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1. 发明授权

US09520802B2 Power semiconductor module, power converting apparatus and railway car 有权
标题翻译：功率半导体模块，电力转换设备和铁路车辆
公开(公告)号：US09520802B2
公开(公告)日：2016-12-13
申请号：US13517904
申请日：2010-01-18
申请人： Takeshi Tanaka , Yasushi Nakayama
发明人： Takeshi Tanaka , Yasushi Nakayama
IPC分类号： H02P6/14 , H02M7/00 , B60L3/00 , B60L7/14 , B60L11/18 , B60L15/00
CPC分类号： H02M7/003 , B60L3/003 , B60L7/14 , B60L11/1803 , B60L15/007 , B60L2200/26 , H01L2924/0002 , Y02T10/645 , Y02T10/7005 , H01L2924/00
摘要： A power semiconductor module applied to a power converting apparatus for a railway car includes an element pair formed by connecting an IGBT and an SiC-FWD in anti-parallel to each other and an element pair formed by connecting an Si-IGBT and an SiC-FWD in anti-parallel to each other. The element pair and the element pair are housed in one module and configured as a 2-in-1 module in a manner that the first element pair operates as a positive side arm of the power converting apparatus and the second element pair operates as a negative side arm of the power converting apparatus. The element pairs are formed such that a ratio of an occupied area of SiC-FWD chips to an occupied area of IGBT chips in the element pairs is equal to or higher than 15% and lower than 45%.
摘要翻译：应用于铁路车辆的电力转换装置的功率半导体模块包括通过将IGBT和SiC-FWD彼此反并联连接而形成的元件对，以及通过连接Si-IGBT和SiC- FWD相互反平行。元件对和元件对被容纳在一个模块中并且被配置为二合一模块，以使得第一元件对作为功率转换装置的正侧臂工作，第二元件对作为负值电力转换装置的侧臂。元件对形成为使得SiC-FWD芯片的占用面积与元件对中的IGBT芯片的占有面积的比率等于或高于15％且低于45％。

2. 发明授权

US09129885B2 Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：US09129885B2
公开(公告)日：2015-09-08
申请号：US13521586
申请日：2011-01-12
申请人： Yasushi Nakayama , Takayoshi Miki , Takeshi Oi , Kazuhiro Tada , Shiori Idaka , Shigeru Hasegawa , Takeshi Tanaka
发明人： Yasushi Nakayama , Takayoshi Miki , Takeshi Oi , Kazuhiro Tada , Shiori Idaka , Shigeru Hasegawa , Takeshi Tanaka
IPC分类号： H01L29/24 , H01L25/18 , H01L23/24 , H01L23/31 , H01L23/373 , H01L25/07 , H01L29/16 , H01L23/00
CPC分类号： H01L25/18 , H01L23/24 , H01L23/3135 , H01L23/3735 , H01L24/48 , H01L24/49 , H01L25/072 , H01L29/1608 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01004 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/12031 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15311 , H01L2924/19107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.
摘要翻译：可以抑制由Si半导体构成的开关元件的温度上升的功率半导体模块，并且可以提高冷却模块的效率。为此，功率半导体模块包括由Si半导体制成的开关元件和由宽带隙半导体制成的二极管，二极管被布置在功率半导体模块的中间区域中，并且开关元件布置在两侧或在功率半导体模块的中间区域的外围。

3. 发明申请

US20120286292A1 POWER SEMICONDUCTOR MODULE 有权
标题翻译：功率半导体模块
公开(公告)号：US20120286292A1
公开(公告)日：2012-11-15
申请号：US13521586
申请日：2011-01-12
申请人： Yasushi Nakayama , Takayoshi Miki , Takeshi Oi , Kazuhiro Tada , Shiori Idaka , Shigeru Hasegawa , Takeshi Tanaka
发明人： Yasushi Nakayama , Takayoshi Miki , Takeshi Oi , Kazuhiro Tada , Shiori Idaka , Shigeru Hasegawa , Takeshi Tanaka
IPC分类号： H01L29/24 , H01L29/16 , H01L29/20
CPC分类号： H01L25/18 , H01L23/24 , H01L23/3135 , H01L23/3735 , H01L24/48 , H01L24/49 , H01L25/072 , H01L29/1608 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01004 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/12031 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15311 , H01L2924/19107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.
摘要翻译：可以抑制由Si半导体构成的开关元件的温度上升的功率半导体模块，并且可以提高冷却模块的效率。为此，功率半导体模块包括由Si半导体制成的开关元件和由宽带隙半导体制成的二极管，二极管被布置在功率半导体模块的中间区域中，并且开关元件布置在两侧或在功率半导体模块的中间区域的外围。

4. 发明授权

US06906574B2 Drive circuit for driving power semiconductor device 有权
标题翻译：用于驱动功率半导体器件的驱动电路
公开(公告)号：US06906574B2
公开(公告)日：2005-06-14
申请号：US10627784
申请日：2003-07-28
申请人： Takeshi Ohi , Yasushi Nakayama , Takeshi Tanaka
发明人： Takeshi Ohi , Yasushi Nakayama , Takeshi Tanaka
IPC分类号： H01L27/04 , H01L21/822 , H02M1/00 , H02M1/08 , H03K17/0812 , H03K17/16 , H03K17/28
CPC分类号： H03K17/08128 , H03K17/168
摘要： A drive circuit includes a gate voltage detector that detects a gate-emitter voltage Vge that appears between the gate and emitter of a power semiconductor device throughout a detection time period during which a sampler allows the process of detecting the gate-emitter voltage Vge, and that recognizes the occurrence of an abnormality in the power semiconductor device when the gate-emitter voltage Vge exceeds a reference value. Therefore, the drive circuit can protect the power semiconductor device with higher reliability by promptly detecting the occurrence of a short circuit even when the power semiconductor device is resistant to high voltages.
摘要翻译：驱动电路包括栅极电压检测器，其检测在功率半导体器件的栅极和发射极之间出现的栅 - 发射极电压Vge，在检测时间段期间，采样器允许检测栅 - 发射极电压Vge的处理，以及当栅极 - 发射极间电压Vge超过参考值时，识别功率半导体器件发生异常。因此，即使当功率半导体器件耐高压时，驱动电路可以通过及时检测短路的发生来以更高的可靠性来保护功率半导体器件。

5. 发明申请

US20120256574A1 POWER SEMICONDUCTOR MODULE, POWER CONVERTING APPARATUS AND RAILWAY CAR 有权
标题翻译：功率半导体模块，电力转换设备和铁路车辆
公开(公告)号：US20120256574A1
公开(公告)日：2012-10-11
申请号：US13517904
申请日：2010-01-18
申请人： Takeshi Tanaka , Yasushi Nakayama
发明人： Takeshi Tanaka , Yasushi Nakayama
IPC分类号： H02P6/14 , H01L29/20 , H01L29/16
CPC分类号： H02M7/003 , B60L3/003 , B60L7/14 , B60L11/1803 , B60L15/007 , B60L2200/26 , H01L2924/0002 , Y02T10/645 , Y02T10/7005 , H01L2924/00
摘要： A power semiconductor module applied to a power converting apparatus for a railway car includes an element pair formed by connecting an IGBT and an SiC-FWD in anti-parallel to each other and an element pair formed by connecting an Si-IGBT and an SiC-FWD in anti-parallel to each other. The element pair and the element pair are housed in one module and configured as a 2-in-1 module in a manner that the first element pair operates as a positive side arm of the power converting apparatus and the second element pair operates as a negative side arm of the power converting apparatus. The element pairs are formed such that a ratio of an occupied area of SiC-FWD chips to an occupied area of IGBT chips in the element pairs is equal to or higher than 15% and lower than 45%.
摘要翻译：应用于铁路车辆的电力转换装置的功率半导体模块包括通过将IGBT和SiC-FWD彼此反并联连接而形成的元件对，以及通过连接Si-IGBT和SiC- FWD相互反平行。元件对和元件对被容纳在一个模块中并且被配置为二合一模块，以使得第一元件对作为功率转换装置的正侧臂工作，第二元件对作为负值电力转换装置的侧臂。元件对形成为使得SiC-FWD芯片的占用面积与元件对中的IGBT芯片的占有面积的比率等于或高于15％且低于45％。

6. 发明申请

US20140321012A1 POWER SWITCHING CIRCUIT 有权
标题翻译：电源开关电路
公开(公告)号：US20140321012A1
公开(公告)日：2014-10-30
申请号：US14364092
申请日：2013-02-08
申请人： Yasushi Nakayama
发明人： Yasushi Nakayama
IPC分类号： H02H9/02
CPC分类号： H02H9/025 , H02M1/088 , H02M1/32 , H02M2001/0009 , H03K17/0822 , H03K2217/0027
摘要： A power switching circuit includes a power semiconductor element that includes a main switching element connected in parallel with a main body diode and a sense switching element connected in parallel with a sense body diode; a reverse overcurrent detection circuit that detects an overcurrent flowing in the reverse direction out of currents flowing through a parallel-connection body of the sense switching element and the sense body diode; and a control circuit that drives the gate of the power semiconductor element; wherein when the reverse overcurrent detection circuit detects a reverse overcurrent, the control circuit controls the main switching element and the sense switching element to turn on.
摘要翻译：电源开关电路包括功率半导体元件，功率半导体元件包括与主体二极管并联连接的主开关元件和与感测体二极管并联连接的感测开关元件; 反向过电流检测电路，检测在流过感测开关元件和感测体二极管的并联体的电流中反向流过的电流; 以及驱动所述功率半导体元件的栅极的控制电路; 其中当反向过电流检测电路检测到反向过电流时，控制电路控制主开关元件和感测开关元件导通。

7. 发明授权

US07881086B2 Power conversion device and fabricating method for the same 有权
标题翻译：电力转换装置及其制造方法
公开(公告)号：US07881086B2
公开(公告)日：2011-02-01
申请号：US12293934
申请日：2007-03-08
申请人： Yasushi Nakayama , Takeshi Oi , Kazuyoshi Toya , Akihiro Murahashi
发明人： Yasushi Nakayama , Takeshi Oi , Kazuyoshi Toya , Akihiro Murahashi
IPC分类号： H05K7/20 , H02M7/5387 , H01B5/00
CPC分类号： H02M7/003 , H01L2924/0002 , H02M7/487 , H01L2924/00
摘要： A power conversion device in which the inductance of a main circuit is reduced, a surge voltage is suppressed, elements are properly cooled, which is miniaturized and reduced in weight as a whole, and is excellent in handling performance in a manufacturing process and a maintenance work. A positive side arm unit includes IGBT modules, a coupling diode module, a cooling plate on which the modules are mounted, and a first laminated bus bar connected to the respective modules. A negative side arm unit includes IGBT modules, a coupling diode module, a cooling plate on which the modules are mounted, and a second laminated bus bar connected to the respective modules, and both the laminated bus bars and the capacitors are connected to one another by a third laminated bus bar. Both the cooling plates are parallel to each other so that the mount surfaces thereof are set in the same direction.
摘要翻译：一种功率转换装置，其中主电路的电感减小，浪涌电压被抑制，元件被适当地冷却，其整体小型化和重量减轻，并且在制造过程和维护中的处理性能优异工作。正侧臂单元包括IGBT模块，耦合二极管模块，其上安装模块的冷却板和连接到各个模块的第一层压母线。负侧臂单元包括IGBT模块，耦合二极管模块，安装模块的冷却板和连接到各个模块的第二叠层汇流条，并且两个叠层汇流条和电容器彼此连接通过第三层压母线。两个冷却板彼此平行，使得其安装表面被设置在相同的方向上。

8. 发明申请

US20090080155A1 ELECTRIC POWER CONVERSION APPARATUS 有权
标题翻译：电力转换装置
公开(公告)号：US20090080155A1
公开(公告)日：2009-03-26
申请号：US12293132
申请日：2006-03-31
申请人： Tetsuya Takahashi , Kazuyoshi Toya , Akihiro Murahashi , Yasushi Nakayama , Shigetoshi Ipposhi , Kenichi Hayashi
发明人： Tetsuya Takahashi , Kazuyoshi Toya , Akihiro Murahashi , Yasushi Nakayama , Shigetoshi Ipposhi , Kenichi Hayashi
IPC分类号： H05K7/20
CPC分类号： H01L23/427 , F28D15/0266 , H01L25/115 , H01L2924/0002 , H05K7/20936 , H01L2924/00
摘要： In a conventional cooling device, a heat pipe or a circulation-type liquid cooler provided with a pump is used and therefore, a large space is needed for the cooling device. There is provided a cooling device which includes a plurality of cooling modules 6 having cooling units 6A for cooling heat-generating elements 7 by coolant and radiation units 6C for radiating heat from the coolant heated in the cooling units 6A, the plurality of cooling modules being bubble-pump-type ones in which the coolant is circulated between the radiation units 6C and the cooling units 6A by the coolant being boiled in the cooling units 6A, the radiation units 6C being arranged side by side, and a cooling fan 2 for generating wind blowing the radiation units 6C.
摘要翻译：在传统的冷却装置中，使用具有泵的热管或循环式液体冷却器，因此冷却装置需要较大的空间。提供了一种冷却装置，其包括多个冷却模块6，其具有用于通过冷却剂冷却发热元件7的冷却单元6A和用于从在冷却单元6A中加热的冷却剂散热的辐射单元6C，多个冷却模块为其中冷却剂在冷却单元6A中被沸腾的冷却剂在散热单元6C和冷却单元6A之间循环的气泡泵型，辐射单元6C并排设置;冷却风扇2，用于产生吹风单元6C吹风。

9. 发明申请

US20090065182A1 COOLING DEVICE 审中-公开
标题翻译：冷却装置
公开(公告)号：US20090065182A1
公开(公告)日：2009-03-12
申请号：US12293139
申请日：2006-03-31
申请人： Tetsuya Takahashi , Kazuyoshi Toya , Akihiro Murahashi , Yasushi Nakayama , Shigetoshi Ipposhi , Kenichi Hayashi
发明人： Tetsuya Takahashi , Kazuyoshi Toya , Akihiro Murahashi , Yasushi Nakayama , Shigetoshi Ipposhi , Kenichi Hayashi
IPC分类号： F28D15/00 , H05K7/20
CPC分类号： F28D15/0266 , H01L23/427 , H01L2924/0002 , H01L2924/3011 , H05K7/20936 , H01L2924/00
摘要： There is provided a cooling device which includes a plurality of cooling modules 6 having cooling units 6A for cooling heat-generating elements 7 by coolant and radiation units 6C for radiating heat from the coolant heated in the cooling units 6A, the plurality of cooling modules being bubble-pump-type ones in which the coolant is circulated between the radiation units 6C and the cooling units 6A by the coolant being boiled in the cooling units 6A, the radiation units 6C being arranged side by side, and a cooling fan 2 for generating wind blowing the radiation units 6C.
摘要翻译：提供了一种冷却装置，其包括多个冷却模块6，其具有用于通过冷却剂冷却发热元件7的冷却单元6A和用于从在冷却单元6A中加热的冷却剂散热的辐射单元6C，多个冷却模块为其中冷却剂在冷却单元6A中被沸腾的冷却剂在散热单元6C和冷却单元6A之间循环的气泡泵型，辐射单元6C并排设置;冷却风扇2，用于产生吹风单元6C吹风。

10. 发明申请

US20080015401A1 Magnesium-containing carrier component and application to olefin polymerization 有权
标题翻译：含镁载体组分和应用于烯烃聚合
公开(公告)号：US20080015401A1
公开(公告)日：2008-01-17
申请号：US11822012
申请日：2007-06-29
申请人： Yasushi Nakayama , Hideki Bando , Yoshiho Sonobe , Makoto Mitani , Terunori Fujita
发明人： Yasushi Nakayama , Hideki Bando , Yoshiho Sonobe , Makoto Mitani , Terunori Fujita
IPC分类号： B01J31/14 , C07C2/02
CPC分类号： C08F110/02 , C08F10/00 , C08F4/022 , C08F2500/17 , C08F2500/18 , C08F2500/04 , C08F2500/03 , C08F4/64048
摘要： Solid fine particles which contain a magnesium atom, an aluminum atom and a C1-20 alkoxy group simultaneously, are insoluble in a hydrocarbon solvent, and have an average particle diameter of 3 to 80 μm, and an olefin polymerization catalyst containing the solid fine particles and a transition metal compound in the groups 3 to 11 in the periodic table, exhibit a very high olefin polymerization activity without combination with an expensive organoaluminum oxy compound or organoboron compound and maintains a high activity in polymerization for a long time, and an olefin polymer excellent in powdery properties can be produced by using the olefin polymerization catalyst. The transition metal compound in the groups 3 to 11 in the periodic table includes a transition metal compound having a ligand containing two or more atoms selected from a boron atom, a nitrogen atom, an oxygen atom, a phosphorus atom and a sulfur atom.
摘要翻译：同时含有镁原子，铝原子和C 1-20烷氧基的固体微粒不溶于烃类溶剂，平均粒径为3-80μm，含有周期表中第3〜11组的固体微粒和过渡金属化合物的烯烃聚合催化剂，与贵金属有机铝氧化合物或有机硼化合物结合，表现出非常高的烯烃聚合活性，并保持高聚合活性可以通过使用烯烃聚合催化剂来制造粉末性能优异的烯烃聚合物。元素周期表中第3至11族中的过渡金属化合物包括具有选自硼原子，氮原子，氧原子，磷原子和硫原子中的两个以上原子的配体的过渡金属化合物。

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