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    • 4. 发明申请
    • Plasma Processing Apparatus
    • 等离子体处理装置
    • US20100294432A1
    • 2010-11-25
    • US12850664
    • 2010-08-05
    • Manabu EDAMURAKen YOSHIOKATakeshi SHIMADA
    • Manabu EDAMURAKen YOSHIOKATakeshi SHIMADA
    • H01L21/44
    • H01L21/67069H01J37/32091H01J37/321
    • A plasma processing apparatus, a processing chamber having one surface formed by a flat-plate-like insulating-material manufactured window, a sample mounting electrode having a sample mounting plane formed on a surface opposed to the insulating-material manufactured window, a gas-inlet for a flat-plate-structured capacitively coupled antenna formed on an outer surface of the insulating-material manufactured window with slits provided in a radial pattern, an inductively coupled antenna formed outside OF the insulating-material manufactured window and performing an inductive coupling with a plasma via the window, the plasma being formed within the processing chamber, a radio-frequency power supply, and an LC circuit. The inductively coupled antenna is configured by a coil which is wound a plurality of times with a direction defined as a longitudinal direction, the direction extending perpendicular to the sample mounting plane.
    • 一种等离子体处理装置,具有由平板状绝缘材料制造的窗口形成的一个表面的处理室,具有形成在与绝缘材料制造窗口相对的表面上的样品安装面的样品安装电极, 用于形成在绝缘材料制造窗口的外表面上的平板结构的电容耦合天线的入口,其具有以径向图案设置的狭缝,在绝缘材料制造的窗口外部形成的电感耦合天线,并且执行与 通过窗口的等离子体,等离子体形成在处理室内,射频电源和LC电路。 电感耦合天线由线圈构成,该线圈被定义为纵向的方向多次缠绕,该方向垂直于样品安装平面延伸。