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1. 发明授权

US07501371B2 Dielectric ceramic, method for manufacturing dielectric ceramic, and monolithic ceramic capacitor 有权
标题翻译：介电陶瓷，制造介质陶瓷的方法和单片陶瓷电容器
公开(公告)号：US07501371B2
公开(公告)日：2009-03-10
申请号：US11655132
申请日：2007-01-19
申请人： Takehisa Sasabayashi , Masayuki Ishihara , Tomoyuki Nakamura , Harunobu Sano
发明人： Takehisa Sasabayashi , Masayuki Ishihara , Tomoyuki Nakamura , Harunobu Sano
IPC分类号： C04B35/468 , H01G4/06
CPC分类号： C04B35/62675 , C01G23/006 , C01P2002/34 , C01P2006/40 , C04B35/4682 , C04B35/6261 , C04B35/62815 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3236 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3272 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3289 , C04B2235/3291 , C04B2235/3409 , C04B2235/3418 , C04B2235/656 , C04B2235/6582 , C04B2235/6584 , C04B2235/6588 , C04B2235/79 , C04B2235/85 , H01G4/1227 , H01G4/30
摘要： Dielectric ceramic having a high dielectric constant of 5,500 or more and exhibiting good dielectric constant temperature characteristic, and a small, high-capacitance monolithic ceramic capacitor having an electrostatic capacitance temperature characteristic satisfying the X5R characteristic are provided. The dielectric ceramic includes a BaTiO3 based or (Ba,Ca)TiO3 based primary component, a rare-earth element and Cu, and has a structure composed of crystal grains and grain boundaries between the crystal grains. The ratio of the average concentration of the rare-earth element in the grain boundaries to the average concentration of the rare-earth element in the inside of the crystal grains is less than 2, and in a cross section of the dielectric ceramic, the rare-earth element is present in 90% or more of the region of first crystal grains, the number of which is 55% to 85% of the crystal grains, and the rare-earth element is present in less than 10% of the region of second crystal grains, the number of which is 15% to 45% of the crystal grains.
摘要翻译：具有高介电常数为5,500以上且具有良好的介电常数温度特性的介质陶瓷，以及具有满足X5R特性的静电电容温度特性的小型高电容性叠层陶瓷电容器。电介质陶瓷包括基于BaTiO 3或（Ba，Ca）TiO 3的初级组分，稀土元素和Cu，并且具有由晶粒和晶粒之间的晶界构成的结构。晶粒内稀土类元素的平均浓度与稀土元素在晶粒内部的平均浓度的比例小于2，在电介质陶瓷的截面中，稀有元素在第一晶粒区域的90％以上存在基体元素，其数量为晶粒的55％〜85％，稀土元素的含量少于10％以下第二晶粒，其数量为晶粒的15％至45％。

2. 发明申请

US20070135295A1 Dielectric ceramic, method for manufacturing dielectric ceramic, and monolithic ceramic capacitor 有权
标题翻译：介电陶瓷，制造介质陶瓷的方法和单片陶瓷电容器
公开(公告)号：US20070135295A1
公开(公告)日：2007-06-14
申请号：US11655132
申请日：2007-01-19
申请人： Takehisa Sasabayashi , Masayuki Ishihara , Tomoyuki Nakamura , Harunobu Sano
发明人： Takehisa Sasabayashi , Masayuki Ishihara , Tomoyuki Nakamura , Harunobu Sano
IPC分类号： C04B35/468
CPC分类号： C04B35/62675 , C01G23/006 , C01P2002/34 , C01P2006/40 , C04B35/4682 , C04B35/6261 , C04B35/62815 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3236 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3272 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3289 , C04B2235/3291 , C04B2235/3409 , C04B2235/3418 , C04B2235/656 , C04B2235/6582 , C04B2235/6584 , C04B2235/6588 , C04B2235/79 , C04B2235/85 , H01G4/1227 , H01G4/30
摘要： Dielectric ceramic having a high dielectric constant of 5,500 or more and exhibiting good dielectric constant temperature characteristic, and a small, high-capacitance monolithic ceramic capacitor having an electrostatic capacitance temperature characteristic satisfying the X5R characteristic are provided. The dielectric ceramic includes a BaTiO3 based or (Ba,Ca)TiO3 based primary component, a rare-earth element and Cu, and has a structure composed of crystal grains and grain boundaries between the crystal grains. The ratio of the average concentration of the rare-earth element in the grain boundaries to the average concentration of the rare-earth element in the inside of the crystal grains is less than 2, and in a cross section of the dielectric ceramic, the rare-earth element is present in 90% or more of the region of first crystal grains, the number of which is 55% to 85% of the crystal grains, and the rare-earth element is present in less than 10% of the region of second crystal grains, the number of which is 15% to 45% of the crystal grains.
摘要翻译：具有高介电常数为5,500以上且具有良好的介电常数温度特性的介质陶瓷，以及具有满足X5R特性的静电电容温度特性的小型高电容性叠层陶瓷电容器。电介质陶瓷包括基于BaTiO 3 3或（Ba，Ca）TiO 3 3基的初级组分，稀土元素和Cu，并且具有由晶粒组成的结构和晶粒之间的晶界。晶粒内稀土类元素的平均浓度与稀土元素在晶粒内部的平均浓度的比例小于2，在电介质陶瓷的截面中，稀有元素在第一晶粒区域的90％以上存在基体元素，其数量为晶粒的55％〜85％，稀土元素的含量少于10％以下第二晶粒，其数量为晶粒的15％至45％。

3. 发明申请

US20070142210A1 Dielectric ceramic and monolithic ceramic capacitor 有权
公开(公告)号：US20070142210A1
公开(公告)日：2007-06-21
申请号：US11657449
申请日：2007-01-25
申请人： Kazuo Muto , Tomoyuki Nakamura , Akira Kato , Harunobu Sano , Takehisa Sasabayashi , Takashi Hiramatsu
发明人： Kazuo Muto , Tomoyuki Nakamura , Akira Kato , Harunobu Sano , Takehisa Sasabayashi , Takashi Hiramatsu
IPC分类号： C04B35/468
CPC分类号： C04B35/49 , B32B2311/12 , B32B2311/22 , C04B35/4682 , C04B35/62665 , C04B35/6303 , C04B2235/3201 , C04B2235/3203 , C04B2235/3205 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3289 , C04B2235/3291 , C04B2235/3409 , C04B2235/3418 , C04B2235/6025 , C04B2235/656 , C04B2235/6582 , C04B2235/6584 , C04B2235/6588 , C04B2235/768 , C04B2235/785 , C04B2235/96 , C04B2237/346 , C04B2237/348 , C04B2237/405 , C04B2237/407 , H01B3/12 , H01G4/1227 , H01G4/30
摘要： The dielectric ceramic has a composition represented by general formula 100(Ba1-x-ySrxCay)m(Ti1-zZrz)O3+aBaO+bR2O3+cMgO+dMnO+eCuO+fV2O5+gXuOv (where R is a rare-earth element such as La, Ce or Pr; and XuOv is an oxide group including at least Si); and 0≦x≦0.05, 0≦y≦0.08 (preferably 0.02≦y≦0.08), 0≦z≦0.05, 0.990≦m, 100.2≦(100 m+a)≦102, 0.05≦b≦0.5, 0.05≦c≦2, 0.05≦d≦1.3, 0.1≦e≦1.0, 0.02≦f≦0.15, and 0.2≦g≦2. With this composition, a monolithic ceramic capacitor retaining good dielectric characteristics and temperature characteristics even if a high field strength voltage is applied by further thinning the dielectric layers thereof and having excellent reliability achieving good isolating property, dielectric strength, and high-temperature load life is obtained.

4. 发明授权

US07273825B2 Dielectric ceramic and monolithic ceramic capacitor 有权
标题翻译：介质陶瓷和单片陶瓷电容器
公开(公告)号：US07273825B2
公开(公告)日：2007-09-25
申请号：US11657449
申请日：2007-01-25
申请人： Kazuo Muto , Tomoyuki Nakamura , Akira Kato , Harunobu Sano , Takehisa Sasabayashi , Takashi Hiramatsu
发明人： Kazuo Muto , Tomoyuki Nakamura , Akira Kato , Harunobu Sano , Takehisa Sasabayashi , Takashi Hiramatsu
IPC分类号： C04B35/468
CPC分类号： C04B35/49 , B32B2311/12 , B32B2311/22 , C04B35/4682 , C04B35/62665 , C04B35/6303 , C04B2235/3201 , C04B2235/3203 , C04B2235/3205 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3289 , C04B2235/3291 , C04B2235/3409 , C04B2235/3418 , C04B2235/6025 , C04B2235/656 , C04B2235/6582 , C04B2235/6584 , C04B2235/6588 , C04B2235/768 , C04B2235/785 , C04B2235/96 , C04B2237/346 , C04B2237/348 , C04B2237/405 , C04B2237/407 , H01B3/12 , H01G4/1227 , H01G4/30
摘要： The dielectric ceramic has a composition represented by general formula 100(Ba1-x-ySrxCay)m(Ti1-zZrz)O3+aBaO+bR2O3+cMgO+dMnO+eCuO+fV2O5+gXuOv (where R is a rare-earth element such as La, Ce or Pr; and XuOv is an oxide group including at least Si); and 0≦x≦0.05, 0≦y≦0.08 (preferably 0.02≦y≦0.08), 0≦z≦0.05, 0.990≦m, 100.2≦(100 m+a)≦102, 0.05≦b≦0.5, 0.05≦c≦2, 0.05≦d≦1.3, 0.1≦e≦1.0, 0.02≦f≦0.15, and 0.2≦g≦2. With this composition, a monolithic ceramic capacitor retaining good dielectric characteristics and temperature characteristics even if a high field strength voltage is applied by further thinning the dielectric layers thereof and having excellent reliability achieving good isolating property, dielectric strength, and high-temperature load life is obtained.
摘要翻译：电介质陶瓷具有由通式100（Ba 1-xy），（C 1 -C 10）m）表示的组成，（Ti 1-z z z z）O 3 + a B a O + b R 2 O 3 3 / 其中R是（C 1 -C 6）烷基，其中R 1是C 1 -C 6烷基，诸如La，Ce或Pr的稀土元素; X 1 O 2 O 3是至少包括Si）的氧化物基团; 并且0 <= x <= 0.05,0 <= y <= 0.08（优选0.02 <= y <= 0.08），0 <= z <= 0.05,0.990 <= m，100.2 <=（100m + a） = 102，0.05 <= b <= 0.5,0.05 <= c <= 2,0.05 <= d <= 1.3,0.1 <= e <= 1.0,0.02 <= f <= 0.15和0.2 <= g < 2。通过这种组成，即使通过进一步减薄其介电层并且具有优异的可靠性获得良好的隔离性，介电强度和高温负载寿命，即使施加高的场强电压，也能保持良好的介电特性和温度特性的单片陶瓷电容器。获得。

5. 发明授权

US06310761B1 Dielectric ceramic composition and monolithic ceramic capacitor 有权
标题翻译：介电陶瓷组合物和单片陶瓷电容器
公开(公告)号：US06310761B1
公开(公告)日：2001-10-30
申请号：US09655071
申请日：2000-09-05
申请人： Kenji Hori , Kotaro Hata , Toshihiro Ikamatsu , Tomoyuki Nakamura , Harunobu Sano
发明人： Kenji Hori , Kotaro Hata , Toshihiro Ikamatsu , Tomoyuki Nakamura , Harunobu Sano
IPC分类号： H01G406
CPC分类号： C04B35/4682 , C01G23/002 , C01P2004/61 , C01P2006/40 , H01G4/1227
摘要： A dielectric ceramic composition is composed of barium titanate (BamTiO3), a rare-earth oxide (RO3/2), where the rare-earth element is at least one of Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb, calcium oxide and a silicon oxide. When the dielectric ceramic composition is represented by the formula 100BamTiO3+aRO3/2+bCaO+cSiO2, where coefficients 100, a, b, and c indicate moles, the relationships 0.990≦m≦1.030, 0.5≦a≦30, 0.5≦b≦30, and 0.5≦c≦30 are satisfied. A monolithic ceramic capacitor includes a plurality of dielectric ceramic layers, internal electrodes formed between the dielectric ceramic layers and external electrodes electrically connected to the internal electrodes. The dielectric ceramic layers are composed of the dielectric ceramic composition described above, and the internal electrodes are composed of a base metal as a principal constituent.
摘要翻译：介电陶瓷组合物由稀土元素为Y，Sm，Eu，Gd，Tb，Dy，Ho，Er中的至少一种的钛酸钡（BamTiO 3），稀土类氧化物（RO3 / 2），Tm和Yb，氧化钙和氧化硅。当电介质陶瓷组合物由式100BamTiO3 + aRO3 / 2 + bCaO + cSiO2表示时，其中系数100，a，b和c表示摩尔数，关系0.990 <= m <= 1.030,0.5 <= a <= 30 ，0.5 <= b <= 30，满足0.5 <= c <30。单片陶瓷电容器包括多个电介质陶瓷层，形成在电介质陶瓷层和电连接到内部电极的外部电极之间的内部电极。电介质陶瓷层由上述介电陶瓷组合物构成，内部电极以贱金属为主要成分。

6. 发明授权

US06380116B1 Dielectric ceramic composition and monolithic ceramic capacitor 有权
标题翻译：介电陶瓷组合物和单片陶瓷电容器
公开(公告)号：US06380116B1
公开(公告)日：2002-04-30
申请号：US09626477
申请日：2000-07-26
申请人： Toshihiro Okamatsu , Tomoyuki Nakamura , Kenji Hori , Kotaro Hata , Harunobu Sano
发明人： Toshihiro Okamatsu , Tomoyuki Nakamura , Kenji Hori , Kotaro Hata , Harunobu Sano
IPC分类号： C04B35468
CPC分类号： C04B35/4682 , H01G4/1227
摘要： A dielectric ceramic composition comprises a compound oxide comprising barium titanate BamTiO3 as a major component and RO3/2, CaO, MgO, and SiO2, as accessory components, wherein R is at least one element selected from the group consisting of Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb, wherein the compound oxide satisfies the following relationship: 100BamTiO3+aRO3/2+bCaO+cMgO+dSiO2, wherein, on a molar basis, 0.990≦m≦1.030, 0.5≦a≦6.0, 0.10≦b≦5.00, 0.010≦c
摘要翻译：电介质陶瓷组合物包括作为主要成分的复合氧化物，其包含作为主要成分的钛酸钡BamTiO 3和作为附加成分的RO3 / 2，CaO，MgO和SiO2，其中R是选自Y，Sm，Eu中的至少一种元素，Gd，Tb，Dy，Ho，Er，Tm和Yb，其中复合氧化物满足以下关系：100BamTiO3 + aRO3 / 2 + bCaO + cMgO + dSiO2，其中，以摩尔计为0.990 <= m <= 1.030 ，0.5 <= a <= 6.0,0.10 <= b <= 5.00,0.010 <= c <1.000和0.05 <= d <2.00。电介质陶瓷组合物满足由日本工业标准（JIS）定义的B特性和由EIA标准定义的关于静电电容对温度的依赖性的X7R特性，并且具有绝缘电阻和静电电容的大CR产物。包含由该介电陶瓷组合物构成的薄电介质层的叠层陶瓷电容器是高度可靠的。

7. 发明授权

US06346497B1 Dielectric ceramic composition and monolithic ceramic capacitor 有权
标题翻译：介电陶瓷组合物和单片陶瓷电容器
公开(公告)号：US06346497B1
公开(公告)日：2002-02-12
申请号：US09388173
申请日：1999-09-01
申请人： Tomoyuki Nakamura , Shinobu Mizuno , Harunobu Sano
发明人： Tomoyuki Nakamura , Shinobu Mizuno , Harunobu Sano
IPC分类号： C04B35468
CPC分类号： C04B35/4682 , H01G4/1227
摘要： A dielectric ceramic composition exhibiting a firing temperature of 1300° C. or less, a dielectric constant of 200 or more, a low loss under a high-frequency-high-voltage alternating current, high insulation resistance at high electric field strength, characteristics satisfying the B and X7R characteristics, and excellent high-temperature load properties. It contains a barium titanate solid solution and additive components, and is represented by the formula, ABO3+aR and bM, wherein ABO3 represents the barium titanate solid solution having a perovskite structure; R represents an oxide of at least one metal, M represents an oxide of at least one other metal, a and b respectively represent the molar ratios of single metal oxides and a sintering additive, wherein 0.950≦A/B (molar ratio)≦1.050, 0.12
摘要翻译：显示烧成温度为1300℃以下，介电常数为200以上的介电陶瓷组合物，高频高交流电时的低损耗，高电场强度下的高绝缘电阻，满足 B和X7R特性，以及优异的高温负载特性。它含有钛酸钡固溶体和添加剂组分，由式ABO 3 + aR和bM表示，其中ABO 3表示具有钙钛矿结构的钛酸钡固溶体; R表示至少一种金属的氧化物，M表示至少一种其它金属的氧化物，a和b分别表示单一金属氧化物和烧结添加剂的摩尔比，其中0.950≤A/ B（摩尔比） = 1.050,0.12

8. 发明授权

US06939822B2 Dielectric ceramic, methods for making and evaluating the same, and monolithic ceramic electronic component 有权
标题翻译：介电陶瓷，制造和评价陶瓷电子元件的方法
公开(公告)号：US06939822B2
公开(公告)日：2005-09-06
申请号：US10352038
申请日：2003-01-28
申请人： Hiroyasu Konaka , Tomoyuki Nakamura , Toshihiro Okamatsu , Harunobu Sano
发明人： Hiroyasu Konaka , Tomoyuki Nakamura , Toshihiro Okamatsu , Harunobu Sano
IPC分类号： C04B35/46 , C04B35/468 , C04B35/48 , H01G4/12 , C04B35/49
CPC分类号： C04B35/48 , B32B18/00 , B32B2311/08 , C04B35/4682 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3236 , C04B2235/3239 , C04B2235/3241 , C04B2235/3262 , C04B2235/3267 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3409 , C04B2235/3418 , C04B2235/36 , C04B2235/6582 , C04B2235/6584 , C04B2235/785 , C04B2235/786 , C04B2235/85 , C04B2237/346 , C04B2237/408 , C04B2237/704 , H01G4/1227 , H01G4/1245
摘要： A dielectric ceramic has a ceramic structure of crystal grains and grain boundaries between the crystal grains. The crystal grains are of a main component represented by the formula ABO3 and an additive containing a rare earth element wherein A is at least one of barium, calcium, and strontium, barium being an essential element, and B is at least one of titanium, zirconium, and hafnium, titanium being an essential element. The average rare earth element concentration in the interior of the crystal grains is about 50% or less the average rare earth element concentration at the grain boundaries. Furthermore, about 20% to 70% of the crystal grains have a rare earth element concentration in the center of the crystal grain of at least about 1/50 the maximum rare earth element concentration in a region extending inward from the surface by a distance corresponding to about 5% of the diameter of the crystal grain.
摘要翻译：电介质陶瓷具有晶粒的陶瓷结构和晶粒之间的晶界。晶粒是由式ABO 3 3表示的主要成分和含有稀土元素的添加剂，其中A是钡，钙和锶中的至少一种，钡是必需元素，以及 B是钛，锆和铪中的至少一种，钛是必需元素。晶粒内部的平均稀土元素浓度约为晶界平均稀土元素浓度的50％以下。此外，约20％至70％的晶粒在晶粒的中心具有至少约1/50的稀土元素浓度，该稀土元素浓度在从表面向内延伸一定距离的区域中的最大稀土元素浓度至约5％的晶粒直径。

9. 发明授权

US06900977B2 Dielectric ceramic, manufacturing method thereof, and multilayer ceramic capacitor 有权
标题翻译：介电陶瓷及其制造方法和多层陶瓷电容器
公开(公告)号：US06900977B2
公开(公告)日：2005-05-31
申请号：US10780720
申请日：2004-02-19
申请人： Tomoyuki Nakamura , Akira Kato , Kazuo Muto , Harunobu Sano
发明人： Tomoyuki Nakamura , Akira Kato , Kazuo Muto , Harunobu Sano
IPC分类号： C04B35/46 , C04B35/00 , H01B3/00 , H01B3/12 , H01G4/06 , H01G4/12 , H01G4/30 , H02H3/00
CPC分类号： H01G4/30 , H01G4/1227 , Y10T29/43
摘要： A dielectric ceramic formed by firing in a reducing atmosphere is provided. A multilayer ceramic capacitor formed by using the aforementioned dielectric ceramic has superior reliability even when the thicknesses of dielectric ceramic layers formed therefrom are reduced. The dielectric ceramic has crystal grains; and crystal boundaries and triple points, which are located between the crystal grains. The crystal grains contain perovskite compound grains composed of a perovskite compound represented by ABO3 (where A is Ba and Ca, or Ba, Ca and Sr; B is Ti, or Ti and a part thereof which is replaced with at least one of Zr and Hf) and crystal oxide grains composed of a crystal oxide containing at least Ba, Ti and Si, and about 80% or more of the number of the triple points each have a cross-sectional area of about 8 nm2 or less.
摘要翻译：提供通过在还原气氛中烧制形成的介电陶瓷。通过使用上述介电陶瓷形成的多层陶瓷电容器即使当由其形成的介电陶瓷层的厚度减小时也具有优异的可靠性。电介质陶瓷具有晶粒; 晶界和三点位于晶粒之间。晶粒含有由ABO 3（其中A为Ba和Ca或Ba，Ca和Sr; B为Ti或Ti的钙钛矿化合物或其一部分为ABO 3 由Zr和Hf中的至少一种替代）和由至少含有Ba，Ti和Si的结晶氧化物组成的晶体氧化物晶粒，并且约80％或更多的三重点数目的截面面积为约 8nm 2以下。

10. 发明授权

US06556423B2 Dielectric ceramic, methods for making and evaluating the same, and monolithic ceramic electronic component 有权
公开(公告)号：US06556423B2
公开(公告)日：2003-04-29
申请号：US10092258
申请日：2002-03-07
申请人： Hiroyasu Konaka , Tomoyuki Nakamura , Toshihiro Okamatsu , Harunobu Sano
发明人： Hiroyasu Konaka , Tomoyuki Nakamura , Toshihiro Okamatsu , Harunobu Sano
IPC分类号： H01G406
CPC分类号： C04B35/48 , B32B18/00 , B32B2311/08 , C04B35/4682 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3236 , C04B2235/3239 , C04B2235/3241 , C04B2235/3262 , C04B2235/3267 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3409 , C04B2235/3418 , C04B2235/36 , C04B2235/6582 , C04B2235/6584 , C04B2235/785 , C04B2235/786 , C04B2235/85 , C04B2237/346 , C04B2237/408 , C04B2237/704 , H01G4/1227 , H01G4/1245
摘要： A dielectric ceramic has a ceramic structure of crystal grains and grain boundaries between the crystal grains. The crystal grains are of a main component represented by the formula ABO3 and an additive containing a rare earth element wherein A is at least one of barium, calcium, and strontium, barium being an essential element, and B is at least one of titanium, zirconium, and hafnium, titanium being an essential element. The average rare earth element concentration in the interior of the crystal grains is about 50% or less the average rare earth element concentration at the grain boundaries. Furthermore, about 20% to 70% of the crystal grains have a rare earth element concentration in the center of the crystal grain of at least about {fraction (1/50)} the maximum rare earth element concentration in a region extending inward from the surface by a distance corresponding to about 5% of the diameter of the crystal grain.

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