专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06342664B2 Data reproducing apparatus 失效
标题翻译：数据再现装置
公开(公告)号：US06342664B2
公开(公告)日：2002-01-29
申请号：US09736621
申请日：2000-12-14
申请人： Takeshi Sawada , Toru Tanaka , Tadashi Sakai
发明人： Takeshi Sawada , Toru Tanaka , Tadashi Sakai
IPC分类号： G10H700
CPC分类号： G11C7/16 , G11C2207/16
摘要： A music reproducing apparatus is provided by which audio data or the like can be downloaded into an internal memory with ease. A connector portion that can be connected to a predetermined card slot of a data processing apparatus, an audio data memory, an audio reproducing circuit and an audio data outputting section are integrally incorporated within a card-type housing of a music reproducing apparatus and hence the music reproducing apparatus can be easily connected to a data processing apparatus such as a personal computer apparatus.
摘要翻译：提供一种可以容易地将音频数据等下载到内部存储器中的音乐再现装置。可以连接到数据处理装置的预定卡槽的连接器部分，音频数据存储器，音频再现电路和音频数据输出部分一体地结合在音乐再现装置的卡型外壳内，因此音乐再现装置可以容易地连接到诸如个人计算机装置的数据处理装置。

2. 发明授权

US5361407A Double superheterodyne receiver with independent frequency calibration of two local oscillators 失效
标题翻译：双重超外差接收机，具有两个本地振荡器的独立频率校准
公开(公告)号：US5361407A
公开(公告)日：1994-11-01
申请号：US980549
申请日：1992-11-23
申请人： Takeshi Sawada , Tadashi Sakai
发明人： Takeshi Sawada , Tadashi Sakai
IPC分类号： H03J7/02 , H03B1/00 , H03D1/24 , H03D7/16 , H03J7/06 , H04B1/26
CPC分类号： H03D7/161 , H03J7/065 , H04B1/26 , H03B2201/0291 , H03D1/24
摘要： A superheterodyne receiver comprises a variable frequency oscillator of PLL (phase-locked loop) type for implementing a first local oscillator and a variable frequency oscillator not of PLL type for implementing a second local oscillator. At least the frequency of a first locally generated signal is varied at reception to vary a received frequency, the frequency of the first locally generated signal is set at frequency calibration to a level equal to the frequency of a first intermediate-frequency signal, the second intermediate-frequency signal is frequency-converted by a BFO signal to a signal having a frequency of voice band, and the frequency of a second locally generated signal is calibrated to set the frequency of the frequency-converted signal to a specified level.
摘要翻译：超外差接收机包括用于实现第一本地振荡器的PLL（锁相环）类型的可变频率振荡器和不具有用于实现第二本地振荡器的PLL类型的可变频率振荡器。至少第一本地生成的信号的频率在接收时变化以改变接收的频率，将第一本地生成的信号的频率设置为频率校准至等于第一中频信号的频率的电平，第二中频信号由BFO信号被频率转换为具有语音频带频率的信号，并且校准第二本地产生的信号的频率以将频率转换信号的频率设置为指定的电平。

3. 发明授权

US08710672B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08710672B2
公开(公告)日：2014-04-29
申请号：US13541954
申请日：2012-07-05
申请人： Masayuki Katagiri , Yuichi Yamazaki , Makoto Wada , Tadashi Sakai , Naoshi Sakuma , Mariko Suzuki
发明人： Masayuki Katagiri , Yuichi Yamazaki , Makoto Wada , Tadashi Sakai , Naoshi Sakuma , Mariko Suzuki
IPC分类号： H01L21/768
CPC分类号： H01L23/5226 , B82Y40/00 , H01L21/76876 , H01L21/76879 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.
摘要翻译：实施例的半导体器件包括：衬底; 在基板上的第一催化金属膜; 第一催化金属膜上的石墨烯; 石墨烯上的层间绝缘膜; 穿过层间绝缘膜的接触孔; 所述导电膜在所述接触孔的底部，所述导电膜与所述石墨烯电连接; 在所述导电膜上的第二催化金属膜，所述第二催化金属膜用选自氢，氮，氨和稀有气体中的至少一种气体进行等离子体处理; 和第二催化金属膜上的碳纳米管。

4. 发明授权

US08487449B2 Carbon nanotube interconnection and manufacturing method thereof 有权
标题翻译：碳纳米管互连及其制造方法
公开(公告)号：US08487449B2
公开(公告)日：2013-07-16
申请号：US13215463
申请日：2011-08-23
申请人： Makoto Wada , Yuichi Yamazaki , Masayuki Katagiri , Masayuki Kitamura , Atsuko Sakata , Akihiro Kajita , Tadashi Sakai , Naohsi Sakuma
发明人： Makoto Wada , Yuichi Yamazaki , Masayuki Katagiri , Masayuki Kitamura , Atsuko Sakata , Akihiro Kajita , Tadashi Sakai , Naohsi Sakuma
IPC分类号： H01L29/70 , H01L21/4763
CPC分类号： H01L23/53276 , B82Y10/00 , B82Y40/00 , H01L21/76831 , H01L21/76844 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76865 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53295 , H01L2221/1089 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole. A catalyst deactivation film is formed on the catalyst underlying film on the side surface in the hole. A catalyst film is formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole. Carbon nanotubes are formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole.
摘要翻译：根据一个实施例，碳纳米管互连包括第一导电层，绝缘膜，底层催化剂，催化剂失活膜，催化剂膜和碳纳米管。绝缘膜形成在第一导电层上并包括孔。在孔的底面上的第一导电层和孔的侧面的绝缘膜上形成催化剂底膜。在孔中的侧表面上的催化剂底层上形成催化剂失活膜。在孔的底面的催化剂底层和孔的侧面的催化剂失活膜上形成催化剂膜。在孔中形成碳纳米管，碳纳米管包括与孔中底表面上的催化剂膜接触的一端。

5. 发明授权

US08452505B2 Notification apparatus 有权
标题翻译：通知装置
公开(公告)号：US08452505B2
公开(公告)日：2013-05-28
申请号：US12660277
申请日：2010-02-24
申请人： Yuusuke Mizuno , Kazunao Yamada , Tadashi Sakai
发明人： Yuusuke Mizuno , Kazunao Yamada , Tadashi Sakai
IPC分类号： G06F7/70 , G06F19/00 , G06F7/00 , G06G7/76
CPC分类号： B60K35/00 , B60K2350/1092 , B60R16/0236 , B60W30/18127 , B60W2050/146 , Y02T10/84
摘要： A re-generation instruction apparatus has a re-generation instruction computer that receives brake operation information from a re-generation control computer for calculating an energy loss in a total energy from speed reduction by the brake operation of the driver, which is lost by a re-generation brake system. The calculated energy loss is utilized for preparing notification for the driver in various situations such as a pre-travel notification, a during-travel notification and/or an after-travel notification.
摘要翻译：重新生成指令装置具有重新生成指令计算机，其从再生控制计算机接收制动操作信息，用于通过驾驶员的制动操作来计算来自减速的总能量中的能量损失，所述制动操作信息由再生制动系统。所计算的能量损失用于在诸如旅行前通知，旅行前通知和/或旅行后通知的各种情况下为驾驶员准备通知。

6. 发明授权

US08433466B2 Drive control apparatus for hybrid electric vehicle and method for controlling the same 有权
标题翻译：用于混合动力电动车辆的驱动控制装置及其控制方法
公开(公告)号：US08433466B2
公开(公告)日：2013-04-30
申请号：US12800884
申请日：2010-05-25
申请人： Kazunao Yamada , Yusuke Mizuno , Tadashi Sakai , Yasushi Sakuma
发明人： Kazunao Yamada , Yusuke Mizuno , Tadashi Sakai , Yasushi Sakuma
IPC分类号： B60L9/00 , B60L11/00 , G05D1/00
CPC分类号： B60W20/40 , B60K6/46 , B60W10/06 , B60W10/08 , B60W10/26 , B60W20/00 , B60W30/188 , B60W2510/244 , B60W2550/143 , B60W2550/402 , Y02T10/6217 , Y02T10/6291 , Y02T10/7258
摘要： In a drive control apparatus, an information storing unit collects first and second information at predetermined intervals while the vehicle runs and the information storing unit stores the first and second information in a storage device. A schedule effective section extracting unit extracts a schedule effective section from a route from an origin to a destination based on the second information. A control index storage controlling unit defines the schedule of the control index of each of multiple predetermined sections within the schedule effective section based on the first information such that fuel consumption of the engine is reduced in the schedule effective section, wherein the defined schedule of the control index is stored in the storage device. An assist control process unit performs drive control of a motor and an engine based on the schedule of the control index.
摘要翻译：在驱动控制装置中，信息存储单元在车辆行驶时以预定间隔收集第一和第二信息，并且信息存储单元将第一和第二信息存储在存储装置中。调度有效部分提取单元根据第二信息从原点到目的地的路由提取调度有效部分。控制索引存储控制单元基于第一信息来定义调度有效部分内的多个预定部分中的每一个的控制索引的调度，使得在调度有效部分中减少发动机的燃料消耗，其中定义的调度表控制索引存储在存储设备中。辅助控制处理单元基于控制指标的调度来执行电动机和发动机的驱动控制。

7. 发明授权

US08428804B2 In-vehicle charge and discharge control apparatus and partial control apparatus 有权
标题翻译：车载充放电控制装置和部分控制装置
公开(公告)号：US08428804B2
公开(公告)日：2013-04-23
申请号：US12923046
申请日：2010-08-31
申请人： Tadashi Sakai , Kazunao Yamada , Yusuke Mizuno
发明人： Tadashi Sakai , Kazunao Yamada , Yusuke Mizuno
IPC分类号： B60L9/00
CPC分类号： B60L1/00 , B60L7/16
摘要： A temperature increase of a battery of a vehicle in a schedule effect road range is estimated based on an estimate of energy acquirable by regeneration in the schedule effect road range of the vehicle. A special value of the battery upper limit temperature is designated which is obtained by subtracting the temperature increase from a default value of the battery upper limit temperature. A battery upper limit temperature reduction road range is designated which is located just prior to the schedule effect road range. While the vehicle runs the battery upper limit temperature reduction road range, the battery upper limit temperature is set at the special value by being switched from the default value. When the vehicle completes running the battery upper limit temperature reduction road range and starts running the schedule effect road range, the battery upper limit temperature is returned to the default value from the special value.
摘要翻译：基于通过车辆的调度效果道路范围中的再生可获得的能量的估计来估计在时间表效应道路范围内的车辆的电池的温度升高。指定通过从电池上限温度的默认值减去温度上升而获得的电池上限温度的特殊值。指定位于时间表效果道路范围之前的电池上限温度降低道路范围。当车辆运行电池上限温度降低道路范围时，通过从默认值切换将电池上限温度设置为特殊值。当车辆完成电池上限温度降低道路行驶并开始行驶时间表效果道路距离时，电池上限温度从特殊值返回到默认值。

8. 发明授权

US08398927B2 Carbon nanotube manufacturing apparatus, carbon nanotube manufacturing method, and radical producing apparatus 有权
标题翻译：碳纳米管制造装置，碳纳米管制造方法和自由基生成装置
公开(公告)号：US08398927B2
公开(公告)日：2013-03-19
申请号：US12495004
申请日：2009-06-30
申请人： Yuichi Yamazaki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Mariko Suzuki
发明人： Yuichi Yamazaki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Mariko Suzuki
IPC分类号： B01J19/08
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/16
摘要： A carbon nanotube manufacturing apparatus includes a plasma generating unit that generates plasma including ions, radicals, and electrons, from gas; a carbon nanotube manufacturing unit that manufactures carbon nanotubes from the radicals; a shielding electrode unit that is provided between the plasma generating unit and the carbon nanotube manufacturing unit and prevents the ions and the electrons from entering the carbon nanotube manufacturing unit; and a bias applying unit that applies a voltage to the shielding electrode unit, wherein the shielding electrode unit includes at least two first shielding electrodes that are arranged one above another, each of the first shielding electrodes having at least one opening.
摘要翻译：碳纳米管制造装置包括：等离子体产生单元，其从气体产生包括离子，自由基和电子的等离子体; 由自由基制造碳纳米管的碳纳米管制造单元; 设置在等离子体产生单元和碳纳米管制造单元之间并防止离子和电子进入碳纳米管制造单元的屏蔽电极单元; 以及向所述屏蔽电极单元施加电压的偏压施加单元，其中所述屏蔽电极单元包括至少两个彼此排列的第一屏蔽电极，每个所述第一屏蔽电极具有至少一个开口。

9. 发明申请

US20120228614A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120228614A1
公开(公告)日：2012-09-13
申请号：US13413854
申请日：2012-03-07
申请人： Masayuki Kitamura , Makoto Wada , Yuichi Yamazaki , Masayuki Katagiri , Atsuko Sakata , Akihiro Kajita , Tadashi Sakai , Naoshi Sakuma , Ichiro Mizushima
发明人： Masayuki Kitamura , Makoto Wada , Yuichi Yamazaki , Masayuki Katagiri , Atsuko Sakata , Akihiro Kajita , Tadashi Sakai , Naoshi Sakuma , Ichiro Mizushima
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/02639 , H01L21/02491 , H01L21/02502 , H01L21/02527 , H01L21/02645 , H01L21/28556 , H01L21/32051 , H01L21/76846 , H01L21/76877 , H01L23/53276 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.
摘要翻译：根据一个实施例，公开了一种半导体器件。该器件包括半导体衬底和半导体衬底上方的互连。互连包括助催化剂层，助催化剂层上的催化剂层和催化剂层上的石墨烯层。助催化剂层包括与催化剂层接触的部分。该部分具有面平面立方结构，其中（111）面平行于半导体衬底的表面定向。催化剂层具有面平面立方结构，其中（111）面平行于半导体衬底的表面取向。

10. 发明申请

US20110233779A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233779A1
公开(公告)日：2011-09-29
申请号：US13052367
申请日：2011-03-21
申请人： Makoto Wada , Yosuke Akimoto , Yuichi Yamazaki , Masayuki Katagiri , Noriaki Matsunaga , Tadashi Sakai , Naoshi Sakuma
发明人： Makoto Wada , Yosuke Akimoto , Yuichi Yamazaki , Masayuki Katagiri , Noriaki Matsunaga , Tadashi Sakai , Naoshi Sakuma
IPC分类号： H01L23/532 , H01L21/28 , B82Y99/00 , B82Y40/00
CPC分类号： H01L23/5226 , B82Y10/00 , H01L21/7684 , H01L21/76843 , H01L21/76849 , H01L21/76876 , H01L21/76879 , H01L23/53238 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device includes an interlayer insulation film provided on a substrate including a Cu wiring, a via hole formed in the interlayer insulation film on the Cu wiring, a first metal film selectively formed on the Cu wiring in the via hole, functioning as a barrier to the Cu wiring, and functioning as a promoter of carbon nanotube growth, a second metal film formed at least on the first metal film in the via hole, and functioning as a catalyst of the carbon nanotube growth, and carbon nanotubes buried in the via hole in which the first metal film and the second metal film are formed.
摘要翻译：根据一个实施例，半导体器件包括设置在包括Cu布线的基板上的层间绝缘膜，形成在Cu布线上的层间绝缘膜中的通孔，选择性地形成在通孔中的Cu布线上的第一金属膜作为Cu布线的屏障，起到碳纳米管生长的促进剂的功能，至少在通孔中的第一金属膜上形成的第二金属膜，并且用作碳纳米管生长的催化剂，碳埋藏在其中形成有第一金属膜和第二金属膜的通孔中的纳米管。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式