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1. 发明申请

US20050252451A1 Cvd apparatus having means for cleaning with fluorine gas and method of cleaning cvd apparatus with fluorine gas 审中-公开
标题翻译：具有用氟气清洗的装置的Cvd装置以及用氟气清洗cvd装置的方法
公开(公告)号：US20050252451A1
公开(公告)日：2005-11-17
申请号：US10490217
申请日：2003-03-13
申请人： Tatsuro Beppu , Katsuo Sakai , Seiji Okura , Masaji Sakamura , Kaoru Abe , Hitoshi Murata , Etsuo Wani , Kenji Kameda , Yuki Mitsui , Yutaka Ohira , Taisuke Yonemura , Akira Sekiya
发明人： Tatsuro Beppu , Katsuo Sakai , Seiji Okura , Masaji Sakamura , Kaoru Abe , Hitoshi Murata , Etsuo Wani , Kenji Kameda , Yuki Mitsui , Yutaka Ohira , Taisuke Yonemura , Akira Sekiya
IPC分类号： B08B7/00 , C23C16/44 , H01J37/32 , H01L21/3065 , H01L21/31 , C23C16/00
CPC分类号： B08B7/0035 , C23C16/4405 , H01J37/32357 , H01J37/32862 , Y02C20/30 , Y02P70/605
摘要： It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step. Furthermore, it is an object to provide a cleaning method in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced. An energy is applied to a fluorine compound to react the fluorine compound, thereby generating a fluorine gas component and a component other than the fluorine gas component. Furthermore, the fluorine gas component and the component other than the fluorine gas component which are generated are separated from each other so that the fluorine gas component is separated and refined. After a film forming process for a base material is carried out by a CVD apparatus, a separated and refined fluorine gas is then converted to a plasma to remove a by-product adhered into the reaction chamber.
摘要翻译：本发明的目的是提供一种能够有效地除去SiO 2或Si 3 N 4 N 2的副产物的CVD装置中的清洗方法。 >，其在膜形成步骤中在反应室中粘附并沉积在内壁，电极等的表面上。此外，其目的在于提供一种清理方法，其中排出的清洁气体的量非常小，对全球变暖等环境的影响也减少，成本也降低。向氟化合物施加能量以使氟化合物反应，从而产生氟气成分和氟气成分以外的成分。此外，氟气成分和除了产生的氟气成分以外的成分彼此分离，使氟气成分分离精制。在通过CVD装置进行基材的成膜处理之后，将分离精制的氟气转化为等离子体，除去附着在反应室中的副产物。

2. 发明授权

US08277560B2 CVD apparatus and method of cleaning the CVD apparatus 有权
标题翻译： CVD装置和清洁CVD装置的方法
公开(公告)号：US08277560B2
公开(公告)日：2012-10-02
申请号：US10492539
申请日：2003-03-19
申请人： Katsuo Sakai , Seiji Okura , Masaji Sakamura , Kaoru Abe , Hitoshi Murata , Etsuo Wani , Kenji Kameda , Yuki Mitsui , Yutaka Ohira , Taisuke Yonemura , Akira Sekiya
发明人： Katsuo Sakai , Seiji Okura , Masaji Sakamura , Kaoru Abe , Hitoshi Murata , Etsuo Wani , Kenji Kameda , Yuki Mitsui , Yutaka Ohira , Taisuke Yonemura , Akira Sekiya
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： C23C16/45593 , C23C16/4405 , C23C16/4412 , H01L21/02046 , Y02C20/30 , Y02P70/605
摘要： A CVD apparatus cleaning method that efficiently removes by-product such as SiO2 or Si3N4 adhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.
摘要翻译：一种CVD装置清洗方法，其在成膜步骤中有效地除去在反应室内附着和沉积在内壁，电极等的表面上的副产物如SiO 2或Si 3 N 4。在清洁方法中，排出的清洁气体量非常小，可以减少诸如全球变暖的环境影响，并且可以降低成本。将反应气体供应到反应室中并在设置在反应室中的基材的表面上形成沉积膜的CVD装置包括排气回收路径，从排气路径上的泵下游到达反应室的废气再循环用于从反应室的内部通过泵排出气体。

3. 发明申请

US20060207630A1 Device for cleaning cvd device and method of cleaning cvd device 有权
标题翻译： cvd设备的清洁设备和清洁cvd设备的方法
公开(公告)号：US20060207630A1
公开(公告)日：2006-09-21
申请号：US10548874
申请日：2004-03-12
申请人： Katsuo Sakai , Kaoru Abe , Seiji Okura , Masaji Sakamura , Hitoshi Murata , Kenji Kameda , Etsuo Wani , Akira Sekiya
发明人： Katsuo Sakai , Kaoru Abe , Seiji Okura , Masaji Sakamura , Hitoshi Murata , Kenji Kameda , Etsuo Wani , Akira Sekiya
IPC分类号： B08B6/00 , B08B9/00 , C23F1/00 , B05C11/00 , C23C16/00
CPC分类号： C23C16/52 , C23C16/4405
摘要： An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO2 or Si3N4 stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF4 in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF4 to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.
摘要翻译：一种用于清洁可以有效地除去诸如SiO 2或Si 3 N 4 N 3的副产物的CVD装置的装置，其被粘附并沉积到在成膜工艺中的反应室中的内壁，电极等的表面，以及CVD装置的清洗方法。控制器通过光发射光谱监测反应室中F自由基的发光强度数据，并将该数据与校准的预存的发光强度数据进行比较，并且在经过预定时间从达到发光强度饱和点之后结束清洁。此外，通过傅里叶变换红外光谱法监测从反应室排出的气体中SiF 4的浓度数据，并与SiF 4的预先存储的浓度数据进行比较，以确定当达到预定的清洁终点浓度时已经过了预定的时间，从而结束清洁。

4. 发明授权

US08043438B2 Device for cleaning CVD device and method of cleaning CVD device 有权
标题翻译： CVD装置的清洗装置及清洗CVD装置的方法
公开(公告)号：US08043438B2
公开(公告)日：2011-10-25
申请号：US10548874
申请日：2004-03-12
申请人： Katsuo Sakai , Kaoru Abe , Seiji Okura , Masaji Sakamura , Hitoshi Murata , Kenji Kameda , Etsuo Wani , Akira Sekiya
发明人： Katsuo Sakai , Kaoru Abe , Seiji Okura , Masaji Sakamura , Hitoshi Murata , Kenji Kameda , Etsuo Wani , Akira Sekiya
IPC分类号： B08B9/00
CPC分类号： C23C16/52 , C23C16/4405
摘要： An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO2 or Si3N4 stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF4 in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF4 to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.
摘要翻译：一种用于清洁CVD装置的装置，其可以有效地除去在成膜过程中在反应室中粘附并沉积到反应室内的表面上的诸如SiO 2或Si 3 N 4的副产物，以及方法用于清洁CVD装置。控制器通过光发射光谱监测反应室中F自由基的发光强度数据，并将该数据与校准的预存的发光强度数据进行比较，并且在经过预定时间从达到发光强度饱和点之后结束清洁。此外，通过傅里叶变换红外光谱法监测从反应室排出的气体中SiF 4的浓度数据，并与SiF 4的预先存储的浓度数据进行比较，以确定在达到预定清洗终点浓度时经过了预定时间，从而结束清洁。

5. 发明申请

US20060201533A1 Cvd apparatus and method for cleaning cvd apparatus 审中-公开
标题翻译： Cvd设备和清洁cvd设备的方法
公开(公告)号：US20060201533A1
公开(公告)日：2006-09-14
申请号：US10548873
申请日：2004-03-12
申请人： Etsuo Wani , Katsuo Sakai , Seiji Okura , Masaji Sakamura , Kaoru Abe , Hitoshi Murata , Kenji Kameda
发明人： Etsuo Wani , Katsuo Sakai , Seiji Okura , Masaji Sakamura , Kaoru Abe , Hitoshi Murata , Kenji Kameda
IPC分类号： B08B6/00 , B08B9/00 , C23C16/00 , B05C11/00
CPC分类号： H01J37/32862 , C23C16/4405 , H01J37/32082
摘要： There is provided a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is stuck and deposited onto the surface of an internal wall, an electrode or the like in a CVD chamber in a film forming process, and furthermore, executing cleaning having a small damage over an upper electrode and a counter electrode stage (a lower electrode) and manufacturing a thin film of high quality, and a CVD apparatus cleaning method using the same. In a CVD apparatus cleaning method of introducing a cleaning gas to carry out plasma cleaning over an inside of a CVD chamber after forming a deposited film on a surface of a substrate, a frequency of an RF to be applied to an RF electrode is switched into a first frequency to be applied for forming a film and a second frequency to be applied when executing the plasma cleaning.
摘要翻译：提供了一种CVD装置，其能够有效地除去被粘附并沉积到其上的副产物如SiO 2或Si 3 N 4 N 4 在成膜工艺中在CVD室中的内壁，电极等的表面，此外，执行在上电极和对电极台（下电极）上具有小损伤的清洁并制造薄膜的高质量的CVD装置清洗方法。在CVD基板的表面形成沉积膜之后，在CVD装置的清洗方法中，在CVD室内引入清洗气体进行等离子体清洗，将施加到RF电极的RF的频率切换成用于形成膜的第一频率和在执行等离子体清洗时要施加的第二频率。

6. 发明授权

US06935351B2 Method of cleaning CVD device and cleaning device therefor 有权
标题翻译：清洁CVD装置及其清洁装置的方法
公开(公告)号：US06935351B2
公开(公告)日：2005-08-30
申请号：US10276305
申请日：2002-03-18
申请人： Koji Shibata , Naoto Tsuji , Hitoshi Murata , Etsuo Wani , Yoshihide Kosano
发明人： Koji Shibata , Naoto Tsuji , Hitoshi Murata , Etsuo Wani , Yoshihide Kosano
IPC分类号： H05H1/46 , B01J19/08 , C23C16/44 , H01L21/302 , H01L21/3065 , H01L21/31 , B08B9/00
CPC分类号： C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A cleaning method for CVD apparatus wherein by-products such as SiO2 and Si3N4 adhered to and deposited on surfaces of the inner wall, electrodes and other parts of a reaction chamber at the stage of film formation can be removed efficiently. Furthermore, the amount of cleaning gas discharged is so small that the influence on environment such as global warming is little and cost reduction can be also attained. After the film formation on a base material surface by the use of CVD apparatus, a fluorinated cleaning gas containing a fluorcompound is converted to plasma by means of a remote plasma generator, and the cleaning gas having been converted to plasma is introduced into a reaction chamber so that any by-products adhered to inner parts of the reaction chamber is removed.
摘要翻译：一种用于CVD装置的清洁方法，其中诸如SiO 2和Si 3 N 4 N 3的副产物粘附并沉积在内壁的表面上，可以有效地去除成膜阶段的反应室的电极和其它部分。此外，排出的清洁气体的量很小，从而对全球变暖等对环境的影响很小，也可以降低成本。在通过使用CVD装置在基材表面上形成膜之后，通过远程等离子体发生器将含有氟化合物的氟化清洗气体转化为等离子体，将已经转化为等离子体的清洗气体引入反应室从而除去附着在反应室内部的副产物。

7. 发明授权

US09460946B2 Substrate processing apparatus and heating equipment 有权
标题翻译：基板加工设备和加热设备
公开(公告)号：US09460946B2
公开(公告)日：2016-10-04
申请号：US13177306
申请日：2011-07-06
申请人： Hitoshi Murata , Tetsuya Kosugi
发明人： Hitoshi Murata , Tetsuya Kosugi
IPC分类号： F24F7/00 , H01L21/67 , C23C16/46
CPC分类号： H01L21/67109 , C23C16/46 , C23C16/463
摘要： A substrate processing apparatus includes a heating part including a cylindrical-shaped heat insulator and a heating wire arranged on the inner circumferential surface of the heat insulator, a heat-insulating part configured to define a cylindrical space between the heating part and the heat insulating part, a cooling gas introduction portion coupled to the cylindrical space and provided above the heat-insulating part to surround the heating part, and a cooling gas discharge portion provided at an approximately same height as that of the cooling gas introduction portion in the diameter direction extending from approximately the center of the cooling gas introduction portion.
摘要翻译：一种基板处理装置，包括：加热部，其包括圆筒状的隔热体和配置在隔热材料的内周面上的加热丝;隔热部，被配置为在加热部和绝热部之间限定圆筒状的空间连接到所述圆筒形空间并设置在所述绝热部分上方以围绕所述加热部的冷却气体导入部，以及设置在与所述冷却气体导入部的直径方向延伸大致相同的高度的冷却气体排出部从大致冷却气体导入部的中心开始。

8. 发明授权

US08535444B2 Substrate processing apparatus, method of manufacturing semiconductor device, and ceiling insulating part 有权
标题翻译：基板处理装置，半导体装置的制造方法以及顶棚绝缘部
公开(公告)号：US08535444B2
公开(公告)日：2013-09-17
申请号：US12367751
申请日：2009-02-09
申请人： Hitoshi Murata , Tetsuya Kosugi , Shinobu Sugiura
发明人： Hitoshi Murata , Tetsuya Kosugi , Shinobu Sugiura
IPC分类号： C23C16/00
CPC分类号： C23C16/4583 , C23C16/44 , F27B17/0025 , H01L21/67109 , Y10T428/24479
摘要： Provided is a substrate processing apparatus. The substrate processing apparatus comprises a reaction vessel configured to process a substrate, and a heating device. The heating device comprises at least one sidewall insulating part surrounding the reaction vessel, a ceiling insulating part placed on the sidewall insulating part and comprising a plurality of stress relief grooves, and a heating element installed at an inner side of the sidewall insulating part.
摘要翻译：提供了一种基板处理装置。基板处理装置包括构造成处理基板的反应容器和加热装置。加热装置包括围绕反应容器的至少一个侧壁绝缘部分，设置在侧壁绝缘部分上并包括多个应力释放槽的顶部绝缘部分和安装在侧壁绝缘部分的内侧的加热元件。

9. 发明授权

US09779970B2 Heater supporting device 有权
公开(公告)号：US09779970B2
公开(公告)日：2017-10-03
申请号：US13101625
申请日：2011-05-05
申请人： Tetsuya Kosugi , Hitoshi Murata , Shinobu Sugiura , Masaaki Ueno
发明人： Tetsuya Kosugi , Hitoshi Murata , Shinobu Sugiura , Masaaki Ueno
IPC分类号： H01L21/22 , H01L21/67
CPC分类号： H01L21/67109
摘要： A heater supporting device for use in a semiconductor manufacturing apparatus is provided so as to improve the uniformity of a temperature property and the expected lifespan by preventing support pieces from being damaged and separated from piece holders, and preventing deterioration in adiabatic efficiency in the vicinity of a ceiling of a vertical type furnace. A heating element of a coil shape is disposed around an object. The support pieces are vertically connected in multiple. Hollows of an elliptical shape are formed between the respective support pieces. Concave insertions are formed on one of upper and lower surfaces of the respective support pieces, and convex insertions are formed on the other one of the upper and lower surfaces of the respective support pieces. The convex insertions are insert-fitted with the concave insertions. The support pieces are vertically connected in multiple by insert-fitting the concave insertions to the convex insertions.

10. 发明授权

US4575934A Method and system for automatically attaching sub-assembly to main assembly using industrial robots 失效
标题翻译：使用工业机器人自动将子组件连接到主组件的方法和系统
公开(公告)号：US4575934A
公开(公告)日：1986-03-18
申请号：US534241
申请日：1983-09-21
申请人： Kengo Kitamura , Hitoshi Murata
发明人： Kengo Kitamura , Hitoshi Murata
IPC分类号： B23P19/04 , B62D65/12 , B23P21/00
CPC分类号： B23P19/04 , B62D65/12 , B23P2700/50 , B60G2202/312 , B60G2206/91 , B60G2206/92 , B60G2206/931 , Y10T29/53383
摘要： A method and system for automatically attaching a sub-assembly such as a strut assembly of a strut-type front suspension to a main assembly such as a vehicle body which is transported on a conveyor belt. The method comprises the following steps of: (a) grasping the sub-assembly stored in a bin, carrying the sub-assembly toward the main assembly stopped on the conveyor belt by means of a mechanical hand attached to one of two industrial robots and, on the other hand, carrying an automatic fastening tool holding fastening means toward the main assembly by means of the other robot; (b) positioning the fastening tool carried to the main assembly with respect to the sub-assembly carried to the main assembly; (c) rendering the fastening tool supported by the supporting apparatus and grasped sub-assembly movable with respect to the supporting apparatus and mechanical hand according to the stopped position of the main assembly, while maintaining the positional relationship between the fastening tool and sub-assembly; (d) positioning the fastening tool and sub-assembly with respect to the main assembly; and (e) fastening the fastening means held by the fastening tool to the sub-assembly so that the sub-assembly is attached to the main assembly, while rendering the fastening tool and sub-assembly fixed to the supporting apparatus and mechanical hand, respectively.
摘要翻译：用于将诸如支柱型前悬架的支柱组件的子组件自动地附接到诸如在传送带上传送的车体的主组件的方法和系统。该方法包括以下步骤：（a）抓住储存在仓中的子组件，借助于连接到两个工业机器人之一上的机械手把子组件运送到主体上，该组件停在传送带上，另一方面，通过另一机器人携带自动紧固工具将固定紧固装置朝向主组件; （b）将承载的紧固工具相对于承载到主组件的子组件定位到主组件; （c）使得由支撑装置支撑的紧固工具和被抓握的子组件相对于支撑装置和机械手可根据主组件的停止位置移动，同时保持紧固工具和子组件之间的位置关系 ; （d）相对于主组件定位紧固工具和子组件; 和（e）将由紧固工具保持的紧固装置紧固到子组件，使得子组件分别附接到主组件，同时使紧固工具和子组件分别固定到支撑装置和机械手。

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