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1. 发明申请

US20110190924A1 CONTROL DEVICE FOR CONTROLLING SUBSTRATE PROCESSING APPARATUS AND METHOD THEREFOR 审中-公开
标题翻译：用于控制基板处理装置的控制装置及其方法
公开(公告)号：US20110190924A1
公开(公告)日：2011-08-04
申请号：US12958997
申请日：2010-12-02
申请人： Takeshi Yokouchi , Fumiko Yagi
发明人： Takeshi Yokouchi , Fumiko Yagi
IPC分类号： G06F19/00
CPC分类号： C23C16/52
摘要： An EC includes a substrate processing execution unit that executes an etching process on a product substrate, a dummy processing execution unit that executes a dummy process on a dummy substrate and a decision-making unit that makes a decision as to whether the dummy process is to be executed based upon a temperature-related condition. The decision-making unit obtains temperature-related information to be used to regulate the atmosphere inside the individual PM processing containers and makes a decision as to whether the temperature status inside each processing container is regulated based upon the obtained temperature information. If it is decided by the decision-making unit that the temperature status in the processing container has been regulated, the substrate processing execution unit executes the etching process on a product substrate without executing the dummy process.
摘要翻译： EC包括对产品基板执行蚀刻处理的基板处理执行单元，对虚设基板执行伪处理的伪处理执行单元以及作出关于伪处理是否为根据温度相关条件执行。决策单元获取用于调节各个PM处理容器内部的气氛的温度相关信息，并且基于获得的温度信息来确定每个处理容器内的温度状态是否被调节。如果由决策单元决定处理容器中的温度状态已经被调节，则基板处理执行单元在不执行虚拟处理的情况下对产品基板执行蚀刻处理。

2. 发明申请

US20070181255A1 GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY METHOD 有权
标题翻译：气体供应系统，基板加工设备和气体供应方法
公开(公告)号：US20070181255A1
公开(公告)日：2007-08-09
申请号：US11671115
申请日：2007-02-05
申请人： Shinichiro HAYASAKA , Ken Horiuchi , Fumiko Yagi , Takeshi Yokouchi
发明人： Shinichiro HAYASAKA , Ken Horiuchi , Fumiko Yagi , Takeshi Yokouchi
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： F17D1/02 , C23C16/455 , C23C16/45561 , H01J37/3244 , H01J37/32449 , H01L21/67017 , H01L21/67069 , H01L21/67253 , H01L21/6831 , Y10T137/0318 , Y10T137/8158
摘要： A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.
摘要翻译：一种用于将气体供应到用于处理待处理基板的处理室中的气体供应系统包括：处理气体供应单元; 处理气体供应管线; 第一和第二支线; 分支流量控制单元; 附加气体供应单元; 额外的气体供应线; 和控制单元。控制单元在处理待处理的基板之前分别通过使用处理气体供应单元和附加气体供应单元执行处理气体供应控制和附加气体供应控制，其中附加气体供应控制包括控制，以大于设定流量的初始流量提供额外的气体，然后在经过一段时间后以设定流量供应附加气体。

3. 发明申请

US20070212846A1 SUBSTRATE PROCESSING APPARATUS, METHOD FOR EXAMINING SUBSTRATE PROCESSING CONDITIONS, AND STORAGE MEDIUM 有权
标题翻译：基板处理装置，检查基板处理条件的方法和存储介质
公开(公告)号：US20070212846A1
公开(公告)日：2007-09-13
申请号：US11682490
申请日：2007-03-06
申请人： Takeshi Yokouchi , Fumiko Yagi
发明人： Takeshi Yokouchi , Fumiko Yagi
IPC分类号： H01L21/76
CPC分类号： H01L21/67276 , G05B19/41865 , G05B2219/31443 , G05B2219/32096 , G05B2219/32097 , G05B2219/45031 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67253 , H01L21/67742 , H01L21/67745 , Y02P90/20
摘要： A substrate processing apparatus includes a substrate processing unit for performing a process on substrates; a recipe protection unit for prohibiting processing conditions for the process from being changed while the process is being performed on a specific number of substrates; a protection cancellation unit for canceling a prohibition of a change in the process to allow the processing conditions to be changed while the process is being performed on the specific number of substrates; and a modifying unit for modifying the processing conditions. Further, a method for examining substrate processing conditions includes a protection cancellation step of canceling a prohibition of a change in the process to allow the processing conditions to be changed while the process is being performed on the specific number of substrates; and a modifying step of modifying the processing conditions.
摘要翻译：基板处理装置包括：基板处理单元，用于对基板进行处理; 配方保护单元，用于禁止在对特定数量的基板进行处理时改变处理的处理条件; 保护消除单元，用于在对所述特定数量的基板执行所述处理的同时，取消禁止所述处理的改变以允许改变所述处理条件; 以及修改单元，用于修改处理条件。此外，用于检查基板处理条件的方法包括：保护取消步骤，在对特定数量的基板进行处理时，取消禁止改变处理以允许改变处理条件; 以及修改处理条件的修改步骤。

4. 发明申请

US20070199655A1 SUBSTRATE PROCESSING APPARATUS, METHOD FOR MODIFYING SUBSTRATE PROCESSING CONDITIONS AND STORAGE MEDIUM 审中-公开
标题翻译：基板处理设备，修改基板处理条件和存储介质的方法
公开(公告)号：US20070199655A1
公开(公告)日：2007-08-30
申请号：US11679363
申请日：2007-02-27
申请人： Takeshi Yokouchi , Fumiko Yagi
发明人： Takeshi Yokouchi , Fumiko Yagi
IPC分类号： H01L21/306
CPC分类号： H01L21/67288
摘要： A substrate processing apparatus includes a setting unit for setting substrate processing conditions for a substrate in a substrate processing unit for performing a process on the substrate; a detection unit for detecting an abnormality of the substrate processing unit while the substrate processing unit performs the process on the substrate under the substrate processing conditions; a stopping unit for stopping the process on the substrate of the substrate processing unit if the abnormality is detected; and a modifying unit for modifying the substrate processing conditions for a substrate on which the process is stopped to be performed by the stopping unit. Further, a method for modifying substrate processing conditions includes the steps of setting processing conditions; detecting an abnormality of the substrate processing unit; stopping the process if the abnormality is detected; and modifying the processing conditions for a substrate on which the process is stopped.
摘要翻译：基板处理装置包括：设置单元，用于在基板处理单元中设置基板的基板处理条件，以在基板上进行处理; 检测单元，用于在基板处理单元在基板处理条件下对基板执行处理时检测基板处理单元的异常; 停止单元，如果检测到异常，则停止基板处理单元的基板上的处理; 以及修改单元，用于修改由停止单元执行该处理停止的基板的基板处理条件。此外，用于修改基板处理条件的方法包括设置处理条件的步骤; 检测所述基板处理单元的异常; 如果检测到异常，停止该过程; 以及修改处理停止的基板的处理条件。

5. 发明授权

US08790529B2 Gas supply system, substrate processing apparatus and gas supply method 有权
标题翻译：气体供应系统，基板处理装置和供气方式
公开(公告)号：US08790529B2
公开(公告)日：2014-07-29
申请号：US13012623
申请日：2011-01-24
申请人： Shinichiro Hayasaka , Ken Horiuchi , Fumiko Yagi , Takeshi Yokouchi
发明人： Shinichiro Hayasaka , Ken Horiuchi , Fumiko Yagi , Takeshi Yokouchi
IPC分类号： C23F1/12
CPC分类号： F17D1/02 , C23C16/455 , C23C16/45561 , H01J37/3244 , H01J37/32449 , H01L21/67017 , H01L21/67069 , H01L21/67253 , H01L21/6831 , Y10T137/0318 , Y10T137/8158
摘要： A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.
摘要翻译：一种用于将气体供应到用于处理待处理基板的处理室中的气体供应系统包括：处理气体供应单元; 处理气体供应管线; 第一和第二支线; 分支流量控制单元; 附加气体供应单元; 额外的气体供应线; 和控制单元。控制单元在处理待处理的基板之前分别通过使用处理气体供应单元和附加气体供应单元执行处理气体供应控制和附加气体供应控制，其中附加气体供应控制包括控制，以大于设定流量的初始流量提供额外的气体，然后在经过一段时间后以设定流量供应附加气体。

6. 发明授权

US07896967B2 Gas supply system, substrate processing apparatus and gas supply method 有权
标题翻译：气体供应系统，基板处理装置和供气方式
公开(公告)号：US07896967B2
公开(公告)日：2011-03-01
申请号：US11671115
申请日：2007-02-05
申请人： Shinichiro Hayasaka , Ken Horiuchi , Fumiko Yagi , Takeshi Yokouchi
发明人： Shinichiro Hayasaka , Ken Horiuchi , Fumiko Yagi , Takeshi Yokouchi
IPC分类号： C23C16/52 , H01L21/306
CPC分类号： F17D1/02 , C23C16/455 , C23C16/45561 , H01J37/3244 , H01J37/32449 , H01L21/67017 , H01L21/67069 , H01L21/67253 , H01L21/6831 , Y10T137/0318 , Y10T137/8158
摘要： A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.
摘要翻译：一种用于将气体供应到用于处理待处理基板的处理室中的气体供应系统包括：处理气体供应单元; 处理气体供应管线; 第一和第二支线; 分支流量控制单元; 附加气体供应单元; 额外的气体供应线; 和控制单元。控制单元在处理待处理的基板之前分别通过使用处理气体供应单元和附加气体供应单元执行处理气体供应控制和附加气体供应控制，其中附加气体供应控制包括控制，以大于设定流量的初始流量提供额外的气体，然后在经过一段时间后以设定流量供应附加气体。

7. 发明申请

US20070227658A1 CONTROL DEVICE FOR CONTROLLING SUBSTRATE PROCESSING APPARATUS AND METHOD THEREFOR 审中-公开
标题翻译：用于控制基板处理装置的控制装置及其方法
公开(公告)号：US20070227658A1
公开(公告)日：2007-10-04
申请号：US11692426
申请日：2007-03-28
申请人： Takeshi Yokouchi , Fumiko Yagi
发明人： Takeshi Yokouchi , Fumiko Yagi
IPC分类号： G06F19/00 , H01L21/306 , C23F1/00 , B05C11/00
CPC分类号： C23C16/52
摘要： An EC 200 includes a substrate processing execution unit 280 that executes an etching process on a product substrate, a dummy processing execution unit 275 that executes a dummy process on a dummy substrate and a decision-making unit 270 that makes a decision as to whether the dummy process is to be executed based upon a temperature-related condition. The decision-making unit 270 obtains temperature-related information to be used to regulate the atmosphere inside the individual PM processing containers and makes a decision as to whether the temperature status inside each processing container is regulated based upon the obtained temperature information. If it is decided by the decision-making unit 270 that the temperature status in the processing container has been regulated, the substrate processing execution unit 280 executes the etching process on a product substrate without executing the dummy process.
摘要翻译： EC 200包括对产品基板执行蚀刻处理的基板处理执行单元280，对虚设基板执行虚拟处理的伪处理执行单元275和决定单元270 虚拟过程将根据温度相关条件执行。决策单元270获得用于调节各个PM处理容器内的气氛的温度相关信息，并且基于获得的温度信息来判定每个处理容器内的温度状态是否被调节。如果决策单元270判定处理容器中的温度状态已被调节，则基板处理执行单元280在不执行虚拟处理的情况下对产品基板执行蚀刻处理。

8. 发明授权

US08190281B2 Substrate processing apparatus, method for examining substrate processing conditions, and storage medium 有权
标题翻译：基板处理装置，检查基板处理条件的方法和存储介质
公开(公告)号：US08190281B2
公开(公告)日：2012-05-29
申请号：US11682490
申请日：2007-03-06
申请人： Takeshi Yokouchi , Fumiko Yagi
发明人： Takeshi Yokouchi , Fumiko Yagi
IPC分类号： G06F19/00
CPC分类号： H01L21/67276 , G05B19/41865 , G05B2219/31443 , G05B2219/32096 , G05B2219/32097 , G05B2219/45031 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67253 , H01L21/67742 , H01L21/67745 , Y02P90/20
摘要： A substrate processing apparatus includes a substrate processing unit for performing a process on substrates; a recipe protection unit for prohibiting processing conditions for the process from being changed while the process is being performed on a specific number of substrates; a protection cancellation unit for canceling a prohibition of a change in the process to allow the processing conditions to be changed while the process is being performed on the specific number of substrates; and a modifying unit for modifying the processing conditions. Further, a method for examining substrate processing conditions includes a protection cancellation step of canceling a prohibition of a change in the process to allow the processing conditions to be changed while the process is being performed on the specific number of substrates; and a modifying step of modifying the processing conditions.
摘要翻译：基板处理装置包括：基板处理单元，用于对基板进行处理; 配方保护单元，用于禁止在对特定数量的基板进行处理时改变处理的处理条件; 保护消除单元，用于在对所述特定数量的基板执行所述处理的同时，取消禁止所述处理的改变以允许改变所述处理条件; 以及修改单元，用于修改处理条件。此外，用于检查基板处理条件的方法包括保护取消步骤，在对特定数量的基板进行处理的同时，取消禁止改变处理以允许改变处理条件; 以及修改处理条件的修改步骤。

9. 发明申请

US20110224818A1 SUBSTRATE PROCESSING APPARATUS, METHOD FOR MODIFYING SUBSTRATE PROCESSING CONDITIONS AND STORAGE MEDIUM 审中-公开
标题翻译：基板处理设备，修改基板处理条件和存储介质的方法
公开(公告)号：US20110224818A1
公开(公告)日：2011-09-15
申请号：US13115673
申请日：2011-05-25
申请人： Takeshi YOKOUCHI , Fumiko Yagi
发明人： Takeshi YOKOUCHI , Fumiko Yagi
IPC分类号： G06F17/00
CPC分类号： H01L21/67288
摘要： A substrate processing apparatus includes a setting unit for setting substrate processing conditions for a substrate in a substrate processing unit for performing a process on the substrate; a detection unit for detecting an abnormality of the substrate processing unit while the substrate processing unit performs the process on the substrate under the substrate processing conditions; a stopping unit for stopping the process on the substrate of the substrate processing unit if the abnormality is detected; and a modifying unit for modifying the substrate processing conditions for a substrate on which the process is stopped to be performed by the stopping unit. Further, a method for modifying substrate processing conditions includes the steps of setting processing conditions; detecting an abnormality of the substrate processing unit; stopping the process if the abnormality is detected; and modifying the processing conditions for a substrate on which the process is stopped.
摘要翻译：基板处理装置包括：设置单元，用于在基板处理单元中设置基板的基板处理条件，以在基板上进行处理; 检测单元，用于在基板处理单元在基板处理条件下对基板执行处理时检测基板处理单元的异常; 停止单元，如果检测到异常，则停止基板处理单元的基板上的处理; 以及修改单元，用于修改由停止单元执行该处理停止的基板的基板处理条件。此外，用于修改基板处理条件的方法包括设置处理条件的步骤; 检测所述基板处理单元的异常; 如果检测到异常，停止该过程; 以及修改处理停止的基板的处理条件。

10. 发明申请

US20110120563A1 GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY METHOD 有权
标题翻译：气体供应系统，基板加工设备和气体供应方法
公开(公告)号：US20110120563A1
公开(公告)日：2011-05-26
申请号：US13012623
申请日：2011-01-24
申请人： Shinichiro HAYASAKA , Ken Horiuchi , Fumiko Yagi , Takeshi Yokouchi
发明人： Shinichiro HAYASAKA , Ken Horiuchi , Fumiko Yagi , Takeshi Yokouchi
IPC分类号： F15D1/00
CPC分类号： F17D1/02 , C23C16/455 , C23C16/45561 , H01J37/3244 , H01J37/32449 , H01L21/67017 , H01L21/67069 , H01L21/67253 , H01L21/6831 , Y10T137/0318 , Y10T137/8158
摘要： A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.
摘要翻译：一种用于将气体供应到用于处理待处理基板的处理室中的气体供应系统包括：处理气体供应单元; 处理气体供应管线; 第一和第二支线; 分支流量控制单元; 附加气体供应单元; 额外的气体供应线; 和控制单元。控制单元在处理待处理的基板之前分别通过使用处理气体供应单元和附加气体供应单元执行处理气体供应控制和附加气体供应控制，其中附加气体供应控制包括控制，以大于设定流量的初始流量提供额外的气体，然后在经过一段时间后以设定流量供应附加气体。

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