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    • 4. 发明申请
    • Slave device, master device and stacked device
    • 从设备,主设备和堆叠设备
    • US20050289269A1
    • 2005-12-29
    • US11149171
    • 2005-06-10
    • Takeshi NakayamaEiji TakahashiYoshiyuki SaitoYukihiro IshimaruHideki Iwaki
    • Takeshi NakayamaEiji TakahashiYoshiyuki SaitoYukihiro IshimaruHideki Iwaki
    • G06F13/00G06F13/40G06F13/42
    • G06F13/409G06F13/4226H01L2224/05001H01L2224/05009H01L2224/05568H01L2224/16145H01L2924/00014H01L2224/05599H01L2224/05099
    • A stacked device is disclosed which is easily manufactured while identifying a plurality of devices that are stacked in the stacked device. The stacked device includes a stack of a plurality of slave devices and a master device having identical terminal arrangements. Here, the master device includes command transmission unit configured to input an identification command to a terminal of an adjacent slave device. Furthermore, the slave device includes a through-wire for interconnecting at least one terminal of that same device and an adjacent slave device; command reception unit configured to receive the identification command; and ID (identifier) setting unit configured to set the ID of that same device based on the identification command; the positions of the terminals that are interconnected with the adjacent slave devices differing in each slave device, so that, in each slave device, the slave device command reception unit receive an identification command having a modified value as a result of transiting through-wires that are connected at differing positions in each slave device.
    • 公开了一种容易制造的堆叠式装置,同时识别堆叠在堆叠装置中的多个装置。 堆叠式装置包括多个从装置的堆叠和具有相同端子装置的主装置。 这里,主设备包括命令传输单元,其被配置为向相邻从设备的终端输入识别命令。 此外,从设备包括用于互连同一设备的至少一个终端和相邻从设备的通线; 命令接收单元,被配置为接收所述识别命令; ID(识别符)设定部,其基于所述识别命令来设定同一设备的ID; 与相邻从设备互连的终端的位置在每个从设备中不同,从而在每个从设备中,从设备命令接收单元接收作为转接通线的结果具有修改值的标识命令, 被连接在每个从设备中的不同位置。
    • 5. 发明申请
    • Circuit board and method for manufacturing the same
    • 电路板及其制造方法
    • US20050199420A1
    • 2005-09-15
    • US11075578
    • 2005-03-08
    • Yukihiro IshimaruSeiichi NakataniYoshiyuki Saito
    • Yukihiro IshimaruSeiichi NakataniYoshiyuki Saito
    • H01L21/48H01L23/14H05K1/00H05K1/09H05K1/16H05K3/00H05K3/10H05K3/40H05K3/46
    • H05K3/4038H05K1/167H05K3/105H05K3/4644H05K2201/0326H05K2203/107H05K2203/171Y10T29/49126Y10T29/49155Y10T29/49165
    • In a circuit board according to the present invention, on a substrate, in at least a portion of a phase change layer including a phase change material that is capable of changing alternately between an electrically insulating state and an electrically conductive state, a conductive path is formed that has been put into an electrically conductive state by a phase change in the phase change layer, wherein the phase change material includes a chalcogenide semiconductor, changes between the electrically insulating state and the electrically conductive state by irradiation of laser light, goes into the electrically conductive state in a crystalline phase, and goes into the electrically insulating state in an amorphous phase. In this way, a conductive path is formed by irradiating laser light onto a phase change layer using phase change in a phase change layer formed from a phase change material that is capable of changing alternately between an electrically insulating state and an electrically conductive state, and therefore very small-dimension minute vias and conductors can be formed. Furthermore, subsequent repair, rework, or trimming also is easy.
    • 在根据本发明的电路板中,在基板上,在包括能够在电绝缘状态和导电状态之间交替变化的相变材料的相变层的至少一部分中,导电路径为 形成为通过相变层中的相变而导致导电状态,其中相变材料包括硫族化物半导体,通过激光的照射在电绝缘状态和导电状态之间的变化进入 在结晶相中导电状态,并且在非晶相中进入电绝缘状态。 以这种方式,通过使用在能够在电绝缘状态和导电状态之间交替变化的相变材料形成的相变层中的相变来将激光照射到相变层上形成导电路径,以及 因此可以形成非常小尺寸的微通孔和导体。 此外,随后的修理,返修或修整也很容易。
    • 6. 发明申请
    • CIRCUIT BOARD AND METHOD FOR MANUFACTURING THE SAME
    • 电路板及其制造方法
    • US20070124926A1
    • 2007-06-07
    • US11674454
    • 2007-02-13
    • Yukihiro IshimaruSeiichi NakataniYoshiyuki Saito
    • Yukihiro IshimaruSeiichi NakataniYoshiyuki Saito
    • H05K1/03
    • H05K3/4038H05K1/167H05K3/105H05K3/4644H05K2201/0326H05K2203/107H05K2203/171Y10T29/49126Y10T29/49155Y10T29/49165
    • In a circuit board according to the present invention, on a substrate, in at least a portion of a phase change layer including a phase change material that is capable of changing alternately between an electrically insulating state and an electrically conductive state, a conductive path is formed that has been put into an electrically conductive state by a phase change in the phase change layer, wherein the phase change material includes a chalcogenide semiconductor, changes between the electrically insulating state and the electrically conductive state by irradiation of laser light, goes into the electrically conductive state in a crystalline phase, and goes into the electrically insulating state in an amorphous phase. In this way, a conductive path is formed by irradiating laser light onto a phase change layer using phase change in a phase change layer formed from a phase change material that is capable of changing alternately between an electrically insulating state and an electrically conductive state, and therefore very small-dimension minute vias and conductors can be formed. Furthermore, subsequent repair, rework, or trimming also is easy.
    • 在根据本发明的电路板中,在基板上,在包括能够在电绝缘状态和导电状态之间交替变化的相变材料的相变层的至少一部分中,导电路径为 形成为通过相变层中的相变而导致导电状态,其中相变材料包括硫族化物半导体,通过激光的照射在电绝缘状态和导电状态之间的变化进入 在结晶相中导电状态,并且在非晶相中进入电绝缘状态。 以这种方式,通过使用在能够在电绝缘状态和导电状态之间交替变化的相变材料形成的相变层中的相变来将激光照射到相变层上形成导电路径,以及 因此可以形成非常小尺寸的微通孔和导体。 此外,随后的修理,返修或修整也很容易。