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1. 发明申请

US20100078816A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100078816A1
公开(公告)日：2010-04-01
申请号：US12523550
申请日：2008-02-04
申请人： Takumi Nakahata , Kazunori Inoue , Koji Oda , Naoki Nakagawa , Nobuaki Ishiga
发明人： Takumi Nakahata , Kazunori Inoue , Koji Oda , Naoki Nakagawa , Nobuaki Ishiga
IPC分类号： H01L23/532 , H01L21/283
CPC分类号： G02F1/13439 , G02F1/133555 , G02F1/136227 , G02F2001/136295 , G02F2201/40 , G02F2202/06 , H01L27/124 , H01L29/458
摘要： A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.
摘要翻译：显示装置包括形成在基板上的金属导电层，形成在基板上并与金属导电层接合的透明电极膜和隔离金属导电层和透明导电膜的层间绝缘膜。金属导电层具有由铝或铝合金制成的较低铝层，由含有杂质的铝或铝合金制成的中间杂质含有层，形成在下铝层的大致整个上表面上，铝层由铝制成或铝合金，并形成在中间杂质含有层上。在层间绝缘膜和上部铝层中，接触孔穿过其中并局部暴露中间杂质含有层，并且透明电极膜与从接触孔露出的中间杂质含有层中的金属导电层接合。

2. 发明授权

US08405091B2 Display device and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08405091B2
公开(公告)日：2013-03-26
申请号：US12523550
申请日：2008-02-04
申请人： Takumi Nakahata , Kazunori Inoue , Koji Oda , Naoki Nakagawa , Nobuaki Ishiga
发明人： Takumi Nakahata , Kazunori Inoue , Koji Oda , Naoki Nakagawa , Nobuaki Ishiga
IPC分类号： H01L27/14
CPC分类号： G02F1/13439 , G02F1/133555 , G02F1/136227 , G02F2001/136295 , G02F2201/40 , G02F2202/06 , H01L27/124 , H01L29/458
摘要： A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.
摘要翻译：显示装置包括形成在基板上的金属导电层，形成在基板上并与金属导电层接合的透明电极膜和隔离金属导电层和透明导电膜的层间绝缘膜。金属导电层具有由铝或铝合金制成的较低铝层，由含有杂质的铝或铝合金制成的中间杂质含有层，形成在下铝层的大致整个上表面上，铝层由铝制成或铝合金，并形成在中间杂质含有层上。在层间绝缘膜和上部铝层中，接触孔穿过其中并局部暴露中间杂质含有层，并且透明电极膜与从接触孔露出的中间杂质含有层中的金属导电层接合。

3. 发明授权

US08558248B2 A1 alloy film, electronic device, and active matrix substrate for use in electrooptic display device 有权
标题翻译： A1合金膜，电子器件和用于电光显示器件的有源矩阵基板
公开(公告)号：US08558248B2
公开(公告)日：2013-10-15
申请号：US12234371
申请日：2008-09-19
申请人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata
发明人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata
IPC分类号： H01L33/00
CPC分类号： H01L23/53219 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/12044 , Y10T428/12438 , H01L2924/00
摘要： In accordance with one aspect of the present invention, an Al alloy film contains a first additive element composed of Ni, and at least one type of second additive element selected from the group consisting of Group 2A alkaline earth metals and Groups 3B and 4B metalloids in Period 2 or 3 of the periodic table of the elements. Furthermore, the composition ratio of the first additive element is 0.5-5 at %, and the composition ratio of the second additive element is 0.1-3 at %.
摘要翻译：根据本发明的一个方面，Al合金膜含有由Ni组成的第一添加元素，以及选自2A族碱土金属和3B族和4B族金属中的至少一种第二添加元素元素周期表的周期2或3。此外，第一添加元素的组成比为0.5〜5原子％，第二添加元素的组成比为0.1〜3原子％。

4. 发明授权

US07825515B2 Semiconductor device, display device, and method of manufacturing semiconductor device 有权
标题翻译：半导体装置，显示装置以及半导体装置的制造方法
公开(公告)号：US07825515B2
公开(公告)日：2010-11-02
申请号：US12206187
申请日：2008-09-08
申请人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata , Kazumasa Kawase
发明人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata , Kazumasa Kawase
IPC分类号： H01L23/48
CPC分类号： H01L21/2855 , H01L23/53223 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.
摘要翻译：半导体器件包括以硅为主要成分的膜，以及与以硅为主要成分的膜直接连接的源极，漏电极等铝合金膜，例如欧姆低电阻 Si膜，并且在接合界面附近至少含有Al，Ni和N。当直接连接到含硅作为主要成分的膜而不具有由高熔点金属形成的阻挡层时，铝合金膜具有良好的接触特性。

5. 发明授权

US08159749B2 Antireflection coating and display device 有权
标题翻译：防反射涂层和显示装置
公开(公告)号：US08159749B2
公开(公告)日：2012-04-17
申请号：US12545217
申请日：2009-08-21
申请人： Kazunori Inoue , Naoki Tsumura , Nobuaki Ishiga , Takeshi Ono , Naoki Nakagawa , Masafumi Agari , Yusuke Yamagata , Kensuke Nagayama
发明人： Kazunori Inoue , Naoki Tsumura , Nobuaki Ishiga , Takeshi Ono , Naoki Nakagawa , Masafumi Agari , Yusuke Yamagata , Kensuke Nagayama
IPC分类号： G02B5/28 , G02F1/1335
CPC分类号： G02B1/116 , C08K3/08 , C09D1/00 , C09D7/61 , C23C14/0036 , C23C14/0641 , C23C14/18 , G02F1/133502 , Y10T428/265
摘要： An antireflection coating is formed on a transparent substrate and includes an Al film having a transmittance of lower than 10% at a wavelength of 550 nm with a thickness of 25 nm and predominantly composed of aluminum (Al), and an Al—N film formed in at least one of an upper layer and a lower layer of the Al film, having a transmittance of equal to or higher than 10% at a wavelength of 550 nm with a thickness of 25 nm, predominantly composed of Al and at least containing a nitrogen (N) element as an additive. A specific resistance of the antireflection coating is equal to or lower than 1.0×10−2 O·cm, and a reflectance of a surface of the Al—N film is equal to or lower than 50% in a visible light region.
摘要翻译：在透明基板上形成防反射膜，在550nm波长下透射率低于10％的Al膜，厚度为25nm，主要由铝（Al）构成，形成Al-N膜在Al膜的上层和下层中的至少一层中，在550nm的波长下具有等于或高于10％的透射率，厚度为25nm，主要由Al组成并且至少含有氮（N）元素作为添加剂。抗反射涂层的电阻率为1.0×10 -2 O·cm以下，Al-N膜的表面的可反射率在可见光区域为50％以下。

6. 发明授权

US08546804B2 Semiconductor device including a region containing nitrogen at an interface and display device 有权
标题翻译：半导体器件包括界面处含有氮的区域和显示装置
公开(公告)号：US08546804B2
公开(公告)日：2013-10-01
申请号：US13232251
申请日：2011-09-14
申请人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
发明人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , G02F1/136
CPC分类号： H01L29/458 , H01L29/42384 , H01L29/66765
摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要翻译：本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

7. 发明申请

US20120112194A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
标题翻译：半导体器件和显示器件
公开(公告)号：US20120112194A1
公开(公告)日：2012-05-10
申请号：US13232251
申请日：2011-09-14
申请人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
发明人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
IPC分类号： H01L33/08
CPC分类号： H01L29/458 , H01L29/42384 , H01L29/66765
摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要翻译：本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

8. 发明申请

US20070284742A1 SEMICONDUCTOR DEVICE AND ACTIVE MATRIX DISPLAY DEVICE 有权
标题翻译：半导体器件和有源矩阵显示器件
公开(公告)号：US20070284742A1
公开(公告)日：2007-12-13
申请号：US11741193
申请日：2007-04-27
申请人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Kazumasa Kawase
发明人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Kazumasa Kawase
IPC分类号： H01L23/48
CPC分类号： H01L29/4908 , G02F2001/136295 , H01L27/124 , H01L29/458
摘要： A semiconductor device includes a semiconductor layer, an Al alloy film electrically connected to the semiconductor layer, and a transparent electrode layer directly contacting with the Al alloy film at least over an insulating substrate. The Al alloy film includes one or more kinds of elements selected from Fe, Co and Ni in total of 0.5 to 10 mol %, and a remaining substantially comprises Al.
摘要翻译：半导体器件包括半导体层，与半导体层电连接的Al合金膜，以及至少在绝缘基板上与Al合金膜直接接触的透明电极层。 Al合金膜包括选自Fe，Co和Ni中的一种或多种元素，总计为0.5至10mol％，其余基本上包含Al。

9. 发明授权

US07400365B2 Method for manufacturing a thin film transistor array substrate for a liquid crystal display device 有权
标题翻译：液晶显示装置用薄膜晶体管阵列基板的制造方法
公开(公告)号：US07400365B2
公开(公告)日：2008-07-15
申请号：US10900607
申请日：2004-07-28
申请人： Fumihiro Gotoh , Nobuaki Ishiga , Toshio Araki , Kazunori Inoue , Hiroyasu Itoh , Eiji Shibata , Masanao Nabeshima
发明人： Fumihiro Gotoh , Nobuaki Ishiga , Toshio Araki , Kazunori Inoue , Hiroyasu Itoh , Eiji Shibata , Masanao Nabeshima
IPC分类号： G02F1/136 , G02F1/1345
CPC分类号： H01L29/66765 , G02F1/1368 , G02F2001/136295 , H01L27/12 , H01L29/4908
摘要： A method for manufacturing thin film transistor array substrate for a liquid crystal display device-includes:—(a) forming a first metal thin film layer on a insulating substrate and forming a gate wiring and a gate electrode by a first photolithography. (b) forming a gate insulating film layer, a semiconductor film layer, an ohmic contact film layer and a second metal thin film layer, and forming the thin film transistor by a second photolithography, (c) forming an interlayer insulating film, and forming a pixel contact hole, a first contact hole and a second contact hole by a third photolithography, and (d) forming a transparent conductive film, and forming a pixel electrode by a fourth photolithography. The first metal thin film has a two-layered structure comprising a first layer made of aluminum or aluminum alloy and a second layer located on said first layer, and the second metal thin film is formed of an alloy mainly containing molybdenum.
摘要翻译：一种用于制造液晶显示装置的薄膜晶体管阵列基板的方法，包括：（a）在绝缘基板上形成第一金属薄膜层，并通过第一光刻形成栅极布线和栅电极，（b）形成栅极绝缘膜层，半导体膜层，欧姆接触膜层和第二金属薄膜层，通过第二光刻法形成薄膜晶体管，（c）形成层间绝缘膜，形成像素接触孔，第一接触孔和第二接触孔，以及（d）形成透明导电膜，并通过第四光刻形成像素电极。第一金属薄膜具有包括由铝或铝合金制成的第一层和位于所述第一层上的第二层的第二金属薄膜的二层结构，第二金属薄膜由主要含有钼的合金形成。

10. 发明申请

US20090195151A1 ORGANIC ELECTROLUMINESCENCE TYPE DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机电致发光显示装置及其制造方法
公开(公告)号：US20090195151A1
公开(公告)日：2009-08-06
申请号：US12358744
申请日：2009-01-23
申请人： Kensuke Nagayama , Kazunori Inoue , Nobuaki Ishiga
发明人： Kensuke Nagayama , Kazunori Inoue , Nobuaki Ishiga
IPC分类号： H01J1/62 , C23C14/06
CPC分类号： H01L51/105 , H01L27/3244 , H01L51/5218 , H01L2251/308
摘要： An organic electroluminescence type display apparatus according to an aspect of the present invention includes: a thin film transistor formed on an insulating substrate; and an organic EL device connected to the thin film transistor and including at least an anode, an electroluminescence layer, and a cathode stacked on each other in this order. The anode includes: an Al alloy film having conductivity and including at least one kind of Group 8 3d transition metals, and oxygen, the at least one kind of the Group 8 3d transition metals and the oxygen being added to aluminum; and an amorphous ITO film formed on the Al alloy film.
摘要翻译：根据本发明的一个方面的有机电致发光型显示装置包括：形成在绝缘基板上的薄膜晶体管; 以及连接到薄膜晶体管并且至少包括依次堆叠的阳极，电致发光层和阴极的有机EL器件。阳极包括：具有导电性且包括至少一种第8族3d过渡金属的Al合金膜和氧，所述至少一种第8族3d过渡金属和氧被添加到铝中; 以及在Al合金膜上形成的非晶ITO膜。

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