专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090153203A1 PLL CIRCUIT 有权
标题翻译： PLL电路
公开(公告)号：US20090153203A1
公开(公告)日：2009-06-18
申请号：US12066000
申请日：2006-07-27
申请人： Tatsuo Okamoto , Yukio Arima , Tsuyoshi Ebuchi , Kyoko Hirata
发明人： Tatsuo Okamoto , Yukio Arima , Tsuyoshi Ebuchi , Kyoko Hirata
IPC分类号： H03L7/06
CPC分类号： H03L7/10 , H03L7/085 , H03L7/099 , H03L7/0995 , H03L7/1976
摘要： A PLL comprises a current-controlled oscillator (18) for generating an output clock signal based on a current signal generated based on a phase difference between a reference clock signal and a feedback clock signal, a current source (28), and an initialization switch (26) for performing an open/close operation based on the initialization signal, the initialization switch being inserted in series to an input terminal of the current-controlled oscillator (18) and the current source (28).
摘要翻译： PLL包括电流控制振荡器（18），用于基于基于参考时钟信号和反馈时钟信号之间的相位差产生的电流信号，电流源（28）和初始化开关（18）来产生输出时钟信号（26），用于基于所述初始化信号执行打开/关闭操作，所述初始化开关串联插入到所述电流控制振荡器（18）和所述电流源（28）的输入端子。

2. 发明申请

US20110115531A1 PLL CIRCUIT 审中-公开
标题翻译： PLL电路
公开(公告)号：US20110115531A1
公开(公告)日：2011-05-19
申请号：US13014362
申请日：2011-01-26
申请人： Tatsuo Okamoto , Yukio Arima , Tsuyoshi Ebuchi , Kyoko Hirata
发明人： Tatsuo Okamoto , Yukio Arima , Tsuyoshi Ebuchi , Kyoko Hirata
IPC分类号： H03L7/095 , H03B19/00 , H03L7/10
CPC分类号： H03L7/10 , H03L7/085 , H03L7/099 , H03L7/0995 , H03L7/1976
摘要： A PLL comprises a current-controlled oscillator (18) for generating an output clock signal based on a current signal generated based on a phase difference between a reference clock signal and a feedback clock signal, a current source (28), and an initialization switch (26) for performing an open/close operation based on the initialization signal, the initialization switch being inserted in series to an input terminal of the current-controlled oscillator (18) and the current source (28).
摘要翻译： PLL包括电流控制振荡器（18），用于基于基于参考时钟信号和反馈时钟信号之间的相位差产生的电流信号，电流源（28）和初始化开关（18）来产生输出时钟信号（26），用于基于所述初始化信号执行打开/关闭操作，所述初始化开关串联插入到所述电流控制振荡器（18）和所述电流源（28）的输入端子。

3. 发明授权

US07898305B2 PLL circuit 有权
标题翻译： PLL电路
公开(公告)号：US07898305B2
公开(公告)日：2011-03-01
申请号：US12651061
申请日：2009-12-31
申请人： Tatsuo Okamoto , Yukio Arima , Tsuyoshi Ebuchi , Kyoko Hirata
发明人： Tatsuo Okamoto , Yukio Arima , Tsuyoshi Ebuchi , Kyoko Hirata
IPC分类号： H03L7/00
CPC分类号： H03L7/10 , H03L7/085 , H03L7/099 , H03L7/0995 , H03L7/1976
摘要： A PLL comprises a current-controlled oscillator (18) for generating an output clock signal based on a current signal generated based on a phase difference between a reference clock signal and a feedback clock signal, a current source (28), and an initialization switch (26) for performing an open/close operation based on the initialization signal, the initialization switch being inserted in series to an input terminal of the current-controlled oscillator (18) and the current source (28).
摘要翻译： PLL包括电流控制振荡器（18），用于基于基于参考时钟信号和反馈时钟信号之间的相位差产生的电流信号，电流源（28）和初始化开关（18）来产生输出时钟信号（26），用于基于所述初始化信号执行打开/关闭操作，所述初始化开关串联插入到所述电流控制振荡器（18）和所述电流源（28）的输入端子。

4. 发明授权

US07746132B2 PLL circuit 有权
标题翻译： PLL电路
公开(公告)号：US07746132B2
公开(公告)日：2010-06-29
申请号：US12066000
申请日：2006-07-27
申请人： Tatsuo Okamoto , Yukio Arima , Tsuyoshi Ebuchi , Kyoko Hirata
发明人： Tatsuo Okamoto , Yukio Arima , Tsuyoshi Ebuchi , Kyoko Hirata
IPC分类号： H03L7/06
CPC分类号： H03L7/10 , H03L7/085 , H03L7/099 , H03L7/0995 , H03L7/1976
摘要： A PLL comprises a current-controlled oscillator (18) for generating an output clock signal based on a current signal generated based on a phase difference between a reference clock signal and a feedback clock signal, a current source (28), and an initialization switch (26) for performing an open/close operation based on the initialization signal, the initialization switch being inserted in series to an input terminal of the current-controlled oscillator (18) and the current source (28).
摘要翻译： PLL包括电流控制振荡器（18），用于基于基于参考时钟信号和反馈时钟信号之间的相位差产生的电流信号，电流源（28）和初始化开关（18）来产生输出时钟信号（26），用于基于所述初始化信号执行打开/关闭操作，所述初始化开关串联插入到所述电流控制振荡器（18）和所述电流源（28）的输入端子。

5. 发明授权

US4985319A Process for manufacturing a photomask 失效
标题翻译：光掩模制造工艺
公开(公告)号：US4985319A
公开(公告)日：1991-01-15
申请号：US425088
申请日：1989-10-23
申请人： Yaichiro Watakabe , Tatsuo Okamoto , Shuichi Matsuda
发明人： Yaichiro Watakabe , Tatsuo Okamoto , Shuichi Matsuda
IPC分类号： G03F1/00 , G03F1/54 , H01L21/027
CPC分类号： G03F1/54
摘要： A photomask manufacturing process including a step of forming metal silicide film on a transparent silica glass substrate. A resist is applied onto the metal silicide film and then a patterning mask is provided by light or electron beam, followed by developing step. Exposed portions of the metal silicide film is etched away using a dry etching process.

6. 发明授权

US4903117A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4903117A
公开(公告)日：1990-02-20
申请号：US203445
申请日：1988-06-07
申请人： Tatsuo Okamoto , Ikuo Ogoh
发明人： Tatsuo Okamoto , Ikuo Ogoh
IPC分类号： H01L29/43 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/532 , H01L29/41
CPC分类号： H01L23/53223 , H01L2924/0002 , Y10S257/915
摘要： A silicon oxide film and a BPSG film are formed on a silicon substrate to serve as insulating films, and a contact hole is selectively formed in the insulating films. An impurity diffusion layer is formed on the surface layer of the semiconductor substrate at the bottom portion of the contact hole. A second metal film serving as a metal electrode is formed to cover the BPSG film and the impurity diffusion layer, and a first metal film serving as a barrier layer is formed between the second metal film and the BPSG film and impurity diffusion layer. The first metal film prevents boron contained in the BPSG film from being diffused in the second metal film, thereby to prevent precipitation of silicon in the contact hole.
摘要翻译：在硅衬底上形成氧化硅膜和BPSG膜以用作绝缘膜，并且在绝缘膜中选择性地形成接触孔。在接触孔的底部的半导体衬底的表面层上形成杂质扩散层。形成用作金属电极的第二金属膜以覆盖BPSG膜和杂质扩散层，并且在第二金属膜和BPSG膜和杂质扩散层之间形成用作阻挡层的第一金属膜。第一金属膜防止BPSG膜中含有的硼扩散到第二金属膜中，从而防止硅在接触孔中析出。

7. 发明授权

US4872050A Interconnection structure in semiconductor device and manufacturing method of the same 失效
标题翻译：半导体器件的互连结构及其制造方法
公开(公告)号：US4872050A
公开(公告)日：1989-10-03
申请号：US168386
申请日：1988-03-15
申请人： Tatsuo Okamoto , Hideo Kotani , Takio Oono , Kiyoto Watabe , Yasushi Kinoshita , Yoshikazu Nishikawa
发明人： Tatsuo Okamoto , Hideo Kotani , Takio Oono , Kiyoto Watabe , Yasushi Kinoshita , Yoshikazu Nishikawa
IPC分类号： H01L23/485 , H01L23/522
CPC分类号： H01L24/02 , H01L21/76805 , H01L23/5226 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01074 , H01L2924/014 , H01L2924/05042
摘要： Conductive layers (5a, 9a) included in a multi-layer structure (30a) are electrically interconnected through a conductive connection wall (13a) provided in a contact hole (12) and contacting the side surface (22) of the multi-layer structure (30a). The upper conductive layer (11a) existing on the multi-layer structure (30a) and the lower conductive layer (3) exisitng under the multi-layer structure (30a) are electrically interconnected through a conductive film (11b) provided in the contact hole (12). These two interconnections are insulated from each other by an insulating film (18) provided on the connection wall (13a).
摘要翻译：包含在多层结构（30a）中的导电层（5a，9a）通过设置在接触孔（12）中并与多层结构（30a）的侧表面（22）接触的导电连接壁（30a）。存在于层叠结构体（30a）的多层结构（30a）和下导电层（3）上的上导电层（11a）通过设置在接触孔中的导电膜（11b）电连接（12）。这两个互连通过设置在连接壁（13a）上的绝缘膜（18）彼此绝缘。

8. 发明授权

US4043037A Cord-type mowing tool 失效
标题翻译：线式割草工具
公开(公告)号：US4043037A
公开(公告)日：1977-08-23
申请号：US732588
申请日：1976-10-14
申请人： Tatsuo Okamoto , Masat Nogawa , Nobuyoshi Okabe
发明人： Tatsuo Okamoto , Masat Nogawa , Nobuyoshi Okabe
IPC分类号： A01D34/73 , A01D34/416 , A01D55/18 , B27B27/00
CPC分类号： A01D34/416
摘要： A cord-type mowing tool having a cutter body formed with at least one radially extending bore for receiving a cord serving as a grass cutting blade, and a clamping member fitted in the central bottom opening of the cutter body for forcing against the central portion of the cutter body an end portion of the cord inserted in the radially extending bore to hold the cord in place. The clamping member is threadably connected to the cutter body, so that by loosening and tightening the threadable connection it is possible to readily replace the old cord by a new cord of a predetermined length. The grass cutting tool is simple in construction, light in weight and reliable in performance.
摘要翻译：一种绳型割草工具，其具有形成有至少一个径向延伸的孔的刀体，用于接收用作草切刀的绳索，以及夹紧构件，其装配在刀体的中心底部开口中，用于迫使其抵抗切割器主体将插入径向延伸的孔中的绳索的端部保持在适当的位置。夹紧构件螺纹连接到切割器主体，从而通过松开和拧紧可螺纹连接，可以用预定长度的新的线容易地更换旧的绳索。草切工具施工简单，重量轻，性能可靠。

9. 发明授权

US4959329A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4959329A
公开(公告)日：1990-09-25
申请号：US425926
申请日：1989-10-24
申请人： Tatsuo Okamoto , Akihiko Ohsaki
发明人： Tatsuo Okamoto , Akihiko Ohsaki
IPC分类号： H01L21/60 , H01L23/485
CPC分类号： H01L21/76897 , H01L23/485 , H01L2924/0002 , Y10S438/927
摘要： The present invention relates to a semiconductor device having a contact electrode structure and a method of manufacturing the same. An insulating layer is provided in a second semiconductor layer or in a junction part between the second semiconductor layer and a first semiconductor layer correspondence to a contact hole. Therefore, even if a pit generated at a junction part between the second semiconductor layer and a conductive layer in the contact hole grows, the growth of the pit is inhibited by the insulating layer, whereby leakage current caused between the first and second semiconductor layers can be reduced, a reliability of the device being thus enhanced.
摘要翻译：本发明涉及一种具有接触电极结构的半导体器件及其制造方法。绝缘层设置在第二半导体层中或第二半导体层与对应于接触孔的第一半导体层之间的接合部分中。因此，即使在接触孔中的第二半导体层和导电层之间的接合部处产生的凹坑生长，由于绝缘层抑制了凹坑的生长，从而在第一和第二半导体层之间产生的漏电流也可以可以降低设备的可靠性。

10. 发明授权

US4887143A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4887143A
公开(公告)日：1989-12-12
申请号：US174498
申请日：1988-03-28
申请人： Tatsuo Okamoto , Akihiko Ohsaki
发明人： Tatsuo Okamoto , Akihiko Ohsaki
IPC分类号： H01L21/60 , H01L23/485
CPC分类号： H01L21/76897 , H01L23/485 , H01L2924/0002
摘要： The present invention relates to a semiconductor device having a contact electrode structure and a method of manufacturing the same. An insulating layer is provided in a second semiconductor layer or in a junction part between the second semiconductor layer and a first semiconductor layer correspondence to a contact hole. Therefore, even if a pit generated at a junction part between the second semiconductor layer and a conductive layer in the contact hole grows, the growth of the pit is inhibited by the insulating layer, whereby leakage current caused between the first and second semiconductor layers can be reduced, a reliability of the device being thus enhanced.
摘要翻译：本发明涉及具有接触电极结构的半导体器件及其制造方法。绝缘层设置在第二半导体层中或第二半导体层与对应于接触孔的第一半导体层之间的接合部分中。因此，即使在接触孔中的第二半导体层和导电层之间的接合部处产生的凹坑生长，由于绝缘层抑制了凹坑的生长，从而在第一和第二半导体层之间产生的漏电流也可以可以降低设备的可靠性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式