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    • 4. 发明申请
    • FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    • 柔性半导体器件及其制造方法
    • US20100283054A1
    • 2010-11-11
    • US12681445
    • 2009-07-30
    • Koichi HiranoSeiichi NakataniTatsuo OgawaTakashi IchiryuTakeshi Suzuki
    • Koichi HiranoSeiichi NakataniTatsuo OgawaTakashi IchiryuTakeshi Suzuki
    • H01L29/786H01L21/336
    • H01L29/78651H01L27/1218H01L27/124H01L27/1266H01L29/41733H01L29/42384H01L29/78603H01L29/7869
    • There is provided a method for manufacturing a flexible semiconductor device characterized by comprising (i) a step of forming an insulating film on the upper surface of metal foil, (ii) a step of forming an extraction electrode pattern on the upper surface of the metal foil, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the extraction electrode pattern, (iv) a step of forming a sealing resin layer on the upper surface of the metal foil in such a manner that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) a step of forming electrodes by etching the metal foil, wherein the metal foil is used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). A TFT element can be fabricated by a simple process because the metal foil serving as the support need not be finally stripped off. Further, a high-temperature process can be introduced to the fabrication of the insulating film and the semiconductor layer because the metal foil is used as the support, whereby the TFT characteristic is improved.
    • 提供了一种制造柔性半导体器件的方法,其特征在于包括:(i)在金属箔的上表面上形成绝缘膜的步骤,(ii)在金属的上表面上形成引出电极图案的步骤 箔,(iii)以半导体层与引出电极图案接触的方式在绝缘膜上形成半导体层的步骤,(iv)在所述绝缘膜的上表面上形成密封树脂层的步骤 金属箔以密封树脂层覆盖半导体层和引出电极图案,以及(v)通过蚀刻金属箔形成电极的步骤,其中金属箔用作绝缘膜的支撑体, (i)〜(iv)中形成的并用作(v)中的电极的构成材料的引出电极图案,半导体层和密封树脂层。 由于作为支撑体的金属箔不需要最终被剥离,所以可以通过简单的工艺制造TFT元件。 此外,由于使用金属箔作为支撑体,因此可以将绝缘膜和半导体层的制造引入高温处理,从而提高TFT特性。
    • 5. 发明申请
    • METHOD FOR MANUFACTURING FLEXIBLE SEMICONDUCTOR DEVICE
    • 制造柔性半导体器件的方法
    • US20100261321A1
    • 2010-10-14
    • US12681399
    • 2009-07-30
    • Koichi HiranoSeiichi NakataniTatsuo Ogawa
    • Koichi HiranoSeiichi NakataniTatsuo Ogawa
    • H01L21/336
    • H01L51/0541H01L51/0004H01L51/0022H01L51/0097H01L51/107Y02E10/549Y02P70/521
    • There is provided a method for manufacturing a flexible semiconductor device. The manufacturing method is characterized by comprising (i) a step of forming an insulating film on the upper surface of a resin film, (ii) a step of forming a pattern of extraction electrodes on the upper surface of the resin film, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the pattern of extraction electrodes, and (iv) a step of forming a sealing resin layer on the upper surface of the resin film in such a manner that the sealing resin layer covers the semiconductor layer and the pattern of extraction electrodes, wherein at least one forming step among the above (i) to (iv) is carried out by a printing method. In the manufacturing method, various layers can be formed by a simple printing process without using a vacuum process, photolithography, or the like.
    • 提供了一种用于制造柔性半导体器件的方法。 (i)在树脂膜的上表面形成绝缘膜的工序,(ii)在树脂膜的上表面形成引出电极的图案的工序,(iii) 以使得半导体层与引出电极的图案接触的方式在绝缘膜上形成半导体层的步骤,以及(iv)在树脂膜的上表面上形成密封树脂层的步骤 密封树脂层覆盖半导体层和提取电极的图案的方式,其中上述(i)至(iv)中的至少一个形成步骤通过印刷方法进行。 在制造方法中,可以通过简单的印刷工艺形成各种层,而不使用真空工艺,光刻等。
    • 6. 发明授权
    • Method for manufacturing flexible semiconductor device
    • 柔性半导体器件的制造方法
    • US08435842B2
    • 2013-05-07
    • US12681399
    • 2009-07-30
    • Koichi HiranoSeiichi NakataniTatsuo Ogawa
    • Koichi HiranoSeiichi NakataniTatsuo Ogawa
    • H01L21/00
    • H01L51/0541H01L51/0004H01L51/0022H01L51/0097H01L51/107Y02E10/549Y02P70/521
    • A method for manufacturing a flexible semiconductor device comprises (i) forming an insulating film on the upper surface of a resin film, (ii) forming a pattern of extraction electrodes on the upper surface of the resin film, (iii) forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the pattern of extraction electrodes, and (iv) forming a sealing resin layer on the upper surface of the resin film in such a manner that the sealing resin layer covers the semiconductor layer and the pattern of extraction electrodes, wherein at least one of the stepsof the above steps (i) to (iv) is carried out by a printing method. With this manufacturing method, various layers can be formed by a simple printing process without using a vacuum process, photolithography, or the like.
    • 一种制造柔性半导体器件的方法包括:(i)在树脂膜的上表面上形成绝缘膜,(ii)在树脂膜的上表面上形成提取电极的图案,(iii)形成半导体层 以使得半导体层与提取电极的图案接触的方式在绝缘膜上,以及(iv)在树脂膜的上表面上形成密封树脂层,使得密封树脂层覆盖 半导体层和提取电极的图案,其中通过印刷方法进行上述步骤(i)至(iv)中的步骤中的至少一个。 利用该制造方法,可以通过简单的印刷工艺形成各种层,而不使用真空工艺,光刻等。