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1. 发明授权

US09157146B2 Method for depositing silicon carbide film 有权
标题翻译：沉积碳化硅膜的方法
公开(公告)号：US09157146B2
公开(公告)日：2015-10-13
申请号：US13700695
申请日：2011-08-02
申请人： Takuya Sugawara , Hikaru Aoshima , Yousong Jiang , Ichiro Shiono , Ekishu Nagae
发明人： Takuya Sugawara , Hikaru Aoshima , Yousong Jiang , Ichiro Shiono , Ekishu Nagae
IPC分类号： C23C14/34 , C23C14/35 , C23C14/00 , C23C14/06 , C23C14/58 , G02B1/10
CPC分类号： C23C14/35 , C23C14/0078 , C23C14/0635 , C23C14/3464 , C23C14/5826 , G02B1/10
摘要： A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided. The film can be formed safely and efficiently in a short time and on a low heat resistance substrate. The method can include depositing a silicon carbide thin film on a moving substrate by using a film formation apparatus configured such that a reaction process region and film formation process regions are arranged spatially separated from one another in a vacuum container. Silicon targets can be sputtered in one region and carbon targets can be sputtered in another region. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate. Next, in another region, the interlayer thin film can be exposed to plasma generated in an atmosphere of a mixed gas including inert gas and hydrogen.
摘要翻译：提供了适用于光学用途的具有高透射率和高膜强度的碳化硅薄膜的成膜方法。该膜可以在短时间内和低耐热性基材上安全有效地形成。该方法可以包括通过使用成膜装置在移动的基板上沉积碳化硅薄膜，所述成膜装置被配置成使得反应处理区域和成膜处理区域在真空容器中彼此空间上分开布置。硅靶可以在一个区域溅射，并且碳靶可以在另一个区域溅射。由此，在基板上形成含有硅和碳的层间薄膜。接下来，在另一区域中，层间薄膜可以暴露于在包含惰性气体和氢气的混合气体的气氛中产生的等离子体。

2. 发明申请

US20110151247A1 METHOD FOR DEPOSITING FILM AND OIL-REPELLENT SUBSTRATE 有权
标题翻译：沉积薄膜和油墨基质的方法
公开(公告)号：US20110151247A1
公开(公告)日：2011-06-23
申请号：US13059145
申请日：2009-08-24
申请人： Ichiro Shiono , Ekishu Nagae , Yousong Jiang , Takuya Sugawara
发明人： Ichiro Shiono , Ekishu Nagae , Yousong Jiang , Takuya Sugawara
IPC分类号： B32B5/00 , B05D3/06 , C23C14/46
CPC分类号： C23C16/56 , C03C17/42 , C03C2217/76 , C03C2217/77 , C03C2218/32 , C09D1/00 , C09D5/00 , C23C14/0652 , C23C14/08 , C23C14/12 , C23C14/22 , C23C14/221 , C23C14/24 , C23C14/541 , C23C14/5833 , Y10T428/265
摘要： The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.
摘要翻译：本发明的膜的沉积方法包括在基板101的表面上沉积具有高于基板101的硬度的硬度的第一膜103的第一膜沉积步骤，在基板101的表面上照射具有能量的颗粒的第一照射步骤第一膜103，以及在经受第一照射步骤的第一膜103的表面上沉积防油膜105的第二膜沉积步骤。根据本发明，可以提供一种用于沉积能够生产防油衬底的膜的方法，该方法包括具有实际足够水平的耐磨性的拒油膜。

3. 发明授权

US09365920B2 Method for depositing film 有权
标题翻译：沉积膜的方法
公开(公告)号：US09365920B2
公开(公告)日：2016-06-14
申请号：US13061624
申请日：2009-08-24
申请人： Ichiro Shiono , Ekishu Nagae , Yousong Jiang , Takuya Sugawara
发明人： Ichiro Shiono , Ekishu Nagae , Yousong Jiang , Takuya Sugawara
IPC分类号： B05D3/00 , B05D3/06 , C23C14/02 , C03C17/42 , C03C19/00 , C23C14/34 , C23C14/56 , C23C14/00 , C23C14/50 , H01J37/34 , H01J37/32
CPC分类号： C23C14/022 , C03C17/42 , C03C19/00 , C03C2217/77 , C23C14/0078 , C23C14/3464 , C23C14/505 , C23C14/568 , H01J37/321 , H01J37/32422 , H01J37/32513 , H01J37/32633 , H01J37/32761 , H01J37/34
摘要： The method for depositing a film of the present invention comprises the first irradiation step of irradiating particles having energy on a surface of a substrate 101, the first film deposition step of depositing a first film 103 on the surface of the substrate 101 subjected to the first irradiation step by using a dry process, and the second film deposition step of depositing a second film 105 having oil repellency on a surface of the first film 103. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.
摘要翻译：本发明的膜的沉积方法包括：在基板101的表面上照射具有能量的颗粒的第一照射步骤，第一膜沉积步骤，在经受第一次的基板101的表面上沉积第一膜103 通过使用干法进行照射步骤，以及第二膜沉积步骤，在第一膜103的表面上沉积具有拒油性的第二膜105.根据本发明，一种用于沉积膜的方法，可以提供包括具有实际上足够水平的耐磨性的防油膜的防水衬底。

4. 发明授权

US09315415B2 Method for depositing film and oil-repellent substrate 有权
标题翻译：沉积薄膜和防油衬底的方法
公开(公告)号：US09315415B2
公开(公告)日：2016-04-19
申请号：US13059145
申请日：2009-08-24
申请人： Ichiro Shiono , Ekishu Nagae , Yousong Jiang , Takuya Sugawara
发明人： Ichiro Shiono , Ekishu Nagae , Yousong Jiang , Takuya Sugawara
IPC分类号： C23C14/08 , C23C14/24 , C23C14/58 , B05D5/08 , C03C17/42 , C23C14/22 , C23C14/06 , C23C14/12 , C23C14/54
CPC分类号： C23C16/56 , C03C17/42 , C03C2217/76 , C03C2217/77 , C03C2218/32 , C09D1/00 , C09D5/00 , C23C14/0652 , C23C14/08 , C23C14/12 , C23C14/22 , C23C14/221 , C23C14/24 , C23C14/541 , C23C14/5833 , Y10T428/265
摘要： The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.
摘要翻译：本发明的膜的沉积方法包括在基板101的表面上沉积具有高于基板101的硬度的硬度的第一膜103的第一膜沉积步骤，在基板101的表面上照射具有能量的颗粒的第一照射步骤第一膜103，以及在经受第一照射步骤的第一膜103的表面上沉积防油膜105的第二膜沉积步骤。根据本发明，可以提供一种用于沉积能够生产防油衬底的膜的方法，该方法包括具有实际足够水平的耐磨性的拒油膜。

5. 发明申请

US20110151138A1 METHOD FOR DEPOSITING FILM 有权
标题翻译：沉积膜的方法
公开(公告)号：US20110151138A1
公开(公告)日：2011-06-23
申请号：US13061624
申请日：2009-08-24
申请人： Ichiro Shiono , Ekishu Nagae , Yousong Jiang , Takuya Sugawara
发明人： Ichiro Shiono , Ekishu Nagae , Yousong Jiang , Takuya Sugawara
IPC分类号： B05D3/06 , C23C14/34
CPC分类号： C23C14/022 , C03C17/42 , C03C19/00 , C03C2217/77 , C23C14/0078 , C23C14/3464 , C23C14/505 , C23C14/568 , H01J37/321 , H01J37/32422 , H01J37/32513 , H01J37/32633 , H01J37/32761 , H01J37/34
摘要： The method for depositing a film of the present invention comprises the first irradiation step of irradiating particles having energy on a surface of a substrate 101, the first film deposition step of depositing a first film 103 on the surface of the substrate 101 subjected to the first irradiation step by using a dry process, and the second film deposition step of depositing a second film 105 having oil repellency on a surface of the first film 103. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.
摘要翻译：本发明的膜的沉积方法包括：在基板101的表面上照射具有能量的颗粒的第一照射步骤，第一膜沉积步骤，在经受第一次的基板101的表面上沉积第一膜103 通过使用干法进行照射步骤，以及第二膜沉积步骤，在第一膜103的表面上沉积具有拒油性的第二膜105.根据本发明，一种用于沉积膜的方法，可以提供包括具有实际上足够水平的耐磨性的防油膜的防水衬底。

6. 发明授权

US09422620B2 Translucent hard thin film 有权
标题翻译：半透明硬薄膜
公开(公告)号：US09422620B2
公开(公告)日：2016-08-23
申请号：US13700686
申请日：2012-02-16
申请人： Takuya Sugawara , Hikaru Aoshima , Yousong Jiang , Ichiro Shiono
发明人： Takuya Sugawara , Hikaru Aoshima , Yousong Jiang , Ichiro Shiono
IPC分类号： C03C17/34 , C23C14/06 , C23C14/10 , C23C14/00 , C23C28/00 , C23C28/04
CPC分类号： C23C14/0635 , C03C17/3441 , C03C2217/78 , C23C14/0078 , C23C14/10 , C23C28/04 , C23C28/42 , Y10T428/24975
摘要： A translucent hard thin film having high transmissivity and film strength is provided. The translucent hard thin film can be composed of a laminated film formed on a substrate surface, wherein the laminated film has a superlattice structure obtained by stacking a plurality of SiO2 layer and SiC layers alternately and the entire film thickness is 3000 nm or more. A film thickness per layer is 5 to 30 nm in a SiC layer and 30% to 60% of that of the SiO2 layer in a SiC layer.
摘要翻译：提供透光性和膜强度高的半透明硬质薄膜。半透明硬质薄膜可以由形成在基板表面上的层叠膜构成，其中层叠膜具有通过交替堆叠多个SiO 2层和SiC层而获得的超晶格结构，并且整个膜厚度为3000nm以上。 SiC层中的每层的膜厚度为5〜30nm，SiC层的SiO 2层的膜厚为30〜60％。

7. 发明申请

US20110168544A1 Manufacturing Method of Optical Filter 审中-公开
标题翻译：光滤波器制造方法
公开(公告)号：US20110168544A1
公开(公告)日：2011-07-14
申请号：US13120764
申请日：2009-09-14
申请人： Ichiro Shiono , Toshihiko Sato , Yasuhisa Togashi , Yousong Jiang , Takuya Sugawara
发明人： Ichiro Shiono , Toshihiko Sato , Yasuhisa Togashi , Yousong Jiang , Takuya Sugawara
IPC分类号： C23C14/34 , B05D3/10 , B05D5/06
CPC分类号： C23C14/0078 , C03C17/001 , C03C2218/31 , H01J37/32082
摘要： [Object]To provide a manufacturing method of an optical filter having favorable film quality by removing a foreign substance adhered onto a surface of a substrate by cleaning before a thin film is formed.[Solution] By performing a cleaning step P1 for cleaning a substrate S by means of a solution including water, a pre-treatment step P3 for plasma-treating a surface of the substrate S cleaned in the cleaning step P1 by plasma of an oxygen gas, and a thin film formation step (P4, P5) for forming the thin film on the surface of the substrate S plasma-treated in the pre-treatment step P3, the foreign substance adhered onto the surface of the substrate can be effectively removed. In the pre-treatment step P3, only the oxygen gas is introduced to an area where the plasma is generated, and a flow rate of the oxygen gas to be introduced is greater than a flow rate of the oxygen gas introduced in the thin film formation step. Thus, the foreign substance adhered onto the surface of the substrate S through OH bonds in the cleaning step is effectively eliminated before the thin film formation step (P4, P5), so that generation of a film absent part is prevented.
摘要翻译：通过在形成薄膜之前通过清洗除去附着在基板的表面上的异物，提供具有良好的膜质量的滤光器的制造方法。 [解决方案]通过执行用于通过包括水的溶液清洁基板S的清洁步骤P1，用于等离子体处理在清洁步骤P1中清洁的基板S的表面的预处理步骤P3通过氧气等离子体以及用于在预处理步骤P3中等离子体处理的基板S的表面上形成薄膜的薄膜形成步骤（P4，P5），可以有效地去除附着在基板表面上的异物。在预处理工序P3中，仅将氧气导入到产生等离子体的区域，导入氧气的流量比导入薄膜层的氧气的流量大步。因此，在薄膜形成工序（P4，P5）之前，在清洗工序中通过OH键附着在基板S的表面上的异物被有效地消除，从而防止产生不存在膜的部件。

8. 发明授权

US07622402B2 Method for forming underlying insulation film 有权
标题翻译：形成底层绝缘膜的方法
公开(公告)号：US07622402B2
公开(公告)日：2009-11-24
申请号：US10509371
申请日：2003-03-31
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
IPC分类号： H01L21/31
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31604 , H01L21/31645 , H01L21/31662 , H01L28/56 , H01L29/517 , H01L29/518
摘要： The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.
摘要翻译：基于包含至少含氧原子气体的工艺气体，等离子体照射设置在电子器件基板上的绝缘膜的表面，从而在绝缘膜和电子器件基板之间的界面处形成下面的膜。在绝缘膜和电子器件基板之间的界面处提供了良好的底层膜，从而使得这样形成的底膜能够提高绝缘膜的性能。

9. 发明申请

US20080274370A1 Method for Forming Insulation Film 失效
标题翻译：绝缘膜成型方法
公开(公告)号：US20080274370A1
公开(公告)日：2008-11-06
申请号：US12145971
申请日：2008-06-25
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama
IPC分类号： B32B15/00 , B32B15/20
CPC分类号： H01L21/022 , H01L21/0214 , H01L21/02164 , H01L21/02326 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L21/3165 , H01L21/3185 , Y10T428/12736 , Y10T428/12806
摘要： In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.
摘要翻译：在涉及在电子器件用基板上形成绝缘膜的工序中，通过进行两个以上的工序来形成绝缘膜，该步骤用于调整在同一操作中涉及的绝缘膜的特性原理。通过进行诸如清洁，氧化，氮化和薄膜厚度减少的处理，同时避免暴露在空气中，可以实现具有高清洁度的绝缘膜的形成。此外，在相同的工作原理下进行关于形成绝缘膜的各种步骤可以实现设备形式的简化，并且可以以高效率形成具有优异性能的绝缘膜。

10. 发明申请

US20070218687A1 Process for producing materials for electronic device 审中-公开
标题翻译：电子设备材料生产工艺
公开(公告)号：US20070218687A1
公开(公告)日：2007-09-20
申请号：US11798029
申请日：2007-05-09
申请人： Takuya Sugawara , Toshio Nakanishi , Shigenori Ozaki , Seiji Matsuyama , Shigemi Murakawa , Yoshihide Tada
发明人： Takuya Sugawara , Toshio Nakanishi , Shigenori Ozaki , Seiji Matsuyama , Shigemi Murakawa , Yoshihide Tada
IPC分类号： H01L21/44
CPC分类号： H01L21/28185 , C23C16/401 , C23C16/402 , C23C16/56 , H01J37/3222 , H01J37/3244 , H01L21/02164 , H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L21/02271 , H01L21/0234 , H01L21/28194 , H01L21/28202 , H01L21/3105 , H01L21/31604 , H01L21/31612 , H01L21/31658 , H01L21/31662 , H01L21/76801 , H01L21/76826 , H01L21/76828 , H01L29/40114 , H01L29/517 , H01L29/518
摘要： A process for producing an electronic device material of a high quality MOS-type semiconductor comprising an insulating layer and a semiconductor layer excellent in the electrical characteristic. The process includes: a step of CVD-treating a substrate to be processed comprising single-crystal silicon as a main component, to thereby form an insulating layer; and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots, to thereby modify the insulating film by using the thus generated plasma.
摘要翻译：一种制造高品质MOS型半导体的电子器件材料的方法，包括绝缘层和电特性优异的半导体层。该方法包括：将包含单晶硅作为主要成分的待处理衬底进行CVD处理，从而形成绝缘层; 以及通过经由具有多个狭缝的平面天线构件基于微波照射从处理气体产生的等离子体曝光被处理基板的步骤，由此通过使用由此产生的等离子体来修正绝缘膜。

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