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1. 发明申请

US20100212832A1 STAGE DEVICE AND PLASMA TREATMENT APPARATUS 审中-公开
标题翻译：阶段装置和等离子体处理装置
公开(公告)号：US20100212832A1
公开(公告)日：2010-08-26
申请号：US12159387
申请日：2006-12-22
申请人： Tamaki Wakasaki , Takashi Satoh , Keiichi Tanaka , Setsuo Nakajima , Satoshi Mayumi , Yoshinori Nakano
发明人： Tamaki Wakasaki , Takashi Satoh , Keiichi Tanaka , Setsuo Nakajima , Satoshi Mayumi , Yoshinori Nakano
IPC分类号： C23F1/08
CPC分类号： H01L21/68742 , B65G49/064 , B65G49/065 , B65G2249/02 , B65G2249/04 , B65G2249/045 , H01J37/32431 , H01J2237/20 , H01L21/68778
摘要： The present invention provides a stage device which does not generate the difference in level between an upper end of a lift pin and a setting surface of a stage in a state where a substrate to be treated is set on the setting surface of the stage, and provides a plasma treatment apparatus which suppresses the occurrence of uneven treatment by using the stage device as an electrode stage. At the center of an electrode stage (2), a spring type lift pin (20) having elasticity in a direction where the pin moves is provided. When the spring type lift pin (20) is at a storage position, a pin upper end (20a) of the spring type lift pin (20) protrudes above the setting surface (11) of the electrode stage (2). When the substrate (4) to be treated is set and adsorbed on the setting surface (11), the upper end of the lift pin is pressed down to the position that is at the same level as that of the setting surface (11) by a load applied by the substrate (4).
摘要翻译：本发明提供一种舞台装置，其在将被处理基板设置在舞台的设置面上的状态下，不产生升降针的上端与舞台的设定面之间的水平差，提供了一种等离子体处理装置，其通过使用平台装置作为电极台来抑制不均匀处理的发生。在电极台（2）的中心设置弹簧式提升销（20），其在销的移动方向上具有弹性。当弹簧式提升销（20）处于存放位置时，弹簧式提升销（20）的销钉上端（20a）突出在电极台（2）的设置表面（11）的上方。当待处理的基板（4）被设置并吸附在设置表面（11）上时，提升销的上端被按压到与设置表面（11）的位置相同的位置，由基板（4）施加的载荷。

2. 发明申请

US20090229756A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20090229756A1
公开(公告)日：2009-09-17
申请号：US12067808
申请日：2006-09-15
申请人： Setsuo Nakajima , Toshimasa Takeuchi , Junichi Matsuzaki , Satoshi Mayumi , Osamu Nishikawa , Naomichi Saito , Yoshinori Nakano , Makoto Fukushi , Yoshihiko Furuno
发明人： Setsuo Nakajima , Toshimasa Takeuchi , Junichi Matsuzaki , Satoshi Mayumi , Osamu Nishikawa , Naomichi Saito , Yoshinori Nakano , Makoto Fukushi , Yoshihiko Furuno
IPC分类号： C23F1/08
CPC分类号： H01J37/32623 , H01J2237/0206 , H05H1/2406 , H05H2001/2412
摘要： In an atmospheric-pressure plasma processing apparatus, a first metal surface 21a of a first stage portion 21 of a stage 20 is exposed and an object to be processed W composed of a dielectric material is placed on the first metal surface 21a. A second stage portion 22 is disposed on a peripheral edge of the first stage portion 21. A solid dielectric layer 25 is disposed on a second metal 24 of the second stage portion 22. A peripheral portion of the object W is placed on an inner dielectric portion 26 of the solid dielectric layer 25. An electrode 11 generates a run up discharge D2 in a second movement range R2 above the second stage portion 22. Then, the electrode 11 is moved to a first movement range R1 above the first stage portion 21 and generates a regular plasma discharge D1.
摘要翻译：在大气压等离子体处理装置中，阶段20的第一阶段部分21的第一金属表面21a被暴露，并且由第一金属表面21a上放置由电介质材料构成的待处理物体W. 第二级部分22设置在第一级部分21的周缘上。固体电介质层25设置在第二级部分22的第二金属24上。物体W的周边部分被放置在内部电介质固体电介质层25的部分26.电极11在第二级部分22上方的第二移动范围R2中产生上升放电D2。然后，电极11移动到第一级部分21之上的第一移动范围R1 并产生规则的等离子体放电D1。

3. 发明申请

US20120180557A1 SURFACE PROCESSING APPARATUS 审中-公开
标题翻译：表面加工设备
公开(公告)号：US20120180557A1
公开(公告)日：2012-07-19
申请号：US13006249
申请日：2011-01-13
申请人： Yoshinori Nakano , Satoshi Mayumi , Kenichiro Miyasato , Takashi Yoshizawa , Yutaka Miyajima
发明人： Yoshinori Nakano , Satoshi Mayumi , Kenichiro Miyasato , Takashi Yoshizawa , Yutaka Miyajima
IPC分类号： G01B5/28
CPC分类号： G01B5/061 , G01B5/28
摘要： The present invention relates to an apparatus 1 that processes a surface of a substrate 9 to be processed. A processing module 3 is disposed so as to oppose the substrate 9. The processing module 3 is relatively moved with respect to the substrate 9 in a direction of movement parallel to a plane PL. A foreign matter on the surface of the substrate 9 or a raised portion of the surface is detected by the detection mechanism 10. A roller 12, preferably having a circular cylindrical configuration, of the detection mechanism 10 is disposed in the processing module 3. A rotation axis 12a of the roller 12 is parallel to the plane PL and intersects the direction of movement. The roller 12 is supported by a supporter 13 such that the roller 12 can be rotated about the rotation axis 12a. The rotation axis 12a is adapted to be displaceable in a direction intersecting the plane PL. Rotation of the roller 12 is detected by a rotation sensor 21.
摘要翻译：本发明涉及对被处理基板9的表面进行处理的装置1。处理模块3设置成与基板9相对。处理模块3相对于基板9在平行于平面PL的移动方向上相对移动。通过检测机构10检测基板9的表面的异物或表面的隆起部分。检测机构10的优选具有圆筒形构造的辊12设置在处理模块3中。辊12的旋转轴线12a平行于平面PL并与运动方向相交。辊12由支撑件13支撑，使得辊12可以围绕旋转轴线12a旋转。旋转轴12a适于在与平面PL交叉的方向上移动。辊12的旋转由旋转传感器21检测。

4. 发明申请

US20070123041A1 Apparatus and method for surface processing such as plasma processing 审中-公开
标题翻译：等离子体处理等表面处理装置及方法
公开(公告)号：US20070123041A1
公开(公告)日：2007-05-31
申请号：US10561243
申请日：2004-06-24
申请人： Junichiro Anzai , Yoshinori Nakano , Shinichi Kawasaki , Sumio Nakatake , Satoshi Mayumi , Eiji Miyamoto , Toshimasa Takeuchi
发明人： Junichiro Anzai , Yoshinori Nakano , Shinichi Kawasaki , Sumio Nakatake , Satoshi Mayumi , Eiji Miyamoto , Toshimasa Takeuchi
IPC分类号： H01L21/336 , H01L21/44 , C23C16/00
CPC分类号： H01L21/67069 , H01J37/32752
摘要： [PROBLEM TO BE SOLVED]In a surface processing apparatus for spraying a processing gas onto the surface of an object to be processed through a hole-row such as a slit, the surface of the object having a large area can effectively be processed even if the hole-row is short. [MEANS FOR SOLVING]A plurality of electrode plates 11, 12 are arranged, in side-by-side relation, on a processor 1 of a plasma surface processing apparatus M. A slit-like hole-row 10a is formed between the adjacent electrode plates, and a hole-row group 100 is constituted by the side-by-side arranged hole-rows 10a. The object W is moved along the extending direction of each slit 10a by a moving mechanism 4.
摘要翻译： [待解决的问题]在通过诸如狭缝的孔列将处理气体喷射到待处理物体的表面的表面处理设备中，具有大面积的物体的表面即使可以被有效地处理孔排很短。 [装置手段]多个电极板11,12并排设置在等离子体表面处理装置M的处理器1上。狭缝状的孔列10a形成在相邻的电极板和孔列组100由并排布置的孔排10a构成。物体W通过移动机构4沿着每个狭缝10a的延伸方向移动。

5. 发明申请

US20110174775A1 SURFACE PROCESSING APPARATUS 审中-公开
标题翻译：表面加工设备
公开(公告)号：US20110174775A1
公开(公告)日：2011-07-21
申请号：US13120196
申请日：2009-09-16
申请人： Takashi Umeoka , Hirofumi Yagisawa , Satoshi Mayumi , Takashi Satoh , Shunsuke Kunugi
发明人： Takashi Umeoka , Hirofumi Yagisawa , Satoshi Mayumi , Takashi Satoh , Shunsuke Kunugi
IPC分类号： C23F1/00 , C23C16/455 , C23C16/458 , C23C16/52 , C23F1/08
CPC分类号： H01J37/32752 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： To prevent a processing gas from leaking from a processing tank for processing a surface of a substrate and to stabilize flow of the processing gas in a processing space.A substrate 9 is conveyed into the inside of a processing tank 10 through an entrance port 13 by a conveyor 20 and positioned in a processing space 19. A processing gas is supplied to the processing space 19 by a supply system 30, and the substrate 9 is surface processed. Subsequently, the substrate 9 is conveyed out through an exit port 14. Gas inside of the processing tank 10 is exhausted by an exhaust system 40. The exhausting of gas causes gas outside of the processing tank 10 to inflow into the inside of the processing tank 10 through the openings 13, 14 such that an average flow velocity of the inflow gas is at least 0.1 m/sec yet smaller than a velocity that would allow the inflow gas to reach the processing space 19.
摘要翻译：为了防止处理气体从用于处理基板的表面的处理槽泄漏并且稳定处理空间中的处理气体的流动。基板9通过输送机20通过入口13输送到处理槽10的内部，并位于处理空间19中。处理气体通过供应系统30供给处理空间19，基板9 进行表面处理。随后，基板9通过出口14输出。处理槽10内的气体被排气系统40排出。气体的排出导致处理槽10外部的气体流入处理槽的内部通过开口13,14，使得流入气体的平均流速至少为0.1m / sec，但仍小于允许流入气体到达处理空间19的速度。

6. 发明申请

US20110168674A1 PLASMA PROCESSING METHOD AND APPARATUS 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20110168674A1
公开(公告)日：2011-07-14
申请号：US13061749
申请日：2009-09-07
申请人： Satoshi Mayumi , Shunsuke Kunugi , Takashi Satoh , Takashi Umeoka
发明人： Satoshi Mayumi , Shunsuke Kunugi , Takashi Satoh , Takashi Umeoka
IPC分类号： C23F1/00 , C23F1/08 , B01D53/00
CPC分类号： B01D53/229 , B01D2257/2027 , B01D2258/0216 , H01L21/32137
摘要： In atmospheric-pressure plasma processing, fluctuation of a recovery rate or a recovery concentration of a fluorine raw material is restrained to secure stability of processing.Exhaust gas led out from an atmospheric-pressure plasma processing part 2 to an exhaust line 30 is separated by a separation membrane 41 of a separation part 4 into collected gas for a recovered line 50 and release gas for a release line 60. The collected gas is utilized as at least a part of processing gas. At the time of the separation, physical quantity (preferably pressure) of at least two gases of the collected gas, the release gas and the exhaust gas related to the separation are regulated according to flow rate of the processing gas so that either one or both of a recovery rate or a recovery concentration of a fluorine raw material are as desired.
摘要翻译：在大气压等离子体处理中，抑制氟原料的回收率或回收浓度的波动以确保处理的稳定性。从大气压等离子体处理部2引出到排气管30的废气由分离部4的分离膜41分离成用于回收管线50的收集气体，并释放用于脱模管线60的气体。收集的气体被用作处理气体的至少一部分。在分离时，根据处理气体的流量调节收集气体，释放气体和与分离有关的废气中的至少两种气体的物理量（优选压力），使得任一种或两种的氟原料的回收率或回收浓度。

7. 发明申请

US20110209829A1 SURFACE TREATMENT APPARATUS 审中-公开
标题翻译：表面处理设备
公开(公告)号：US20110209829A1
公开(公告)日：2011-09-01
申请号：US13003161
申请日：2009-09-16
申请人： Takashi Umeoka , Hirofumi Yagisawa , Satoshi Mayumi
发明人： Takashi Umeoka , Hirofumi Yagisawa , Satoshi Mayumi
IPC分类号： C23F1/08
CPC分类号： H01J37/32376 , H01J37/3244 , H01J37/32449 , H01J37/32761 , H01J37/32834 , H01L21/3065 , H01L21/67051 , H01L21/6776
摘要： To stabilize a gas flow at an opening which is provided in a treatment housing for surface treatment, and through which an object is carried in or out. An object 9 is carried through a carry-in opening 13 into a treatment housing 10 along a conveying direction and placed in a treatment space 19. A treatment gas is supplied by a supply system 30 into the treatment space 19 and the object 9 is subjected to surface treatment. The object 9 is carried out through a carry-out opening 14. An exhaust system 40 discharges gas from the treatment housing 10. Each of the openings 13 and 14 is defined by a pair of flow-rectifying faces 17 and 18, which face each other with an interval D therebetween in a direction perpendicular to the conveying direction. A depth L of the openings 13 and 14 along the conveying direction is twice or more, and more preferably six or more, of the interval D.
摘要翻译：为了稳定在设置在用于表面处理的处理壳体中的开口处的气体流动，并且物体被携带在外部。物体9沿着输送方向通过进入口13被输送到处理壳体10中并放置在处理空间19中。处理气体由供给系统30供给到处理空间19中，物体9受到进行表面处理。物体9通过进出口14进行。排气系统40从处理壳体10排出气体。开口13和14中的每一个由一对流动整流面17和18限定，每个流动整流面17和18面对每个另一个在与输送方向垂直的方向上具有间隔D。沿着输送方向的开口13,14的深度L是间隔D的两倍以上，更优选为6以上。

8. 发明申请

US20050161317A1 Plasma processing system 失效
标题翻译：等离子体处理系统
公开(公告)号：US20050161317A1
公开(公告)日：2005-07-28
申请号：US10493899
申请日：2003-08-28
申请人： Satoshi Mayumi , Mamoru Hino , Susumu Yashiro , Harukazu Shimizu
发明人： Satoshi Mayumi , Mamoru Hino , Susumu Yashiro , Harukazu Shimizu
IPC分类号： H01J37/32 , H05H1/24 , H05H1/48 , H05F3/00
CPC分类号： H01J37/32009 , H01J37/3244 , H01J37/32541 , H01J37/32752 , H05H1/48 , H05H2001/3478
摘要： A plasma processing apparatus M1 is provided with a processing part 20 for supporting a pair of elongate electrodes 30. The processing part 20 is provided with a plurality of pull bolts 52 (approach-deforming preventers) mutually spacedly arranged in the longitudinal direction of the electrode 30. A head part of each pull bolt 52 is hooked on a rigid plate 33 through a bolt holder 53, and a leg part thereof is screwed in the electrode 30. Owing to this arrangement, the electrodes 30 can be prevented from being deformed by Coulomb's force.
摘要翻译：等离子体处理装置M 1设置有用于支撑一对细长电极30的处理部20。处理部20设置有沿电极30的长度方向相互间隔配置的多个拉拔螺栓52（接近变形防止部）。每个拉螺栓52的头部通过螺栓保持器53钩在刚性板33上，并且其腿部被拧入电极30中。由于这种布置，可以防止电极30因库仑力而变形。

9. 发明申请

US20080131336A1 Plasma Processing Apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US20080131336A1
公开(公告)日：2008-06-05
申请号：US11946703
申请日：2007-11-28
申请人： Satoshi Mayumi , Mamoru Hino , Susumu Yashiro , Harukazu Shimizu
发明人： Satoshi Mayumi , Mamoru Hino , Susumu Yashiro , Harukazu Shimizu
IPC分类号： B01J19/08
CPC分类号： H01J37/32009 , H01J37/3244 , H01J37/32541 , H01J37/32752 , H05H1/48 , H05H2001/3478
摘要： A plasma processing apparatus M1 is provided with a processing part 20 for supporting a pair of elongate electrodes 30. The processing part 20 is provided with a plurality of pull bolts 52 (approach-deforming preventers) mutually spacedly arranged in the longitudinal direction of the electrode 30. A head part of each pull bolt 52 is hooked on a rigid plate 33 through a bolt holder 53, and a leg part thereof is screwed in the electrode 30. Owing to this arrangement, the electrodes 30 can be prevented from being deformed by Coulomb's force.
摘要翻译：等离子体处理装置M 1设置有用于支撑一对细长电极30的处理部分20.处理部分20设置有沿着纵向方向相互间隔布置的多个拉螺栓52（接近变形防止件）电极30.每个拉螺栓52的头部通过螺栓保持器53钩在刚性板33上，并且其腿部被拧在电极30中。由于这种布置，可以防止电极30变形以库仑的力量。

10. 发明申请

US20070002515A1 Plasma processing apparatus and method for manufacturing thereof 审中-公开
标题翻译：等离子体处理装置及其制造方法
公开(公告)号：US20070002515A1
公开(公告)日：2007-01-04
申请号：US10555613
申请日：2004-05-13
申请人： Mamoru Hino , Satoshi Mayumi , Takumi Ito , Tsuyoshi Uehara , Takayuki Ono
发明人： Mamoru Hino , Satoshi Mayumi , Takumi Ito , Tsuyoshi Uehara , Takayuki Ono
IPC分类号： H01L21/683
CPC分类号： H01L21/67069 , H01J37/32357 , H05H1/2406 , H05H2001/2412
摘要： A plasma processing apparatus is provided on the side to be directed to a workpiece W of electrodes 31, 32 with a conductive member 51 through an insulating member 41. The insulating member 41 is sandwiched between the electrodes 31, 32 and the conductive member 51. The dielectric constant and the thickness of the insulating member 41 are established such that the voltage applied to a gap 40b formed between the insulating member 41 and the conductive member 51 becomes smaller than the sparking voltage. Owing to this arrangement, electrical discharge can be prevented from occurring in the gap 40b and thus, the processing quality can be enhanced.
摘要翻译：等离子体处理装置设置在通过绝缘构件41通过导电构件51指向电极31,32的工件W的一侧。绝缘构件41夹在电极31,32和导电构件51之间。建立绝缘构件41的介电常数和厚度，使得施加到形成在绝缘构件41和导电构件51之间的间隙40b的电压变得小于点火电压。由于这种布置，可以防止在间隙40b中发生放电，从而可以提高加工质量。

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