专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110051773A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20110051773A1
公开(公告)日：2011-03-03
申请号：US12861157
申请日：2010-08-23
申请人： Takumi TANIKAWA , Gen SHIMIZU , Daiki MIHASHI
发明人： Takumi TANIKAWA , Gen SHIMIZU , Daiki MIHASHI
IPC分类号： H01S5/40
CPC分类号： H01S5/4031 , H01S5/0202 , H01S5/0224 , H01S5/02272 , H01S5/3202 , H01S5/4087
摘要： A semiconductor laser device that can suppress size increase of a semiconductor laser element and increase in an interval between light emitting portions and can improve productivity is provided. This semiconductor laser device has a first semiconductor laser element, and a second semiconductor laser element which is a monolithic multi-wavelength semiconductor laser element. The second semiconductor laser element includes a semiconductor substrate, and, of side faces of the semiconductor substrate of the second semiconductor laser element, a side face arranged opposite the first semiconductor laser element is inclined with respect to the normal direction of a major face of the semiconductor substrate so that a distance from the first semiconductor laser element is increasingly large away from a mounting member.
摘要翻译：提供一种可以抑制半导体激光元件的尺寸增加并且增加发光部分之间的间隔并且可以提高生产率的半导体激光器件。该半导体激光装置具有第一半导体激光元件和作为单片多波长半导体激光元件的第二半导体激光元件。第二半导体激光元件包括半导体基板，并且在第二半导体激光元件的半导体基板的侧面，与第一半导体激光元件相对配置的侧面相对于主面的主面的法线方向倾斜使得距离第一半导体激光元件的距离远离安装构件越来越大。

2. 发明申请

US20110007771A1 SEMICONDUCTOR LASER APPARATUS, METHOD OF MANUFACTURING THE SAME AND OPTICAL APPARATUS 审中-公开
标题翻译：半导体激光装置，其制造方法和光学装置
公开(公告)号：US20110007771A1
公开(公告)日：2011-01-13
申请号：US12831000
申请日：2010-07-06
申请人： Yasuyuki BESSHO , Koji GONSUI , Gen SHIMIZU , Daiki MIHASHI , Kiyoshi OOTA
发明人： Yasuyuki BESSHO , Koji GONSUI , Gen SHIMIZU , Daiki MIHASHI , Kiyoshi OOTA
IPC分类号： H01S5/40 , H01S5/323 , H01L21/50
CPC分类号： G11B7/1275 , B82Y20/00 , H01L2224/83191 , H01L2224/83192 , H01S5/0207 , H01S5/02212 , H01S5/0224 , H01S5/02272 , H01S5/22 , H01S5/34326 , H01S5/34333 , H01S5/4031 , H01S5/4087
摘要： This semiconductor laser apparatus includes a support member having a main surface, a first semiconductor laser device bonded onto the main surface through a first bonding layer and a second semiconductor laser device bonded onto the main surface through a second bonding layer to be adjacent to the first semiconductor laser device. The melting point of the second bonding layer is lower than that of the first bonding layer, and a first height from the main surface to a fourth surface of the second semiconductor laser device is larger than a second height from the main surface to a second surface of the first semiconductor laser device.
摘要翻译：该半导体激光装置包括具有主表面的支撑构件，通过第一接合层接合到主表面上的第一半导体激光器件和通过第二接合层接合到主表面上的第二半导体激光器件，以与第一接合层相邻半导体激光器件。第二接合层的熔点低于第一接合层的熔点，并且从第二半导体激光器件的主表面到第四表面的第一高度大于从主表面到第二表面的第二高度的第一半导体激光器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式