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1. 发明申请

US20080236747A1 GAS ANALYZING APPARATUS AND SUBSTRATE PROCESSING SYSTEM 审中-公开
标题翻译：气体分析装置和基板处理系统
公开(公告)号：US20080236747A1
公开(公告)日：2008-10-02
申请号：US12057940
申请日：2008-03-28
申请人： Tatsuo MATSUDO , Chishio KOSHIMIZU , Tomohiro SUZUKI , Jun Abe
发明人： Tatsuo MATSUDO , Chishio KOSHIMIZU , Tomohiro SUZUKI , Jun Abe
IPC分类号： G01B11/02 , G01N25/00 , H01J49/26 , C23F1/00
CPC分类号： H01J49/16 , G01K5/486 , G01K11/12
摘要： A gas analyzing apparatus includes a measurement chamber having a mounting member for mounting thereon a substrate on which a sample is adsorbed; a depressurizing mechanism for depressurizing the inside of the measurement chamber; and a heating unit for heating the substrate having the adsorbed sample thereon and mounted on the mounting member. The apparatus further includes: a mass spectrometer inserted in the measurement chamber, for detecting gas molecules escaping from the sample with an increasing temperature; and a temperature measuring unit for measuring a temperature of the substrate having the adsorbed sample thereon by using an interferometer which detects an optical thickness of the substrate.
摘要翻译：气体分析装置包括测量室，其具有用于安装其上吸附有样品的基板的安装构件; 用于减压测量室内部的减压机构; 以及加热单元，用于将其上具有吸附样品的基板加热并安装在安装构件上。该装置还包括：插入测量室中的质谱仪，用于检测随着温度升高从样品中逸出的气体分子; 以及温度测量单元，用于通过使用检测基板的光学厚度的干涉仪来测量其上具有吸附样品的基板的温度。

2. 发明申请

US20100206482A1 PLASMA PROCESSING APPARATUS AND TEMPERATURE MEASURING METHOD AND APPARATUS USED THEREIN 有权
标题翻译：等离子体加工装置和温度测量方法及其使用的装置
公开(公告)号：US20100206482A1
公开(公告)日：2010-08-19
申请号：US12698616
申请日：2010-02-02
申请人： Tatsuo MATSUDO , Chishio Koshimizu , Jun Abe
发明人： Tatsuo MATSUDO , Chishio Koshimizu , Jun Abe
IPC分类号： C23F1/08 , G01J5/08 , G01K1/00 , C23C16/00
CPC分类号： H01L21/67248 , G01J5/0003 , G01J5/0007 , G01J5/041 , G01J5/045 , G01J5/048 , G01J5/08 , G01J5/0803 , G01J5/0806 , G01J5/0821 , G01J5/0846 , G01K11/00 , H01J2237/2001
摘要： A plasma processing apparatus includes a temperature measuring unit; airtightly sealed temperature measuring windows provided in a mounting table, for optically communicating to transmit a measurement beam through a top surface and a bottom surface of the mounting table; and one or more connection members for connecting the mounting table and a base plate, which is provided in a space between the mounting table and the base plate. In the plasma processing apparatus, a space above the mounting table is set to be maintained under a vacuum atmosphere, and a space between the mounting table and the base plate is set to be maintained under a normal pressure atmosphere, and each collimator is fixed to the base plate at a position corresponding to each temperature measuring window, thereby measuring a temperature of the substrate via the temperature measuring windows by the temperature measuring unit.
摘要翻译：一种等离子体处理装置，包括：温度测量单元; 设置在安装台上的气密密封温度测量窗，用于光学连通以将测量光束穿过安装台的顶表面和底表面传播; 以及用于连接安装台和设置在安装台和基板之间的空间中的基板的一个或多个连接构件。在等离子体处理装置中，将安装台上方的空间设定为保持在真空气氛下，将安装台和基板之间的间隔设定为保持在常压气氛下，将每个准直器固定在基板在与各温度测量窗对应的位置处，由温度测量单元通过温度测量窗测量基板的温度。

3. 发明申请

US20090228234A1 TEMPERATURE MEASUREMENT APPARATUS AND METHOD 有权
标题翻译：温度测量装置和方法
公开(公告)号：US20090228234A1
公开(公告)日：2009-09-10
申请号：US12399431
申请日：2009-03-06
申请人： Jun ABE , Tatsuo MATSUDO , Chishio KOSHIMIZU
发明人： Jun ABE , Tatsuo MATSUDO , Chishio KOSHIMIZU
IPC分类号： G06F15/00 , G01B9/02
CPC分类号： G01K11/00 , G01K11/125
摘要： A temperature measurement apparatus includes a light source; a first splitter that splits a light beam into a measurement beam and a reference beam; a reference beam reflector that reflects the reference beam; an optical path length adjustor; a second splitter that splits the reflected reference beam into a first reflected reference beam and a second reflected reference beam; a first photodetector that measures an interference between the first reflected reference beam and a reflected measurement beam obtained by the measurement beam reflected from a target object; a second photodetector that measures an intensity of the second reflected reference beam; and a temperature calculation unit. The temperature calculation unit calculates a location of the interference by subtracting an output signal of the second photodetector from an output signal of the first photodetector, and calculates a temperature of the target object from the calculated location of the interference.
摘要翻译：温度测量装置包括光源; 第一分离器，其将光束分成测量光束和参考光束; 反射参考光束的参考光束反射器; 光路长度调节器; 第二分离器，其将反射的参考光束分成第一反射参考光束和第二反射参考光束; 测量第一反射参考光束与由目标物体反射的测量光束获得的反射测量光束之间的干涉的第一光电检测器; 第二光电检测器，其测量第二反射参考光束的强度; 和温度计算单元。温度计算单元通过从第一光电检测器的输出信号减去第二光电检测器的输出信号来计算干扰的位置，并根据所计算的干扰位置计算目标对象的温度。

4. 发明申请

US20120084045A1 TEMPERATURE MEASURING METHOD, STORAGE MEDIUM, AND PROGRAM 有权
标题翻译：温度测量方法，存储介质和程序
公开(公告)号：US20120084045A1
公开(公告)日：2012-04-05
申请号：US13248538
申请日：2011-09-29
申请人： Chishio KOSHIMIZU , Jun YAMAWAKU , Tatsuo MATSUDO
发明人： Chishio KOSHIMIZU , Jun YAMAWAKU , Tatsuo MATSUDO
IPC分类号： G01K11/00
CPC分类号： G01K11/125 , G01B9/02021 , G01B9/02025 , G01B9/0209 , G01B11/0675
摘要： Provided is a temperature measuring method which can accurately measure a temperature of an object to be measured compared to a conventional method, even if a thin film is formed on the object. The temperature measuring method includes: transmitting a light from a light source to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film based on an intensity of the second interference wave; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length, based on the calculated film thickness of the thin film; compensating for the optical path length from the first interference wave to the second interference wave based on the calculated optical path difference; and calculating a temperature of the object at the measurement point based on the compensated optical path length.
摘要翻译：提供一种温度测量方法，即使在物体上形成薄膜，也可以与以往的方法相比，能够精确地测定被测量物体的温度。温度测量方法包括：将来自光源的光传输到被测量物体的测量点，所述物体是其上形成有薄膜的基板; 测量由来自基板的表面的反射光引起的第一干涉波，以及由来自基板和薄膜之间的界面和薄膜的后表面的反射光引起的第二干涉波; 计算从第一干涉波到第二干涉波的光路长度; 基于第二干涉波的强度计算薄膜的膜厚; 基于计算出的薄膜的膜厚度，计算基板的光路长度与算出的光程长度之间的光程差; 基于计算的光程差补偿从第一干涉波到第二干涉波的光路长度; 以及基于补偿的光程长度计算测量点处的物体的温度。

5. 发明申请

US20120063486A1 TEMPERATURE MEASURING APPARATUS AND TEMPERATURE MEASURING METHOD 有权
标题翻译：温度测量装置和温度测量方法
公开(公告)号：US20120063486A1
公开(公告)日：2012-03-15
申请号：US13231027
申请日：2011-09-13
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
IPC分类号： G01K11/12
CPC分类号： G01K11/12
摘要： The temperature measuring apparatus includes: a light source; a first wavelength-dividing unit which wavelength-divides a light from the light source into m lights whose wavelength bands are different from one another; m first dividing units which divides each of the m lights from the first wavelength-dividing unit into n lights; a transmitting unit which transmits lights from the m first dividing unit to measurement points of an object to be measured; a light receiving unit which receives a light reflected by each of the measurement points; and a temperature calculating unit which calculates a temperature of each of the measurement points based on a waveform of the light received by the light receiving unit.
摘要翻译：温度测量装置包括：光源; 将来自光源的光波长分割成波长彼此不同的m个光的第一波长分割单元; m个第一分割单元，其将每个m个光从第一波长分割单元分成n个灯; 发射单元，其将来自第m分割单元的光传输到被测量物体的测量点; 光接收单元，其接收由每个测量点反射的光; 以及温度计算单元，其基于由光接收单元接收的光的波形来计算每个测量点的温度。

6. 发明申请

US20120251759A1 COMPONENT IN PROCESSING CHAMBER OF SUBSTRATE PROCESSING APPARATUS AND METHOD OF MEASURING TEMPERATURE OF THE COMPONENT 有权
标题翻译：基板处理装置的加工室中的部件和测量部件温度的方法
公开(公告)号：US20120251759A1
公开(公告)日：2012-10-04
申请号：US13432617
申请日：2012-03-28
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO
IPC分类号： B32B3/14 , G01K11/00 , B32B18/00 , B05C11/00 , B32B33/00
CPC分类号： G01K11/14 , G01K5/48 , H01L21/67248
摘要： A component in a processing chamber of a substrate processing apparatus, where a temperature may be accurately measured by using a temperature measuring apparatus using an interference of a low-coherence light, even when a front surface and a rear surface are not parallel due to abrasion, or the like. A focus ring used in a vacuum atmosphere and of which a temperature is measured includes an abrasive surface exposed to an abrasive atmosphere according to plasma, a nonabrasive surface not exposed to the abrasive atmosphere, a thin-walled portion including a top surface and a bottom surface that are parallel to each other, and a coating member coating the top surface of the thin-walled portion, wherein a mirror-like finishing is performed on each of the top and bottom surfaces of the thin-walled portion.
摘要翻译：在基板处理装置的处理室中的部件，其中即使当前表面和后表面由于磨损而不平行时，也可以通过使用具有低相干光干涉的温度测量装置来精确地测量温度，等等。在真空气氛中使用并且测量温度的聚焦环包括暴露于等离子体的研磨气氛的研磨表面，未暴露于研磨性气氛的非磨损表面，包括顶表面和底部的薄壁部分表面彼此平行;以及涂覆部件，其涂覆在薄壁部分的顶表面上，其中在薄壁部分的每个顶表面和底表面上执行镜像整理。

7. 发明申请

US20120062870A1 PHYSICAL STATE MEASURING APPARATUS AND PHYSICAL STATE MEASURING METHOD 审中-公开
标题翻译：物理状态测量装置和物理状态测量方法
公开(公告)号：US20120062870A1
公开(公告)日：2012-03-15
申请号：US13231037
申请日：2011-09-13
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
IPC分类号： G01B9/02
CPC分类号： G01K11/125 , G01B9/02007 , G01B9/02021 , G01B9/02025 , G01B9/0209
摘要： The physical state measuring apparatus includes: a light source; a transmitting unit which transmits a light from the light source to a measurement point of an object to be measured; a nonlinear optical device which changes a wavelength of the light reflected by the measurement point to a wavelength that is different from the wavelength before the changing; a light receiving unit which receives the light whose wavelength has been changed; and a measuring unit which measures a physical state of the object to be measured at the measurement point based on a waveform of the light received by the light receiving unit.
摘要翻译：物理状态测量装置包括：光源; 发送单元，其将来自所述光源的光发送到待测量对象的测量点; 将由测量点反射的光的波长改变为与变化前的波长不同的波长的非线性光学装置; 接收波长已经改变的光的光接收单元; 以及测量单元，其基于由所述光接收单元接收的光的波形来测量所述测量点处的被测量物体的物理状态。

8. 发明申请

US20120243572A1 TEMPERATURE MEASURING APPARATUS AND TEMPERATURE MEASURING METHOD 有权
标题翻译：温度测量装置和温度测量方法
公开(公告)号：US20120243572A1
公开(公告)日：2012-09-27
申请号：US13428198
申请日：2012-03-23
申请人： Tatsuo MATSUDO , Chishio KOSHIMIZU
发明人： Tatsuo MATSUDO , Chishio KOSHIMIZU
IPC分类号： G01K11/32
CPC分类号： G01K11/12 , G01J5/0007 , G01J5/0044 , G01J5/0821 , G01J2005/583
摘要： A temperature measuring apparatus and a temperature measuring method that may simultaneously measure temperatures of objects in processing chambers. The temperature measuring apparatus includes a first light separating unit which divides light from the light source into measurement lights; second light separating units which divide the measurement lights from the first light separating unit into measurement lights and reference lights; third light separating units which further divide the measurement lights into first to n-th measurement lights; a reference light reflecting unit which reflects the reference lights; an light path length changing unit which changes light path lengths of the reference lights reflected by the reference light reflecting unit; and photodetectors which measure interference between the first to n-th measurement lights reflected by the objects to be measured and the reference lights reflected by the reference light reflecting unit.
摘要翻译：可以同时测量处理室中的物体的温度的温度测量装置和温度测量方法。温度测量装置包括：将来自光源的光分成测量光的第一光分离单元; 第二光分离单元，其将测量光从第一光分离单元分离成测量光和参考光; 第三光分离单元，其进一步将测量光分为第一至第n测量光; 反射参考光的参考光反射单元; 光路长度改变单元，改变由参考光反射单元反射的参考光的光路长度; 以及光检测器，其测量由被测量物体反射的第一至第n测量光与由参考光反射单元反射的参考光之间的干涉。

9. 发明申请

US20120073781A1 TEMPERATURE CONTROL SYSTEM 有权
标题翻译：温度控制系统
公开(公告)号：US20120073781A1
公开(公告)日：2012-03-29
申请号：US13240274
申请日：2011-09-22
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
IPC分类号： B60H1/00
CPC分类号： H01L21/67248 , G01J9/02 , G01J2005/583
摘要： The temperature control system includes: a susceptor which allows an object to be processed to be held on a top surface thereof and includes a flow path, through which a temperature adjusting medium flows, formed therein; a temperature measuring unit which measures a temperature of the object to be processed held on the top surface of the susceptor; a first temperature adjusting unit which adjusts a temperature of the temperature adjusting medium flowing through the flow path; and a second temperature adjusting unit which is disposed between the susceptor and the first temperature adjusting unit, and adjusts a temperature of the temperature adjusting medium based on a result of the measurement of the temperature measuring unit.
摘要翻译：温度控制系统包括：一个允许被处理物体被保持在其顶面上的基座，并且包括在其中形成温度调节介质流过的流路; 温度测量单元，其测量保持在所述基座的顶表面上的被处理物体的温度; 第一温度调节单元，其调节流过所述流路的温度调节介质的温度; 以及第二温度调节单元，其设置在所述基座和所述第一温度调节单元之间，并且基于所述温度测量单元的测量结果来调节所述温度调节介质的温度。

10. 发明申请

US20090047795A1 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM 审中-公开
标题翻译：等离子体加工设备，等离子体处理方法和储存介质
公开(公告)号：US20090047795A1
公开(公告)日：2009-02-19
申请号：US12192388
申请日：2008-08-15
申请人： Tatsuo MATSUDO , Shinji Himori , Noriaki Imai , Takeshi Ohse , Jun Abe , Takayuki Katsunuma
发明人： Tatsuo MATSUDO , Shinji Himori , Noriaki Imai , Takeshi Ohse , Jun Abe , Takayuki Katsunuma
IPC分类号： H01L21/306 , H01L21/3065 , H01L21/31
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32146 , H01J37/32165
摘要： A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.
摘要翻译：一种等离子体处理装置包括：第一射频（RF）电源单元，用于将第一和第二电极中的至少一个施加于处理气体中产生等离子体，所述第一和第二电极在排气处理中相互面对地设置; 房间。所述第一RF电源单元由控制单元控制，使得所述第一RF功率具有用于产生等离子体的第一幅度的第一相位和所述第一RF功率具有第二幅度以用于基本上不产生等离子体的第二相位以预定间隔交替重复。

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