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1. 发明申请

US20070058055A1 Solid-state imaging device, manufacturing method for solid-state imaging device, and camera using the same 审中-公开
标题翻译：固态成像装置，固态成像装置的制造方法以及使用其的照相机
公开(公告)号：US20070058055A1
公开(公告)日：2007-03-15
申请号：US10566671
申请日：2004-08-02
申请人： Takumi Yamaguchi , Shigetaka Kasuga , Takahiko Murata , Kenji Orita
发明人： Takumi Yamaguchi , Shigetaka Kasuga , Takahiko Murata , Kenji Orita
IPC分类号： H04N9/04
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627 , H01L31/02162 , H01L31/02164 , H01L31/02327
摘要： A solid-state imaging device includes a plurality of light-receiving units two-dimensionally arrayed in a semiconductor substrate, a filter unit operable to transmit incident lights of selected wavelengths to the plurality of light receiving units and a light shielding unit operable to shield incident light, the light shielding unit having a plurality of apertures, each aperture opposing a corresponding light receiving unit. Here, on a path of incident light from the light shielding unit to the plurality of light shielding units, the filter unit is disposed between the light shielding unit and the plurality of light-receiving units. The solid-state imaging device prevents color mixing caused by oblique light.
摘要翻译：固态成像装置包括：二维排列在半导体衬底中的多个光接收单元，可操作以将选定波长的入射光透射到多个光接收单元的滤光单元和可屏蔽入射的遮光单元光，遮光单元具有多个孔，每个孔与相应的光接收单元相对。这里，在从遮光单元到多个遮光单元的入射光的路径上，滤光单元设置在遮光单元和多个光接收单元之间。固态成像装置防止由斜光引起的混色。

2. 发明授权

US07518153B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07518153B2
公开(公告)日：2009-04-14
申请号：US11971467
申请日：2008-01-09
申请人： Manabu Usuda , Tetsuzo Ueda , Kenji Orita
发明人： Manabu Usuda , Tetsuzo Ueda , Kenji Orita
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/02 , H01L33/10 , H01L33/105 , H01L33/20 , H01L33/382 , H01L2933/0083
摘要： A nitride semiconductor light emitting device includes a substrate formed of silicon, an insulating film formed on the substrate and a single crystal thin film formed on the insulating film. On the single crystal film, a semiconductor laminated body including a light emitting layer of nitride semiconductor is formed.
摘要翻译：氮化物半导体发光器件包括由硅形成的衬底，形成在衬底上的绝缘膜和形成在绝缘膜上的单晶薄膜。在单晶膜上形成包括氮化物半导体发光层的半导体层叠体。

3. 发明授权

US07447266B2 Decoding device and decoding program for video image data 有权
标题翻译：用于视频图像数据的解码设备和解码程序
公开(公告)号：US07447266B2
公开(公告)日：2008-11-04
申请号：US11020109
申请日：2004-12-27
申请人： Kazuhiro Yamashita , Kenji Orita
发明人： Kazuhiro Yamashita , Kenji Orita
IPC分类号： H04N7/12
CPC分类号： H04N19/423 , G06F12/0862 , G06F12/0875 , H04N19/433 , H04N19/44 , H04N19/51 , H04N19/61
摘要： A decoding device comprises a cache memory for temporally storing video image data, a unit for determining a position of a reference macroblock corresponding to macroblock to be decoded based on a motion vector obtained by analyzing an encoded bitstream, and a unit for determining whether or not a reference macroblock includes a cacheline boundary when data of the reference macroblock is not stored in the memory and for specifying the position of the boundary as a front address for the data preload from a memory storing the data of the reference macroblock.
摘要翻译：解码装置包括用于暂时存储视频图像数据的高速缓冲存储器，用于基于通过分析编码比特流而获得的运动矢量确定与要解码的宏块相对应的参考宏块的位置的单元，以及用于确定是否当参考宏块的数据未被存储在存储器中并且用于从存储参考宏块的数据的存储器中指定作为数据预加载的前端地址的边界的位置时，参考宏块包括高速缓存线边界。

4. 发明申请

US20080048176A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080048176A1
公开(公告)日：2008-02-28
申请号：US11892708
申请日：2007-08-27
申请人： Kenji Orita , Yasuyuki Fukushima
发明人： Kenji Orita , Yasuyuki Fukushima
IPC分类号： H01L29/06 , H01L21/00
CPC分类号： H01L29/0657 , H01L29/0684 , H01L29/155 , H01L29/2003 , H01L29/7787 , H01L33/04 , H01L33/20 , H01L2933/0083
摘要： A semiconductor device includes a semiconductor superlattice layer and a semiconductor multilayer. The semiconductor superlattice layer has periodic concave-convex shapes, and a plurality of semiconductor films each having bent portions in accordance with the concave-convex shapes are stacked in the semiconductor superlattice layer. The semiconductor multilayer is formed so as to cover the concave-convex shapes and includes an active layer.
摘要翻译：半导体器件包括半导体超晶格层和半导体多层。半导体超晶格层具有周期性凹凸形状，并且在半导体超晶格层中堆叠多个根据凹凸形状的具有弯曲部分的半导体膜。形成半导体多层以覆盖凹凸形状并且包括有源层。

5. 发明授权

US07050472B2 Semiconductor laser device and method for manufacturing the same 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US07050472B2
公开(公告)日：2006-05-23
申请号：US09795959
申请日：2001-02-28
申请人： Kenji Orita , Atsunori Mochida , Masaaki Yuri
发明人： Kenji Orita , Atsunori Mochida , Masaaki Yuri
IPC分类号： H01S5/00
CPC分类号： H01S5/12 , H01S5/209 , H01S5/2231 , H01S5/32316
摘要： The invention provides a semiconductor laser device including an active layer, a semiconductor layer provided with a diffraction grating, an etch-stop layer, a cladding layer provided with a stripe structure, and a current blocking layer arranged at least on a side of said stripe structure, formed in that order on a substrate. In this semiconductor laser device, the etching-stop layer is formed on the semiconductor layer with the diffraction grating, so that damage of the diffraction grating due to etching can be prevented. The invention also provides a distributed Bragg reflection semiconductor laser device, including an active layer, and a current blocking layer having a stripe-shaped window and a diffraction grating formed at least near an end face thereof. This semiconductor laser device can be manufactured with fewer crystal growth processes than conventional semiconductor laser devices.
摘要翻译：本发明提供一种半导体激光器件，其包括有源层，设置有衍射光栅的半导体层，蚀刻停止层，设置有条纹结构的覆层，以及至少设置在所述条纹侧的电流阻挡层结构，在基板上依次形成。在该半导体激光器件中，利用衍射光栅在半导体层上形成蚀刻停止层，从而可以防止由蚀刻引起的衍射光栅的损伤。本发明还提供一种分布式布拉格反射半导体激光器件，其包括有源层，以及具有条状窗口的电流阻挡层和至少形成在其端面附近的衍射光栅。该半导体激光器件可以制造成比常规半导体激光器件更少的晶体生长工艺。

6. 发明申请

US20050285132A1 Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element 失效
标题翻译：半导体发光元件，半导体发光元件及半导体发光元件的制造方法
公开(公告)号：US20050285132A1
公开(公告)日：2005-12-29
申请号：US11117406
申请日：2005-04-29
申请人： Kenji Orita
发明人： Kenji Orita
IPC分类号： H01L33/32 , G02B6/122 , H01L29/22 , H01L33/20 , H01L33/40 , H01L33/54 , H01L33/56 , H01L33/62
CPC分类号： H01L33/20 , B82Y20/00 , G02B6/1225 , H01L33/22 , H01L33/42 , H01L33/54 , H01L2933/0083
摘要： Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.
摘要翻译：在与其主表面相对的半导体多层膜的表面上形成形成二维周期结构的突出/凹陷，而在另一个表面上形成具有高反射率的金属电极。通过使用二维周期性结构的衍射效果，能够提高从突起/凹部形成的表面的光提取效率。通过使用具有高反射率的金属电极将朝向金属电极发射的光反射到形成有突起/凹陷的表面，可以将通过二维周期结构实现的上述效果相乘。

7. 发明授权

US06274518B1 Method for producing a group III nitride compound semiconductor substrate 有权
标题翻译： III族氮化物化合物半导体衬底的制造方法
公开(公告)号：US06274518B1
公开(公告)日：2001-08-14
申请号：US09546881
申请日：2000-04-10
申请人： Masaaki Yuri , Osamu Imafuji , Shinji Nakamura , Masahiro Ishida , Kenji Orita
发明人： Masaaki Yuri , Osamu Imafuji , Shinji Nakamura , Masahiro Ishida , Kenji Orita
IPC分类号： H01L2131
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L21/02661 , H01L21/02664 , H01L31/184 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： The present invention provides a method for producing a group III nitride compound semiconductor substrate including: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step; (b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and (c) cooling the substrate and separating the second semiconductor film from the first semiconductor film. Thus, a large-area group III nitride compound semiconductor substrate can be produced in high yields and with high reproducibility.
摘要翻译：本发明提供了一种制造III族氮化物化合物半导体衬底的方法，包括：（a）在衬底上形成第一半导体膜，所述第一半导体膜由第一III族氮化物化合物半导体制成并具有步骤; （b）在第一半导体膜上形成具有与第一III族氮化物半导体不同的热膨胀系数的第二III族氮化物化合物半导体的第二半导体膜; 和（c）冷却基板并将第二半导体膜与第一半导体膜分离。因此，可以以高产率和高重现性制造大面积III族氮化物化合物半导体衬底。

8. 发明申请

US20100314653A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：半导体发光元件
公开(公告)号：US20100314653A1
公开(公告)日：2010-12-16
申请号：US12866436
申请日：2009-06-03
申请人： Kenji Orita , Shinji Yoshida
发明人： Kenji Orita , Shinji Yoshida
IPC分类号： H01L33/10 , H01L33/30
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0021 , H01S5/0282 , H01S5/0287 , H01S5/0425 , H01S5/2009 , H01S5/2201 , H01S5/3063 , H01S5/3211 , H01S5/3216 , H01S5/34333
摘要： A semiconductor light-emitting device includes a semiconductor multilayer (25) including a cavity structure having two facets facing each other, and a first protective film (23a) formed on at least one of the two facets and of metal nitride. The metal nitride contains aluminum and nitrogen as main components, and at least one of yttrium and lanthanum.
摘要翻译：半导体发光器件包括：半导体多层（25），其包括具有彼此面对的两个面的空腔结构，以及形成在所述两个面中的至少一个面和金属氮化物上的第一保护膜（23a）。金属氮化物含有铝和氮作为主要成分，以及钇和镧中的至少一种。

9. 发明申请

US20070085102A1 Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element 审中-公开
公开(公告)号：US20070085102A1
公开(公告)日：2007-04-19
申请号：US11636496
申请日：2006-12-11
申请人： Kenji Orita
发明人： Kenji Orita
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , B82Y20/00 , G02B6/1225 , H01L33/22 , H01L33/42 , H01L33/54 , H01L2933/0083
摘要： Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.

10. 发明授权

US07102175B2 Semiconductor light-emitting device and method for fabricating the same 有权
公开(公告)号：US07102175B2
公开(公告)日：2006-09-05
申请号：US10820055
申请日：2004-04-08
申请人： Kenji Orita
发明人： Kenji Orita
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/38 , H01L33/42 , H01L2933/0083
摘要： Projections/depressions of a two-dimensional periodic structure are formed in a p-GaN layer (4) such that the period of the projections/depressions is 1 to 20 times the wavelength of light radiated from an active layer (3) in a semiconductor. As a result, a diffractive effect achieved by the projections/depressions of the two-dimensional periodic structure change the direction in which the light radiated from the active layer (3) travels. If the projections/depressions are not provided, light at a radiation angle which satisfies conditions for total reflection at the interface between a semiconductor device and an air cannot be extracted to the outside of the semiconductor device so that the light emission efficiency of the device is low. By contrast, the projections/depressions as formed with a period according to the present invention diffract the light at an angle which does not cause total reflection so that the efficiency with which the light is extracted to the outside of the semiconductor device is improved exponentially. This improves the light emission efficiency of the device.

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