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1. 发明申请

US20050255711A1 Method for forming underlying insulation film 有权
标题翻译：形成底层绝缘膜的方法
公开(公告)号：US20050255711A1
公开(公告)日：2005-11-17
申请号：US10509371
申请日：2003-03-31
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shiqenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shiqenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
IPC分类号： H01L21/02 , H01L21/28 , H01L21/316 , H01L29/51 , H01L21/469
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31604 , H01L21/31645 , H01L21/31662 , H01L28/56 , H01L29/517 , H01L29/518
摘要： The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.
摘要翻译：基于包含至少含氧原子气体的工艺气体，等离子体照射设置在电子器件基板上的绝缘膜的表面，从而在绝缘膜和电子器件基板之间的界面处形成下面的膜。在绝缘膜和电子器件基板之间的界面处提供了良好的底层膜，从而使得这样形成的底膜能够提高绝缘膜的性能。

2. 发明授权

US07622402B2 Method for forming underlying insulation film 有权
标题翻译：形成底层绝缘膜的方法
公开(公告)号：US07622402B2
公开(公告)日：2009-11-24
申请号：US10509371
申请日：2003-03-31
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
IPC分类号： H01L21/31
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31604 , H01L21/31645 , H01L21/31662 , H01L28/56 , H01L29/517 , H01L29/518
摘要： The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.
摘要翻译：基于包含至少含氧原子气体的工艺气体，等离子体照射设置在电子器件基板上的绝缘膜的表面，从而在绝缘膜和电子器件基板之间的界面处形成下面的膜。在绝缘膜和电子器件基板之间的界面处提供了良好的底层膜，从而使得这样形成的底膜能够提高绝缘膜的性能。

3. 发明授权

US07655574B2 Method of modifying insulating film 有权
标题翻译：绝缘膜改性方法
公开(公告)号：US07655574B2
公开(公告)日：2010-02-02
申请号：US11289330
申请日：2005-11-30
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02112 , H01L21/0234 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31658 , H01L29/518 , H01L29/78
摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.
摘要翻译：通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

4. 发明申请

US20060199398A1 Method of modifying insulating film 有权
标题翻译：绝缘膜改性方法
公开(公告)号：US20060199398A1
公开(公告)日：2006-09-07
申请号：US11289330
申请日：2005-11-30
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
IPC分类号： H01L21/00
CPC分类号： H01L21/02112 , H01L21/0234 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31658 , H01L29/518 , H01L29/78
摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.
摘要翻译：通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

5. 发明授权

US08021987B2 Method of modifying insulating film 有权
标题翻译：绝缘膜改性方法
公开(公告)号：US08021987B2
公开(公告)日：2011-09-20
申请号：US12632131
申请日：2009-12-07
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
IPC分类号： H01L21/38 , H01L21/469
CPC分类号： H01L21/02112 , H01L21/0234 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31658 , H01L29/518 , H01L29/78
摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.
摘要翻译：通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

6. 发明授权

US07041546B2 Film forming method for depositing a plurality of high-k dielectric films 有权
标题翻译：用于沉积多个高k电介质膜的成膜方法
公开(公告)号：US07041546B2
公开(公告)日：2006-05-09
申请号：US10639773
申请日：2003-08-13
申请人： Yuichiro Morozumi , Kazuhide Hasebe , Shigeru Nakajima , Haruhiko Furuya , Dong-Kyun Choi , Takahito Umehara , Katsushige Harada , Tomonori Fujiwara , Hirotake Fujita
发明人： Yuichiro Morozumi , Kazuhide Hasebe , Shigeru Nakajima , Haruhiko Furuya , Dong-Kyun Choi , Takahito Umehara , Katsushige Harada , Tomonori Fujiwara , Hirotake Fujita
IPC分类号： H01L21/8238
CPC分类号： H01L28/56 , H01L21/31612 , H01L21/31637 , H01L21/31645 , H01L28/40
摘要： In a capacitor of an MIM (Metal-Insulator-Metal) structure, a silicon-containing high dielectric film (e.g., a hafnium silicate film) containing a silicon atom, as well as a silicon-free high dielectric film (e.g., a tantalum oxide film) containing no silicon atom is interposed between a lower electrode film and an upper electrode film which are made of metal or metal compound. By adding the silicon-containing high dielectric film, a leak current can be suppressed and the change in capacitor capacity accompanied with the change in applied voltage can be reduced.
摘要翻译：在MIM（金属 - 绝缘体 - 金属）结构的电容器中，含有硅原子的含硅高电介质膜（例如，硅酸铪膜）以及无硅高介电膜（例如，钽不含硅原子的氧化膜插入由金属或金属化合物制成的下电极膜和上电极膜之间。通过添加含硅高介电膜，可以抑制泄漏电流，并且可以减少伴随施加电压变化的电容器容量的变化。

7. 发明申请

US20050142716A1 Method of manufacturing semiconductor device, film-forming apparatus, and storage medium 有权
标题翻译：制造半导体器件，成膜设备和存储介质的方法
公开(公告)号：US20050142716A1
公开(公告)日：2005-06-30
申请号：US10976320
申请日：2004-10-29
申请人： Shigeru Nakajima , Dong-Kyun Choi , Tomonori Fujiwara , Hiroaki Ikegawa , Genji Nakamura
发明人： Shigeru Nakajima , Dong-Kyun Choi , Tomonori Fujiwara , Hiroaki Ikegawa , Genji Nakamura
IPC分类号： H01L21/336 , H01L21/28 , H01L29/51 , H01L29/78
CPC分类号： H01L29/513 , H01L21/28194 , H01L29/517 , H01L29/78
摘要： In a decompressed atmosphere and a heating atmosphere, a vapor of a hafnium organic compound is reacted with, e.g., a disilane gas in a reacting vessel, so as to form a hafnium silicate film on a silicon film. By reacting a dichlorosilane gas with a dinitrogen oxide gas, a silicon oxide film as a barrier layer is laminated on the hafnium silicate film. A polysilicon film as a gate electrode is formed on the silicon oxide film.
摘要翻译：在减压气氛和加热气氛中，使铪有机化合物的蒸气与例如反应容器中的乙硅烷气体反应，以在硅膜上形成硅酸铪膜。通过使二氯硅烷气体与二氧化氮气体反应，将作为阻挡层的氧化硅膜层压在硅酸铪膜上。在氧化硅膜上形成作为栅电极的多晶硅膜。

8. 发明申请

US20060216953A1 Method of forming film and film forming apparatus 审中-公开
标题翻译：薄膜成膜装置的形成方法
公开(公告)号：US20060216953A1
公开(公告)日：2006-09-28
申请号：US10552468
申请日：2004-04-08
申请人： Shigeru Nakajima , Dong-Kyun Choi , Tomonori Fujiwara , Hiroaki Ikegawa , Genji Nakamura
发明人： Shigeru Nakajima , Dong-Kyun Choi , Tomonori Fujiwara , Hiroaki Ikegawa , Genji Nakamura
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02148 , C23C16/401 , H01L21/02211 , H01L21/02271 , H01L21/31645
摘要： The object of the present invention is to increase the crystallization temperature of a hafnium compound film which can be effectively used as a high dielectric constant film of a gate oxide film of a MOSFET, for example. A hafnium silicate film is deposited on a substrate by reacting a vapor of a hafnium organic compound with a monosilane gas or a disilane gas in a reaction vessel in a heated vacuum atmosphere. Due to the crystallization restraining effect of silicon, the thus obtained film has a higher crystallization temperature. In another embodiment of the present invention, an oxygen-containing hafnium compound film is annealed in a heated ammonia gas atmosphere. The annealing also increase the crystallization temperature of the oxygen-containing hafnium compound film.
摘要翻译：本发明的目的是提高可以有效地用作MOSFET的栅极氧化膜的高介电常数膜的铪化合物膜的结晶温度。通过使铪有机化合物的蒸气与甲硅烷气体或乙硅烷气体在加热的真空气氛中在反应容器中反应，将硅酸铪膜沉积在基材上。由于硅的结晶抑制效果，所得到的膜具有较高的结晶温度。在本发明的另一个实施方案中，将含氧铪化合物膜在加热的氨气气氛中退火。退火还增加含氧铪复合膜的结晶温度。

9. 发明授权

US07084023B2 Method of manufacturing semiconductor device, film-forming apparatus, and storage medium 有权
标题翻译：制造半导体器件，成膜设备和存储介质的方法
公开(公告)号：US07084023B2
公开(公告)日：2006-08-01
申请号：US10976320
申请日：2004-10-29
申请人： Shigeru Nakajima , Dong-Kyun Choi , Tomonori Fujiwara , Hiroaki Ikegawa , Genji Nakamura
发明人： Shigeru Nakajima , Dong-Kyun Choi , Tomonori Fujiwara , Hiroaki Ikegawa , Genji Nakamura
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/513 , H01L21/28194 , H01L29/517 , H01L29/78
摘要： In a decompressed atmosphere and a heating atmosphere, a vapor of a hafnium organic compound is reacted with, e.g., a disilane gas in a reacting vessel, so as to form a hafnium silicate film on a silicon film. By reacting a dichlorosilane gas with a dinitrogen oxide gas, a silicon oxide film as a barrier layer is laminated on the hafnium silicate film. A polysilicon film as a gate electrode is formed on the silicon oxide film.
摘要翻译：在减压气氛和加热气氛中，使铪有机化合物的蒸气与例如反应容器中的乙硅烷气体反应，以在硅膜上形成硅酸铪膜。通过使二氯硅烷气体与二氧化氮气体反应，将作为阻挡层的氧化硅膜层压在硅酸铪膜上。在氧化硅膜上形成作为栅电极的多晶硅膜。

10. 发明授权

US08124181B2 Oxidation method providing parallel gas flow over substrates in a semiconductor process 有权
标题翻译：在半导体工艺中在衬底上提供平行气流的氧化方法
公开(公告)号：US08124181B2
公开(公告)日：2012-02-28
申请号：US11907968
申请日：2007-10-18
申请人： Kazuhide Hasebe , Takehiko Fujita , Shigeru Nakajima , Jun Ogawa
发明人： Kazuhide Hasebe , Takehiko Fujita , Shigeru Nakajima , Jun Ogawa
IPC分类号： C23C16/40
CPC分类号： H01L21/67109 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidation method includes supplying oxidizing and deoxidizing gases to a process field by spouting the gases in lateral directions respectively from first and second groups of gas spouting holes. Each group of holes is disposed adjacent to target substrates on one side of the process field and arrayed over a length corresponding to the process field in a vertical direction. Gases are exhausted through an exhaust port disposed opposite to the first and second groups of gas spouting holes with the process field interposed therebetween and present over a length corresponding to the process field in the vertical direction. This causes the gases to flow along the surfaces of the target substrates, thus forming gas flows parallel with the target substrates. The process field is heated by a heater disposed around the process container to generate oxygen radicals and hydroxyl group radicals within the process field.
摘要翻译：氧化方法包括通过分别从第一和第二组气体喷射孔喷射气体在横向方向向工艺场提供氧化和脱氧气体。每组孔与过程场一侧的目标衬底相邻设置，并且在垂直方向上排列在对应于过程场的长度上。气体通过与第一和第二组气体喷射孔相对设置的排气口排出，其中过程场介于它们之间并且在垂直方向上存在超过对应于过程场的长度。这使得气体沿着目标基板的表面流动，从而形成与目标基板平行的气体流。工艺场由设置在加工容器周围的加热器加热，以在工艺场内产生氧自由基和羟基自由基。

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