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1. 发明授权

US5330921A Method of fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5330921A
公开(公告)日：1994-07-19
申请号：US853642
申请日：1992-03-18
申请人： Takehito Yoshida , Shinichi Ogawa
发明人： Takehito Yoshida , Shinichi Ogawa
IPC分类号： H01L21/265 , H01L21/28 , H01L21/336 , H01L29/08 , H01L29/45 , H01L29/78
CPC分类号： H01L29/66575 , H01L21/2652 , H01L29/0847 , H01L29/456 , Y10T477/6237 , Y10T477/693964 , Y10T477/837 , Y10T477/865
摘要： A method of fabricating a semiconductor device wherein after forming a titanium silicide thin film on a silicon substrate, dopant impurities are implanted into the silicon substrate through the titanium silicide thin film so as to form shallow p.sup.+ -n junctions in the silicon substrate. At least one of the following conditions (1) to (3) is satisfied: (1) forty to seventy percent of the total implant dose is within the n-type silicon substrate; (2) the projected range is set at the depth corresponding to 90% to 125% of the titanium silicide film thickness; and (3) the dopant dose that comes to rest within the n-type silicon substrate is in the range of 2.0.times.10.sup.15 /cm.sup.2 to 3.5.times.10.sup.15 /cm.sup.2.
摘要翻译：一种制造半导体器件的方法，其中在硅衬底上形成硅化钛薄膜之后，通过硅化钛薄膜将掺杂剂杂质注入到硅衬底中，以在硅衬底中形成浅的p + -n结。满足以下条件（1）至（3）中的至少一个：（1）总种植剂量的40％至70％在n型硅衬底内; （2）将投影范围设定为对应于硅化钛膜厚度的90％〜125％的深度; 和（3）在n型硅衬底内停留的掺杂剂剂量在2.0×10 15 / cm 3至3.5×10 15 / cm 2的范围内。

2. 发明授权

US06648975B2 Method and apparatus for fabricating quantum dot functional structure, quantum dot functional structure, and optically functioning device 有权
标题翻译：用于制造量子点功能结构，量子点功能结构和光学功能器件的方法和装置
公开(公告)号：US06648975B2
公开(公告)日：2003-11-18
申请号：US09784300
申请日：2001-02-16
申请人： Nobuyasu Suzuki , Toshiharu Makino , Yuka Yamada , Takehito Yoshida , Takafumi Seto , Nobuhiro Aya
发明人： Nobuyasu Suzuki , Toshiharu Makino , Yuka Yamada , Takehito Yoshida , Takafumi Seto , Nobuhiro Aya
IPC分类号： C23C1400
CPC分类号： B82Y30/00 , B22F9/12 , B22F2998/00 , B22F2999/00 , B82Y10/00 , C23C14/06 , C23C14/228 , C23C14/28 , H01L33/0054 , B22F1/0018 , B22F2202/11
摘要： The present invention is to fabricate a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium by efficiently fabricating high-purity ultra-fine particles having a single particle diameter and uniform structure and depositing the ultra-fine particles onto a substrate in conjunction with the transparent medium. For these purposes, an apparatus for fabricating a quantum dot functional structure is provided. The apparatus comprises: an ultra-fine particle generating chamber for generating high-purity ultra-fine particles by exciting a semiconductor target with pulsed laser light in a low-pressure rare gas atmosphere, and then by allowing the semiconductor target to be detached or ejected by ablation reaction and condensed and grown in the gas; an ultra-fine particle classifying chamber for classifying the ultra-file particles; a depositing chamber for depositing the high-purity semiconductor ultra-fine particles and the transparent medium by exciting a transparent medium target with excimer laser light at the same time or alternately when the high-purity semiconductor ultra-fine particles are collected onto the substrate, and by collecting the substance generated through ablation reaction onto the substrate; and a carrier gas exhaust system.
摘要翻译：本发明通过有效地制造具有单一粒径和均匀结构的高纯度超细颗粒，并将超细颗粒沉积到基底上，制造均匀分布在透明介质中的超细颗粒的量子点功能结构与透明介质一起使用。为了这些目的，提供了一种用于制造量子点功能结构的装置。该装置包括：超细颗粒发生室，用于通过在低压稀有气体气氛中用脉冲激光激发半导体靶，然后通过使半导体靶被分离或喷射而产生高纯度超细颗粒通过消融反应并在气体中冷凝和生长; 用于对超微粒子进行分类的超细粒子分级室; 用于通过同时激发具有准分子激光的透明介质靶或者当高纯度半导体超细颗粒被收集到基板上时交替沉积高纯度半导体超细颗粒和透明介质的沉积室，并通过将通过消融反应产生的物质收集到基底上; 和载气排气系统。

3. 发明授权

US07384666B2 Method and apparatus for fabricating quantum dot functional structure, quantum dot functional structure, and optically functioning device 有权
标题翻译：用于制造量子点功能结构，量子点功能结构和光学功能器件的方法和装置
公开(公告)号：US07384666B2
公开(公告)日：2008-06-10
申请号：US10657248
申请日：2003-09-09
申请人： Nobuyasu Suzuki , Toshiharu Makino , Yuka Yamada , Takehito Yoshida , Takafumi Seto , Nobuhiro Aya
发明人： Nobuyasu Suzuki , Toshiharu Makino , Yuka Yamada , Takehito Yoshida , Takafumi Seto , Nobuhiro Aya
IPC分类号： B05D5/06
CPC分类号： B82Y30/00 , B22F9/12 , B22F2998/00 , B22F2999/00 , B82Y10/00 , C23C14/06 , C23C14/228 , C23C14/28 , H01L33/0054 , B22F1/0018 , B22F2202/11
摘要： Fabrication of a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium includes depositing such particles having a single particle diameter and uniform structure onto a substrate with the transparent medium. An apparatus for fabricating a quantum dot functional structure comprises: a generating chamber for generating high-purity ultra-fine particles by exciting a semiconductor target with pulsed laser light in low-pressure rare gas, and then allowing the semiconductor target to be detached or ejected by ablation and condensed and grown in the gas; a particle classifying chamber for classifying the ultra-fine particles; a depositing chamber for depositing the high-purity semiconductor ultra-fine particles and the transparent medium by exciting a transparent medium target with excimer laser light simultaneously or alternately when the particles are collected onto the substrate, and by collecting the substance generated through ablation onto the substrate; and a carrier gas exhaust system.
摘要翻译：具有均匀分布在透明介质中的超细颗粒的量子点功能结构的制造包括使用透明介质将具有单一粒径和均匀结构的这种颗粒沉积在基板上。一种用于制造量子点功能结构的装置，其特征在于包括：通过在低压稀有气体中激发具有脉冲激光的半导体靶产生高纯度超细颗粒的发生室，然后允许半导体靶被分离或排出通过消融冷凝并在气体中生长; 用于分级超细颗粒的颗粒分级室; 用于通过同时或交替地将颗粒收集到基板上同时或交替地激发具有准分子激光的透明介质靶的沉积高纯度半导体超细颗粒和透明介质的沉积室，并且通过将通过烧蚀产生的物质收集到基质; 和载气排气系统。

4. 发明授权

US07099261B2 Light-emitting device and optical integrated device 失效
公开(公告)号：US07099261B2
公开(公告)日：2006-08-29
申请号：US10754504
申请日：2004-01-12
申请人： Takehito Yoshida , Yuka Yamada , Nobuyasu Suzuki , Toshiharu Makino
发明人： Takehito Yoshida , Yuka Yamada , Nobuyasu Suzuki , Toshiharu Makino
IPC分类号： G11B7/00
CPC分类号： H05B33/22 , G11B7/127 , H01L33/18 , H01S3/0637 , H01S3/169 , H01S5/183 , H01S5/18388 , H01S5/3031
摘要： In fabricating a monochromic and highly coherent light source, no single crystalline bulk semiconductor is used, but two different kinds of transparent substances are alternately stacked over each other to constitute a periodic structure in ½ of the intended wavelength. At least one of the two kinds of transparent substances is controllable in electric conductivity, and the structure is such that inside a medium consisting of this kind of transparent substance light-emitting semiconductor particulates are embedded. Accordingly, a light-emitting device has this structure, which makes possible control of the center wavelength of light emission, the width of wavelength distribution and coherence by adjusting the geometrical parameters of the device without having to alter the kind of material use.

5. 发明授权

US5925891A Field-emission electron source 失效
标题翻译：场发射电子源
公开(公告)号：US5925891A
公开(公告)日：1999-07-20
申请号：US833191
申请日：1997-04-14
申请人： Keisuke Koga , Yoshikazu Hori , Takehito Yoshida , Yuka Yamada
发明人： Keisuke Koga , Yoshikazu Hori , Takehito Yoshida , Yuka Yamada
IPC分类号： H01J9/02 , H01L29/06 , H01J1/16 , H01J19/10
CPC分类号： H01J9/025 , H01J2201/30426
摘要： A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.
摘要翻译：引出电极形成在硅衬底上，介于上和下氧化硅膜之间，每个氧化硅膜具有对应于其中将形成阴极的区域的圆形开口。在上下氧化硅膜和引出电极的各个开口中形成塔状阴极。每个阴极具有通过晶体各向异性蚀刻和硅的热氧化工艺形成的具有2nm或更小半径的尖锐尖端部分。暴露在上，下氧化硅膜和阴极的开口中的硅衬底的区域的表面涂覆有由具有低功函数的材料制成的薄表面涂膜。

6. 发明申请

US20060187992A1 Light-emitting device and optical integrated device 失效
公开(公告)号：US20060187992A1
公开(公告)日：2006-08-24
申请号：US11408062
申请日：2006-04-21
申请人： Takehito Yoshida , Yuka Yamada , Nobuyasu Suzuki , Toshiharu Makino
发明人： Takehito Yoshida , Yuka Yamada , Nobuyasu Suzuki , Toshiharu Makino
IPC分类号： H01S5/00
CPC分类号： H05B33/22 , G11B7/127 , H01L33/18 , H01S3/0637 , H01S3/169 , H01S5/183 , H01S5/18388 , H01S5/3031
摘要： In fabricating a monochromic and highly coherent light source, no single crystalline bulk semiconductor is used, but two different kinds of transparent substances are alternately stacked over each other to constitute a periodic structure in ½ of the intended wavelength. At least one of the two kinds of transparent substances is controllable in electric conductivity, and the structure is such that inside a medium consisting of this kind of transparent substance light-emitting semiconductor particulates are embedded. Accordingly, a light-emitting device has this structure, which makes possible control of the center wavelength of light emission, the width of wavelength distribution and coherence by adjusting the geometrical parameters of the device without having to alter the kind of material use.

7. 发明授权

US06838743B2 Optoelectronic material, device using the same and method for manufacturing optoelectronic material 有权
标题翻译：光电子材料，使用相同的器件和制造光电子材料的方法
公开(公告)号：US06838743B2
公开(公告)日：2005-01-04
申请号：US10372257
申请日：2003-02-25
申请人： Yuka Yamada , Takehito Yoshida , Shigeru Takeyama , Yuji Matsuda , Katsuhiko Mutoh
发明人： Yuka Yamada , Takehito Yoshida , Shigeru Takeyama , Yuji Matsuda , Katsuhiko Mutoh
IPC分类号： H01L21/203 , B01D53/78 , H01L31/18 , H01L33/00 , H01L33/18 , H01L33/26 , H01L31/06 , H01L31/0352
CPC分类号： H01L33/26 , H01L31/1804 , H01L33/0054 , H01L33/18 , Y02E10/547 , Y02P70/521 , Y10T428/25 , Y10T428/258
摘要： This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same. This invention also relates to a method of manufacturing an optoelectronic material by irradiating a laser beam onto a first target of a semiconductor material, placed in a reaction chamber in low pressure rare gas ambient, and a second target of a medium material with a controllable electric characteristic, placed in the reaction chamber, condensing/growing a semiconductor material ablated from the first target to be collected as ultrafine particles having a mean particle size of 100 nm or smaller on a substrate placed in the reaction chamber, and condensing/growing a medium material ablated from the second target to be collected on the substrate placed in the reaction chamber, thus forming an ultrafine-particles dispersed layer having semiconductor ultrafine particles dispersed in the medium on the substrate.
摘要翻译：本发明涉及包含具有可控电特性的均匀介质的光电子材料; 和分散在介质中并且具有100nm以下的平均粒径的半导体超细颗粒，以及使用其的涂布装置。本发明还涉及一种通过将激光束照射到放置在低压稀有气体环境中的反应室中的半导体材料的第一靶上，以及具有可控电的介质材料的第二靶材来制造光电子材料的方法特性，放置在反应室中，冷凝/生长从放置在反应室中的基板上平均粒度为100nm以下的超微粒子作为被收集的第一靶材烧蚀的半导体材料，并冷凝/生长介质从放置在反应室内的基板上收集的第二靶材烧蚀掉的材料，由此形成分散在基板上的介质中的具有半导体超微粒子的超微粒子分散层。

8. 发明授权

US06809314B2 Fine particle classification apparatus and method for classifying aerosol particles in a sheath gas 有权
标题翻译：用于对护套气体中的气溶胶颗粒进行分类的细颗粒分级装置和方法
公开(公告)号：US06809314B2
公开(公告)日：2004-10-26
申请号：US09925414
申请日：2001-08-10
申请人： Takehito Yoshida , Toshiharu Makino , Nobuyasu Suzuki , Yuka Yamada
发明人： Takehito Yoshida , Toshiharu Makino , Nobuyasu Suzuki , Yuka Yamada
IPC分类号： H01J4904
CPC分类号： G01N15/0266 , Y10T428/25
摘要： A fine-particle classification apparatus includes an aerosol generation section which generates an aerosol containing fine particles in a medium background gas, a fine-particle classification section which classifies the fine particles contained in the aerosol in a sheath gas, and an introduction section, between the aerosol generation section and the fine-particle classification section, which introduces the aerosol generated in the aerosol generation section into the fine-particle classification section. The introduction section uses a carrier gas with an adequately high velocity to introduce the aerosol generated in the aerosol generation section to the classification section using a pressure difference.
摘要翻译：细颗粒分级装置包括：气溶胶生成部，其生成含有中等背景气体中的微粒子的气溶胶，将包含在气溶胶中的细颗粒分类为鞘气体的细粒分级部和导入部，气溶胶生成部和细粒分级部，其将在气溶胶生成部中产生的气溶胶引入微粒分类部。引入部分使用具有足够高速度的载气，使用压差将气溶胶发生部分中产生的气溶胶引入分级部。

9. 发明授权

US5897790A Field-emission electron source and method of manufacturing the same 失效
标题翻译：场发射电子源及其制造方法
公开(公告)号：US5897790A
公开(公告)日：1999-04-27
申请号：US995839
申请日：1997-12-22
申请人： Keisuke Koga , Yoshikazu Hori , Takehito Yoshida , Yuka Yamada
发明人： Keisuke Koga , Yoshikazu Hori , Takehito Yoshida , Yuka Yamada
IPC分类号： H01J9/02 , B44C1/22
CPC分类号： H01J9/025 , H01J2201/30426
摘要： A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.
摘要翻译：引出电极形成在硅衬底上，介于上和下氧化硅膜之间，每个氧化硅膜具有对应于其中将形成阴极的区域的圆形开口。在上下氧化硅膜和引出电极的各个开口中形成塔状阴极。每个阴极具有通过晶体各向异性蚀刻和硅的热氧化工艺形成的具有2nm或更小半径的尖锐尖端部分。暴露在上，下氧化硅膜和阴极的开口中的硅衬底的区域的表面涂覆有由具有低功函数的材料制成的薄表面涂膜。

10. 发明授权

US07480229B2 Light-emitting device and optical integrated device 失效
标题翻译：发光装置和光集成装置
公开(公告)号：US07480229B2
公开(公告)日：2009-01-20
申请号：US11408062
申请日：2006-04-21
申请人： Takehito Yoshida , Yuka Yamada , Nobuyasu Suzuki , Toshiharu Makino
发明人： Takehito Yoshida , Yuka Yamada , Nobuyasu Suzuki , Toshiharu Makino
IPC分类号： G11B7/00
CPC分类号： H05B33/22 , G11B7/127 , H01L33/18 , H01S3/0637 , H01S3/169 , H01S5/183 , H01S5/18388 , H01S5/3031
摘要： In fabricating a monochromic and highly coherent light source, no single crystalline bulk semiconductor is used, but two different kinds of transparent substances are alternately stacked over each other to constitute a periodic structure in ½ of the intended wavelength. At least one of the two kinds of transparent substances is controllable in electric conductivity, and the structure is such that inside a medium consisting of this kind of transparent substance light-emitting semiconductor particulates are embedded. Accordingly, a light-emitting device has this structure, which makes possible control of the center wavelength of light emission, the width of wavelength distribution and coherence by adjusting the geometrical parameters of the device without having to alter the kind of material use.
摘要翻译：在制造单色和高度相干光源时，不使用单晶体半导体，但是两种不同种类的透明物质彼此交替堆叠以构成所需波长的1/2的周期性结构。两种透明物质中的至少一种在导电性方面是可控的，并且其结构是这样的，即在由这种透明物质发光的半导体微粒组成的介质内嵌入。因此，发光装置具有这样的结构，其可以通过调节装置的几何参数来控制发光的中心波长，波长分布的宽度和相干性，而不必改变材料的种类。

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