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    • 3. 发明授权
    • Device and method for protecting a building against earthquake tremors
    • 用于保护建筑物免受地震震颤的装置和方法
    • US4922667A
    • 1990-05-08
    • US400691
    • 1989-08-30
    • Takuji KoboriShunichi YamadaShuichi Kamagata
    • Takuji KoboriShunichi YamadaShuichi Kamagata
    • E02D27/34E04H9/02
    • E02D27/34E04H9/02E04H9/028
    • A rigidity control device is provided to change the natural resonance of an entire building by varying the rigidity of selected structural members such as pillars, beams, braces or floor and pillar, wall and pillar or beam connection members, joints, and the like. The rigidity of a structural member is controlled by restraining or releasing a member from restraint or by applying a controlled force to the member. These processes are selectively combined so that the rigidity of the whole building and each section thereof is controlled by a computer according to earthquake forecast analysis. Thus, the proper rigidity of a building is determined and provided responsive to earthquake detection to prevent the building from destructive resonance caused by earthquake tremors.
    • 提供一种刚性控制装置,通过改变诸如柱,梁,支架或地板和支柱,墙壁和支柱或梁连接构件,接头等的所选结构构件的刚性来改变整个建筑物的自然共振。 结构构件的刚度通过限制或释放构件免受约束或通过对构件施加受控的力来控制。 这些过程被选择性地组合,使得整个建筑物及其每个部分的刚度由计算机根据地震预报分析来控制。 因此,建筑物的适当刚性被确定并且响应于地震检测而提供,以防止建筑物由地震震颤引起的破坏性共振。
    • 6. 发明授权
    • EL sheet and member for lighting push-button switch
    • EL板和照明按钮开关
    • US07723627B2
    • 2010-05-25
    • US10585002
    • 2005-02-16
    • Shinji HottaShunichi Yamada
    • Shinji HottaShunichi Yamada
    • H01H9/00
    • H01H13/785H01H13/83H01H2201/032H01H2209/002H01H2209/014H01H2209/078H01H2209/082H01H2219/048
    • An EL sheet and a member for lighting a push-button switch capable of emitting light stably and sufficiently for a long period of time without trouble such as non-light emission phenomena and generation of black dot, even if the EL element is subjected to, for example, a drawing process to form into a three dimensional shape, includes a counter electrode layer 15, dielectric layer 14, light-emitting layer 13, and transparent electrode layer 11. An adhesive layer 12 made of adhesive having excellent adhesiveness to the electroconductive polymer is disposed between the transparent electrode layer 11 made of an electroconductive polymer and the light-emitting layer 13. As for the adhesives having excellent adhesiveness, polyester, acrylic, cyanoacrylate, polyolefin, ethylene-vinyl acetate or ethylene ethyl acrylate type adhesive is used. The dielectric layer is made of fluoro type, polyester type or acrylic type resin binder. Furthermore, to improve durability in hot and high humidity environment, a second counter electrode layer 17 and/or a second dielectric layer 17, both having an ion diffusion-preventing function, is/are disposed.
    • EL片和用于点亮能够长时间稳定而充分地发光的按钮开关的部件,无需诸如非发光现象和黑点的产生等问题,即使EL元件受到影响, 例如,形成三维形状的拉伸工序包括对电极层15,电介质层14,发光层13和透明电极层11.由粘合剂制成的粘合层12具有优异的与导电性的粘附性 聚合物设置在由导电聚合物制成的透明电极层11和发光层13之间。对于具有优异粘附性的粘合剂,使用聚酯,丙烯酸,氰基丙烯酸酯,聚烯烃,乙烯 - 乙酸乙烯酯或乙烯丙烯酸乙酯类粘合剂 。 介电层由氟型,聚酯型或丙烯酸型树脂粘合剂制成。 此外,为了提高高温高湿环境下的耐久性,设置具有离子扩散防止功能的第二对置电极层17和/或第二电介质层17。
    • 10. 发明授权
    • Method of making buried stacked transistor-capacitor
    • 埋层堆叠晶体管电容的方法
    • US5100823A
    • 1992-03-31
    • US161925
    • 1988-02-29
    • Shunichi Yamada
    • Shunichi Yamada
    • H01L29/78H01L21/8242H01L27/10H01L27/108
    • H01L27/10864H01L27/10841
    • A buried interconnected transistor and capacitor are formed in a trench etched in a semiconductor wafer having a lightly doped surface layer. The trench extends through the surface layer into the substrate. A dielectric liner is provided in the trench and the trench partially refilled with polysilicon up to the surface layer. The dielectric liner is removed thereby exposing sidewalls of the surface layer in the trench. Further silicon is deposited which forms additional poly material on the poly plug, single crystal material on the exposed epi-sidewalls, and further poly above the single crystal material. A dielectric is formed over the deposited material and a gate electrode deposited over the single crystal portion on the sidewall. The poly plug serves as one plate of a buried trench capacitor and the single crystal material accommodates the channel of the series MOSFET connected to the poly plug capacitor plate.
    • 在具有轻掺杂表面层的半导体晶片中蚀刻的沟槽中形成埋入的互连晶体管和电容器。 沟槽延伸穿过表面层进入衬底。 电介质衬垫设置在沟槽中,并且沟槽部分地重新填充多晶硅直到表面层。 去除电介质衬垫,从而暴露沟槽中的表面层的侧壁。 沉积另外的硅,其在多晶硅塞上形成额外的多晶材料,暴露的外延侧壁上的单晶材料,以及单晶材料上方的另外的多晶硅。 在沉积的材料上形成电介质,沉积在侧壁上的单晶部分上的栅电极。 多晶硅插头用作埋入式沟槽电容器的一个板,并且单晶材料容纳连接到多晶硅电容器板的串联MOSFET的沟道。