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    • 4. 发明授权
    • Semiconductor device and method for producing same
    • 半导体装置及其制造方法
    • US08685803B2
    • 2014-04-01
    • US13514081
    • 2010-12-03
    • Yoshimasa ChikamaHirohiko NishikiYoshifumi OhtaTakeshi HaraTetsuya AitaMasahiko SuzukiMichiko TakeiOkifumi NakagawaYoshiyuki HarumotoHinae Mizuno
    • Yoshimasa ChikamaHirohiko NishikiYoshifumi OhtaYuuji MizunoTakeshi HaraTetsuya AitaMasahiko SuzukiMichiko TakeiOkifumi NakagawaYoshiyuki Harumoto
    • H01L21/00
    • H01L27/1225G02F1/13458G02F1/136213H01L27/124H01L27/1244H01L27/1248
    • A semiconductor device includes: a thin film transistor having a gate line (3a), a first insulating film (5), an island-shaped oxide semiconductor layer (7a), a second insulating film (9), a source line (13as), a drain electrode (13ad), and a passivation film; and a terminal portion having a first connecting portion (3c) made of the same conductive film as the gate line, a second connecting portion (13c) made of the same conductive film as the source line and the drain electrode, and a third connecting portion (19c) formed on the second connecting portion. The second connecting portion is in contact with the first connecting portion within a first opening (11c) provided in the first and second insulating films; the third connecting portion (19c) is in contact with the second connecting portion within a second opening (17c) provided in the passivation film; and the second connecting portion (13c) covers end faces of the first and second insulating films within the first opening (11c), but does not cover an end face of the passivation film (15) within the second opening (17c). As a result, the taper shape of a contact hole of the terminal portion can be controlled with a high precision.
    • 半导体器件包括:具有栅极线(3a),第一绝缘膜(5),岛状氧化物半导体层(7a),第二绝缘膜(9),源极线(13as))的薄膜晶体管, ,漏电极(13ad)和钝化膜; 以及具有由与栅极线相同的导电膜制成的第一连接部分(3c)的端子部分,由与源极线和漏极电极相同的导电膜制成的第二连接部分(13c)和第三连接部分 (19c)形成在第二连接部分上。 第二连接部分在设置在第一和第二绝缘膜中的第一开口(11c)内与第一连接部分接触; 所述第三连接部分(19c)在设置在所述钝化膜中的第二开口(17c)内与所述第二连接部分接触; 并且所述第二连接部分(13c)覆盖所述第一开口(11c)内的所述第一绝缘膜和所述第二绝缘膜的端面,但不覆盖所述第二开口(17c)内的所述钝化膜(15)的端面。 结果,可以高精度地控制端子部分的接触孔的锥形形状。