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    • 8. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20110285427A1
    • 2011-11-24
    • US13129980
    • 2010-05-17
    • Masaki KoyamaYutaka Fukuda
    • Masaki KoyamaYutaka Fukuda
    • H03K3/027H01L29/739H01L29/78
    • H01L29/7391H01L24/73H01L29/0834H01L29/7397H01L2224/48472H01L2924/12036H01L2924/13055H01L2924/13091H01L2924/30107H01L2924/00
    • A semiconductor device includes: a semiconductor substrate having a first semiconductor layer and a second semiconductor layer formed on a first surface; a diode having a first electrode and a second electrode; a control pad; a control electrode electrically coupled with the control pad; and an insulation member. The first electrode is formed on a second surface of the first semiconductor layer. The second electrode is formed on the first surface. Current flows between the first electrode and the second electrode. The control pad is arranged on the first surface so that the pad inputs a control signal for controlling an injection amount of a carrier into the first semiconductor layer. The insulation member insulates between the control electrode and the second electrode and between the control electrode and the semiconductor substrate.
    • 半导体器件包括:具有形成在第一表面上的第一半导体层和第二半导体层的半导体衬底; 具有第一电极和第二电极的二极管; 控制板 与所述控制板电耦合的控制电极; 和绝缘构件。 第一电极形成在第一半导体层的第二表面上。 第二电极形成在第一表面上。 电流在第一电极和第二电极之间流动。 控制焊盘设置在第一表面上,使得焊盘输入用于控制载体进入第一半导体层的注入量的控制信号。 绝缘构件在控制电极和第二电极之间以及控制电极和半导体衬底之间绝缘。