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1. 发明授权

US06626719B2 Method of manufacturing electron-emitting device as well as electron source and image-forming apparatus 失效
标题翻译：制造电子发射器件的方法以及电子源和图像形成装置
公开(公告)号：US06626719B2
公开(公告)日：2003-09-30
申请号：US08781206
申请日：1997-01-10
申请人： Takeo Ono , Hisaaki Kawade , Yoshinobu Sekiguchi , Yasuhiro Hamamoto , Keisuke Yamamoto , Takeo Tsukamoto , Masato Yamanobe
发明人： Takeo Ono , Hisaaki Kawade , Yoshinobu Sekiguchi , Yasuhiro Hamamoto , Keisuke Yamamoto , Takeo Tsukamoto , Masato Yamanobe
IPC分类号： H01J902
CPC分类号： H01J1/316 , H01J9/027
摘要： An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film inclusive of an electron-emitting region arranged between the electrodes. The electric resistance of the electroconductive film is reduced after forming the electron-emitting region in the course of manufacturing the electron-emitting device.
摘要翻译：电子发射器件包括一对相对设置的电极和导电膜，包括布置在电极之间的电子发射区域。在制造电子发射器件的过程中形成电子发射区之后，导电膜的电阻降低。

2. 发明授权

US5674100A Method of manufacturing electron-emitting device 失效
标题翻译：制造电子发射器件的方法
公开(公告)号：US5674100A
公开(公告)日：1997-10-07
申请号：US281518
申请日：1994-07-28
申请人： Takeo Ono , Hisaaki Kawade , Yoshinobu Sekiguchi , Yasuhiro Hamamoto , Keisuke Yamamoto , Takeo Tsukamoto , Masato Yamanobe
发明人： Takeo Ono , Hisaaki Kawade , Yoshinobu Sekiguchi , Yasuhiro Hamamoto , Keisuke Yamamoto , Takeo Tsukamoto , Masato Yamanobe
IPC分类号： H01J1/316 , H01J9/02 , H01J1/30
CPC分类号： H01J1/316 , H01J9/027
摘要： An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film inclusive of an electron-emitting region arranged between the electrodes. The electric resistance of the electroconductive film is reduced after forming the electron-emitting region in the course of manufacturing the electron-emitting device.
摘要翻译：电子发射器件包括一对相对设置的电极和导电膜，包括布置在电极之间的电子发射区域。在制造电子发射器件的过程中形成电子发射区之后，导电膜的电阻降低。

3. 发明授权

US08259145B2 Image forming apparatus with scanning position corrected by non-imaging laser beam 有权
标题翻译：具有通过非成像激光束校正的扫描位置的图像形成装置
公开(公告)号：US08259145B2
公开(公告)日：2012-09-04
申请号：US12785385
申请日：2010-05-21
申请人： Noriyuki Chino , Yuji Uramoto , Shoji Kanemura , Kota Kiyama , Junji Yasuda , Katsuhiko Takano , Yoshinobu Sekiguchi , Noboru Koumura
发明人： Noriyuki Chino , Yuji Uramoto , Shoji Kanemura , Kota Kiyama , Junji Yasuda , Katsuhiko Takano , Yoshinobu Sekiguchi , Noboru Koumura
IPC分类号： B41J2/47 , B41J2/435
CPC分类号： B41J2/473 , G02B26/127 , G06K15/1219
摘要： An image forming apparatus capable of enhancing the accuracy of the scanning position of a laser beam to thereby obtain a more precise image. Optical sensors detect reflected light from a surface of a photosensitive drum. During image formation, the apparatus detects the scanning speed of the laser beam in a main scanning direction based on detection signals from the respective optical sensors in each of divisional sections of an image forming area in the main scanning direction. The apparatus corrects magnification of the image in the main scanning direction, based on results of detection of the scanning speed of the laser beam in the main scanning direction.
摘要翻译：一种图像形成装置，其能够提高激光束的扫描位置的精度，从而获得更精确的图像。光学传感器检测来自感光鼓表面的反射光。在图像形成期间，该装置基于来自主扫描方向上的图像形成区域的每个分割部分中的各个光学传感器的检测信号，在主扫描方向上检测激光束的扫描速度。该装置基于在主扫描方向上的激光束的扫描速度的检测结果来校正图像在主扫描方向上的放大率。

4. 发明授权

US07550305B2 Method of forming light-emitting element 失效
标题翻译：形成发光元件的方法
公开(公告)号：US07550305B2
公开(公告)日：2009-06-23
申请号：US11874452
申请日：2007-10-18
申请人： Kenji Yamagata , Takao Yonehara , Yoshinobu Sekiguchi , Kojiro Nishi
发明人： Kenji Yamagata , Takao Yonehara , Yoshinobu Sekiguchi , Kojiro Nishi
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： H01L33/0079 , H01L33/08 , H01L33/20
摘要： An object of the present invention is to provide a method of forming a light-emitting element at a lower cost than a conventional cost with suppressing the deterioration of the substrate due to thermal distortion in comparison with a conventional method of recycling a substrate and further having an effect equal to that of the method of recycling a substrate. The method of forming a light-emitting element by growing a separation layer and a light-emitting layer in this order on a first substrate, bonding the light-emitting layer onto a second substrate, and removing the separation layer to form the light-emitting layer on the second substrate, includes growing a plurality of groups each containing the separation layer and light-emitting layer on the first substrate; patterning the light-emitting layer existing as a uppermost layer into an island shape, and then bonding the light-emitting layer onto the second substrate, and etching the separation layer adjacent to the light-emitting layer patterned into the island shape to form the light-emitting layer patterned into the island shape on the second substrate.
摘要翻译：本发明的目的是提供一种以比常规成本低的成本形成发光元件的方法，与常规的基板再循环方法相比，可以抑制由于热变形引起的基板的劣化，并且还具有其效果与回收基材的方法相同。通过在第一基板上依次生长分离层和发光层来形成发光元件的方法，将发光层接合到第二基板上，并且去除分离层以形成发光包括在第一基板上生长各自包含分离层和发光层的多个基团; 将作为最上层存在的发光层图案化为岛状，然后将发光层接合到第二基板上，并且蚀刻与图案化为岛状的发光层相邻的分离层，以形成光在第二基板上图案化成岛状的发光层。

5. 发明申请

US20090003401A1 SURFACE EMITTING LASER AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：表面发射激光及其制造方法
公开(公告)号：US20090003401A1
公开(公告)日：2009-01-01
申请号：US12143337
申请日：2008-06-20
申请人： Yoshinobu Sekiguchi
发明人： Yoshinobu Sekiguchi
IPC分类号： H01S5/00 , H01L21/02
CPC分类号： H01S5/18394 , H01S5/0215 , H01S5/0216 , H01S5/0425 , H01S5/18311 , H01S2301/166
摘要： Provided is a surface emitting laser which can maintain a fundamental transverse mode to obtain higher power while higher-order transverse mode oscillations are suppressed, and a method of manufacturing the surface emitting laser. The surface emitting laser includes: an aperture portion to be a path for injecting a current to an active layer; a current confinement region provided in the vicinity of the aperture portion; and a current injection region which is provided on an opposite side to a light output side with respect to the active layer therebetween, in which a current injection path in the current injection region has a smaller diameter than the aperture portion.
摘要翻译：本发明提供一种表面发射激光器，其可以保持基本横模以获得更高功率，同时抑制高阶横模振荡，以及制造表面发射激光器的方法。表面发射激光器包括：作为将电流注入有源层的路径的开口部分; 设置在所述开口部附近的电流限制区域; 以及电流注入区域，其设置在相对于其间的有源层的与光输出侧相反的一侧，其中当前注入区域中的电流注入路径具有比孔部分更小的直径。

6. 发明授权

US07420839B2 Magnetization reversal method for applying a multi-directional external magnetic field to a perpendicular magnetoresistive film 有权
标题翻译：用于将多方向外部磁场施加到垂直磁阻膜的磁化反转方法
公开(公告)号：US07420839B2
公开(公告)日：2008-09-02
申请号：US11410705
申请日：2006-04-24
申请人： Takashi Ikeda , Yoshinobu Sekiguchi , Naoki Nishimura
发明人： Takashi Ikeda , Yoshinobu Sekiguchi , Naoki Nishimura
IPC分类号： G11C11/15
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3281 , H01F10/3286
摘要： A magnetization reversal method is disclosed in which an external magnetic field is applied to a magnetoresistive film requiring a strong magnetic film for reversal. A weak magnetic field is applied when magnetically coupled perpendicular magnetic films are used in which the magnetoresistive film has a structure wherein a nonmagnetic film is placed between magnetic films with an easy axis of magnetization along a perpendicular direction to a film plane, and in which said external magnetic field is comprised of magnetic fields from a plurality of directions including a direction of easy magnetization of the magnetic films.
摘要翻译：公开了一种磁化反转方法，其中外部磁场被施加到需要强磁性膜反转的磁阻膜上。当使用磁耦合垂直磁性膜时，施加弱磁场，其中磁阻膜具有这样一种结构，其中非磁性膜沿着与薄膜平面垂直的方向具有容易的磁化轴的磁性膜之间，其中所述外部磁场由包括磁性膜容易磁化的方向的多个方向的磁场构成。

7. 发明授权

US07399693B2 Semiconductor film manufacturing method and substrate manufacturing method 有权
标题翻译：半导体薄膜的制造方法和基板的制造方法
公开(公告)号：US07399693B2
公开(公告)日：2008-07-15
申请号：US10566170
申请日：2005-06-15
申请人： Yoshinobu Sekiguchi , Takao Yonehara , Makoto Koto , Masahiro Okuda , Tetsuya Shimada
发明人： Yoshinobu Sekiguchi , Takao Yonehara , Makoto Koto , Masahiro Okuda , Tetsuya Shimada
IPC分类号： H01L21/44
CPC分类号： H01L21/76251 , H01L21/0237 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02455 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02538 , H01L21/02546 , H01L21/02573 , H01L21/0262 , H01L33/0079 , H01S5/0213 , H01S5/0217 , H01S5/32341
摘要： This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming a step of hetero-epitaxially growing a separation layer (2) on a seed substrate (1), a semiconductor film forming step of forming a semiconductor film (3) on the separation layer (2), and a separation step of separating, by using the separation layer (2), the semiconductor film (3) from a composite member (Ia) formed in the semiconductor film forming step.
摘要翻译：本发明提供一种使用新的分离技术及其应用的半导体膜制造方法。本发明的半导体膜制造方法包括形成在种子基板（1）上异质生长分离层（2）的步骤的分离层，在分离时形成半导体膜（3）的半导体膜形成步骤层（2）和通过使用分离层（2）将半导体膜（3）从形成在半导体膜形成步骤中的复合构件（Ia）分离的分离步骤。

8. 发明授权

US06487110B2 Nonvolatile solid-state memory device using magnetoresistive effect and recording and reproducing method of the same 有权
标题翻译：使用磁阻效应的非易失性固态存储器件及其记录和再现方法
公开(公告)号：US06487110B2
公开(公告)日：2002-11-26
申请号：US09963519
申请日：2001-09-27
申请人： Naoki Nishimura , Yoshinobu Sekiguchi , Tadahiko Hirai
发明人： Naoki Nishimura , Yoshinobu Sekiguchi , Tadahiko Hirai
IPC分类号： G11C1115
CPC分类号： G11C11/15
摘要： The fabrication process of a conventional MRAM using a magnetoresistive effect element as a memory device is difficult, and the device structure makes it difficult to decrease the cell area and increase the degree of integration. It is an object of this invention to realize an MRAM which can achieve a high integration degree. A memory device is characterized by including a magnetoresistive element, a bit line formed above this magnetoresistive element, and a write line. The magnetoresistive element is formed immediately above the drain region of a field-effect transistor.
摘要翻译：使用磁阻效应元件作为存储器件的常规MRAM的制造过程是困难的，并且器件结构使得难以减小单元面积并增加集成度。本发明的目的是实现可以实现高集成度的MRAM。存储器件的特征在于包括磁阻元件，形成在该磁阻元件上方的位线和写入线。磁阻元件形成在场效应晶体管的漏区正上方。

9. 发明申请

US20130016170A1 LED DEVICE, LED DEVICE ARRAY, AND METHOD OF DRIVING THE LED DEVICE ARRAY 有权
标题翻译： LED装置，LED装置阵列以及驱动LED装置阵列的方法
公开(公告)号：US20130016170A1
公开(公告)日：2013-01-17
申请号：US13533869
申请日：2012-06-26
申请人： Yoshinobu Sekiguchi
发明人： Yoshinobu Sekiguchi
IPC分类号： B41J2/385 , H05B39/00 , H01L33/00
CPC分类号： H01L33/20 , B41J2/45 , H01L27/153 , H01L33/38
摘要： Provided is an LED device which is capable of reducing the emission size without changing the size of an LED and is capable of switching the emission size arbitrarily. The LED device includes, on a substrate, a carrier control layer, a lower current confinement layer, an active layer, and an upper current confinement layer. A p-type electrode is provided on the upper current confinement layer. Two n-type electrodes are arranged on the carrier control layer so as to dispose the p-type electrode between the two n-type electrodes in an in-plane direction of the substrate.
摘要翻译：提供了能够在不改变LED的尺寸的情况下减小发光尺寸并且能够任意地切换发光尺寸的LED装置。 LED器件在衬底上包括载体控制层，下电流限制层，有源层和上电流限制层。在上电流限制层上设置p型电极。在载体控制层上布置两个n型电极，以便在衬底的面内方向上将p型电极配置在两个n型电极之间。

10. 发明授权

US08228964B2 Surface emitting laser, surface emitting laser array, and image formation apparatus 有权
标题翻译：表面发射激光器，表面发射激光器阵列和成像装置
公开(公告)号：US08228964B2
公开(公告)日：2012-07-24
申请号：US12829253
申请日：2010-07-01
申请人： Yoshinobu Sekiguchi
发明人： Yoshinobu Sekiguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0655 , H01S5/2009 , H01S5/34313
摘要： To provide a surface emitting laser having a structure that can suppress the oscillation of a high-order transverse mode. In the surface emitting laser, a plurality of semiconductor layers including a lower DBR, an upper DBR, an active layer interposed therebetween, and a current confinement layer for confining a current injected to the active layer are stacked on a substrate, and a barrier structure limits the migration of a majority carrier, that has passed through a current unconfining portion, in an electric field application direction; the barrier structure is provided between the current confinement layer and the active layer so that an oscillation of a high-order transverse mode is suppressed by the barrier structure promoting the diffusion of the majority carrier in an in-plane direction of the barrier structure.
摘要翻译：提供具有可以抑制高阶横模的振荡的结构的表面发射激光器。在表面发射激光器中，将包括下DBR，上DBR，插入其间的有源层的多个半导体层和用于限制注入有源层的电流的电流限制层堆叠在基板上，并且阻挡结构限制在电场应用方向上通过当前无约束部分的多数载波的迁移; 阻挡结构设置在电流限制层和有源层之间，从而通过促进多数载流子在屏障结构的面内方向的扩散的阻挡结构来抑制高阶横模的振荡。

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