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1. 发明申请

US20150076517A1 POWER SEMICONDUCTOR DEVICE 有权
标题翻译：功率半导体器件
公开(公告)号：US20150076517A1
公开(公告)日：2015-03-19
申请号：US14364189
申请日：2012-01-25
申请人： Mamoru Terai , Tatsuo Ota , Hiroya Ikuta , Kenichi Hayashi , Takashi Nishimura , Toshiaki Shinohara
发明人： Mamoru Terai , Tatsuo Ota , Hiroya Ikuta , Kenichi Hayashi , Takashi Nishimura , Toshiaki Shinohara
IPC分类号： H01L23/31 , H01L29/20 , H01L29/16 , H01L23/498
CPC分类号： H01L23/3135 , H01L23/24 , H01L23/49811 , H01L23/49827 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/072 , H01L25/18 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L2224/32225 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/3716 , H01L2224/3754 , H01L2224/40095 , H01L2224/40137 , H01L2224/40139 , H01L2224/45015 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49109 , H01L2224/4911 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2924/00014 , H01L2924/014 , H01L2924/07802 , H01L2924/12042 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/351 , H01L2224/48227 , H01L2924/00012 , H01L2924/00 , H01L2924/2076 , H01L2224/45099
摘要： A power semiconductor device is provided with a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate; semiconductor elements for electric power which are affixed to the surface of the front-surface electrode pattern; a partition wall which is provided on the front-surface electrode pattern so as to enclose the semiconductor elements for electric power; a first sealing resin member which is filled inside the partition wall; a second sealing resin member which covers the first sealing resin member and a part of the semiconductor-element substrate which is exposed from the partition wall, wherein an electrode for a relay terminal is provided on a surface of the partition wall, and a wiring from inside of the partition wall to outside of the partition wall is led out via the electrode for a relay terminal.
摘要翻译：功率半导体器件设置有半导体元件基板，其中在绝缘基板的表面上形成有前表面电极图案; 固定在前表面电极图案的表面上的用于电力的半导体元件; 分隔壁，设置在前表面电极图案上，以便包围用于电力的半导体元件; 填充在分隔壁内的第一密封树脂构件; 覆盖所述第一密封树脂部件的第二密封树脂部件和从所述隔壁暴露的所述半导体元件基板的一部分，其中，在所述隔壁的表面上设置有用于中继端子的电极，分隔壁内部的分隔壁外侧经由用于继电器端子的电极引出。

2. 发明授权

US08674492B2 Power module 有权
标题翻译：电源模块
公开(公告)号：US08674492B2
公开(公告)日：2014-03-18
申请号：US13748422
申请日：2013-01-23
申请人： Tatsuo Ota , Toshiaki Shinohara , Mamoru Terai , Hiroya Ikuta
发明人： Tatsuo Ota , Toshiaki Shinohara , Mamoru Terai , Hiroya Ikuta
IPC分类号： H01L23/52
CPC分类号： H01L23/36 , H01L23/24 , H01L23/3121 , H01L23/492 , H01L23/49833 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/072 , H01L2224/29101 , H01L2224/32245 , H01L2224/37147 , H01L2224/40095 , H01L2224/40137 , H01L2224/40139 , H01L2224/40245 , H01L2224/45124 , H01L2224/48091 , H01L2224/4903 , H01L2224/4911 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83101 , H01L2224/83447 , H01L2224/83801 , H01L2224/84801 , H01L2924/13055 , H01L2924/13091 , H01L2924/15747 , H01L2924/171 , H01L2924/181 , H01L2924/18301 , H01L2924/19107 , H01L2924/00014 , H01L2924/00 , H01L2924/014 , H01L2924/00012
摘要： A power module according to the present invention is a power module configured such that a power device chip is arranged within an outer casing and an electrode of the power device chip is connected to an external electrode that is integrated with the outer casing. The power module includes: a heat spreader fixed inside the outer casing; the power device chip solder-bonded on the heat spreader; an insulating dam formed on the heat spreader so as to surround the power device chip; and an internal main electrode having one end thereof solder-bonded to the electrode of the power device chip and the other end thereof fixed to an upper surface of the dam. The external electrode and the other end of the internal main electrode are electrically connected to each other by wire bonding.
摘要翻译：根据本发明的电源模块是电源模块，其被配置为使得功率器件芯片布置在外壳内，并且功率器件芯片的电极连接到与外壳一体化的外部电极。电源模块包括：固定在外壳内的散热器; 功率器件芯片焊接在散热器上; 形成在散热器上的绝缘水坝，以围绕功率器件芯片; 以及内部主电极，其一端焊接到功率器件芯片的电极上，另一端固定在大坝的上表面。外部电极和内部主电极的另一端通过引线接合彼此电连接。

3. 发明授权

US09343388B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US09343388B2
公开(公告)日：2016-05-17
申请号：US14364189
申请日：2012-01-25
申请人： Mamoru Terai , Tatsuo Ota , Hiroya Ikuta , Kenichi Hayashi , Takashi Nishimura , Toshiaki Shinohara
发明人： Mamoru Terai , Tatsuo Ota , Hiroya Ikuta , Kenichi Hayashi , Takashi Nishimura , Toshiaki Shinohara
IPC分类号： H01L23/31 , H01L25/07 , H01L23/24 , H01L23/498 , H01L29/16 , H01L29/20 , H01L23/00 , H01L25/18
CPC分类号： H01L23/3135 , H01L23/24 , H01L23/49811 , H01L23/49827 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/072 , H01L25/18 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L2224/32225 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/3716 , H01L2224/3754 , H01L2224/40095 , H01L2224/40137 , H01L2224/40139 , H01L2224/45015 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49109 , H01L2224/4911 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2924/00014 , H01L2924/014 , H01L2924/07802 , H01L2924/12042 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/351 , H01L2224/48227 , H01L2924/00012 , H01L2924/00 , H01L2924/2076 , H01L2224/45099
摘要： A power semiconductor device is provided with a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate; semiconductor elements for electric power which are affixed to the surface of the front-surface electrode pattern; a partition wall which is provided on the front-surface electrode pattern so as to enclose the semiconductor elements for electric power; a first sealing resin member which is filled inside the partition wall; a second sealing resin member which covers the first sealing resin member and a part of the semiconductor-element substrate which is exposed from the partition wall, wherein an electrode for a relay terminal is provided on a surface of the partition wall, and a wiring from inside of the partition wall to outside of the partition wall is led out via the electrode for a relay terminal.
摘要翻译：功率半导体器件设置有半导体元件基板，其中在绝缘基板的表面上形成有前表面电极图案; 固定在前表面电极图案的表面上的用于电力的半导体元件; 分隔壁，设置在前表面电极图案上，以便包围用于电力的半导体元件; 填充在分隔壁内的第一密封树脂构件; 覆盖所述第一密封树脂部件的第二密封树脂部件和从所述隔壁暴露的所述半导体元件基板的一部分，其中，在所述隔壁的表面上设置有用于中继端子的电极，分隔壁内部的分隔壁外侧经由用于继电器端子的电极引出。

4. 发明授权

US08558367B2 Semiconductor module 失效
标题翻译：半导体模块
公开(公告)号：US08558367B2
公开(公告)日：2013-10-15
申请号：US13365409
申请日：2012-02-03
申请人： Tatsuo Ota , Toshiaki Shinohara
发明人： Tatsuo Ota , Toshiaki Shinohara
IPC分类号： H01L23/24
CPC分类号： H01L23/4952 , H01L23/24 , H01L23/3135 , H01L23/3735 , H01L23/4334 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/072 , H01L2224/291 , H01L2224/29339 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/37147 , H01L2224/40095 , H01L2224/40137 , H01L2224/40139 , H01L2224/40225 , H01L2224/40227 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73215 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8384 , H01L2224/84801 , H01L2924/01029 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/351 , H01L2924/00012 , H01L2924/014 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor module includes: an insulating plate; a plurality of metal patterns formed on the insulating plate and spaced apart from each other; a power device chip solder-joined on one the metal pattern; a lead frame solder-joined on the metal pattern to which the power device chip is not solder-joined, and on the power device chip; an external main electrode provided to an outer casing, and joined by wire bonding to the lead frame above the metal pattern to which the power device chip is not joined; and a sealing resin formed by potting to seal the power device chip, the lead frame, and the metal patterns.
摘要翻译：半导体模块包括：绝缘板; 形成在所述绝缘板上并彼此间隔开的多个金属图案; 在一个金属图案上焊接接合的功率器件芯片; 在功率器件芯片未焊接到的金属图案上焊接的引线框架和功率器件芯片; 外部主电极，设置在外壳上，通过引线接合连接到功率器件芯片未连接的金属图案上方的引线框架; 以及通过灌封形成的密封树脂，以密封功率器件芯片，引线框架和金属图案。

5. 发明申请

US20130009298A1 SEMICONDUCTOR MODULE 失效
标题翻译：半导体模块
公开(公告)号：US20130009298A1
公开(公告)日：2013-01-10
申请号：US13365409
申请日：2012-02-03
申请人： Tatsuo OTA , Toshiaki Shinohara
发明人： Tatsuo OTA , Toshiaki Shinohara
IPC分类号： H01L23/495 , B82Y99/00
CPC分类号： H01L23/4952 , H01L23/24 , H01L23/3135 , H01L23/3735 , H01L23/4334 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/072 , H01L2224/291 , H01L2224/29339 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/37147 , H01L2224/40095 , H01L2224/40137 , H01L2224/40139 , H01L2224/40225 , H01L2224/40227 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73215 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8384 , H01L2224/84801 , H01L2924/01029 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/351 , H01L2924/00012 , H01L2924/014 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor module includes: an insulating plate; a plurality of metal patterns formed on the insulating plate and spaced apart from each other; a power device chip solder-joined on one the metal pattern; a lead frame solder-joined on the metal pattern to which the power device chip is not solder-joined, and on the power device chip; an external main electrode provided to an outer casing, and joined by wire bonding to the lead frame above the metal pattern to which the power device chip is not joined; and a sealing resin formed by potting to seal the power device chip, the lead frame, and the metal patterns.
摘要翻译：半导体模块包括：绝缘板; 形成在所述绝缘板上并彼此间隔开的多个金属图案; 在一个金属图案上焊接接合的功率器件芯片; 在功率器件芯片未焊接到的金属图案上焊接的引线框架和功率器件芯片; 外部主电极，设置在外壳上，通过引线接合连接到功率器件芯片未连接的金属图案上方的引线框架; 以及通过灌封形成的密封树脂，以密封功率器件芯片，引线框架和金属图案。

6. 发明授权

US07656016B2 Power semiconductor device 失效
标题翻译：功率半导体器件
公开(公告)号：US07656016B2
公开(公告)日：2010-02-02
申请号：US11295442
申请日：2005-12-07
申请人： Naoki Yoshimatsu , Takanobu Yoshida , Toshiaki Shinohara
发明人： Naoki Yoshimatsu , Takanobu Yoshida , Toshiaki Shinohara
IPC分类号： H01L23/02
CPC分类号： H01Q3/26 , H01L23/473 , H01L25/112 , H01L2924/0002 , H05K7/20927 , H01L2924/00
摘要： One of the aspects of the present invention is to provide a power semiconductor device, which includes at least one pair of power modules, each of which has a molding surface covered with molding resin and a radiating surface opposite to the molding surface. Also, the power semiconductor device includes a pair of radiating fins sandwiching the power modules such that the molding surfaces of the power modules contact each other and the radiating surfaces thereof each contact the radiating fins.
摘要翻译：本发明的一个方面是提供一种功率半导体器件，其包括至少一对功率模块，每个功率模块具有被模制树脂覆盖的模制表面和与模制表面相对的辐射表面。此外，功率半导体器件包括夹着功率模块的一对散热片，使得功率模块的模制表面彼此接触，并且其辐射表面各自接触散热片。

7. 发明授权

US06979909B2 Semiconductor device and method of manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06979909B2
公开(公告)日：2005-12-27
申请号：US09895319
申请日：2001-07-02
申请人： Toshiaki Shinohara
发明人： Toshiaki Shinohara
IPC分类号： H01L23/29 , H01L23/433 , H01L23/495 , H01L23/50 , H01L25/04 , H01L25/07 , H01L25/18 , H01L23/28
CPC分类号： H01L24/49 , H01L23/4334 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L2224/32245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/4911 , H01L2224/49111 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01068 , H01L2924/01074 , H01L2924/014 , H01L2924/13055 , H01L2924/1532 , H01L2924/15747 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A lead frame (2a) has a die bonding pad portion (3) and an inner lead portion (4). A power element (1) is mounted on the die bonding pad portion (3) of the lead frame (2a) and is bonded to the die bonding pad portion (3) with solder (9). The power element (1) has electrodes connected through an aluminum wire (8) to the inner lead portion (4) of another lead frame (2b). A metal block (5) has a surface formed with a protrusion bonded to the lead frame (2a) in opposed relation to the power element (1). A resin package (6) has an insulation layer (7) formed on the opposite surface of the metal block (5) from the lead frame (2a), and seals the power element (1), the lead frames (2a, 2b) and the metal block (5). An external heat dissipator (11) is mounted on a surface of the insulation layer (7) opposite from the metal block (5). A semiconductor device and a method of manufacturing the same improve a heat dissipation characteristic and maintain a dielectric breakdown voltage.
摘要翻译：引线框架（2a）具有管芯接合焊盘部分（3）和内引线部分（4）。功率元件（1）安装在引线框架（2a）的芯片接合焊盘部分（3）上，并用焊料（9）与芯片接合焊盘部分（3）接合。功率元件（1）具有通过铝线（8）连接到另一引线框架（2b）的内引线部分（4）的电极。金属块（5）具有与功率元件（1）相对的形成有与引线框架（2a）接合的突起的表面。树脂封装（6）具有形成在金属块（5）的与引线框架（2a）相反的表面上的绝缘层（7），并且密封功率元件（1），引线框架（2a） b）和金属块（5）。外部散热器（11）安装在与金属块（5）相对的绝缘层（7）的表面上。半导体器件及其制造方法提高散热特性并保持绝缘击穿电压。

8. 发明授权

US06914321B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06914321B2
公开(公告)日：2005-07-05
申请号：US09895025
申请日：2001-07-02
申请人： Toshiaki Shinohara
发明人： Toshiaki Shinohara
IPC分类号： H01L23/34 , H01L23/36 , H01L23/373 , H01L23/433 , H01L23/495 , H01L23/02
CPC分类号： H01L24/32 , H01L23/4334 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/48247 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2224/83385 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01042 , H01L2924/01068 , H01L2924/01074 , H01L2924/0132 , H01L2924/014 , H01L2924/12041 , H01L2924/13055 , H01L2924/15787 , H01L2924/181 , H01L2924/19043 , H01L2924/19107 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2224/49111
摘要： It is an object to provide a semiconductor device having an improved heat dissipation characteristic. A power element is mounted on and jointed and to a metal block through a jointing material. An insulating substrate includes a ceramic substrate and metal layers formed on both surfaces of the ceramic substrate and having thicknesses equal to each other. The metal block and the insulating substrate are provided per insulation unit of the power element. The metal layer of the insulating substrate is joined to a surface of the metal block through a jointing material opposite to a surface thereof for forming the power element. An electrode terminal is attached to a surface of the metal block having a power element joined thereto through ultrasonic junction and the like. Electrode terminals are connected to electrodes of the power element through aluminum wires. The power element, the electrode terminals and the metal block are sealed with a resin package while the metal layer of the insulating substrate remains exposed. An external heat dissipator is attached to the exposed metal layer of the insulating substrate.
摘要翻译：本发明的目的是提供具有改善的散热特性的半导体器件。功率元件通过接合材料安装在金属块上并与金属块接合。绝缘基板包括陶瓷基板和形成在陶瓷基板的两个表面上并具有彼此相等的厚度的金属层。金属块和绝缘基板每个功率元件的绝缘单元设置。绝缘基板的金属层通过与其表面相对的接合材料接合到金属块的表面，用于形成功率元件。电极端子通过超声波接合等附接到具有与其连接的功率元件的金属块的表面。电极端子通过铝线连接到功率元件的电极。功率元件，电极端子和金属块用树脂封装密封，同时绝缘基板的金属层保持暴露。外部散热器附着在绝缘基板的暴露的金属层上。

9. 发明授权

US06798922B1 Image transmission method and image transmission device for realizing the same 有权
标题翻译：图像传输方法和图像传输装置实现相同
公开(公告)号：US06798922B1
公开(公告)日：2004-09-28
申请号：US09743452
申请日：2001-01-10
申请人： Kengo Tsuzuki , Toshiaki Shinohara
发明人： Kengo Tsuzuki , Toshiaki Shinohara
IPC分类号： G06K920
CPC分类号： H04N1/3873
摘要： According to the present invention, it is designed in such manner that a designation minimum unit for designating a position of an effective region of an image transmitted from a camera and a designation minimum unit for designating a size of the effective region are set independently from each other so that a restriction on one of them is not extended or applied to the other. Apart from designation minimum units (C, D) for determining the extent of an image region to be transmitted (effective region), designation minimum units (I, J) for determining position of the effective region are set to values irrelevant to the designation minimum units for determining the extent of the effective region. As a result, even when there is a restriction on the setting of one of the designation minimum units, i.e. either the designation minimum unit for designating the position of the effective region or the designation minimum unit for designating the size of the effective region, it can be set in such manner that the restriction applied to one of them is not extended or applied to the other.
摘要翻译：根据本发明，它被设计成这样的方式：指定从相机发送的图像的有效区域的位置的指定最小单位和用于指定有效区域的大小的指定最小单位是独立于每个对其中一个的限制不会扩展或应用于另一个。除了用于确定要发送的图像区域的范围（有效区域）的指定最小单位（C，D）之外，将用于确定有效区域的位置的指定最小单位（I，J）设置为与指定最小值无关的值确定有效区域范围的单位。因此，即使在对指定最小单位之一进行限制的情况下，即用于指定有效区域的位置的指定最小单位或用于指定有效区域的大小的指定最小单位也是如此可以以这样的方式来设置，即对其中一个应用的限制不被扩展或应用于另一个。

10. 发明授权

US06787900B2 Semiconductor module and insulating substrate thereof 失效
标题翻译：半导体模块及其绝缘基板
公开(公告)号：US06787900B2
公开(公告)日：2004-09-07
申请号：US09534043
申请日：2000-03-24
申请人： Toshiaki Shinohara , Akira Fujita , Takanobu Yoshida
发明人： Toshiaki Shinohara , Akira Fujita , Takanobu Yoshida
IPC分类号： H01L2334
CPC分类号： H01L23/13 , H01L23/3121 , H01L23/3735 , H01L24/45 , H01L24/48 , H01L25/072 , H01L2224/05599 , H01L2224/45124 , H01L2224/48137 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/16195 , H01L2924/181 , H01L2924/19107 , H01L2924/3511 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor module (18) includes a ring-shaped metal frame (13) having a bottom surface for contact with a top surface of an external heat sink (11) and serving as a mounting surface. The ring-shaped metal frame (13) has a flange (20) along an inner periphery thereof for engagement with an outer peripheral part of an insulating substrate (17) at a first main surface of a ceramic plate (1). The metal frame (13) is fastened to the external heat sink (11) by screws (12) or bonded to the external heat sink (11) with an adhesive. The flange (20) of the metal frame (13) fastened or bonded to the external heat sink (11) presses the outer peripheral part of the insulating substrate (17) toward the external heat sink (11). This pressing force holds the insulating substrate (17) in pressure contact with the external heat sink (11). The semiconductor module (18) avoids the problem of a decreasing pressing force resulting from deformation to ensure a satisfactory heat dissipating property over a long period of time.
摘要翻译：半导体模块（18）包括具有用于与外部散热器（11）的顶表面接触并用作安装表面的底表面的环形金属框架（13）。环形金属框架（13）沿其内周具有凸缘（20），用于与陶瓷板（1）的第一主表面处的绝缘基板（17）的外周部分接合。金属框架（13）通过螺钉（12）固定在外部散热器（11）上，或者用粘合剂粘合到外部散热器（11）上。紧固或接合到外部散热器（11）的金属框架（13）的凸缘（20）将绝缘基板（17）的外周部分朝向外部散热器（11）挤压。该按压力使绝缘基板（17）与外部散热器（11）压力接触。半导体模块（18）避免了由变形产生的压力减小的问题，以确保长时间的令人满意的散热性能。

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