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1. 发明申请

US20070035725A1 Defect inspection apparatus, sensitivity calibration method for the same, substrate for defect detection sensitivity calibration, and manufacturing method thereof 审中-公开
标题翻译：缺陷检查装置，其灵敏度校准方法，缺陷检测灵敏度校准用基板及其制造方法
公开(公告)号：US20070035725A1
公开(公告)日：2007-02-15
申请号：US11287314
申请日：2005-11-28
申请人： Naohiro Takahashi , Tamihide Yasumoto
发明人： Naohiro Takahashi , Tamihide Yasumoto
IPC分类号： G01N21/00 , G01J1/10
CPC分类号： G01N21/93 , G01N21/9501
摘要： A reference substrate for defect detection sensitivity calibration has: patterns and programmed defective portions which are cone defects with different sizes and are formed at random on a silicon substrate. By using reference substrate for defect detection sensitivity calibration, it is possible to obtain an index, usable in manufacturing management, for determining sensitivity adjustment after a lamp is replaced in an illumination part of a defect inspection apparatus.
摘要翻译：用于缺陷检测灵敏度校准的参考衬底具有：具有不同尺寸的锥形缺陷的图案和编程缺陷部分，并且在硅衬底上随机形成。通过使用用于缺陷检测灵敏度校准的参考基板，可以获得可用于制造管理中用于在缺陷检查装置的照明部分中更换灯后的灵敏度调节的指标。

2. 发明授权

US07948618B2 Defect inspection method and apparatus with a threshold value determination 有权
标题翻译：具有阈值确定的缺陷检查方法和装置
公开(公告)号：US07948618B2
公开(公告)日：2011-05-24
申请号：US11580870
申请日：2006-10-16
申请人： Naohiro Takahashi , Tamihide Yasumoto , Tadamasa Noguchi
发明人： Naohiro Takahashi , Tamihide Yasumoto , Tadamasa Noguchi
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/95607 , G01N2021/8854
摘要： Scattered light from the surface of a sample subjected to the same process as a process for an inspection object is observed, a defect is detected from an intensity of scattered light, and a position of the detected defect and an intensity of scattered light caused by the detected defect are acquired. Defects detected are classified into a group detectable by observing secondary electrons emitted when an electron beam is applied to the surface of the sample and a group not detectable. A decision threshold value of a scattered light intensity for extracting defects to be counted is determined, in accordance with a result of classification by the above steps and the intensity of scattered light caused by the detected defect.
摘要翻译：观察到与经过与检查对象的处理相同的处理的样品的表面的散射光，从散射光的强度，检测到的缺陷的位置和由检测到的缺陷被获取。检测到的缺陷分为通过观察将电子束施加到样品表面时发射的二次电子可检测的组和不可检测的组。根据上述步骤的分类结果和由检测到的缺陷引起的散射光的强度，确定用于提取要计数的缺陷的散射光强度的判定阈值。

3. 发明申请

US20070285653A1 Defect inspection method and apparatus 有权
标题翻译：缺陷检查方法和装置
公开(公告)号：US20070285653A1
公开(公告)日：2007-12-13
申请号：US11580870
申请日：2006-10-16
申请人： Naohiro Takahashi , Tamihide Yasumoto , Tadamasa Noguchi
发明人： Naohiro Takahashi , Tamihide Yasumoto , Tadamasa Noguchi
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/95607 , G01N2021/8854
摘要： (a) Scattered light from the surface of a sample subjected to the same process as a process for an inspection object is observed, a defect is detected from an intensity of scatted light, and a position of the detected defect and an intensity of scattered light caused by the detected defect are acquired.(b) Defects detected at the step (a) are classified into a group detectable by observing secondary electrons emitted when an electron beam is applied to the surface of the sample and a group not detectable. (c) A decision threshold value of a scattered light intensity for extracting defects to be counted is determined, in accordance with a result of classification by the step (b) and the intensity of scattered light caused by the detected defect.
摘要翻译：（a）观察到与经过与检查对象的处理相同的处理的样品的表面的散射光，从散射光的强度，检测到的缺陷的位置和散射光的强度检测缺陷由检测到的缺陷获得。（b）在步骤（a）中检测到的缺陷被分类为可以通过观察将电子束施加到样品表面上发射的二次电子和不可检测的组来检测的组。（c）根据步骤（b）的分类结果和由检测到的缺陷引起的散射光的强度，确定用于提取要计数的缺陷的散射光强度的判定阈值。

4. 发明申请

US20080073523A1 Semiconductor wafer defect inspection method and apparatus 审中-公开
标题翻译：半导体晶圆缺陷检查方法及装置
公开(公告)号：US20080073523A1
公开(公告)日：2008-03-27
申请号：US11600855
申请日：2006-11-17
申请人： Naohiro Takahashi , Tamihide Yasumoto
发明人： Naohiro Takahashi , Tamihide Yasumoto
IPC分类号： G01N23/00
CPC分类号： G01N23/225 , H01J37/21 , H01J37/28 , H01J2237/20228 , H01J2237/216
摘要： A semiconductor wafer whose position information on defects on a surface of the semiconductor wafer is already known, is placed on a stage of an imaging apparatus. Positions in a height direction of a plurality points on the surface of the semiconductor wafer are measured. In accordance with the measured positions in the height direction, the surface is partitioned into a plurality of partial areas. One partial area for which images of defects are still not acquired, is selected from the partial areas. The height of the stage is adjusted so as to set the selected partial area in an auto focusing range. Defects in the selected partial area are imaged with the imaging apparatus to acquire images of defects. Steps between the step of selecting the partial area and the step of acquiring the images of defects are repeated until images of defects in all partial areas are acquired.
摘要翻译：将半导体晶片的表面上的缺陷的位置信息已知的半导体晶片放置在成像装置的台上。测量半导体晶片的表面上的多个点的高度方向的位置。根据高度方向上的测量位置，将表面划分为多个局部区域。从部分区域中选择一个部分区域，其中仍未获取缺陷图像。调整舞台的高度，以便将所选择的部分区域设置在自动对焦范围内。所选部分区域中的缺陷用成像装置成像以获得缺陷图像。重复选择部分区域的步骤和获取缺陷图像的步骤之间的步骤，直到获取所有部分区域中的缺陷的图像。

5. 发明申请

US20070230769A1 Defect inspection apparatus and method of defect inspection 有权
标题翻译：缺陷检查装置及缺陷检查方法
公开(公告)号：US20070230769A1
公开(公告)日：2007-10-04
申请号：US11511398
申请日：2006-08-29
申请人： Tamihide Yasumoto , Naohiro Takahashi
发明人： Tamihide Yasumoto , Naohiro Takahashi
IPC分类号： G06K9/00
CPC分类号： G06K9/68
摘要： A first defect classification section uses a pre-inspection test target as the inspected piece, and classifies the defects, based on results of the defect inspection executed a plurality of times by the defect detection system, into first defects detected constantly in each of the plurality of times of inspection, and into second defects detected only in a part of, but not in the residual part of the plurality of times of inspection.
摘要翻译：第一缺陷分类部使用预检测试对象作为被检查部，并且基于缺陷检测系统多次执行的缺陷检查的结果，将缺陷分类为在多个检测对象中不断检测到的第一缺陷的检查次数，并且检测到仅在多次检查的一部分但不在剩余部分中检测到的第二缺陷。

6. 发明授权

US08538131B2 Defect inspection apparatus and method of defect inspection 有权
标题翻译：缺陷检查装置及缺陷检查方法
公开(公告)号：US08538131B2
公开(公告)日：2013-09-17
申请号：US11511398
申请日：2006-08-29
申请人： Tamihide Yasumoto , Naohiro Takahashi
发明人： Tamihide Yasumoto , Naohiro Takahashi
IPC分类号： G06K9/00
CPC分类号： G06K9/68
摘要： A first defect classification section uses a pre-inspection test target as the inspected piece, and classifies the defects, based on results of the defect inspection executed a plurality of times by the defect detection system, into first defects detected constantly in each of the plurality of times of inspection, and into second defects detected only in a part of, but not in the residual part of the plurality of times of inspection.
摘要翻译：第一缺陷分类部使用预检测试对象作为被检查部，并且基于缺陷检测系统多次执行的缺陷检查的结果，将缺陷分类为在多个检测对象中不断检测到的第一缺陷的检查次数，并且检测到仅在多次检查的一部分但不在剩余部分中检测到的第二缺陷。

7. 发明授权

US07755753B2 Defect inspection apparatus, sensitivity calibration method for the same, substrate for defect detection sensitivity calibration, and manufacturing method thereof 有权
标题翻译：缺陷检查装置，其灵敏度校准方法，缺陷检测灵敏度校准用基板及其制造方法
公开(公告)号：US07755753B2
公开(公告)日：2010-07-13
申请号：US11501755
申请日：2006-08-10
申请人： Naohiro Takahashi , Tamihide Yasumoto
发明人： Naohiro Takahashi , Tamihide Yasumoto
IPC分类号： G01N21/88 , G01F9/00
CPC分类号： G01N21/9501 , G01N21/93 , G01N21/956
摘要： A reference substrate for defect detection sensitivity calibration has: patterns and programmed defective portions which are cone defects with different sizes and are formed at random on a silicon substrate. By using the reference substrate for defect detection sensitivity calibration, it is possible to obtain an index, usable in manufacturing management, for determining sensitivity adjustment after a lamp is replaced in an illumination part of a defect inspection apparatus.
摘要翻译：用于缺陷检测灵敏度校准的参考衬底具有：具有不同尺寸的锥形缺陷的图案和编程缺陷部分，并且在硅衬底上随机形成。通过使用参考基板进行缺陷检测灵敏度校准，可以获得可用于制造管理中的用于在灯被更换在缺陷检查装置的照明部分中的灵敏度调节之后的指标。

8. 发明申请

US20070035726A1 Defect inspection apparatus, sensitivity calibration method for the same, substrate for defect detection sensitivity calibration, and manufacturing method thereof 有权
标题翻译：缺陷检查装置，其灵敏度校准方法，缺陷检测灵敏度校准用基板及其制造方法
公开(公告)号：US20070035726A1
公开(公告)日：2007-02-15
申请号：US11501755
申请日：2006-08-10
申请人： Naohiro Takahashi , Tamihide Yasumoto
发明人： Naohiro Takahashi , Tamihide Yasumoto
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/93 , G01N21/956
摘要： A reference substrate for defect detection sensitivity calibration has: patterns and programmed defective portions which are cone defects with different sizes and are formed at random on a silicon substrate. By using the reference substrate for defect detection sensitivity calibration, it is possible to obtain an index, usable in manufacturing management, for determining sensitivity adjustment after a lamp is replaced in an illumination part of a defect inspection apparatus.
摘要翻译：用于缺陷检测灵敏度校准的参考衬底具有：具有不同尺寸的锥形缺陷的图案和编程缺陷部分，并且在硅衬底上随机形成。通过使用参考基板进行缺陷检测灵敏度校准，可以获得可用于制造管理中的用于在灯被更换在缺陷检查装置的照明部分中的灵敏度调节之后的指标。

9. 发明授权

US07340352B2 Inspecting method, inspecting apparatus, and method of manufacturing semiconductor device 有权
标题翻译：检查方法，检查装置以及制造半导体器件的方法
公开(公告)号：US07340352B2
公开(公告)日：2008-03-04
申请号：US11588319
申请日：2006-10-27
申请人： Naohiro Takahashi , Kiyoshi Irino
发明人： Naohiro Takahashi , Kiyoshi Irino
IPC分类号： G01B5/28 , G06F19/00
CPC分类号： G01N21/9501 , G01N21/9503
摘要： An inspecting method is capable of efficiently inspecting a wafer. According to the inspecting method, the chip area of a wafer is inspected for defects, and based on the results, a defect density D0p of each of peripheral-zone chips in the chip area which are located closely to the peripheral area of the wafer is calculated. A peripheral-zone chip with a high defect density D0p is selected, and an area in the peripheral area which is outward of the selected peripheral-zone chip is inspected for defects. Since only the area in the peripheral area which is located outward of the peripheral-zone chip selected based on the defect density D0p is inspected for defects, the wafer is inspected efficiently.
摘要翻译：检查方法能够有效地检查晶片。根据检查方法，检查晶片的芯片面积的缺陷，并且基于该结果，芯片区域中的每个周边区域芯片的缺陷密度D 0p 位于紧密的位置计算晶圆的外围区域。选择具有高缺陷密度D <0P 的周边区域芯片，并且检查在所选周边区域芯片外部的周边区域中的缺陷。由于仅考虑了基于缺陷密度D 0p <0>的所选外围区域芯片周边区域的区域，故有效地检查晶片。

10. 发明授权

US07064820B2 Surface inspection method and surface inspection system 失效
公开(公告)号：US07064820B2
公开(公告)日：2006-06-20
申请号：US10393833
申请日：2003-03-21
申请人： Hisashi Isozaki , Michihiro Yamazaki , Hiroshi Yoshikawa , Naoto Miki , Hiroyuki Maekawa , Naohiro Takahashi
发明人： Hisashi Isozaki , Michihiro Yamazaki , Hiroshi Yoshikawa , Naoto Miki , Hiroyuki Maekawa , Naohiro Takahashi
IPC分类号： G01N21/00 , G01J4/00
CPC分类号： G01N21/21 , G01N21/94
摘要： A surface inspection method in a surface inspection system which comprises a photodetection unit and a photodetection polarizing angle changing means, comprising the step of receiving a scattered reflection light from a substrate surface where standard particles are coated by changing a photodetection polarizing angle by the photodetection polarizing angle changing means, and the step of performing surface inspection by setting the photodetection polarizing angle to a condition where an S/N ratio of photodetection output is at the highest.

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