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1. 发明申请

US20090311417A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 审中-公开
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20090311417A1
公开(公告)日：2009-12-17
申请号：US12376038
申请日：2007-07-31
申请人： Takeshi Masuda , Masahiko Kajinuma , Yutaka Nishioka , Isao Kimura , Shin Kikuchi , Takakazu Yamada , Koukou Suu
发明人： Takeshi Masuda , Masahiko Kajinuma , Yutaka Nishioka , Isao Kimura , Shin Kikuchi , Takakazu Yamada , Koukou Suu
IPC分类号： C23C16/18
CPC分类号： H01L21/31691 , C04B35/491 , C04B2235/441 , C04B2235/787 , H01G4/1245 , H01G4/33 , H01L21/02197 , H01L21/02271 , H01L28/55 , H01L28/65 , H01L41/1876 , H01L41/316
摘要： A film forming method in which crystalline film having PZT (001) or PZT (100) as a principal component thereof is laminated on a foundation film having a (111) oriented noble metal as a principal component thereof, the method including the steps of: performing reduction treatment on a surface of the foundation film; and forming the crystalline film by an MOCVD method on the surface of the foundation film.
摘要翻译：将具有PZT（001）或PZT（100）作为其主要成分的结晶膜层叠在具有（111）取向的贵金属作为其主要成分的基础膜上的成膜方法，该方法包括以下步骤：在基膜的表面进行还原处理; 并通过MOCVD法在基膜的表面上形成结晶膜。

2. 发明申请

US20100000673A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 审中-公开
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20100000673A1
公开(公告)日：2010-01-07
申请号：US12376073
申请日：2007-07-31
申请人： Takeshi Masuda , Masahiko Kajinuma , Yutaka Nishioka , Isao Kimura , Shin Kikuchi , Takakazu Yamada , Kuokou Suu
发明人： Takeshi Masuda , Masahiko Kajinuma , Yutaka Nishioka , Isao Kimura , Shin Kikuchi , Takakazu Yamada , Kuokou Suu
IPC分类号： B32B38/00 , B05D5/12 , C23C16/44
CPC分类号： H01L21/31691 , C04B35/491 , C04B2235/441 , C04B2235/787 , C23C16/02 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/02197 , H01L21/02271 , H01L28/55 , H01L28/65
摘要： A film forming method in which a crystalline film having PZT (111) as a principal component thereof is laminated on a foundation film having a (111) oriented noble metal as a principal component thereof, the method including the steps of: forming an oxide film whose interplanar spacing is closer to the PZT (111) than to the noble metal, on a surface of the foundation film; and forming the crystalline film on the surface of the foundation film by an MOCVD method.
摘要翻译：将具有PZT（111）作为其主要成分的结晶膜层压在具有（111）取向的贵金属作为其主要成分的基础膜上的成膜方法，该方法包括以下步骤：形成氧化膜其基底膜的表面上的平面间距比贵金属更接近PZT（111）; 并通过MOCVD法在基膜的表面上形成结晶膜。

3. 发明授权

US08262798B2 Shower head, device and method for manufacturing thin films 有权
标题翻译：淋浴头，薄膜制造装置及方法
公开(公告)号：US08262798B2
公开(公告)日：2012-09-11
申请号：US10911639
申请日：2004-08-05
申请人： Takakazu Yamada , Takeshi Masuda , Masahiko Kajinuma , Yutaka Nishioka , Masaki Uematsu , Koukou Suu
发明人： Takakazu Yamada , Takeshi Masuda , Masahiko Kajinuma , Yutaka Nishioka , Masaki Uematsu , Koukou Suu
IPC分类号： C23C16/52 , C23C16/455 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4557 , C23C16/4411 , C23C16/45565 , C23C16/45572
摘要： The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film. The shower head is so designed that the shower head structure is incorporated into an upper cap of a film-forming vessel, that a heat-exchange means is disposed in the upper cap to thus control the temperature of the upper cap and to in turn allow heat-exchange to occur at the contact surface between a disk-like shower plate constituting the shower head surface and the upper cap and that the temperature of the shower head can be controlled in consideration of the film-forming conditions selected. A thin film-manufacturing device is equipped with the shower head in its film-forming vessel and a thin film is prepared using the device.
摘要翻译：本发明提供了一种喷淋头，其温度可以根据所选择的成膜条件进行控制，薄膜制造装置允许稳定且连续地形成仅包含微量颗粒的薄膜，同时再现良好的膜厚分布和组成分布，成膜率高，生产性和批量生产能力优异的方法以及制备这种膜的方法。淋浴头被设计成将喷头结构结合到成膜容器的上盖中，将热交换装置设置在上盖中，从而控制上盖的温度，并且进而允许考虑到所选择的成膜条件，可以在构成淋浴头表面的盘形淋浴板和上盖之间的接触表面处发生热交换，并且可以控制喷淋头的温度。薄膜制造装置在其成膜容器中配备有喷头，并且使用该装置制备薄膜。

4. 发明申请

US20050059246A1 Device and method for manufacturing thin films 有权
标题翻译：薄膜制造装置及方法
公开(公告)号：US20050059246A1
公开(公告)日：2005-03-17
申请号：US10910807
申请日：2004-08-04
申请人： Takakazu Yamada , Takeshi Masuda , Masahiko Kajinuma , Yutaka Nishioka , Masaki Uematsu , Koukou Suu
发明人： Takakazu Yamada , Takeshi Masuda , Masahiko Kajinuma , Yutaka Nishioka , Masaki Uematsu , Koukou Suu
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , H01L21/302 , H01L21/461
CPC分类号： C23C16/4557 , C23C16/4401 , C23C16/4412 , C23C16/45519 , C23C16/45565 , C23C16/45572
摘要： The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level. The device is one serving as a CVD device in which a film-forming gas is introduced into a reaction chamber from the upper portion of the chamber serving as a reaction space, through a shower head and a film is formed on a heated substrate, wherein the device is so designed that the upper reaction space is constructed by the substrate-supporting stage which is free of any rotational motion or free of any elevating motion, the shower head and a deposition-inhibitory plate, that the substrate-supporting stage and the deposition-inhibitory plate are so arranged as to form, between them, a concentric gap or interstice serving as a gas-exhaust path through which an inert gas can flow from the upper portion of the gas-exhaust path along the deposition-inhibitory plate and that a lower space is formed on the secondary side of the gas-exhaust path.
摘要翻译：本发明提供一种薄膜制造装置和薄膜制造方法，其制造能力和生产率优异，能够长时间稳定且连续地生产薄膜，同时再生良好的薄膜厚度分布，良好的组成分布和高成膜速率，并且将成膜期间产生的颗粒数控制到更低的水平。该装置是用作CVD装置的装置，其中成膜气体通过喷淋头从用作反应空间的室的上部引入反应室，并且在加热的基板上形成膜，其中该设备被设计成使得上反应空间由没有任何旋转运动或没有任何升高运动的基板支撑台，淋浴喷头和防沉积板构成，基板支撑台和沉积抑制板被布置成在它们之间形成用作气体排出路径的同心间隙或间隙，惰性气体可以沿着沉积抑制板从气体排出路径的上部流动，在排气路径的次级侧形成较低的空间。

5. 发明申请

US20050056217A1 Shower head, device and method for manufacturing thin films 有权
标题翻译：淋浴头，薄膜制造装置及方法
公开(公告)号：US20050056217A1
公开(公告)日：2005-03-17
申请号：US10911639
申请日：2004-08-05
申请人： Takakazu Yamada , Takeshi Masuda , Masahiko Kajinuma , Yutaka Nishioka , Masaki Uematsu , Koukou Suu
发明人： Takakazu Yamada , Takeshi Masuda , Masahiko Kajinuma , Yutaka Nishioka , Masaki Uematsu , Koukou Suu
IPC分类号： H01L21/20 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/205 , C23C16/00
CPC分类号： C23C16/4557 , C23C16/4411 , C23C16/45565 , C23C16/45572
摘要： The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film. The shower head is so designed that the shower head structure is incorporated into an upper cap of a film-forming vessel, that a heat-exchange means is disposed in the upper cap to thus control the temperature of the upper cap and to in turn allow heat-exchange to occur at the contact surface between a disk-like shower plate constituting the shower head surface and the upper cap and that the temperature of the shower head can be controlled in consideration of the film-forming conditions selected. A thin film-manufacturing device is equipped with the shower head in its film-forming vessel and a thin film is prepared using the device.
摘要翻译：本发明提供了一种喷淋头，其温度可以根据所选择的成膜条件进行控制，薄膜制造装置允许稳定且连续地形成仅包含微量颗粒的薄膜，同时再现良好的膜厚分布和组成分布，成膜率高，生产性和批量生产能力优异的方法以及制备这种膜的方法。淋浴头被设计成将喷头结构结合到成膜容器的上盖中，将热交换装置设置在上盖中，从而控制上盖的温度，并且进而允许考虑到所选择的成膜条件，可以在构成淋浴头表面的盘形淋浴板和上盖之间的接触表面处发生热交换，并且可以控制喷淋头的温度。薄膜制造装置在其成膜容器中配备有喷头，并且使用该装置制备薄膜。

6. 发明授权

US07618493B2 Device and method for manufacturing thin films 有权
标题翻译：薄膜制造装置及方法
公开(公告)号：US07618493B2
公开(公告)日：2009-11-17
申请号：US10910807
申请日：2004-08-04
申请人： Takakazu Yamada , Takeshi Masuda , Masahiko Kajinuma , Yutaka Nishioka , Masaki Uematsu , Koukou Suu
发明人： Takakazu Yamada , Takeshi Masuda , Masahiko Kajinuma , Yutaka Nishioka , Masaki Uematsu , Koukou Suu
IPC分类号： C23C16/00 , C23C16/455
CPC分类号： C23C16/4557 , C23C16/4401 , C23C16/4412 , C23C16/45519 , C23C16/45565 , C23C16/45572
摘要： The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level. The device is one serving as a CVD device in which a film-forming gas is introduced into a reaction chamber from the upper portion of the chamber serving as a reaction space, through a shower head and a film is formed on a heated substrate, wherein the device is so designed that the upper reaction space is constructed by the substrate-supporting stage which is free of any rotational motion or free of any elevating motion, the shower head and a deposition-inhibitory plate, that the substrate-supporting stage and the deposition-inhibitory plate are so arranged as to form, between them, a concentric gap or interstice serving as a gas-exhaust path through which an inert gas can flow from the upper portion of the gas-exhaust path along the deposition-inhibitory plate and that a lower space is formed on the secondary side of the gas-exhaust path.
摘要翻译：本发明提供一种薄膜制造装置和薄膜制造方法，其制造能力和生产率优异，能够长时间稳定且连续地生产薄膜，同时再生良好的薄膜厚度分布，良好的组成分布和高成膜速率，并且将成膜期间产生的颗粒数控制到更低的水平。该装置是用作CVD装置的装置，其中成膜气体通过喷淋头从用作反应空间的室的上部引入反应室，并且在加热的基板上形成膜，其中该设备被设计成使得上反应空间由没有任何旋转运动或没有任何升高运动的基板支撑台，淋浴喷头和防沉积板构成，基板支撑台和沉积抑制板被布置成在它们之间形成用作气体排出路径的同心间隙或间隙，惰性气体可以沿着沉积抑制板从气体排出路径的上部流动，在排气路径的次级侧形成较低的空间。

7. 发明申请

US20070054472A1 Apparatus for preparing oxide thin film and method for preparing the same 审中-公开
标题翻译：氧化物薄膜的制备装置及其制备方法
公开(公告)号：US20070054472A1
公开(公告)日：2007-03-08
申请号：US10569470
申请日：2004-08-25
申请人： Yutaka Nishioka , Masahiko Kajinuma , Takakazu Yamada , Takeshi Masuda , Masaki Uematsu , Koukou Suu
发明人： Yutaka Nishioka , Masahiko Kajinuma , Takakazu Yamada , Takeshi Masuda , Masaki Uematsu , Koukou Suu
IPC分类号： C23C16/00 , H01L21/20
CPC分类号： H01L21/02271 , C23C16/409 , C23C16/4482 , C23C16/452 , H01L21/02164 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02197 , H01L21/3165
摘要： An oxide thin film having good characteristic properties is prepared by reducing an occurrence of an oxygen defect of the resulting oxide thin film and promoting the epitaxial growth of the film. The oxide thin film is prepared by admixing a raw gas, a carrier gas and an oxidation gas and supplying the resulting gas mixture on a heated substrate placed in a reaction chamber from a shower plate through a gas activating means which is maintained, by a heating means, at such a temperature that any liquefaction, deposition and film-formation of a raw material are never caused, to thus make the oxidation gas react with one another and to prepare the oxide thin film on the substrate. In this case, a rate of the oxidation gas flow rate is not less than 60% on the basis of the gas mixture. Furthermore, a flow rate of oxidation gas used for forming an initial layer by nucleation is less than 60%, and a flow rate of oxidation gas used in a subsequent film-forming process for forming a second layer is not less than 60%. Furthermore, in an apparatus for preparing the oxide thin film, a heating means is arranged between a gas-mixing unit and a shower plate.
摘要翻译：通过减少所得氧化物薄膜的氧缺陷的发生并促进膜的外延生长，制备具有良好特性的氧化物薄膜。氧化物薄膜是通过混合原料气体，载气和氧化气体制备的，并将得到的气体混合物通过气体激活装置从放置在喷淋板的反应室中的加热基材上提供，气体活化装置通过加热意味着在不会引起原料的任何液化，沉积和成膜的温度下，从而使氧化气体彼此反应并在基底上制备氧化物薄膜。在这种情况下，基于气体混合物，氧化气体流量的比率不小于60％。此外，用于通过成核形成初始层的氧化气体的流量小于60％，并且在随后的用于形成第二层的成膜工艺中使用的氧化气体的流量不小于60％。此外，在用于制备氧化物薄膜的装置中，在气体混合单元和淋浴板之间设置加热装置。

8. 发明授权

US08168001B2 Film-forming apparatus and film-forming method 有权
标题翻译：成膜装置及成膜方法
公开(公告)号：US08168001B2
公开(公告)日：2012-05-01
申请号：US10417139
申请日：2003-04-17
申请人： Hiroto Uchida , Takehito Jinbo , Takeshi Masuda , Masahiko Kajinuma , Takakazu Yamada , Masaki Uematsu , Koukou Suu , Isao Kimura
发明人： Hiroto Uchida , Takehito Jinbo , Takeshi Masuda , Masahiko Kajinuma , Takakazu Yamada , Masaki Uematsu , Koukou Suu , Isao Kimura
IPC分类号： C23C16/00 , C23C16/455 , H01L21/306
CPC分类号： C23C16/45512 , C23C16/409 , C23C16/4402 , C23C16/455 , C23C16/45519
摘要： Film-forming apparatus including a film-forming vacuum chamber having a stage for a substrate, a chamber for mixing gas comprising a raw gas and a reactive gas connected to the film-forming chamber, a chamber for vaporizing the raw material, and a gas head for introducing the mixed gas into the film-forming chamber, disposed on the upper face of the film-forming chamber and opposed to the stage. Particle traps with controllable temperatures are positioned between the vaporization chamber and the mixing chamber and on the downstream side of the mixing chamber. When forming a thin film with the apparatus, a reactive gas and/or a carrier gas are passed through the film-forming chamber while opening a valve in a by-pass line, connecting the primary side to the secondary side of the particle trap arranged at the downstream side of the mixing chamber. The valve is then closed and the film-forming operation is initiated.
摘要翻译：一种成膜装置，其特征在于，具备：具有基板台的成膜用真空室，将含有原料气体的气体和与所述成膜室连接的反应性气体混合的室，将所述原料蒸发的室，用于将混合气体引入成膜室，其设置在成膜室的上表面上并且与该台相对。具有可控温度的颗粒捕集器位于蒸发室和混合室之间以及混合室的下游侧。当用该装置形成薄膜时，反应气体和/或载气通过成膜室，同时打开旁通管线中的阀，将初级侧与次级侧连接，将颗粒捕集器的二次侧排列在混合室的下游侧。然后关闭阀门，并开始成膜操作。

9. 发明申请

US20050199182A1 Apparatus for the preparation of film 有权
标题翻译：薄膜制备装置
公开(公告)号：US20050199182A1
公开(公告)日：2005-09-15
申请号：US10612149
申请日：2003-07-03
申请人： Takeshi Masuda , Masahiko Kajinuma , Takakazu Yamada , Hiroto Uchida , Masaki Uematsu , Koukou Suu
发明人： Takeshi Masuda , Masahiko Kajinuma , Takakazu Yamada , Hiroto Uchida , Masaki Uematsu , Koukou Suu
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/409 , C23C16/45512 , C23C16/45519 , C23C16/45589 , C30B25/02 , C30B25/14 , C30B29/60
摘要： A thin film-forming apparatus, for ensuring uniform plane distribution of properties of a film formed on a substrate surface, has a gas-supply port 24a supplying a gas mixture from a gas-mixing chamber 24 to a shower head 25. The port is arranged at the peripheral portion on the bottom face of the gas-mixing chamber so that the gas mixture flows from the upper peripheral region of the head towards the center thereof. An exhaust port 32 discharging the exhaust gas generated in the film-forming chamber 3 is arranged at a position lower than the level of a stage 31 during film-formation directing the exhaust gas towards the side wall of the chamber 3 and discharging the exhaust gas through the exhaust port. The stage 31 is designed to move freely up and down to adjust the distance between the shower head 25 and substrate S.
摘要翻译：用于确保形成在基板表面上的膜的性质的均匀平面分布的薄膜形成装置具有将气体混合物从气体混合室24供应到喷淋头25的供气口24a。该端口布置在气体混合室的底面的周边部分处，使得气体混合物从头部的上周边区域朝向其中心流动。将成膜室3内产生的废气排出的排气口32配置在低于气缸台31的高度的位置，在成膜期间将排气朝着室3的侧壁排出，排出废气通过排气口。舞台31被设计成上下移动以调节淋浴头25和基底S之间的距离。

10. 发明授权

US08591655B2 Apparatus for the preparation of film 有权
标题翻译：薄膜制备装置
公开(公告)号：US08591655B2
公开(公告)日：2013-11-26
申请号：US10612149
申请日：2003-07-03
申请人： Takeshi Masuda , Masahiko Kajinuma , Takakazu Yamada , Hiroto Uchida , Masaki Uematsu , Koukou Suu
发明人： Takeshi Masuda , Masahiko Kajinuma , Takakazu Yamada , Hiroto Uchida , Masaki Uematsu , Koukou Suu
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/409 , C23C16/45512 , C23C16/45519 , C23C16/45589 , C30B25/02 , C30B25/14 , C30B29/60
摘要： A thin film-forming apparatus, for ensuring uniform plane distribution of properties of a film formed on a substrate surface, has a gas-supply port 24a supplying a gas mixture from a gas-mixing chamber 24 to a shower head 25. The port is arranged at the peripheral portion on the bottom face of the gas-mixing chamber so that the gas mixture flows from the upper peripheral region of the head towards the center thereof. An exhaust port 32 discharging the exhaust gas generated in the film-forming chamber 3 is arranged at a position lower than the level of a stage 31 during film-formation directing the exhaust gas towards the side wall of the chamber 3 and discharging the exhaust gas through the exhaust port. The stage 31 is designed to move freely up and down to adjust the distance between the shower head 25 and substrate S.
摘要翻译：用于确保形成在基板表面上的膜的性质的均匀平面分布的薄膜形成装置具有将气体混合物从气体混合室24供应到喷淋头25的气体供应口24a。该端口是布置在气体混合室的底面的周边部分，使得气体混合物从头部的上周边区域朝向其中心流动。将成膜室3内产生的废气排出的排气口32配置在低于气缸台31的高度的位置，在成膜期间将排气朝着室3的侧壁排出，排出废气通过排气口。舞台31被设计成上下移动以调节淋浴头25和基底S之间的距离。

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