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    • 5. 发明申请
    • Substrate processing apparatus
    • 基板加工装置
    • US20090139656A1
    • 2009-06-04
    • US12292947
    • 2008-12-01
    • Koukichi HiroshiroHideyuki YamamotoKazuhiro TakeshitaTakayuki Toshima
    • Koukichi HiroshiroHideyuki YamamotoKazuhiro TakeshitaTakayuki Toshima
    • H01L21/306
    • H01L21/67057
    • The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow. The discharge guide portion is inclined upward, opposite to the central portion in the width direction. The projecting portion includes an inner end portion located nearer to the central portion in the width direction, as compared with the main body and discharge guide portion.
    • 本发明提供一种基板处理装置,用于通过将基板浸入处理液中来处理基板。 该基板处理装置具备:处理槽,具有配置成彼此相对的一对侧壁; 以及分别对应于一对侧壁设置的一对处理液供给机构。 一对处理液供给机构分别构成为将处理液朝向连接该一对侧壁的宽度方向的处理槽的中央部供给,从而在处理液的中央区域产生上升的流动 处理槽的宽度方向。 一对侧壁的每个内壁面包括主体,位于主体上方的突出部分和位于最上方的排出引导部分,并且设置用于允许处理液体溢出的排出口。 排出引导部分在宽度方向上与中心部分相反地向上倾斜。 与主体和排出引导部相比,突出部包括位于宽度方向上更接近中央部的内端部。
    • 8. 发明授权
    • Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus
    • 蚀刻装置,自偏压测定方法以及蚀刻装置的监视方法
    • US07330346B2
    • 2008-02-12
    • US11506791
    • 2006-08-21
    • Shoji IkuharaHideyuki YamamotoDaisuke ShiraishiAkira Kagoshima
    • Shoji IkuharaHideyuki YamamotoDaisuke ShiraishiAkira Kagoshima
    • H02N13/00
    • H01L21/6833H02N13/00
    • The invention provides a means for estimating a self-bias voltage under arbitrary etching conditions via a simple procedure. The present invention provides a method for measuring self-bias voltage of an etching apparatus comprising an electrostatic chuck mechanism 1 and 10 for chucking a sample 2, a mechanism 13 and 14 for supplying cooling gas 12 to a rear surface of the sample 2 and controlling the pressure thereof, and a means for measuring the relative force of electrostatic chuck of the sample based on the rear surface pressure control status of the sample 2 being processed, wherein the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control of the sample 2 when high-frequency bias power is applied to the sample 2 being processed, and the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control status of the sample when high-frequency bias power is not applied to the sample being processed, and the self-bias voltage is estimated using the acquired forces of electrostatic chuck and the electrostatic chuck voltages corresponding to the two statuses.
    • 本发明提供了一种用于通过简单的过程在任意蚀刻条件下估计自偏压的装置。 本发明提供了一种用于测量蚀刻装置的自偏压的方法,该蚀刻装置包括用于夹持样品2的静电卡盘机构1和10,用于将冷却气体12供应到样品2的后表面的机构13和14,并且控制 其压力,以及用于根据正在处理的样品2的背面压力控制状态来测量样品的静电卡盘的相对力的装置,其中样品的静电卡盘的相对力和对应于 当对待处理的样品2施加高频偏置功率时,基于样品2的背面压力控制获取静电卡盘的力,并且将样品的静电卡盘与静电卡盘电压的相对力对应于 当高频时,基于样品的背面压力控制状态获取静电卡盘的力 cy偏压功率不会被施加到正在处理的样品,并且使用所获取的静电卡盘的力和对应于两种状态的静电卡盘电压来估计自偏压。