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1. 发明授权

US07838888B2 Silcon carbide semiconductor device having schottky barrier diode and method for manufacturing the same 有权
标题翻译：具有肖特基势垒二极管的硅碳化物半导体器件及其制造方法
公开(公告)号：US07838888B2
公开(公告)日：2010-11-23
申请号：US12076874
申请日：2008-03-25
申请人： Takeo Yamamoto , Naohiro Suzuki , Eiichi Okuno
发明人： Takeo Yamamoto , Naohiro Suzuki , Eiichi Okuno
IPC分类号： H01L29/24 , H01L21/329
CPC分类号： H01L29/872 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/1608 , H01L29/6606 , H01L29/861
摘要： An SiC semiconductor device is provided, which comprises: a substrate made of silicon carbide and having a principal surface; a drift layer made of silicon carbide and disposed on the principal surface; an insulating layer disposed on the drift layer and including an opening; a Schottky electrode contacting with the drift layer through the opening; a termination structure disposed around an outer periphery of the opening; and second conductivity type layers disposed in a surface part of the drift layer, contacting the Schottky electrode, surrounded by the termination structure, and separated from one another. The second conductivity type layers include a center member and ring members. Each ring member surrounds the center member and is arranged substantially in a point symmetric manner with respect to the center member.
摘要翻译：提供了一种SiC半导体器件，其包括：由碳化硅制成并具有主表面的衬底; 由碳化硅制成的漂移层，设置在主表面上; 绝缘层，设置在所述漂移层上并包括开口; 肖特基电极通过开口与漂移层接触; 设置在所述开口的外周周围的端接结构; 以及设置在漂移层的表面部分中的第二导电类型层，与由端接结构包围的肖特基电极接触并彼此分离。第二导电类型层包括中心构件和环构件。每个环构件围绕中心构件并且基本上相对于中心构件以点对称的方式布置。

2. 发明授权

US07825017B2 Method of making silicon carbide semiconductor device having multi-layered passivation film with uneven surfaces 有权
标题翻译：制造具有不平坦表面的多层钝化膜的碳化硅半导体器件的方法
公开(公告)号：US07825017B2
公开(公告)日：2010-11-02
申请号：US12406578
申请日：2009-03-18
申请人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Masaki Konishi
发明人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Masaki Konishi
IPC分类号： H01L21/28 , H01L21/283 , H01L21/44 , H01L21/441 , H01L31/0312 , H01L29/47
CPC分类号： H01L29/872 , H01L21/0495 , H01L29/0611 , H01L29/063 , H01L29/1608 , H01L29/6606 , H01L29/7395 , H01L29/8083 , H01L2224/02166 , H01L2224/04042 , H01L2224/05552 , H01L2224/05567 , H01L2924/0002 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要： A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.
摘要翻译：设置为半导体芯片的碳化硅半导体器件包括衬底，衬底上的漂移层，漂移层上的绝缘膜，形成在漂移层的单元区域中的半导体元件，形成在漂移层上的表面电极并且通过所述绝缘膜的开口电耦合到所述半导体元件，以及钝化膜，所述钝化膜形成在所述电池区周围的漂移层上方以覆盖所述表面电极的外边缘。钝化膜具有开口，表面电极通过该开口暴露在外部。钝化膜的表面被制成不均匀以增加从钝化膜的开口的内边缘到沿着钝化膜的表面测量的芯片边缘的长度。

3. 发明申请

US20080277669A1 SiC semiconductor having junction barrier Schottky device 有权
标题翻译：具有接合屏障肖特基装置的SiC半导体
公开(公告)号：US20080277669A1
公开(公告)日：2008-11-13
申请号：US12078370
申请日：2008-03-31
申请人： Eiichi Okuno , Takeo Yamamoto
发明人： Eiichi Okuno , Takeo Yamamoto
IPC分类号： H01L29/24
CPC分类号： H01L29/872 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0692 , H01L29/1608 , H01L29/6606 , H01L29/861
摘要： A semiconductor device having a JBS diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening and an ohmic electrode on the substrate; a terminal structure having a RESURF layer in the drift layer surrounding the cell region; and multiple second conductive type layers in the drift layer on an inner side of the RESURF layer contacting the Schottky electrode. The second conductive type layers are separated from each other. The second conductive type layers and the drift layer provide a PN diode. Each second conductive type layer has a depth larger than the RESURF layer.
摘要翻译：具有JBS二极管的半导体器件包括：SiC衬底; 衬底上的漂移层; 漂移层上的绝缘膜在电池区域具有开口; 具有肖特基电极的肖特基势垒二极管，其通过开口接触漂移层，并在衬底上接触欧姆电极; 具有围绕所述单元区域的所述漂移层中的RESURF层的端子结构; 以及在与肖特基电极接触的RESURF层的内侧上的漂移层中的多个第二导电类型层。第二导电类型的层彼此分离。第二导电类型层和漂移层提供PN二极管。每个第二导电类型层的深度大于RESURF层。

4. 发明授权

US08324704B2 Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same 有权
标题翻译：具有肖特基势垒二极管的碳化硅半导体器件及其制造方法
公开(公告)号：US08324704B2
公开(公告)日：2012-12-04
申请号：US12659853
申请日：2010-03-23
申请人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Hirokazu Fujiwara , Masaki Konishi , Takashi Katsuno , Yukihiko Watanabe
发明人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Hirokazu Fujiwara , Masaki Konishi , Takashi Katsuno , Yukihiko Watanabe
IPC分类号： H01L29/24 , H01L29/47 , H01L21/04
CPC分类号： H01L29/47 , H01L21/0465 , H01L21/0495 , H01L29/0615 , H01L29/0619 , H01L29/1608 , H01L29/6606 , H01L29/66143 , H01L29/872
摘要： A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements.
摘要翻译：具有肖特基势垒二极管的碳化硅半导体器件包括第一导电型碳化硅衬底，在衬底的第一表面上的第一导电型碳化硅漂移层，与漂移层形成肖特基接触的肖特基电极和欧姆电极在基板的第二表面上。肖特基电极包括与漂移层直接接触的氧化物层。氧化物层由钼，钛，镍或这些元素中的至少两种的合金的氧化物制成。

5. 发明申请

US20090267082A1 Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20090267082A1
公开(公告)日：2009-10-29
申请号：US12385594
申请日：2009-04-14
申请人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Masaki Konishi , Hirokazu Fujiwara
发明人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Masaki Konishi , Hirokazu Fujiwara
IPC分类号： H01L29/872 , H01L29/24 , H01L21/329
CPC分类号： H01L29/861 , H01L21/0495 , H01L29/0657 , H01L29/1608 , H01L29/6606 , H01L29/7395 , H01L29/872
摘要： A semiconductor device includes: a semiconductor element having a first surface and a second surface; a first electrode disposed on the first surface of the element; a second electrode disposed on the second surface of the element; and an insulation film covers a part of the first electrode, the first surface of the element and a part of a sidewall of the element. The above semiconductor device has small dimensions and a high breakdown voltage.
摘要翻译：半导体器件包括：具有第一表面和第二表面的半导体元件; 设置在所述元件的第一表面上的第一电极; 设置在所述元件的第二表面上的第二电极; 并且绝缘膜覆盖第一电极的一部分，元件的第一表面和元件的侧壁的一部分。上述半导体器件具有小的尺寸和高的击穿电压。

6. 发明申请

US20090008651A1 Silicon carbide semiconductor device having junction barrier schottky diode 有权
标题翻译：具有结屏障肖特基二极管的碳化硅半导体器件
公开(公告)号：US20090008651A1
公开(公告)日：2009-01-08
申请号：US12216182
申请日：2008-07-01
申请人： Eiichi Okuno , Takeo Yamamoto
发明人： Eiichi Okuno , Takeo Yamamoto
IPC分类号： H01L29/24
CPC分类号： H01L29/872 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/1608 , H01L29/6606 , H01L29/861
摘要： A silicon carbide semiconductor device includes a drift layer having first conductive type on a substrate, a cell region in the drift layer, a schottky electrode on the drift layer and multiple second conductive type layers in the cell region. The second conductive type layers are separated from each other and contact the schottky electrode. A size and an impurity concentration of the second conductive type layers and a size and an impurity concentration of a portion of the drift layer sandwiched between the second conductive type layers are determined so that a charge quantity of the second conductive type layers is equal to a charge quantity of the portion. Hereby, the pressure-proof JBS and low resistivity second conductive type layers arranged on a surface of the drift layer to provide a PN diode, can be obtained.
摘要翻译：碳化硅半导体器件包括在衬底上具有第一导电类型的漂移层，漂移层中的单元区域，漂移层上的肖特基电极和单元区域中的多个第二导电类型层。第二导电型层彼此分离并与肖特基电极接触。确定第二导电型层的尺寸和杂质浓度以及夹在第二导电型层之间的漂移层的一部分的尺寸和杂质浓度，使得第二导电类型层的电荷量等于电荷量的部分。因此，可以获得布置在漂移层的表面上以提供PN二极管的耐压JBS和低电阻率第二导电类型层。

7. 发明申请

US20080296587A1 Silicon carbide semiconductor device having junction barrier schottky diode 有权
标题翻译：具有结屏障肖特基二极管的碳化硅半导体器件
公开(公告)号：US20080296587A1
公开(公告)日：2008-12-04
申请号：US12153825
申请日：2008-05-27
申请人： Takeo Yamamoto , Eiichi Okuno
发明人： Takeo Yamamoto , Eiichi Okuno
IPC分类号： H01L29/15 , H01L29/24
CPC分类号： H01L29/872 , H01L29/0619 , H01L29/063 , H01L29/0692 , H01L29/1608
摘要： A silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type; an insulating layer; a Schottky electrode; an ohmic electrode; a resurf layer; and second conductivity type layers. The drift layer and the second conductivity type layers provide multiple PN diodes. Each second conductivity type layer has a radial width with respect to a center of a contact region between the Schottky electrode and the drift layer. A radial width of one of the second conductivity type layers is smaller than that of another one of the second conductivity type layers, which is disposed closer to the center of the contact region than the one of the second conductivity type layers.
摘要翻译：碳化硅半导体器件包括衬底; 具有第一导电类型的漂移层; 绝缘层; 肖特基电极欧姆电极; 一个复活层; 和第二导电类型层。漂移层和第二导电类型层提供多个PN二极管。每个第二导电类型层相对于肖特基电极和漂移层之间的接触区域的中心具有径向宽度。所述第二导电型层之一的径向宽度小于所述第二导电类型层中的另一导电类型层的径向宽度，所述第二导电类型层被设置为比所述第二导电类型层中的所述第二导电类型层更靠近所述接触区域的中心。

8. 发明授权

US07855131B2 Manufacturing method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07855131B2
公开(公告)日：2010-12-21
申请号：US12385782
申请日：2009-04-20
申请人： Hirokazu Fujiwara , Masaki Konishi , Takeo Yamamoto , Eiichi Okuno , Yukihiko Watanbe , Takashi Katsuno
发明人： Hirokazu Fujiwara , Masaki Konishi , Takeo Yamamoto , Eiichi Okuno , Yukihiko Watanbe , Takashi Katsuno
IPC分类号： H01L21/322
CPC分类号： H01L29/47 , H01L21/046 , H01L29/1608 , H01L29/66143 , H01L29/872
摘要： A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.
摘要翻译：半导体器件的制造方法包括在碳化硅衬底中掺杂导电杂质的工艺，在碳化硅衬底的表面上形成覆盖层的工艺，激活掺杂在碳化硅衬底中的导电杂质的工艺，在第一退火工艺之后氧化盖层的工艺，以及去除氧化的盖层的工艺。优选的是，盖层由包括金属碳化物的材料形成。由于金属碳化物的氧化开始温度相对较低，如果在盖层中包括金属碳化物，则盖层的氧化变得容易。具体而言，优选盖层由氧化开始温度为1000℃以下的金属碳化物形成，例如碳化钽。

9. 发明授权

US07851882B2 Silicon carbide semiconductor device having junction barrier schottky diode 有权
标题翻译：具有结屏障肖特基二极管的碳化硅半导体器件
公开(公告)号：US07851882B2
公开(公告)日：2010-12-14
申请号：US12216182
申请日：2008-07-01
申请人： Eiichi Okuno , Takeo Yamamoto
发明人： Eiichi Okuno , Takeo Yamamoto
IPC分类号： H01L29/47
CPC分类号： H01L29/872 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/1608 , H01L29/6606 , H01L29/861
摘要： A silicon carbide semiconductor device includes a drift layer having first conductive type on a substrate, a cell region in the drift layer, a schottky electrode on the drift layer and multiple second conductive type layers in the cell region. The second conductive type layers are separated from each other and contact the schottky electrode. A size and an impurity concentration of the second conductive type layers and a size and an impurity concentration of a portion of the drift layer sandwiched between the second conductive type layers are determined so that a charge quantity of the second conductive type layers is equal to a charge quantity of the portion. Hereby, the pressure-proof JBS and low resistivity second conductive type layers arranged on a surface of the drift layer to provide a PN diode, can be obtained.
摘要翻译：碳化硅半导体器件包括在衬底上具有第一导电类型的漂移层，漂移层中的单元区域，漂移层上的肖特基电极和单元区域中的多个第二导电类型层。第二导电型层彼此分离并与肖特基电极接触。确定第二导电型层的尺寸和杂质浓度以及夹在第二导电型层之间的漂移层的一部分的尺寸和杂质浓度，使得第二导电类型层的电荷量等于电荷量的部分。因此，可以获得布置在漂移层的表面上以提供PN二极管的耐压JBS和低电阻率第二导电类型层。

10. 发明授权

US08168485B2 Semiconductor device making method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08168485B2
公开(公告)日：2012-05-01
申请号：US12461205
申请日：2009-08-04
申请人： Takeshi Endo , Eiichi Okuno , Takeo Yamamoto , Hirokazu Fujiwara , Masaki Konishi , Yukihiko Watanabe , Takashi Katsuno
发明人： Takeshi Endo , Eiichi Okuno , Takeo Yamamoto , Hirokazu Fujiwara , Masaki Konishi , Yukihiko Watanabe , Takashi Katsuno
IPC分类号： H01L29/812 , H01L21/338
CPC分类号： H01L29/872 , H01L29/456 , H01L29/47 , H01L29/66136 , H01L29/66143 , H01L29/861
摘要： A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.
摘要翻译：制造半导体器件的方法包括：以p型半导体区域部分地暴露于半导体衬底的顶表面，形成p型半导体区域到n型半导体衬底，形成肖特基电极以使肖特基电极与暴露于半导体衬底的顶表面的n型半导体区域肖特基接触的方式形成第一材料，并且以这种方式形成不同于第一材料的第二材料的欧姆电极欧姆电极与暴露的p型半导体区域欧姆接触。肖特基电极比欧姆电极早。

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