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1. 发明授权

US5330584A Solar cell 失效
标题翻译：太阳能电池
公开(公告)号：US5330584A
公开(公告)日：1994-07-19
申请号：US959908
申请日：1992-10-13
申请人： Tatsuo Saga , Tadashi Hisamatsu , Toshinobu Matsutani
发明人： Tatsuo Saga , Tadashi Hisamatsu , Toshinobu Matsutani
IPC分类号： H01L31/04 , H01L31/0352 , H01L31/068 , H01L31/06
CPC分类号： H01L31/0693 , H01L31/03529 , H01L31/0443 , H01L31/068 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a first semiconductor region of a P type, a second semiconductor region of an N type in contact with the first semiconductor region so as to form a PN junction therebetween, and a third semiconductor region of a P.sup.+ type in contact with both the first and second semiconductor regions and having a higher impurity concentration than that of the first semiconductor region.
摘要翻译：太阳能电池包括P型的第一半导体区域，与第一半导体区域接触的N型的第二半导体区域，以便在其间形成PN结，以及与两者接触的P +型的第三半导体区域第一和第二半导体区域，并且具有比第一半导体区域的杂质浓度更高的杂质浓度。

2. 发明授权

US06262358B1 Solar cell module and solar cell panel using the same 有权
标题翻译：太阳能电池组件和使用太阳能电池组件的太阳能电池板
公开(公告)号：US06262358B1
公开(公告)日：2001-07-17
申请号：US09504101
申请日：2000-02-14
申请人： Kunio Kamimura , Keiji Shimada , Toshinobu Matsutani , Tatsuo Saga
发明人： Kunio Kamimura , Keiji Shimada , Toshinobu Matsutani , Tatsuo Saga
IPC分类号： H01L31048
CPC分类号： H01L31/044 , B64G1/443 , H01L31/048 , H01L31/0504 , H01L31/0547 , H02S40/22 , Y02E10/52
摘要： A solar cell module includes a substrate, a plurality of solar cells arranged in a plane on the substrate, a connection member for electrically connecting the plurality of solar cells to each other to form a power generating circuit, and a single transparent cover sheet for covering the plurality of solar cells and the connection member.
摘要翻译：太阳能电池模块包括基板，布置在基板上的平面中的多个太阳能电池，用于将多个太阳能电池彼此电连接以形成发电电路的连接构件和用于覆盖的单个透明盖板多个太阳能电池和连接构件。

3. 发明授权

US4029518A Solar cell 失效
标题翻译：太阳能电池
公开(公告)号：US4029518A
公开(公告)日：1977-06-14
申请号：US633978
申请日：1975-11-20
申请人： Toshinobu Matsutani , Keiichi Nishida
发明人： Toshinobu Matsutani , Keiichi Nishida
IPC分类号： H01L31/04 , H01L31/068 , H01L31/06
CPC分类号： H01L31/068 , Y02E10/547
摘要： A P-type diffusion layer is formed on an N-type silicon semiconductor wafer to establish a P-N junction in a solar cell, the diffusion layer being exposed to radiation. A pair of electrodes are formed on the surfaces of the diffusion layer and the semiconductor wafer in a desired configuration in order to provide output of electric energy generated by the solar cell. The diffusion layer is formed in such a manner that the layer has a thickness of around 3 .mu.m at areas where the electrode is formed and has a thickness of around or below 0.5 .mu.m at regions on which the electrode is not formed. With such an arrangement, radiation having a wavelength of about or shorter than 400 m.mu.m can be used for performing optoelectric generation.
摘要翻译：在N型硅半导体晶片上形成P型扩散层，以在太阳能电池中建立P-N结，扩散层暴露于辐射。为了提供由太阳能电池产生的电能的输出，在所需的结构中，在扩散层和半导体晶片的表面上形成一对电极。扩散层形成为在形成电极的区域具有约3μm的厚度，并且在不形成电极的区域具有大约或小于0.5μm的厚度。通过这样的配置，可以使用波长约为400μm以下的辐射进行光电发电。

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