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1. 发明申请

US20060273319A1 Integrated circuit device and manufacturing method thereof 有权
标题翻译：集成电路装置及其制造方法
公开(公告)号：US20060273319A1
公开(公告)日：2006-12-07
申请号：US11442225
申请日：2006-05-30
申请人： Koji Dairiki , Naoto Kusumoto , Takuya Tsurume
发明人： Koji Dairiki , Naoto Kusumoto , Takuya Tsurume
IPC分类号： H01L29/786 , H01L21/46
CPC分类号： H01L27/1266 , H01L27/1214 , H01L2221/68354
摘要： It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.
摘要翻译：本发明的目的在于，制造基板薄型化的集成电路装置时，通过减薄或提高成品率来提高影响生产率的因素，例如电路特性缺陷引起的变化。在衬底的一个表面上形成阻挡层，并且在阻挡层上形成元件，然后从其另一个表面减薄衬底。将基板研磨或抛光的方法或其中通过化学反应蚀刻基板的方法用作薄膜或去除基板的方法。

2. 发明授权

US07820495B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07820495B2
公开(公告)日：2010-10-26
申请号：US11448053
申请日：2006-06-07
申请人： Koji Dairiki , Naoto Kusumoto , Takuya Tsurume
发明人： Koji Dairiki , Naoto Kusumoto , Takuya Tsurume
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L27/1266 , H01L27/1285 , H01L27/1292
摘要： An object is to provide a method for manufacturing a semiconductor device which suppresses an influence on a semiconductor element due to entry of an impurity element, moisture, or the like from outside even in the case of thinning or removing a substrate after forming a semiconductor element over the substrate. A feature is to form an insulating film functioning as a protective film on at least one side of the substrate by performing surface treatment on the substrate, to form a semiconductor element such as a thin film transistor over the insulating film, and to thin the substrate. As the surface treatment, addition of an impurity element or plasma treatment is performed on the substrate. As a means for thinning the substrate, the substrate can be partially removed by performing grinding treatment, polishing treatment, or the like on the other side of the substrate.
摘要翻译：本发明的目的是提供一种用于制造半导体器件的方法，其中，即使在形成半导体元件之后减薄或去除衬底的情况下，也可以抑制由于杂质元素，水分等的进入而对半导体元件的影响在基板上。特征在于，在基板的至少一面上形成作为保护膜的绝缘膜，在基板上进行表面处理，在绝缘膜上形成薄膜晶体管等半导体元件，并使基板。作为表面处理，在基板上进行杂质元素或等离子体处理的添加。作为使基板变薄的方法，可以在基板的另一侧进行研磨处理，研磨处理等来部分除去基板。

3. 发明申请

US20060055014A1 Wireless chip and manufacturing method of the same 失效
标题翻译：无线芯片和制造方法相同
公开(公告)号：US20060055014A1
公开(公告)日：2006-03-16
申请号：US11213997
申请日：2005-08-30
申请人： Takuya Tsurume , Koji Dairiki , Naoto Kusumoto
发明人： Takuya Tsurume , Koji Dairiki , Naoto Kusumoto
IPC分类号： H01L23/02 , H01L23/24
CPC分类号： H01L21/6835 , H01L23/20 , H01L23/22 , H01L23/58 , H01L24/83 , H01L2221/6834 , H01L2221/68363 , H01L2221/68368 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/00011 , H01L2924/01019 , H01L2924/01079 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/30105 , H01L2224/29075 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a new type wireless chip that can be used without being fixed on a product. Specifically, a wireless chip can have a new function by a sealing step. One feature of a wireless chip according to the present invention is to have a structure in which an integrated circuit is sealed by films. In particular, the films sealing the integrated circuit have a hollow structure; therefore the wireless chip can have a new function.
摘要翻译：本发明提供了一种新型无线芯片，可以在不固定在产品上的情况下使用。具体地说，无线芯片可以通过密封步骤具有新的功能。根据本发明的无线芯片的一个特征是具有其中集成电路被膜密封的结构。特别地，密封集成电路的膜具有中空结构; 因此无线芯片可以具有新功能。

4. 发明授权

US07972910B2 Manufacturing method of integrated circuit device including thin film transistor 有权
标题翻译：包括薄膜晶体管的集成电路器件的制造方法
公开(公告)号：US07972910B2
公开(公告)日：2011-07-05
申请号：US11442225
申请日：2006-05-30
申请人： Koji Dairiki , Naoto Kusumoto , Takuya Tsurume
发明人： Koji Dairiki , Naoto Kusumoto , Takuya Tsurume
IPC分类号： H01L21/46
CPC分类号： H01L27/1266 , H01L27/1214 , H01L2221/68354
摘要： It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.
摘要翻译：本发明的目的在于，制造基板薄型化的集成电路装置时，通过减薄或提高成品率来提高影响生产率的因素，例如电路特性缺陷引起的变化。在衬底的一个表面上形成阻挡层，并且在阻挡层上形成元件，然后从其另一个表面减薄衬底。将基板研磨或抛光的方法或其中通过化学反应蚀刻基板的方法用作薄膜或去除基板的方法。

5. 发明申请

US20080265376A1 Ic Chip and Its Manufacturing Method 有权
标题翻译： Ic芯片及其制造方法
公开(公告)号：US20080265376A1
公开(公告)日：2008-10-30
申请号：US11629861
申请日：2005-07-06
申请人： Takuya Tsurume , Koji Dairiki , Naoto Kusumoto
发明人： Takuya Tsurume , Koji Dairiki , Naoto Kusumoto
IPC分类号： H01L29/06 , H01L21/304
CPC分类号： H01L21/67132 , B32B37/226 , B32B38/0004 , B32B2305/342 , B32B2457/14 , H01L21/6835 , H01L21/6836 , H01L21/786 , H01L24/27 , H01L24/29 , H01L24/97 , H01L27/1203 , H01L27/1255 , H01L27/1266 , H01L2221/68313 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68354 , H01L2221/68363 , H01L2221/68377 , H01L2221/68381 , H01L2224/83191 , H01L2924/01006 , H01L2924/01015 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/00
摘要： It is an object of the present invention to decrease a unit cost of an IC chip and to achieve the mass-production of IC chips. According to the present invention, a substrate having no limitation in size, such as a glass substrate, is used instead of a silicon substrate. This achieves the mass-production and the decrease of the unit cost of the IC chip. Further, a thin IC chip is provided by grinding and polishing the substrate such as the glass substrate.
摘要翻译：本发明的目的是降低IC芯片的单位成本并实现IC芯片的批量生产。根据本发明，使用诸如玻璃基板等尺寸没有限制的基板来代替硅基板。这实现了IC芯片的批量生产和单位成本的降低。此外，通过研磨和研磨诸如玻璃基板的基板来提供薄的IC芯片。

6. 发明申请

US20070004102A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070004102A1
公开(公告)日：2007-01-04
申请号：US11448053
申请日：2006-06-07
申请人： Koji Dairiki , Naoto Kusumoto , Takuya Tsurume
发明人： Koji Dairiki , Naoto Kusumoto , Takuya Tsurume
IPC分类号： H01L21/84 , H01L21/31
CPC分类号： H01L27/1266 , H01L27/1285 , H01L27/1292
摘要： An object is to provide a method for manufacturing a semiconductor device which suppresses an influence on a semiconductor element due to entry of an impurity element, moisture, or the like from outside even in the case of thinning or removing a substrate after forming a semiconductor element over the substrate. A feature is to form an insulating film functioning as a protective film on at least one side of the substrate by performing surface treatment on the substrate, to form a semiconductor element such as a thin film transistor over the insulating film, and to thin the substrate. As the surface treatment, addition of an impurity element or plasma treatment is performed on the substrate. As a means for thinning the substrate, the substrate can be partially removed by performing grinding treatment, polishing treatment, or the like on the other side of the substrate.
摘要翻译：本发明的目的是提供一种用于制造半导体器件的方法，其中，即使在形成半导体元件之后减薄或去除衬底的情况下，也可以抑制由于杂质元素，水分等的进入而对半导体元件的影响在基板上。特征在于，在基板的至少一面上形成作为保护膜的绝缘膜，在基板上进行表面处理，在绝缘膜上形成薄膜晶体管等半导体元件，并使基板。作为表面处理，在基板上进行杂质元素或等离子体处理的添加。作为使基板变薄的方法，可以在基板的另一侧进行研磨处理，研磨处理等来部分除去基板。

7. 发明授权

US08698262B2 Wireless chip and manufacturing method of the same 失效
标题翻译：无线芯片和制造方法相同
公开(公告)号：US08698262B2
公开(公告)日：2014-04-15
申请号：US11213997
申请日：2005-08-30
申请人： Takuya Tsurume , Koji Dairiki , Naoto Kusumoto
发明人： Takuya Tsurume , Koji Dairiki , Naoto Kusumoto
IPC分类号： H01L21/14
CPC分类号： H01L21/6835 , H01L23/20 , H01L23/22 , H01L23/58 , H01L24/83 , H01L2221/6834 , H01L2221/68363 , H01L2221/68368 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/00011 , H01L2924/01019 , H01L2924/01079 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/30105 , H01L2224/29075 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a new type wireless chip that can be used without being fixed on a product. Specifically, a wireless chip can have a new function by a sealing step. One feature of a wireless chip according to the present invention is to have a structure in which an integrated circuit is sealed by films. In particular, the films sealing the integrated circuit have a hollow structure; therefore the wireless chip can have a new function.
摘要翻译：本发明提供了一种新型无线芯片，可以在不固定在产品上的情况下使用。具体地说，无线芯片可以通过密封步骤具有新的功能。根据本发明的无线芯片的一个特征是具有其中集成电路被膜密封的结构。特别地，密封集成电路的膜具有中空结构; 因此无线芯片可以具有新功能。

8. 发明授权

US08492246B2 Method of manufacturing integrated circuit device 有权
标题翻译：集成电路器件制造方法
公开(公告)号：US08492246B2
公开(公告)日：2013-07-23
申请号：US13162611
申请日：2011-06-17
申请人： Koji Dairiki , Naoto Kusumoto , Takuya Tsurume
发明人： Koji Dairiki , Naoto Kusumoto , Takuya Tsurume
IPC分类号： H01L21/82
CPC分类号： H01L27/1266 , H01L27/1214 , H01L2221/68354
摘要： It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.
摘要翻译：本发明的目的在于，制造基板薄型化的集成电路装置时，通过减薄或提高成品率来提高影响生产率的因素，例如电路特性缺陷引起的变化。在衬底的一个表面上形成阻挡层，并且在阻挡层上形成元件，然后从其另一个表面减薄衬底。将基板研磨或抛光的方法或其中通过化学反应蚀刻基板的方法用作薄膜或去除基板的方法。

9. 发明授权

US08426293B2 IC chip and its manufacturing method 有权
标题翻译： IC芯片及其制造方法
公开(公告)号：US08426293B2
公开(公告)日：2013-04-23
申请号：US11629861
申请日：2005-07-06
申请人： Takuya Tsurume , Koji Dairiki , Naoto Kusumoto
发明人： Takuya Tsurume , Koji Dairiki , Naoto Kusumoto
IPC分类号： H01L21/301
CPC分类号： H01L21/67132 , B32B37/226 , B32B38/0004 , B32B2305/342 , B32B2457/14 , H01L21/6835 , H01L21/6836 , H01L21/786 , H01L24/27 , H01L24/29 , H01L24/97 , H01L27/1203 , H01L27/1255 , H01L27/1266 , H01L2221/68313 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68354 , H01L2221/68363 , H01L2221/68377 , H01L2221/68381 , H01L2224/83191 , H01L2924/01006 , H01L2924/01015 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/00
摘要： It is an object of the present invention to decrease a unit cost of an IC chip and to achieve the mass-production of IC chips. According to the present invention, a substrate having no limitation in size, such as a glass substrate, is used instead of a silicon substrate. This achieves the mass-production and the decrease of the unit cost of the IC chip. Further, a thin IC chip is provided by grinding and polishing the substrate such as the glass substrate.
摘要翻译：本发明的目的是降低IC芯片的单位成本并实现IC芯片的批量生产。根据本发明，使用诸如玻璃基板等尺寸没有限制的基板来代替硅基板。这实现了IC芯片的批量生产和单位成本的降低。此外，通过研磨和研磨诸如玻璃基板的基板来提供薄的IC芯片。

10. 发明授权

US08361845B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08361845B2
公开(公告)日：2013-01-29
申请号：US12908239
申请日：2010-10-20
申请人： Koji Dairiki , Naoto Kusumoto , Takuya Tsurume
发明人： Koji Dairiki , Naoto Kusumoto , Takuya Tsurume
IPC分类号： H01L21/00 , H01L21/322
CPC分类号： H01L27/1266 , H01L27/1285 , H01L27/1292
摘要： An object is to provide a method for manufacturing a semiconductor device which suppresses an influence on a semiconductor element due to entry of an impurity element, moisture, or the like from outside even in the case of thinning or removing a substrate after forming a semiconductor element over the substrate. A feature is to form an insulating film functioning as a protective film on at least one side of the substrate by performing surface treatment on the substrate, to form a semiconductor element such as a thin film transistor over the insulating film, and to thin the substrate. As the surface treatment, addition of an impurity element or plasma treatment is performed on the substrate. As a means for thinning the substrate, the substrate can be partially removed by performing grinding treatment, polishing treatment, or the like on the other side of the substrate.
摘要翻译：本发明的目的是提供一种用于制造半导体器件的方法，其中，即使在形成半导体元件之后减薄或去除衬底的情况下，也可以抑制由于杂质元素，水分等的进入而对半导体元件的影响在基板上。特征在于，在基板的至少一面上形成作为保护膜的绝缘膜，在基板上进行表面处理，在绝缘膜上形成薄膜晶体管等半导体元件，并使基板。作为表面处理，在基板上进行杂质元素或等离子体处理的添加。作为使基板变薄的方法，可以在基板的另一侧进行研磨处理，研磨处理等来部分除去基板。

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