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1. 发明授权

US07428162B2 Memory device including a plurality of capacitors 失效
标题翻译：存储器件包括多个电容器
公开(公告)号：US07428162B2
公开(公告)日：2008-09-23
申请号：US11639174
申请日：2006-12-14
申请人： Takeshi Kijima , Yasuaki Hamada , Tatsuya Shimoda
发明人： Takeshi Kijima , Yasuaki Hamada , Tatsuya Shimoda
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , H01L27/11507 , H01L28/56
摘要： A memory device including: a lower electrode; a ferroelectric layer formed above the lower electrode; a charge compensation layer formed above the ferroelectric layer and including an oxide having a composition differing from a composition of the ferroelectric layer; and upper electrodes formed above the charge compensation layer. The upper electrodes includes: a saturated polarization forming electrode used for forming a domain polarized to saturation in a predetermined direction in a predetermined region of the ferroelectric layer; a writing electrode disposed apart from the saturated polarization forming electrode; and a reading electrode disposed apart from the writing electrode.
摘要翻译：一种存储装置，包括：下电极; 形成在下电极上方的铁电层; 电荷补偿层，其形成在所述铁电层的上方，并且具有与所述铁电体层的组成不同的组成的氧化物; 以及形成在电荷补偿层上方的上电极。上电极包括：饱和极化形成电极，用于在铁电层的预定区域中形成在预定方向上偏振到饱和的畴; 写入电极，与饱和偏振形成电极分开设置; 以及与写入电极分开设置的读取电极。

2. 发明申请

US20070170479A1 Polarization transfer device and control method therefor 失效
标题翻译：极化传输装置及其控制方法
公开(公告)号：US20070170479A1
公开(公告)日：2007-07-26
申请号：US11653231
申请日：2007-01-16
申请人： Masami Hashimoto , Takeshi Kijima , Yasuaki Hamada , Akio Konishi , Tatsuya Shimoda
发明人： Masami Hashimoto , Takeshi Kijima , Yasuaki Hamada , Akio Konishi , Tatsuya Shimoda
IPC分类号： H01L29/94
CPC分类号： H01L28/55
摘要： A polarization transfer device includes a ferroelectric thin film formed continuously as one piece; a plurality of polarization switches formed by placing the ferroelectric thin film between a first gate electrode and a second gate electrode; and a plurality of polarization accumulators formed by placing the ferroelectric thin film between a first electrode plate and a second electrode plate, wherein the plurality of polarization switches and the plurality of polarization accumulators are arranged alternately.
摘要翻译：极化转移装置包括连续形成为一体的铁电薄膜; 通过将铁电薄膜放置在第一栅极电极和第二栅极电极之间而形成的多个极化开关; 以及通过将铁电薄膜放置在第一电极板和第二电极板之间而形成的多个偏振累积器，其中多个偏振开关和多个偏振累积器交替布置。

3. 发明授权

US07504682B2 Polarization transfer device and control method therefor 失效
标题翻译：极化传输装置及其控制方法
公开(公告)号：US07504682B2
公开(公告)日：2009-03-17
申请号：US11653231
申请日：2007-01-16
申请人： Masami Hashimoto , Takeshi Kijima , Yasuaki Hamada , Akio Konishi , Tatsuya Shimoda
发明人： Masami Hashimoto , Takeshi Kijima , Yasuaki Hamada , Akio Konishi , Tatsuya Shimoda
IPC分类号： H01L27/115
CPC分类号： H01L28/55
摘要： A polarization transfer device includes a ferroelectric thin film formed continuously as one piece; a plurality of polarization switches formed by placing the ferroelectric thin film between a first gate electrode and a second gate electrode; and a plurality of polarization accumulators formed by placing the ferroelectric thin film between a first electrode plate and a second electrode plate, wherein the plurality of polarization switches and the plurality of polarization accumulators are arranged alternately.
摘要翻译：极化转移装置包括连续形成为一体的铁电薄膜; 通过将铁电薄膜放置在第一栅极电极和第二栅极电极之间而形成的多个极化开关; 以及通过将铁电薄膜放置在第一电极板和第二电极板之间而形成的多个偏振累积器，其中多个偏振开关和多个偏振累积器交替布置。

4. 发明申请

US20070138522A1 Memory device 失效
标题翻译：内存设备
公开(公告)号：US20070138522A1
公开(公告)日：2007-06-21
申请号：US11639174
申请日：2006-12-14
申请人： Takeshi Kijima , Yasuaki Hamada , Tatsuya Shimoda
发明人： Takeshi Kijima , Yasuaki Hamada , Tatsuya Shimoda
IPC分类号： H01L29/94
CPC分类号： G11C11/22 , H01L27/11507 , H01L28/56
摘要： A memory device including: a lower electrode; a ferroelectric layer formed above the lower electrode; a charge compensation layer formed above the ferroelectric layer and including an oxide having a composition differing from a composition of the ferroelectric layer; and upper electrodes formed above the charge compensation layer. The upper electrodes includes: a saturated polarization forming electrode used for forming a domain polarized to saturation in a predetermined direction in a predetermined region of the ferroelectric layer; a writing electrode disposed apart from the saturated polarization forming electrode; and a reading electrode disposed apart from the writing electrode.
摘要翻译：一种存储装置，包括：下电极; 形成在下电极上方的铁电层; 电荷补偿层，其形成在所述铁电层的上方，并且具有与所述铁电体层的组成不同的组成的氧化物; 以及形成在电荷补偿层上方的上电极。上电极包括：饱和极化形成电极，用于在铁电层的预定区域中形成在预定方向上偏振到饱和的畴; 写入电极，与饱和偏振形成电极分开设置; 以及与写入电极分开设置的读取电极。

5. 发明授权

US07710004B2 Insulating target material, method of manufacturing insulating target material, conductive complex oxide film, and device 有权
标题翻译：绝缘靶材料，绝缘靶材料的制造方法，导电性复合氧化膜及其装置
公开(公告)号：US07710004B2
公开(公告)日：2010-05-04
申请号：US12400859
申请日：2009-03-10
申请人： Koji Ohashi , Setsuya Iwashita , Takeshi Kijima , Yasuaki Hamada
发明人： Koji Ohashi , Setsuya Iwashita , Takeshi Kijima , Yasuaki Hamada
IPC分类号： H01L41/04 , H01L41/047
CPC分类号： C23C14/3414 , B41J2/161 , B41J2/1646 , C23C14/088 , H01L21/31691 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L41/0478 , H01L41/0973 , H01L41/29 , H01L2224/45144 , H01L2224/48091 , H01L2924/13091 , H01L2924/16195 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO3, the insulating target material including an oxide of an element A, an oxide of an element B, and at least one of an Si compound and a Ge compound.
摘要翻译：一种用于获得由通式ABO3表示的导电复合氧化物膜的绝缘靶材料，包括元素A的氧化物，元素B的氧化物，以及Si化合物和Ge化合物中的至少一种的绝缘靶材料。

6. 发明授权

US07303828B2 Ferroelectric film, method of manufacturing the same, ferroelectric memory and piezoelectric device 有权
标题翻译：铁电体膜，其制造方法，铁电存储器和压电装置
公开(公告)号：US07303828B2
公开(公告)日：2007-12-04
申请号：US10807427
申请日：2004-03-24
申请人： Takeshi Kijima , Hiromu Miyazawa , Yasuaki Hamada , Eiji Natori
发明人： Takeshi Kijima , Hiromu Miyazawa , Yasuaki Hamada , Eiji Natori
IPC分类号： B32B9/00
CPC分类号： H01L21/02197 , C23C18/1216 , C23C18/1254 , C23C30/00 , C30B5/00 , C30B29/30 , C30B29/32 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L41/0805 , H01L41/1876 , H01L41/1878 , H01L41/318
摘要： A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)O3 ferroelectric which includes at least four-fold coordinated Si4+ or Ge4+ in the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.
摘要翻译：在Pb（Zr，Ti）O 3 Fe铁电体的B位置中包含至少包含至少一种Nb，V和W中的至少一种的5〜40mol％的铁电体膜，其至少包括浓度为1％以上的铁电体钙钛矿材料的A位离子中的4重配位Si 4+或4+ 4+。这使得能够显着提高铁电体膜的可靠性。

7. 发明申请

US20070119343A1 Complex metal oxide raw material composition 审中-公开
标题翻译：复合金属氧化物原料组成
公开(公告)号：US20070119343A1
公开(公告)日：2007-05-31
申请号：US11605561
申请日：2006-11-28
申请人： Takeshi Kijima , Yasuaki Hamada , Mayumi Ueno
发明人： Takeshi Kijima , Yasuaki Hamada , Mayumi Ueno
IPC分类号： C23C16/40
CPC分类号： H01L21/02194 , C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/82 , C01P2006/40 , C01P2006/42 , C04B35/493 , C04B35/6264 , C04B35/6325 , C04B35/634 , C04B2235/3251 , C04B2235/3287 , C04B2235/3418 , C04B2235/3427 , C04B2235/441 , C04B2235/449 , C04B2235/768 , C23C18/1216 , C23C18/1225 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02205 , H01L21/02282 , H01L21/02337 , H01L21/02356 , H01L21/31691 , H01L41/1876
摘要： A complex metal oxide raw material composition used for forming a complex metal oxide, the complex metal oxide being shown by a general formula AB1-xCxO3, wherein an element A includes at least Pb, an element B includes at least one of Zr, Ti, V, W, and Hf, and an element C includes at least one of Nb and Ta, and the raw material composition including: at least one of a thermally-decomposable organometallic compound including the element A, the element B, or the element C, a hydrolyzable organometallic compound including the element A, the element B, or the element C, and a partial hydrolyzate and/or a polycondensate of the hydrolyzable organometallic compound; at least one of a polycarboxylic acid and a polycarboxylic acid ester; and an organic solvent.
摘要翻译：用于形成复合金属氧化物的复合金属氧化物原料组合物，所述复合金属氧化物由通式AB 1-x C x O 3 3 其中元素A至少包括Pb，元素B包括Zr，Ti，V，W和Hf中的至少一种，元素C包括Nb和Ta中的至少一种，原料组合物，其包括：包含元素A，元素B或元素C的可热分解的有机金属化合物中的至少一种，包含元素A，元素B或元素C的可水解的有机金属化合物，以及部分水解产物和 /或可水解有机金属化合物的缩聚物; 多元羧酸和多元羧酸酯中的至少一种; 和有机溶剂。

8. 发明申请

US20070075355A1 CAPACITOR AND ITS MANUFACTURING METHOD, FERROELECTRIC MEMORY DEVICE, ACTUATOR, AND LIQUID JETTING HEAD 有权
标题翻译：电容器及其制造方法，电磁记忆装置，致动器和液体喷射头
公开(公告)号：US20070075355A1
公开(公告)日：2007-04-05
申请号：US11531424
申请日：2006-09-13
申请人： Yasuaki Hamada , Takeshi Kijima
发明人： Yasuaki Hamada , Takeshi Kijima
IPC分类号： H01L29/788
CPC分类号： H01L27/11507 , G11C11/22 , H01L27/11502 , H01L28/56 , H01L28/65 , H01L41/0805 , H01L41/1876 , H01L41/318
摘要： A capacitor includes a lower electrode, a first dielectric film composed of lead zirconate titanate niobate formed above the lower electrode, a second dielectric film composed of lead zirconate titanate or lead zirconate titanate niobate with a Nb composition smaller than a Nb composition of the lead zirconate titanate niobate composing the first dielectric film, and an upper electrode formed above the second dielectric film.
摘要翻译：电容器包括下电极，由下电极形成的锆钛酸铅铌酸铅构成的第一电介质膜，由锆钛酸铅或锆钛酸铅钛酸铌构成的第二电介质膜，Nb组成小于锆酸铅构成第一电介质膜的钛酸铌酸酯和形成在第二电介质膜上方的上电极。

9. 发明授权

US07187025B2 Ferroelectric material, ferroelectric film and method of manufacturing the same, ferroelectric capacitor and method of manufacturing the same, ferroelectric memory, and piezoelectric device 有权
标题翻译：铁电材料，铁电体膜及其制造方法，铁电电容器及其制造方法，铁电存储器及压电元件
公开(公告)号：US07187025B2
公开(公告)日：2007-03-06
申请号：US10807357
申请日：2004-03-24
申请人： Yasuaki Hamada , Takeshi Kijima , Junichi Karasawa , Koji Ohashi , Eiji Natori
发明人： Yasuaki Hamada , Takeshi Kijima , Junichi Karasawa , Koji Ohashi , Eiji Natori
IPC分类号： H01L29/76
CPC分类号： H01L21/02197 , G11C11/22 , H01L21/02356 , H01L21/31691 , H01L27/11502 , H01L41/1876 , H01L41/318
摘要： A ferroelectric material for forming a ferroelectric that is described by a general formula ABO3, includes an A-site compensation component which compensates for a vacancy of an A site, and a B-site compensation component which compensates for a vacancy of a B site.
摘要翻译：用于形成由通式ABO 3 3描述的铁电体的铁电材料包括补偿A位置的空位的A位点补偿部件和补偿A位置的B位点补偿部件一个B网站的空缺。

10. 发明申请

US20060140031A1 Ferroelectric film and method of manufacturing the same 审中-公开
标题翻译：铁电薄膜及其制造方法
公开(公告)号：US20060140031A1
公开(公告)日：2006-06-29
申请号：US11316172
申请日：2005-12-22
申请人： Takeshi Kijima , Yasuaki Hamada , Tomokazu Kobayashi
发明人： Takeshi Kijima , Yasuaki Hamada , Tomokazu Kobayashi
IPC分类号： G11C7/00
CPC分类号： H01L21/02197 , C04B35/495 , C04B35/624 , C04B35/6264 , C04B35/64 , C04B2235/3251 , C04B2235/3255 , C04B2235/3287 , C04B2235/3298 , C04B2235/3418 , C04B2235/441 , C04B2235/449 , C04B2235/662 , C04B2235/768 , H01L21/02205 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L27/11507
摘要： A method of manufacturing a ferroelectric film including: (a) mixing a polycarboxylate containing niobium, a polycarboxylate containing bismuth, a polycarboxylic acid or a polycarboxylic acid ester, and an organic solvent; and (b) applying the resulting mixed solution to a substrate and heat-treating the applied mixed solution to form a ferroelectric film including BiNbO4.
摘要翻译：一种制造铁电体膜的方法，包括：（a）将含有铌的聚羧酸酯，含有铋的多元羧酸酯，多元羧酸或多元羧酸酯与有机溶剂混合; 和（b）将所得到的混合溶液涂布在基板上，对所施加的混合溶液进行热处理，形成包含BiNbO 4的铁电体膜。

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