the second shell being smaller than a difference in the lattice constant between the nanoparticle core and the first shell, or the first shell being smaller in the lattice constant than the nanoparticle core and the second shell being greater in the lattice constant than the nanoparticle core, or the first shell being greater in the lattice constant than the nanoparticle core and the second shell being smaller in the lattice constant than the nanoparticle core.
摘要翻译：半导体纳米颗粒磷光体包括由-XIII和-XV族基团组成的纳米颗粒芯，用于涂覆纳米颗粒芯的第一壳和用于涂覆第一壳的第二壳，纳米颗粒核与第二壳小于纳米颗粒芯和第一壳之间的晶格常数的差异，或第一壳的晶格常数小于纳米颗粒芯，第二壳的晶格常数大于纳米颗粒芯，或第一壳体的晶格常数大于纳米颗粒核心，第二壳体的晶格常数小于纳米颗粒核心。

9. 发明申请

US20050025205A1 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US20050025205A1
公开(公告)日：2005-02-03
申请号：US10831687
申请日：2004-04-26
申请人： Tatsuya Ryowa , Masaya Ishida , Yukiko Morishita , Takeshi Kamikawa , Kensaku Motoki
发明人： Tatsuya Ryowa , Masaya Ishida , Yukiko Morishita , Takeshi Kamikawa , Kensaku Motoki
IPC分类号： H01L21/205 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01L2224/45144 , H01L2224/48463 , H01L2224/73265 , H01S5/0218 , H01S5/02276 , H01S5/0421 , H01S5/0425 , H01S5/2206 , H01S5/2231 , H01S5/34333 , H01S2301/173 , H01S2304/00 , H01S2304/12 , H01L2924/00
摘要： To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the position at which a wire (301) is bonded to an electrode (113) formed on the top surface of a semiconductor layered structure is located off the area right above a dislocation (crystal defect)-concentrated region (X) of the substrate. Concentration of dislocations in the substrate spreads to the layered structure, producing a dislocation-concentrated region in the part of the layered structure located right above the dislocation-concentrated region of the substrate. If a wire is bonded above this region, the pressure applied when the wire is bonded causes the metal of which the electrode is made to diffuse along the concentrated dislocations, lowering the quality of the layered structure and thus resulting in deterioration of the element. Bonding a wire elsewhere than above the dislocation-concentrated region (X) helps prevent such deterioration.
摘要翻译：为了防止在包含氮化物半导体衬底上的具有氮化物半导体的半导体激光元件的激光器件中导线引起的劣化，导线（301）与形成在顶部上的电极（113）接合的位置半导体层叠结构的表面位于基板的位错（晶体缺陷） - 集中区域（X）正上方的区域的外侧。底物中的位错浓度扩散到层状结构，在位于基底的位错集中区域正上方的层状结构部分中产生位错集中区域。如果在该区域上接合线，则在导线接合时施加的压力使得电极的金属沿着浓集的位错扩散，降低了层状结构的质量，从而导致元件的劣化。将电线连接到位于位错集中区域（X）以上的电线有助于防止这种变质。

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