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    • 3. 发明授权
    • Magnetic reluctance effect magnetic head with the connection length of
the forward electrode less than the facing length of the magnetic gap
    • 磁阻效应磁头与正向电极的连接长度小于磁隙的面对长度
    • US6130810A
    • 2000-10-10
    • US231513
    • 1994-04-22
    • Takuji ShibataNorio SaitoYutaka Soda
    • Takuji ShibataNorio SaitoYutaka Soda
    • G11B5/39
    • G11B5/3948G11B5/3903
    • A magnetic reluctance effect magnetic head in which a forward side electrode is stacked on at least the surface of a magnetic reluctance effect element facing a magnetic recording medium, and in which an upper magnetic pole is stacked on the forward side electrode for facing the magnetic reluctance effect element. A connecting length L1 between the magnetic reluctance effect element and the forward side electrode is shorter than a facing length L2 over which the upper magnetic pole and the magnetic reluctance effect element face each other via a magnetic gap G. The upper magnetic pole and the magnetic reluctance effect element have an area in which the upper magnetic pole and the magnetic reluctance effect element face each other over a distance g2 larger than a magnetic gap length g1 of the magnetic gap G. The upper magnetic pole may be formed to be progressively spaced apart from the magnetic reluctance effect element by being angled 30.degree. relative to the magnetic reluctance effect element, and the distance g2 may be progressively increased. With the magnetic reluctance effect magnetic head, the playback output may be improved and the magnetic head may be reduced in size and in the power consumption.
    • 一种磁阻效应磁头,其中前侧电极至少层叠在面对磁记录介质的磁阻效应元件的表面上,并且其中上磁极堆叠在用于面对磁阻的前侧电极上 效果元素。 磁阻效应元件和前侧电极之间的连接长度L1比上磁极和磁阻效应元件经由磁隙G彼此面对的面对长度L2短。上磁极和磁 磁阻效应元件具有上磁极和磁阻效应元件在比磁隙G的磁隙长度g1大的距离g2上彼此面对的区域。上磁极可以形成为逐渐间隔开 从磁阻效应元件相对于磁阻效应元件倾斜30度,并且距离g2可以逐渐增加。 利用磁阻效应磁头,可以提高重放输出,并且可以减小磁头的尺寸和功耗。
    • 4. 发明授权
    • Magneto-resistance effect-type magnetic head
    • 磁阻效应型磁头
    • US5825594A
    • 1998-10-20
    • US744639
    • 1996-11-06
    • Koji FukumotoYutaka SodaNorio SaitoTakuji Shibata
    • Koji FukumotoYutaka SodaNorio SaitoTakuji Shibata
    • G11B5/31G11B5/39
    • G11B5/3903G11B5/3153
    • A magneto-resistance effect-type magnetic head according to the present invention can generate a high reproduction output by increasing a quantity of magnetic flux passing across an effective magneto-sensitive zone of a magneto-resistance effect element, while maintaining its inherent functions as a means for preventing unnecessary magnetic flux from entering the MR element or as a recording pole. The magneto-resistance effect-type magnetic head for reproducing signals from a magnetic recording medium, includes a magneto-resistance effect element, upper and lower magnetic layers between which the magneto-resistance effect element is interposed, and a low-permeability magnetic layer provided on at least one of surfaces of the upper and lower magnetic layers which surfaces are opposed to the magneto-resistance effect element, the low-permeability magnetic layer having a magnetic permeability not more than half of a magnetic permeability of the upper or lower magnetic layer.
    • 根据本发明的磁阻效应型磁头可以通过增加穿过磁阻效应元件的有效磁敏区的磁通量产生高再现输出,同时保持其固有功能为 用于防止不必要的磁通量进入MR元件或记录极的装置。 用于再现来自磁记录介质的信号的磁阻效应型磁头包括磁阻效应元件,介于该磁阻效应元件之间的上下磁层和设置有低磁导率磁性层 在与磁阻效应元件相对的上表面和下磁性层的至少一个表面上,低磁导率磁性层的磁导率不超过上磁层或下磁层的导磁率的一半 。
    • 5. 发明授权
    • Magnetoresistance effect thin film head with interconnected electrode
structure
    • 具有互连电极结构的磁阻效应薄膜头
    • US5351158A
    • 1994-09-27
    • US706257
    • 1991-05-28
    • Takuji Shibata
    • Takuji Shibata
    • G11B5/31G11B5/39G11B5/40
    • G11B5/3903G11B5/3106G11B5/40
    • A magnetoresistance-effect thin film head including a substrate, a magnetic field sensing element provided on the substrate, an electrode layer having portions respectively extending from the opposite ends of the magnetic field sensing element to apply a sense current to the magnetic field sensing element so that the sense current will flow in the direction of a signal magnetic field, an insulating layer formed over the magnetic field sensing element, a bias magnetic field creating conductor formed on the insulating layer so as to extend across the magnetic field sensing element, and a magnetic shielding layer shielding the magnetic field sensing element. At least a portion of the electrode layer and a portion of the bias magnetic field creating conductor are included in a conductive pattern.
    • 一种磁电阻效应薄膜头,包括衬底,设置在衬底上的磁场感测元件,电极层,其具有分别从磁场感测元件的相对端延伸的部分,以将感测电流施加到磁场感测元件,从而 感测电流将沿着信号磁场的方向流动,形成在磁场感测元件上的绝缘层,形成在绝缘层上以跨越磁场感测元件的偏置磁场产生导体,以及 磁屏蔽层屏蔽磁场感测元件。 电极层的至少一部分和偏置磁场产生导体的一部分被包括在导电图案中。
    • 6. 发明授权
    • Thin-film magnetic head having magnetic resistance effect stabilizing
layer
    • 具有磁阻效应稳定层的薄膜磁头
    • US5828527A
    • 1998-10-27
    • US820343
    • 1997-03-12
    • Akio TakadaTadayuki HondaTakuji ShibataMoriaki Abe
    • Akio TakadaTadayuki HondaTakuji ShibataMoriaki Abe
    • G11B5/39
    • G11B5/3932G11B5/3903G11B5/3935
    • A thin-film magnetic head improves magnetic stability of a magnetoresistance effect film 13 for further stabilizing the playback output. The thin-film magnetic head has a magnetoresistance effect stabilizing layer 11, a non-magnetic layer 12 and a magnetoresistance effect layer 13 exhibiting the magnetoresistance effect. The magnetoresistance effect stabilizing layer 11 has a hard magnetic film and a soft magnetic film. The magnetoresistance effect stabilizing layer 11 has a non-magnetic film 11c of a non-magnetic material in at least a partial area between a hard magnetic film 11b and a soft magnetic film 11d. In the thin-film magnetic head, there is produced a stable magnetostatic coupling action between the magnetoresistance effect stabilizing layer 11 and the magnetoresistance effect layer 13 for increasing the magnetic stability of the magnetoresistance effect layer 13 operating as a magnetically sensitive portion.
    • 薄膜磁头提高了磁阻效应膜13的磁稳定性,以进一步稳定重放输出。 薄膜磁头具有表现出磁阻效应的磁阻效应稳定层11,非磁性层12和磁阻效应层13。 磁阻效应稳定层11具有硬磁性膜和软磁性膜。 磁阻效应稳定层11在硬磁膜11b和软磁膜11d之间的至少局部区域中具有非磁性材料的非磁性膜11c。 在薄膜磁头中,在磁阻效应稳定层11和磁阻效应层13之间产生稳定的静磁耦合作用,用于增加作为磁敏部分工作的磁阻效应层13的磁稳定性。
    • 8. 发明授权
    • Magnetoresistance effect type thin film magnetic head with noise
reducing electrode
    • 具有降噪电极的磁阻效应型薄膜磁头
    • US5247413A
    • 1993-09-21
    • US11124
    • 1993-01-29
    • Takuji ShibataHideo Suyama
    • Takuji ShibataHideo Suyama
    • G11B5/11G11B5/39
    • G11B5/3903G11B5/11
    • A magnetoresistance effect type thin film magnetic head comprising an MR element with electrodes provided at a fore end and a rear end thereof in the direction to confront a magnetic recording medium, wherein the electrode at the fore end of such MR element is electrically connected to a shielding magnetic layer to thereby eliminate any electrical instability at the fore end of the MR element, hence averting the characteristic instability in a playback mode while minimizing the unsteady generation of noise. The thin film magnetic head further comprises a first conductor having a great capacity and disposed in the proximity of the MR element, and a second conductor having a capacity smaller than that of the first conductor and connected to the fore-end electrode of the MR element. Such first and second conductors are connected to respective ground potentials independently of each other, thereby averting breakdown of the magnetic head that may otherwise be caused by the static charge generated due to the rotation of the magnetic recording medium during the operation.
    • 一种磁电阻效应型薄膜磁头,包括具有设置在其前端和后端的电极的MR元件,以面对磁记录介质的方向,其中该MR元件前端的电极电连接到 屏蔽磁性层,从而消除MR元件前端的任何电不稳定性,从而避免重放模式中的特性不稳定性,同时最小化噪声的不稳定产生。 薄膜磁头还包括具有大容量并且设置在MR元件附近的第一导体和具有小于第一导体的容量的第二导体,并且连接到MR元件的前端电极 。 这样的第一和第二导体彼此独立地连接到相应的接地电位,从而避免磁头的击穿,否则可能由于在操作期间磁记录介质的旋转而产生的静电产生。