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    • 6. 发明授权
    • Method of correcting error of flash memory device, and, flash memory device and storage system using the same
    • 闪存装置的误差校正方法以及使用其的闪存装置及存储系统
    • US08612830B2
    • 2013-12-17
    • US12026738
    • 2008-02-06
    • Jun KitaharaNagamasa Mizushima
    • Jun KitaharaNagamasa Mizushima
    • G11C29/00
    • G06F11/1068G11C16/3418
    • According to this invention, a highly reliable memory device that uses up a life of a flash memory can be provided. The memory device is a nonvolatile memory device including a plurality of memory cells, in which: each of the plurality of memory cells is an FET which includes a floating gate; the plurality of memory cells are divided into a plurality of deletion blocks; and the nonvolatile memory device reads data stored in a first deletion block, detects and corrects an error contained in the read data, stores, when the number of bits of the detected error exceeds a threshold, the corrected data in a second deletion block, sets a smaller value as the threshold as an error frequency detected in the first deletion block is higher, and sets a smaller value as the threshold as the number of deletion times executed in the first deletion block is larger.
    • 根据本发明,可以提供使用快闪存储器寿命的高度可靠的存储器件。 存储器件是包括多个存储单元的非易失性存储器件,其中:多个存储器单元中的每一个都是包括浮置栅极的FET; 多个存储单元被分成多个删除块; 并且非易失性存储器件读取存储在第一删除块中的数据,检测并校正读取数据中包含的错误,当检测到的错误的位数超过阈值时,存储第二删除块中的校正数据 作为在第一删除块中检测到的错误频率的阈值的较小值较高,并且随着在第一删除块中执行的删除次数的数量较大,将较小的值设置为阈值。
    • 7. 发明申请
    • SEMICONDUCTOR MEMORY SYSTEM FOR FLASH MEMORY
    • 闪存存储器半导体存储器系统
    • US20080126678A1
    • 2008-05-29
    • US11616932
    • 2006-12-28
    • Nagamasa Mizushima
    • Nagamasa Mizushima
    • G06F12/02
    • G11C16/349G06F11/1068G11C5/04G11C16/04G11C16/3495G11C29/4401G11C29/46G11C29/76G11C2029/0409G11C2029/0411
    • Provided is a semiconductor memory system including a plurality of main memory chips and sub-memory chips as alternatives, in which each main memory chip includes a plurality of reserved memory blocks in the same chip as alternatives to an abnormal memory block. When it is detected that the number of the remaining reserved memory blocks unused as blocks to be reassigned has reached a first predetermined value in the main memory chip, the memory blocks in the sub-memory chip starts to be formatted. When the number of the remaining reserved memory blocks unused in the main memory chip reaches a second predetermined value, read/write with respect to the main memory chip is switched to the sub-memory chip, while bypassing the format process for the memory block in the sub-memory chip. Thus, in the semiconductor memory system including a main flash memory, an alternative flash memory, and a write cache memory, the capacity of a RAM for the write cache memory can be reduced.
    • 提供了一种半导体存储器系统,其包括作为替代的多个主存储器芯片和子存储器芯片,其中每个主存储器芯片包括与替代异常存储器块相同的芯片中的多个保留​​存储器块。 当检测到未被使用的剩余保留存储器块的数量将被重新分配的块已经达到主存储器芯片中的第一预定值时,子存储器芯片中的存储块开始被格式化。 当在主存储器芯片中未使用的剩余保留存储器块的数量达到第二预定值时,相对于主存储器芯片的读/写切换到子存储器芯片,同时绕过存储块的格式化处理 子存储芯片。 因此,在包括主闪速存储器,备用闪存和写入高速缓冲存储器的半导体存储器系统中,可以减少写入高速缓冲存储器的RAM的容量。
    • 8. 发明授权
    • Semiconductor memory system having a snapshot function
    • 具有快照功能的半导体存储器系统
    • US08417896B2
    • 2013-04-09
    • US13422644
    • 2012-03-16
    • Nagamasa Mizushima
    • Nagamasa Mizushima
    • G06F11/00G06F12/00G11C16/02
    • G06F12/0246G06F11/1415G06F11/1471G06F12/1009G06F2201/84
    • In a semiconductor memory computer equipped with a flash memory, use of backed-up data is enabled. The semiconductor memory computer includes an address conversion table for detecting physical addresses of at least two pages storing data by designating a logical address from one of logical addresses to be designated by a reading request. The semiconductor memory computer includes a page status register for detecting one page status allocated to each page, and page statuses to be detected include the at least following four statuses: (1) a latest data storage status, (2) a not latest data storage status, (3) an invalid data storage status, and (4) an unwritten status. By using the address conversion table and the page status register, at least two data (latest data and past data) can be read for one designated logical address from a host computer.
    • 在配有闪存的半导体存储器中,使用备份数据。 半导体存储器计算机包括地址转换表,用于通过从由读取请求指定的逻辑地址之一指定逻辑地址来检测存储数据的至少两个页面的物理地址。 半导体存储器计算机包括用于检测分配给每个页面的一页状态的页面状态寄存器,并且要检测的页面状态包括至少以下四个状态:(1)最新数据存储状态,(2)不是最新的数据存储 状态,(3)无效数据存储状态,以及(4)不成文状态。 通过使用地址转换表和页面状态寄存器,可以从主机为一个指定的逻辑地址读取至少两个数据(最新数据和过去数据)。