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1. 发明授权

US06228791B1 Solid catalyst component and catalyst for olefin polymerization 失效
标题翻译：固体催化剂组分和烯烃聚合催化剂
公开(公告)号：US06228791B1
公开(公告)日：2001-05-08
申请号：US09331894
申请日：1999-07-06
申请人： Takuo Kataoka , Masayoshi Saito , Isa Nishiyama
发明人： Takuo Kataoka , Masayoshi Saito , Isa Nishiyama
IPC分类号： B01J2100
CPC分类号： C08F10/00 , C08F4/6567 , C08F4/6555 , C08F4/651 , C08F4/6465
摘要： The present invention is a solid catalyst component for polymerization of olefins prepared by contacting a magnesium compound, a tetravalent halogen-containing titanium compound, a diester of an aromatic dicarboxylic acid, an aromatic hydrocarbon and an organic aluminum compound containing a hydroxyl group represented by the following general formula (R1CO2)mAl(OH)3-m or aluminum hydroxide. The catalyst for polymerization of olefins comprising said solid catalyst component, an organic aluminum compound represented by the general formula R2pAlQ3-p and an organic silicon compound represented by the general formula R3qSi(OR4)4-q can retard the rate of forming a polymer having a low molecular weight or a low stereoregular polymer which is soluble in a polymerization solvent in slurry polymerization and can obtain a high stereoregular polymer in a high yield, and also can obtain a copolymer having an excellent property in a high yield in the copolymerization of olefins.
摘要翻译：本发明是通过使镁化合物，四价含卤素的钛化合物，芳族二羧酸的二酯，芳香族烃和含有羟基的有机铝化合物接触而制备的烯烃聚合用固体催化剂成分遵循通式（R1CO2）mA1（OH）3-m或氢氧化铝。包含所述固体催化剂组分，由通式R2pAlQ3-p表示的有机铝化合物和由通式R3qSi（OR4）4-q表示的有机硅化合物）的烯烃聚合催化剂可以延迟形成具有低分子量或低立构规整性聚合物，其在淤浆聚合中可溶于聚合溶剂，并且可以高产率获得高立构规整性聚合物，并且还可以获得在烯烃共聚合中具有优异性能的共聚物。

2. 发明授权

US06090903A Propylene homopolymer 失效
标题翻译：丙烯均聚物
公开(公告)号：US06090903A
公开(公告)日：2000-07-18
申请号：US952962
申请日：1997-12-04
申请人： Takuo Kataoka , Masayoshi Saito
发明人： Takuo Kataoka , Masayoshi Saito
IPC分类号： C08F4/646 , C08F4/655 , C08F4/656 , C08F4/658 , C08F110/06
CPC分类号： C08F110/06 , C08F4/6465 , C08F4/6555 , C08F4/6567
摘要： A propylene homopolymer having a high stereo-regularity and an excellent processability during sheet or film formation, characterized in that it exhibits a melt flow rate (MFR) of from 0.1 to 20 g/10 min., a xylene-soluble component content of not more than 6% by weight and an isoblock content [IB] of at least 3 mol % as determined by the following equation (1) from Pmmmr, Pmmrr and Pmrrm, which are absorption intensities attributed to isoblock chain in xylene-insoluble component by .sup.13 C-NMR spectrum:[IB]=[Pmmmr]+[Pmmrr]+[Pmrrm] (1)wherein [Pmmmr], [Pmmrr] and [Pmrrm] are the relative intensity ratio (mol %) of Pmmmr, Pmmrr and Pmrrm, respectively, which are absorption intensities attributed to isoblock chain.
摘要翻译： PCT No.PCT / JP97 / 01097 Sec。 371 1997年12月4日第 102（e）日期1997年12月4日PCT 1997年3月31日PCT公布。公开号WO97 / 38030 日期1997年10月16日一种丙烯均聚物，其具有高的立体规整性，并且在片或膜形成过程中具有优异的加工性能，其特征在于其熔体流动速率（MFR）为0.1至20g / 10min，由Pmmmr，Pmmrr和Pmrrm的下列等式（1）确定的可溶组分含量不超过6重量％，并且具有至少3摩尔％的异丁烯含量[IB]为归因于二甲苯中的异链段的吸收强度通过13 C-NMR光谱分析不溶成分：[IB] = [Pmmmr] + [Pmmrr] + [Pmrrm]（1）其中[Pmmmr]，[Pmmrr]和[Pmrrm]是Pmmmr的相对强度比（mol％），Pmmrr和Pmrrm，分别是归因于异链段的吸收强度。

3. 发明授权

US07968254B2 Photomask reticle for use in projection exposure, and manufacturing methods therefor 有权
标题翻译：用于投影曝光的光掩模掩模及其制造方法
公开(公告)号：US07968254B2
公开(公告)日：2011-06-28
申请号：US12078564
申请日：2008-04-01
申请人： Masayoshi Saito
发明人： Masayoshi Saito
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/36
摘要： A photomask reticle for use in projection exposure to form a resist pattern on a workable film formed over a semiconductor substrate, includes a first area in which a light shield is formed, a second area formed around said first area, a third area formed around said second area; and a fourth area formed around said third area, the areas being formed over a substrate, a relationship between transmissivities of said areas being second area transmissivity>fourth area transmissivity>third area transmissivity>first area transmissivity.
摘要翻译：一种用于投影曝光以形成在半导体衬底上形成的可加工膜上的抗蚀剂图案的光掩模掩模版包括形成有遮光罩的第一区域，围绕所述第一区域形成的第二区域，围绕所述第一区域形成的第三区域第二区以及围绕所述第三区域形成的第四区域，所述区域形成在衬底上，所述区域的透射率之间的关系是第二区域透射率>第四区域透射率>第三区域透射率>第一区域透射率。

4. 发明申请

US20080268381A1 Pattern forming method performing multiple exposure so that total amount of exposure exceeds threshold 审中-公开
标题翻译：图案形成方法进行多次曝光，使得总曝光量超过阈值
公开(公告)号：US20080268381A1
公开(公告)日：2008-10-30
申请号：US12081765
申请日：2008-04-21
申请人： Masayoshi Saito , Shinji Ohara
发明人： Masayoshi Saito , Shinji Ohara
IPC分类号： G03F7/20
CPC分类号： H01L21/0274 , G03F7/2022
摘要： A pattern forming method includes forming a resist film on a target film to be processed, which is formed on a substrate; and forming a basic pattern part in the resist film by multiple exposure using photomasks, wherein each exposure process is performed at an amount of exposure smaller than a threshold assigned to the resist film; and the resist film is developed after the total sum of the amounts of exposure through a plurality of exposure processes exceeds the threshold, so that the basic pattern part including a hole shape, which corresponds to each area where the total amount of exposure through the exposure processes via the photomasks exceeds the threshold, is formed in the resist film. The method also includes performing etching via the basic pattern part so as to form a desired pattern in the target film.
摘要翻译：图案形成方法包括在基板上形成的被处理对象膜上形成抗蚀剂膜; 并且使用光掩模通过多次曝光在抗蚀剂膜中形成基本图案部分，其中每个曝光处理以小于分配给抗蚀剂膜的阈值的曝光量进行; 并且在通过多次曝光处理的曝光量的总和超过阈值之后显影抗蚀剂膜，使得包括孔形状的基本图案部分对应于通过曝光的总曝光量的每个区域通过光掩模的处理超过阈值，形成在抗蚀剂膜中。该方法还包括通过基本图案部分进行蚀刻，以便在目标膜中形成所需的图案。

5. 发明授权

US06833331B2 Method of manufacturing semiconductor integrated circuit device having insulating film formed from liquid substance containing polymer of silicon, oxygen, and hydrogen 失效
标题翻译：具有由含有硅，氧和氢的聚合物的液体物质形成的绝缘膜的半导体集成电路器件的制造方法
公开(公告)号：US06833331B2
公开(公告)日：2004-12-21
申请号：US10303935
申请日：2002-11-26
申请人： Masayoshi Saito , Katsuhiko Hotta , Masayoshi Hirasawa , Masayuki Kojima , Hiroyuki Uchiyama , Hiroyuki Maruyama , Takuya Fukuda
发明人： Masayoshi Saito , Katsuhiko Hotta , Masayoshi Hirasawa , Masayuki Kojima , Hiroyuki Uchiyama , Hiroyuki Maruyama , Takuya Fukuda
IPC分类号： H01L2131
CPC分类号： H01L21/3124 , H01L21/02164 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/3125 , H01L21/76802 , H01L21/76814 , H01L21/76816 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76831 , H01L27/10814 , H01L27/10894
摘要： An SOG film 16 obtained by heat-treating a polysilazan type SOG film at high temperature of about 800° C. is used as a planarized insulating film to be formed on the gate electrode (9; see FIGS. 31 and 32) of a MISFET (Qs, Qn, Qp) A polysilazan SOG film (57) not subjected to such a heat treatment is used as interlayer insulating film arranged among upper wiring layers (54, 55, 56, 62, 63).
摘要翻译：使用通过在约800℃的高温下热处理聚硅氮烷型SOG膜获得的SOG膜16作为形成在MISFET的栅极（9;参见图31和32）上的平坦化绝缘膜）（Qs，Qn，Qp）将不进行这种热处理的聚硅氮烷SOG膜（57）用作布置在上布线层（54,55,56,62,63）中的层间绝缘膜。

6. 发明授权

US06784116B2 Fabrication process of a semiconductor integrated circuit device 有权
公开(公告)号：US06784116B2
公开(公告)日：2004-08-31
申请号：US10355301
申请日：2003-01-31
申请人： Yoshikazu Tanabe , Isamu Asano , Makoto Yoshida , Naoki Yamamoto , Masayoshi Saito , Nobuyoshi Natsuaki
发明人： Yoshikazu Tanabe , Isamu Asano , Makoto Yoshida , Naoki Yamamoto , Masayoshi Saito , Nobuyoshi Natsuaki
IPC分类号： H01L2131
CPC分类号： H01L21/28247 , H01L21/28061 , H01L21/28176 , H01L21/32105 , H01L21/823437 , H01L21/823468 , H01L21/823828 , H01L21/823857 , H01L27/1052 , H01L27/10873 , H01L27/10894 , H01L29/4941
摘要： With a view to preventing the oxidation of a metal film at the time of light oxidation treatment after gate patterning and at the same time to making it possible to control the reproducibility of oxide film formation and homogeneity of oxide film thickness at gate side-wall end portions, in a gate processing step using a poly-metal, a gate electrode is formed by patterning a gate electrode material which has been deposited over a semiconductor wafer 1A having a gate oxide film formed thereon and has a poly-metal structure and then, the principal surface of the semiconductor wafer 1A heated to a predetermined temperature or vicinity thereof is supplied with a hydrogen gas which contains water at a low concentration, the water having been formed from hydrogen and oxygen by a catalytic action, to selectively oxidize the principal surface of the semiconductor wafer 1A, whereby the profile of the side-wall end portions of the gate electrode is improved.

7. 发明授权

US06215144B1 Semiconductor integrated circuit device, and method of manufacturing the same 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US06215144B1
公开(公告)日：2001-04-10
申请号：US09236223
申请日：1999-01-25
申请人： Masayoshi Saito , Yoshitaka Nakamura , Hidekazu Goto , Keizo Kawakita , Satoru Yamada , Toshihiro Sekiguchi , Isamu Asano , Yoshitaka Tadaki , Takuya Fukuda , Masayuki Suzuki , Tsuyoshi Tamaru , Naoki Fukuda , Hideo Aoki , Masayoshi Hirasawa
发明人： Masayoshi Saito , Yoshitaka Nakamura , Hidekazu Goto , Keizo Kawakita , Satoru Yamada , Toshihiro Sekiguchi , Isamu Asano , Yoshitaka Tadaki , Takuya Fukuda , Masayuki Suzuki , Tsuyoshi Tamaru , Naoki Fukuda , Hideo Aoki , Masayoshi Hirasawa
IPC分类号： H01L2972
CPC分类号： H01L21/76855 , H01L21/28518 , H01L21/31604 , H01L21/76801 , H01L21/76828 , H01L21/76837 , H01L21/76843 , H01L21/76856 , H01L21/7687 , H01L27/10814 , H01L27/10885 , H01L27/10894 , H01L28/40
摘要： In a DRAM having a capacitor-over-bitline structure in which the capacitive insulating film of an information storing capacitive element C is formed of a high dielectric material such as Ta2O5 (tantalum oxide) film 46, the portions of bit lines BL and first-layer interconnect lines 23 to 26 of a peripheral circuit which are in contact with at least an underlying silicon oxide film 28 are formed of a W film, the bit lines BL and the interconnect lines 23 to 26 being arranged below the information storing capacitive element C, whereby the adhesion at the interface between the bit lines BL and the interconnect lines 23 to 26 and the silicon oxide film is improved in terms of high-temperature heat treatment to be performed when the capacitive insulating film is being formed.
摘要翻译：在具有电容器的位线结构的DRAM中，信息存储电容元件C的电容绝缘膜由诸如Ta 2 O 5（氧化钽）膜46的高电介质材料形成，位线BL和第一 - 与W膜形成的与外部电路至少底层的氧化硅膜28接触的层间布线23〜26，位线BL和布线23〜26配置在信息存储电容元件C的下方从而在形成电容绝缘膜时进行的高温热处理方面提高了位线BL与布线23〜26之间界面处的粘附性和氧化硅膜。

8. 发明授权

US5298271A Method of preventing edible oils and fats from deteriorating 失效
标题翻译：防止食用油和脂肪变质的方法
公开(公告)号：US5298271A
公开(公告)日：1994-03-29
申请号：US922648
申请日：1992-07-30
申请人： Shoichi Takashina , Takashi Hazama , Akira Kurooka , Norio Maruguchi , Hiroshi Iwasa , Masayoshi Saito
发明人： Shoichi Takashina , Takashi Hazama , Akira Kurooka , Norio Maruguchi , Hiroshi Iwasa , Masayoshi Saito
IPC分类号： A23D9/06 , A23L3/3418 , A23D9/00
CPC分类号： A23L3/3418 , A23D9/06
摘要： A method for preventing refined edible oils and fats from deteriorating during transportation and/or storage thereof over a prolonged period of time, wherein the refined edible oils and fats are stored and/or transported at all times under an atmosphere rich in nitrogen gas. This nitrogen-enriched atmosphere contains nitrogen in a concentration not lower than 99.5%.
摘要翻译：一种用于在长时间运输和/或储存期间防止精制食用油和脂肪变质的方法，其中精炼的食用油和脂肪在富含氮气的气氛下一直储存和/或运输。该富氮气氛含有浓度不低于99.5％的氮气。

9. 发明授权

US4983532A Process for fabricating heterojunction bipolar transistors 失效
标题翻译：异质结双极晶体管的制造工艺
公开(公告)号：US4983532A
公开(公告)日：1991-01-08
申请号：US286710
申请日：1988-12-20
申请人： Katsuhiko Mitani , Tomonori Tanoue , Chushirou Kusano , Susumu Takahashi , Masayoshi Saito , Hiroshi Miyazaki , Fumio Murai
发明人： Katsuhiko Mitani , Tomonori Tanoue , Chushirou Kusano , Susumu Takahashi , Masayoshi Saito , Hiroshi Miyazaki , Fumio Murai
IPC分类号： H01L29/205 , H01L21/331 , H01L29/73 , H01L29/737
CPC分类号： H01L29/66318 , Y10S148/01 , Y10S148/011 , Y10S148/072 , Y10S148/10
摘要： Microfabrication and large scale integration of a device can be realized by using a planar heterojunction bipolar transistor formed by a process comprising successively growing semiconductor layers serving as a subcollector, a collector, a base, and an emitter, respectively, through epitaxial growth on a compound semiconductor substrate in such a manner that at least one of the emitter junction and collector junction is a heterojunction, wherein a collector drawing-out metal layer is formed by the selective CVD method.
摘要翻译：可以通过使用通过包括通过在化合物上的外延生长分别连续生长用作子集电极，集电极，基极和发射极的半导体层的工艺形成的平面异质结双极晶体管来实现器件的微结构和大规模集成半导体衬底，其中发射极结和集电极结中的至少一个是异质结，其中通过选择性CVD法形成集电体引出金属层。

10. 发明授权

US08508856B2 Immersion microscope objective and laser scanning microscope system using same 有权
标题翻译：浸液显微镜物镜和激光扫描显微镜系统使用相同
公开(公告)号：US08508856B2
公开(公告)日：2013-08-13
申请号：US12916188
申请日：2010-10-29
申请人： Masayoshi Saito , Shuhei Horigome , Noriyuki Sugizaki
发明人： Masayoshi Saito , Shuhei Horigome , Noriyuki Sugizaki
IPC分类号： G02B21/02
CPC分类号： G02B21/0032 , G02B9/60 , G02B15/163 , G02B21/02 , G02B21/33
摘要： An immersion microscope objective formed of thirteen or fewer lens elements includes, in order from the object side, first and second lens groups of positive refractive power, a third lens group, a fourth lens group having negative refractive power with its image-side surface being concave, and a fifth lens group having positive refractive power with its object-side surface being concave. The first lens group includes, in order from the object side, a lens component that consists of a lens element of positive refractive power (when computed as being in air) and a meniscus lens element having its concave surface on the object side. Various conditions are satisfied to ensure that images of fluorescence, obtained when the immersion microscope objective is used in a laser scanning microscope that employs multiphoton excitation to observe a specimen, are bright and of high resolution. Various laser scanning microscopes are also disclosed.
摘要翻译：由十三个或更少的透镜元件形成的浸没显微镜物镜包括从物体侧起依次具有正屈光力的第一和第二透镜组，第三透镜组，具有负折射力的第四透镜组，其像侧表面为具有正折射力的第五透镜组，其物侧表面是凹形的。第一透镜组从物体的顺序依次包括由正屈光力的透镜元件（当计算为空气时）和在物体侧具有凹面的弯月透镜元件构成的透镜部件。满足各种条件以确保当在使用多光子激发观察样品的激光扫描显微镜中使用浸没显微镜物镜时获得的荧光图像是明亮且高分辨率的。还公开了各种激光扫描显微镜。

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