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1. 发明授权

US4468195A Thermal treatment apparatus 失效
标题翻译：热处理设备
公开(公告)号：US4468195A
公开(公告)日：1984-08-28
申请号：US418252
申请日：1982-09-15
申请人： Tamotsu Sasaki , Tetsuya Takagaki , Kenichi Ikeda
发明人： Tamotsu Sasaki , Tetsuya Takagaki , Kenichi Ikeda
IPC分类号： F27D3/04 , B01J4/00 , F27B5/02 , F27D3/12 , H01L21/22 , F27B1/26 , B65G25/00 , F27D3/00
CPC分类号： F27D3/12 , B01J4/001 , F27B5/02
摘要： The semiconductor device manufacturing process for producing semiconductors (transistor, IC, LSI or the like) needs a large number of thermal treatments for semiconductor wafers, such as thermal oxidation, diffusion, CVD, annealing or the like. The above-mentioned various thermal treatments are conducted by employing thermal treatment apparatus. The thermal treatment apparatus according to the present invention performs thermal treatments for semiconductor wafers, such as thermal oxidation, diffusion, CVD, annealing or the like, and has a soft landing loader capable of loading and unloading a wafer jig housing therein a plurality of semiconductor wafers into and from a process tube of the thermal treatment apparatus with high reliability and a high thermal efficiency as well as capable of automatic control of the movement of the semiconductor wafers in accordance with thermal treatment conditions.
摘要翻译：用于制造半导体（晶体管，IC，LSI等）的半导体器件制造方法需要对半导体晶片进行大量的热处理，例如热氧化，扩散，CVD，退火等。上述各种热处理通过使用热处理装置进行。根据本发明的热处理装置对半导体晶片进行热处理，例如热氧化，扩散，CVD，退火等，并且具有能够装载和卸载其中的多个半导体的晶片夹具的软着陆装载机晶片进入和离开热处理设备的处理管，具有高可靠性和高热效率，并且能够根据热处理条件自动控制半导体晶片的移动。

2. 发明申请

US20120298609A1 CAR EQUIPMENT PROTECTION STRUCTURE FOR RAILCAR 有权
标题翻译： RAILCAR汽车设备保护结构
公开(公告)号：US20120298609A1
公开(公告)日：2012-11-29
申请号：US13376484
申请日：2011-02-08
申请人： Naohiro Yoshida , Toshiyuki Fujimoto , Naoaki Kawakami , Tetsuya Takagaki , Hideki Kumamoto , Seiichiro Yagi , Tomonori Umebayashi
发明人： Naohiro Yoshida , Toshiyuki Fujimoto , Naoaki Kawakami , Tetsuya Takagaki , Hideki Kumamoto , Seiichiro Yagi , Tomonori Umebayashi
IPC分类号： B61G7/10 , B61G11/00
CPC分类号： B61G7/10 , B61G11/08
摘要： A car includes a car equipment protection structure, The car equipment protection structure includes an underframe, couplers and guide members. Each of the guide members is provided on a railcar inner side of an attached flange portion of the underframe to which the couplers are attached. Moreover, the guide members respectively include inclined surfaces, each of which is opposed to at least a part of the coupler. Each of the inclined surfaces is inclined toward the railcar inner side as it extends downward.
摘要翻译：一辆汽车包括汽车设备保护结构，汽车设备保护结构包括底架，联轴器和导向构件。每个引导构件设置在安装有耦合器的底架的附接凸缘部分的轨道车内侧。此外，引导构件分别包括倾斜表面，每个倾斜表面与耦合器的至少一部分相对。每个倾斜面向下延伸时朝向轨道车内侧倾斜。

3. 发明授权

US5001327A Apparatus and method for performing heat treatment on semiconductor wafers 失效
标题翻译：在半导体晶片上进行热处理的装置和方法
公开(公告)号：US5001327A
公开(公告)日：1991-03-19
申请号：US242175
申请日：1988-09-09
申请人： Shigeki Hirasawa , Takuji Torii , Tomoji Watanabe , Toshihiro Komatsu , Kazuo Honma , Akihiko Sakai , Tetsuya Takagaki , Toshiyuki Uchino , Hiroto Nagazomo
发明人： Shigeki Hirasawa , Takuji Torii , Tomoji Watanabe , Toshihiro Komatsu , Kazuo Honma , Akihiko Sakai , Tetsuya Takagaki , Toshiyuki Uchino , Hiroto Nagazomo
IPC分类号： H01L21/00 , H01L21/673 , H01L21/677 , H01L21/687
CPC分类号： H01L21/67751 , H01L21/67109 , H01L21/67313 , Y10S414/135 , Y10S414/138
摘要： An apparatus for containing semiconductor wafers and performing heat treatment thereon. Heaters disposed in a high temperature furnace form at least one heating space therein. An insertion and retrieval aperture is disposed at the lower portion of each heating space for allowing passage of wafers therethrough. Each of the heating spaces is adapted to receive one or two wafers and to provide simultaneous and uniform heat treatment on the wafers.

4. 发明申请

US20070062646A1 Method and apparatus for processing substrates 审中-公开
标题翻译：用于处理衬底的方法和装置
公开(公告)号：US20070062646A1
公开(公告)日：2007-03-22
申请号：US11601697
申请日：2006-11-20
申请人： Unryu Ogawa , Tetsuya Takagaki , Akinori Ishii , Tatsushi Ueda , Takayuki Sato
发明人： Unryu Ogawa , Tetsuya Takagaki , Akinori Ishii , Tatsushi Ueda , Takayuki Sato
IPC分类号： H01L21/306
CPC分类号： H01J37/3244 , H01J2237/335 , H01L21/31116 , H01L21/67069
摘要： A substrate processing apparatus includes a processing chamber and a gas supply line, wherein a natural oxide film removing gas including a first gas activated by a second gas activated by a plasma discharge is supplied to the processing chamber through the gas supply line to remove a natural oxide film on a wafer, and wherein the first gas and the second gas are supplied to the gas supply line along a first direction and a second direction and an angle between the first and the second direction ranges from about 90° to 180°.
摘要翻译：基板处理装置包括处理室和气体供给管线，其中包括由等离子体放电激活的第二气体激活的第一气体的天然氧化物膜去除气体通过气体供给管线供给到处理室，以去除天然气氧化膜，并且其中所述第一气体和所述第二气体沿着第一方向和第二方向被供应到所述气体供应管线，并且所述第一和第二方向之间的角度范围为约90°至180°。

5. 发明授权

US06514425B1 Dry etching gas 有权
标题翻译：干蚀刻气体
公开(公告)号：US06514425B1
公开(公告)日：2003-02-04
申请号：US09297320
申请日：1999-07-02
申请人： Akira Sekiya , Tetsuya Takagaki , Shinsuke Morikawa , Shunichi Yamashita , Tsuyoshi Takaichi , Yasuo Hibino , Yasuhisa Furutaka , Masami Iwasaki , Norifumi Ohtsuka
发明人： Akira Sekiya , Tetsuya Takagaki , Shinsuke Morikawa , Shunichi Yamashita , Tsuyoshi Takaichi , Yasuo Hibino , Yasuhisa Furutaka , Masami Iwasaki , Norifumi Ohtsuka
IPC分类号： C03C1500
CPC分类号： H01L21/3065
摘要： Disclosed is fluorocarbon-based dry etching gas which is free of global environmental problems and a dry etching method using a plasma gas obtained therefrom. The dry etching gas includes a fluorinated ether of carbon, fluorine, hydrogen and oxygen and having 2-6 carbon atoms.
摘要翻译：公开了没有全球环境问题的基于碳氟化合物的干蚀刻气体，以及使用由其获得的等离子体气体的干蚀刻方法。干蚀刻气体包括碳，氟，氢和氧的具有2-6个碳原子的氟化醚。

6. 发明授权

US4282825A Surface treatment device 失效
标题翻译：表面处理装置
公开(公告)号：US4282825A
公开(公告)日：1981-08-11
申请号：US61049
申请日：1979-07-26
申请人： Hiroto Nagatomo , Tetsuya Takagaki , Hisao Seki , Shirou Terasaki , Hitoshi Horimuki
发明人： Hiroto Nagatomo , Tetsuya Takagaki , Hisao Seki , Shirou Terasaki , Hitoshi Horimuki
IPC分类号： G03F7/30 , B05C3/04 , B05C3/10
CPC分类号： G03F7/3021 , Y10S134/902
摘要： A surface treatment device capable of carrying out the surface treatment such as washing or etching of plate-like articles such as semiconductor wafers maintaining high degree of reliability, wherein a surface treating liquid is introduced into a ring-like or a conduit-like treating vessel. The plate-like articles to be treated are moved by a conveyor on a conveyor path having a surface in parallel with the surfaces of the plate-like articles against the stream of the treating liquid in a piece-by-piece manner, so that the surfaces of the plate-like articles are treated, whereby the surfaces of the semiconductor wafers can be desirably treated prior to manufacturing the semiconductor products.
摘要翻译：一种表面处理装置，其能够进行表面处理，例如洗涤或蚀刻保持高可靠性的诸如半导体晶片的板状制品，其中表面处理液体被引入环状或管状的处理容器。待处理的板状物品通过输送机在输送路径上移动，该传送路径的表面与板状物体的表面平行地抵靠处理液体的流逐个方式移动，因此，对板状制品的表面进行处理，由此可以在制造半导体产品之前理想地处理半导体晶片的表面。

7. 发明授权

US08757403B2 Car equipment protection structure for railcar 有权
标题翻译：铁路车辆设备保护结构
公开(公告)号：US08757403B2
公开(公告)日：2014-06-24
申请号：US13376484
申请日：2011-02-08
申请人： Naohiro Yoshida , Toshiyuki Fujimoto , Naoaki Kawakami , Tetsuya Takagaki , Hideki Kumamoto , Seiichiro Yagi , Tomonori Umebayashi
发明人： Naohiro Yoshida , Toshiyuki Fujimoto , Naoaki Kawakami , Tetsuya Takagaki , Hideki Kumamoto , Seiichiro Yagi , Tomonori Umebayashi
IPC分类号： B61G7/14 , B61G7/10
CPC分类号： B61G7/10 , B61G11/08
摘要： A car includes a car equipment protection structure, The car equipment protection structure includes an underframe, couplers and guide members. Each of the guide members is provided on a railcar inner side of an attached flange portion of the underframe to which the couplers are attached. Moreover, the guide members respectively include inclined surfaces, each of which is opposed to at least a part of the coupler. Each of the inclined surfaces is inclined toward the railcar inner side as it extends downward.
摘要翻译：一辆汽车包括汽车设备保护结构，汽车设备保护结构包括底架，联轴器和导向构件。每个引导构件设置在安装有耦合器的底架的附接凸缘部分的轨道车内侧。此外，引导构件分别包括倾斜表面，每个倾斜表面与耦合器的至少一部分相对。每个倾斜面向下延伸时朝向轨道车内侧倾斜。

8. 发明授权

US06383403B1 Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US06383403B1
公开(公告)日：2002-05-07
申请号：US09297070
申请日：1999-04-30
申请人： Akira Sekiya , Toshiro Yamada , Kuniaki Goto , Tetsuya Takagaki
发明人： Akira Sekiya , Toshiro Yamada , Kuniaki Goto , Tetsuya Takagaki
IPC分类号： C03C2300
CPC分类号： H01L21/30604 , H01L21/31116
摘要： A substrate to be etched is subjected to dry etching by using a dry etching gas containing a perfluorocycloolefin while a plasma with a high density region of at least 1010/cm3 is generated. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms are preferably used.
摘要翻译：通过使用含有全氟环烯烃的干式蚀刻气体进行干蚀刻，同时产生具有至少1010 / cm3的高密度区域的等离子体。作为全氟环烷烃，优选使用碳原子数3〜8，特别是4〜6的碳原子。

9. 发明授权

US06322715B1 Gas composition for dry etching and process of dry etching 失效
标题翻译：用于干蚀刻的气体组成和干法蚀刻工艺
公开(公告)号：US06322715B1
公开(公告)日：2001-11-27
申请号：US09297071
申请日：1999-04-30
申请人： Akira Sekiya , Toshiro Yamada , Kuniaki Goto , Tetsuya Takagaki
发明人： Akira Sekiya , Toshiro Yamada , Kuniaki Goto , Tetsuya Takagaki
IPC分类号： C09K1300
CPC分类号： H01L21/3065 , H01L21/31116 , H01L21/32136
摘要： A gaseous composition for dry etching, comprising a perfluorocycloolefin and 1 to 40% by mole, based on the perfluorocycloolefin, of at least one oxygen ingredient selected from oxygen gas and oxygen-containing gaseous compounds. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms, are preferably used.
摘要翻译：一种用于干蚀刻的气体组合物，其包含全氟环烯烃和基于全氟环烯烃1至40摩尔％的至少一种选自氧气和含氧气体化合物的氧成分。作为全氟环烷烃，优选使用碳原子数3〜8，特别是4〜6的碳原子。

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