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1. 发明申请

US20120160319A1 SOLAR BATTERY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120160319A1
公开(公告)日：2012-06-28
申请号：US13394023
申请日：2009-09-04
申请人： Takumi Nakahata , Kazunori Inoue , Yusuke Yamagata
发明人： Takumi Nakahata , Kazunori Inoue , Yusuke Yamagata
IPC分类号： H01L31/0232 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/0527 , H01L31/022425 , H01L31/02245 , H01L31/0392 , H01L31/03921 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/056 , Y02E10/52
摘要： In a solar battery including: a photoelectric conversion layer that converts light into electricity; and a reflecting electrode layer that is provided on an opposite side of a light incident side in the photoelectric conversion layer and reflects light passed through the photoelectric conversion layer to the photoelectric conversion layer side, to realize a reflecting electrode layer having excellent adhesion and thermal corrosion resistance, stable electrical characteristics and satisfactory light reflection characteristics and to obtain a solar battery having high reliability, excellent electrical characteristics and optical characteristics, the reflecting electrode layer includes, on the photoelectric conversion layer side, a metal layer containing silver as a main component and containing nitrogen.
摘要翻译：一种太阳能电池，包括：将光转换成电的光电转换层; 以及反射电极层，其设置在光电转换层的光入射侧的相反侧，并将通过光电转换层的光反射到光电转换层侧，以实现具有优异的粘附性和热腐蚀性的反射电极层电阻，稳定的电特性和良好的光反射特性，并且获得具有高可靠性，优异的电特性和光学特性的太阳能电池，反射电极层在光电转换层侧包括含有银作为主要成分的金属层和含氮。

2. 发明授权

US08841541B2 Solar battery and method of manufacturing the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08841541B2
公开(公告)日：2014-09-23
申请号：US13394023
申请日：2009-09-04
申请人： Takumi Nakahata , Kazunori Inoue , Yusuke Yamagata
发明人： Takumi Nakahata , Kazunori Inoue , Yusuke Yamagata
IPC分类号： H01L31/0224 , H01L31/0232 , H01L31/18 , H01L27/142 , H01L31/0392 , H01L31/052
CPC分类号： H01L31/0527 , H01L31/022425 , H01L31/02245 , H01L31/0392 , H01L31/03921 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/056 , Y02E10/52
摘要： In a solar battery including: a photoelectric conversion layer that converts light into electricity; and a reflecting electrode layer that is provided on an opposite side of a light incident side in the photoelectric conversion layer and reflects light passed through the photoelectric conversion layer to the photoelectric conversion layer side, to realize a reflecting electrode layer having excellent adhesion and thermal corrosion resistance, stable electrical characteristics and satisfactory light reflection characteristics and to obtain a solar battery having high reliability, excellent electrical characteristics and optical characteristics, the reflecting electrode layer includes, on the photoelectric conversion layer side, a metal layer containing silver as a main component and containing nitrogen.
摘要翻译：一种太阳能电池，包括：将光转换成电的光电转换层; 以及反射电极层，其设置在光电转换层的光入射侧的相反侧，并将通过光电转换层的光反射到光电转换层侧，以实现具有优异的粘附性和热腐蚀性的反射电极层电阻，稳定的电特性和良好的光反射特性，并且获得具有高可靠性，优异的电特性和光学特性的太阳能电池，反射电极层在光电转换层侧包括含有银作为主要成分的金属层和含氮。

3. 发明授权

US08040476B2 Display device and method of producing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08040476B2
公开(公告)日：2011-10-18
申请号：US12471970
申请日：2009-05-26
申请人： Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Naoki Nakagawa , Masafumi Agari , Tetsuya Satake , Toru Kokogawa , Kenji Arita
发明人： Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Naoki Nakagawa , Masafumi Agari , Tetsuya Satake , Toru Kokogawa , Kenji Arita
IPC分类号： G02F1/1333
CPC分类号： B32B38/1866 , B32B2037/243 , B32B2309/10 , B32B2457/202 , G02F1/133305 , G02F2201/503
摘要： The display device includes a pair of insulating substrates arranged so as to be opposed, a bonding layer, and a strain suppressing plate. The bonding layer is provided on the outer surface side of one insulating substrate. The strain suppressing plate has rigidity higher than that of the insulating substrate to suppress the strain caused by curving the insulating substrate. The strain suppressing plate is fixed to the insulating substrate by the bonding layer.
摘要翻译：显示装置包括一对绝缘基板，其被布置为相对，接合层和应变抑制板。接合层设置在一个绝缘基板的外表面侧。应变抑制板的刚性高于绝缘基板的刚性，以抑制由于弯曲绝缘基板引起的应变。应变抑制板通过接合层固定在绝缘基板上。

4. 发明授权

US07834962B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US07834962B2
公开(公告)日：2010-11-16
申请号：US12330105
申请日：2008-12-08
申请人： Tetsuya Satake , Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Takeshi Ono , Naoki Nakagawa , Suguru Nagae
发明人： Tetsuya Satake , Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Takeshi Ono , Naoki Nakagawa , Suguru Nagae
IPC分类号： G02F1/1333 , G02F1/1335
CPC分类号： G02F1/133305 , G02F1/133512 , G02F2001/133354
摘要： In a liquid crystal display (10) having a curved display surface, long sides of pixel structures (11) are arranged along the curve direction (Y) of the display surface and on a side of counter substrate provided is a black matrix having a black matrix opening (41a) whose length in the curve direction (Y) is not longer than E−L {(T1/2)+(T2/2)+d}/R, assuming that the length of the display surface in the curve direction (Y) is L, the thickness of an array substrate is T1, the thickness of the counter substrate is T2, the size of the gap between the array substrate and the counter substrate is d, the radius of curvature of the curved display surface is R and the length of a long side of a pixel electrode (29) provided in each of the pixel structures (11) is E. It thereby becomes possible to suppress display unevenness resulting from positional misalignment of the two substrates due to curvature and provide a liquid crystal display achieving a high-quality display image.
摘要翻译：在具有弯曲显示面的液晶显示器（10）中，像素结构（11）的长边沿着显示面的曲线方向（Y）配置，在相对基板的一侧设有具有黑色假设曲线中的显示面的长度，曲线方向（Y）的长度不长于E-L {（T1 / 2）+（T2 / 2）+ d} / R的矩阵开口41a 方向（Y）为L，阵列基板的厚度为T1，对置基板的厚度为T2，阵列基板与对置基板的间隔尺寸为d，曲面显示面的曲率半径是R，并且设置在每个像素结构（11）中的像素电极（29）的长边的长度为E.因此，由此可以抑制由于曲率而导致的两个基板的位置偏移导致的显示不均匀，并且提供实现高质量显示图像的液晶显示器。

5. 发明申请

US20090290113A1 DISPLAY DEVICE AND METHOD OF PRODUCING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090290113A1
公开(公告)日：2009-11-26
申请号：US12471970
申请日：2009-05-26
申请人： Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Naoki Nakagawa , Masafumi Agari , Tetsuya Satake , Toru Kokogawa , Kenji Arita
发明人： Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Naoki Nakagawa , Masafumi Agari , Tetsuya Satake , Toru Kokogawa , Kenji Arita
IPC分类号： G02F1/1333 , B32B37/00
CPC分类号： B32B38/1866 , B32B2037/243 , B32B2309/10 , B32B2457/202 , G02F1/133305 , G02F2201/503
摘要： The display device includes a pair of insulating substrates arranged so as to be opposed, a bonding layer, and a strain suppressing plate. The bonding layer is provided on the outer surface side of one insulating substrate. The strain suppressing plate has rigidity higher than that of the insulating substrate to suppress the strain caused by curving the insulating substrate. The strain suppressing plate is fixed to the insulating substrate by the bonding layer.
摘要翻译：显示装置包括一对绝缘基板，其被布置为相对，接合层和应变抑制板。接合层设置在一个绝缘基板的外表面侧。应变抑制板的刚性高于绝缘基板的刚性，以抑制由于弯曲绝缘基板引起的应变。应变抑制板通过接合层固定在绝缘基板上。

6. 发明授权

US08546804B2 Semiconductor device including a region containing nitrogen at an interface and display device 有权
标题翻译：半导体器件包括界面处含有氮的区域和显示装置
公开(公告)号：US08546804B2
公开(公告)日：2013-10-01
申请号：US13232251
申请日：2011-09-14
申请人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
发明人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , G02F1/136
CPC分类号： H01L29/458 , H01L29/42384 , H01L29/66765
摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要翻译：本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

7. 发明申请

US20120112194A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
标题翻译：半导体器件和显示器件
公开(公告)号：US20120112194A1
公开(公告)日：2012-05-10
申请号：US13232251
申请日：2011-09-14
申请人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
发明人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
IPC分类号： H01L33/08
CPC分类号： H01L29/458 , H01L29/42384 , H01L29/66765
摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要翻译：本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

8. 发明授权

US08159749B2 Antireflection coating and display device 有权
标题翻译：防反射涂层和显示装置
公开(公告)号：US08159749B2
公开(公告)日：2012-04-17
申请号：US12545217
申请日：2009-08-21
申请人： Kazunori Inoue , Naoki Tsumura , Nobuaki Ishiga , Takeshi Ono , Naoki Nakagawa , Masafumi Agari , Yusuke Yamagata , Kensuke Nagayama
发明人： Kazunori Inoue , Naoki Tsumura , Nobuaki Ishiga , Takeshi Ono , Naoki Nakagawa , Masafumi Agari , Yusuke Yamagata , Kensuke Nagayama
IPC分类号： G02B5/28 , G02F1/1335
CPC分类号： G02B1/116 , C08K3/08 , C09D1/00 , C09D7/61 , C23C14/0036 , C23C14/0641 , C23C14/18 , G02F1/133502 , Y10T428/265
摘要： An antireflection coating is formed on a transparent substrate and includes an Al film having a transmittance of lower than 10% at a wavelength of 550 nm with a thickness of 25 nm and predominantly composed of aluminum (Al), and an Al—N film formed in at least one of an upper layer and a lower layer of the Al film, having a transmittance of equal to or higher than 10% at a wavelength of 550 nm with a thickness of 25 nm, predominantly composed of Al and at least containing a nitrogen (N) element as an additive. A specific resistance of the antireflection coating is equal to or lower than 1.0×10−2 O·cm, and a reflectance of a surface of the Al—N film is equal to or lower than 50% in a visible light region.
摘要翻译：在透明基板上形成防反射膜，在550nm波长下透射率低于10％的Al膜，厚度为25nm，主要由铝（Al）构成，形成Al-N膜在Al膜的上层和下层中的至少一层中，在550nm的波长下具有等于或高于10％的透射率，厚度为25nm，主要由Al组成并且至少含有氮（N）元素作为添加剂。抗反射涂层的电阻率为1.0×10 -2 O·cm以下，Al-N膜的表面的可反射率在可见光区域为50％以下。

9. 发明申请

US20130131242A1 RUBBER COMPOSITION FOR GOLF BALL 有权
标题翻译：高尔夫球用橡胶组合物
公开(公告)号：US20130131242A1
公开(公告)日：2013-05-23
申请号：US13300763
申请日：2011-11-21
申请人： Yuichiro OZAWA , Tsuyoshi NAKAJIMA , Teppei MORI , Yusuke Yamagata , Takahiro Iwai
发明人： Yuichiro OZAWA , Tsuyoshi NAKAJIMA , Teppei MORI , Yusuke Yamagata , Takahiro Iwai
IPC分类号： C08K5/405
CPC分类号： C08K5/405 , C08K5/098 , C08L21/00
摘要： The invention provides a rubber composition for golf balls which includes (A) a base rubber containing a polybutadiene having a cis-1,4 bond content of at least 60 wt %, (B) an unsaturated carboxylic acid and/or a metal salt thereof, and (C) a thiourea of the general formula wherein R is independently at each occurrence a hydrogen atom or a hydrocarbon group of 1 to 20 carbons. The golf ball rubber composition of the invention enables a high-quality molded and crosslinked product having a suitable hardness and a high resilience to be obtained.
摘要翻译：本发明提供一种高尔夫球用橡胶组合物，其包含（A）含有顺式-1,4键含量为至少60重量％的聚丁二烯的基础橡胶，（B）不饱和羧酸和/或其金属盐和（C）通式的硫脲，其中R在每次出现时独立地为氢原子或碳原子数为1〜20的烃基。本发明的高尔夫球橡胶组合物能够获得具有合适的硬度和高弹性的高品质的模制和交联的产品。

10. 发明授权

US09254420B2 Golf ball composition and golf ball 有权
标题翻译：高尔夫球组合和高尔夫球
公开(公告)号：US09254420B2
公开(公告)日：2016-02-09
申请号：US13419871
申请日：2012-03-14
申请人： Hideo Takeichi , Takashi Ohira , Yuichiro Ozawa , Tsuyoshi Nakajima , Satoru Tamaki , Yusuke Yamagata , Teppei Mori
发明人： Hideo Takeichi , Takashi Ohira , Yuichiro Ozawa , Tsuyoshi Nakajima , Satoru Tamaki , Yusuke Yamagata , Teppei Mori
IPC分类号： C08L9/00 , A63B37/00 , A63B37/04 , C08F136/06 , C08F4/54 , C08F4/6592 , A63B45/00
CPC分类号： A63B37/0003 , A63B37/0033 , A63B37/0051 , A63B37/0064 , A63B37/0065 , A63B37/0066 , A63B37/0074 , A63B37/0075 , A63B37/0076 , A63B37/008 , A63B37/0081 , A63B37/0084 , A63B45/00 , C08F4/545 , C08F4/65922 , C08F136/06 , C08L9/00
摘要： A golf ball having a good rebound and excellent flight performance can be obtained using a golf ball composition which includes a diene polymer containing not more than 1.5% of components having a molecular weight of 30,000 or less.
摘要翻译：可以使用高尔夫球组合物获得具有良好回弹性和优异飞行性能的高尔夫球，该高尔夫球组合物包含含有不超过1.5％分子量为30,000以下的组分的二烯聚合物。

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